JP2009295952A5 - - Google Patents

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Publication number
JP2009295952A5
JP2009295952A5 JP2008236026A JP2008236026A JP2009295952A5 JP 2009295952 A5 JP2009295952 A5 JP 2009295952A5 JP 2008236026 A JP2008236026 A JP 2008236026A JP 2008236026 A JP2008236026 A JP 2008236026A JP 2009295952 A5 JP2009295952 A5 JP 2009295952A5
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JP
Japan
Prior art keywords
groove
manufacturing
laser device
semiconductor laser
nitride semiconductor
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Application number
JP2008236026A
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English (en)
Japanese (ja)
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JP5223552B2 (ja
JP2009295952A (ja
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Priority to JP2008236026A priority Critical patent/JP5223552B2/ja
Priority claimed from JP2008236026A external-priority patent/JP5223552B2/ja
Priority to US12/431,393 priority patent/US8053262B2/en
Publication of JP2009295952A publication Critical patent/JP2009295952A/ja
Publication of JP2009295952A5 publication Critical patent/JP2009295952A5/ja
Application granted granted Critical
Publication of JP5223552B2 publication Critical patent/JP5223552B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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JP2008236026A 2008-05-02 2008-09-16 窒化物半導体レーザ素子の製造方法 Active JP5223552B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008236026A JP5223552B2 (ja) 2008-05-02 2008-09-16 窒化物半導体レーザ素子の製造方法
US12/431,393 US8053262B2 (en) 2008-05-02 2009-04-28 Method for manufacturing nitride semiconductor laser element

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008120446 2008-05-02
JP2008120446 2008-05-02
JP2008236026A JP5223552B2 (ja) 2008-05-02 2008-09-16 窒化物半導体レーザ素子の製造方法

Publications (3)

Publication Number Publication Date
JP2009295952A JP2009295952A (ja) 2009-12-17
JP2009295952A5 true JP2009295952A5 (enExample) 2011-09-22
JP5223552B2 JP5223552B2 (ja) 2013-06-26

Family

ID=41257376

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008236026A Active JP5223552B2 (ja) 2008-05-02 2008-09-16 窒化物半導体レーザ素子の製造方法

Country Status (2)

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US (1) US8053262B2 (enExample)
JP (1) JP5223552B2 (enExample)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100999779B1 (ko) 2010-02-01 2010-12-08 엘지이노텍 주식회사 발광소자, 발광소자의 제조방법 및 발광소자 패키지
KR101125334B1 (ko) * 2010-04-09 2012-03-27 엘지이노텍 주식회사 발광 소자, 발광 소자 제조방법 및 발광 소자 패키지
CN102122686A (zh) * 2011-01-17 2011-07-13 泉州市金太阳电子科技有限公司 发光二极管的制造方法
CN107579428B (zh) 2012-05-08 2020-03-03 镁可微波技术有限公司 具有光束形状修改的激光器
JP6357654B2 (ja) * 2013-04-17 2018-07-18 パナソニックＩｐマネジメント株式会社 化合物半導体装置および樹脂封止型半導体装置
DE102016101942B4 (de) 2016-02-04 2022-07-21 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen einer optoelektronischen Leuchtvorrichtung
CN109565141B (zh) * 2016-07-28 2021-03-05 三菱电机株式会社 平面波导型激光装置
WO2019186743A1 (ja) * 2018-03-28 2019-10-03 三菱電機株式会社 半導体レーザ素子およびその製造方法
JP7468361B2 (ja) * 2018-12-13 2024-04-16 ソニーグループ株式会社 半導体装置及び半導体装置の製造方法
CN111279564B (zh) * 2019-05-28 2023-07-04 厦门三安光电有限公司 一种激光二极管及其制作方法
US20210313760A1 (en) * 2020-04-06 2021-10-07 Asahi Kasei Kabushiki Kaisha Method for manufacturing semiconductor laser diode and semiconductor laser diode
JP2022073701A (ja) * 2020-11-02 2022-05-17 パナソニックホールディングス株式会社 半導体レーザ素子、及び半導体レーザ素子の製造方法
DE102020130017A1 (de) * 2020-11-13 2022-05-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum herstellen einer mehrzahl von halbleiterlasern und halbleiterlaser

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GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
JPS62283686A (ja) * 1986-05-31 1987-12-09 Mitsubishi Electric Corp 半導体レ−ザの製造方法
JPS62286294A (ja) * 1986-06-04 1987-12-12 Oki Electric Ind Co Ltd 半導体レ−ザの製造方法
DE3731312C2 (de) 1987-09-17 1997-02-13 Siemens Ag Verfahren zum Vereinzeln von monolithisch hergestellten Laserdioden
JPH0283990A (ja) * 1988-09-20 1990-03-26 Nec Corp 半導体発光装置の製造方法
JP2869279B2 (ja) * 1992-09-16 1999-03-10 三菱電機株式会社 半導体レーザダイオード及びその製造方法並びに半導体レーザダイオードアレイ
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JP3490229B2 (ja) 1995-12-15 2004-01-26 日亜化学工業株式会社 窒化物半導体レーザ素子の製造方法
JP2000106470A (ja) 1998-09-29 2000-04-11 Sharp Corp 半導体レーザ素子の製造方法及び半導体レーザ素子
JP2000114666A (ja) 1998-10-09 2000-04-21 Sanyo Electric Co Ltd 半導体発光素子およびその製造方法
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US8138002B2 (en) * 2008-08-21 2012-03-20 Sony Corporation Semiconductor light-emitting element, fabrication method thereof, convex part formed on backing, and convex part formation method for backing

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