JP2011057527A - 多結晶シリコン製造システム、多結晶シリコン製造装置および多結晶シリコンの製造方法 - Google Patents
多結晶シリコン製造システム、多結晶シリコン製造装置および多結晶シリコンの製造方法 Download PDFInfo
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Abstract
【解決手段】反応炉10に供給される冷却媒体として標準沸点よりも高い温度の熱水15を用い反応器内壁温度を370℃以下に保ち、且つ、冷媒タンク20に設けられた圧力制御部により、回収される熱水15を減圧してスチームを発生させてその一部をスチームとして外部に取り出して別用途の加熱源として再利用することとした。また、反応炉10の内壁の炉内側に設けられる耐食層11aの材料として、R=[Cr]+[Ni]−1.5[Si]で定義付けられるR値が40%以上となる組成の合金材料を用いることとした。
【選択図】図1
Description
2a、2b 電極
3 ガスノズル
4 排気口
5 シリコン芯線
6 多結晶シリコン
10 反応炉(反応容器)
11 内壁
11a 耐食層
11b 熱伝導層
12 外壁
13 冷却媒体流路
15 熱水
20 冷媒タンク
21 熱水供給ポンプ
22 圧力指示調節計
23 調節弁
24a、24b 冷媒循環経路
31 圧力指示調節計
32 調節弁
41 レベル調節計
42 調節弁
100 多結晶シリコン製造システム
Claims (15)
- 多結晶シリコン製造用の反応炉と、
冷却媒体を貯蔵する冷媒タンクと、
冷却媒体を前記冷媒タンクから前記反応炉に供給するとともに前記反応炉に設けられた冷媒流路部を経由して前記冷媒タンクに回収する冷媒循環経路と、
前記冷媒タンクに回収される冷却媒体の一部をエネルギー回収用として取り出すエネルギー回収部とを備え、
前記反応炉に供給される冷却媒体として標準沸点よりも高い温度の熱水が用いられ、
該熱水を気化させたスチームが前記エネルギー回収部より取り出され、
前記熱水を前記反応炉に循環させることにより前記反応炉の炉内側表面温度を400℃以下に制御しつつ多結晶シリコンの製造を行うことを特徴とする多結晶シリコン製造システム。 - 前記冷媒循環経路中の前記反応炉より下流側に、前記熱水を減圧する第1圧力制御部と、前記冷媒タンク内の圧力を制御する第2圧力制御部とをさらに備え、
前記第1圧力制御部で前記熱水の圧力を減圧することにより前記熱水をフラッシュさせてスチームを発生させると同時に前記熱水の冷却を行うことを特徴とする請求項1に記載の多結晶シリコン製造システム。 - 前記熱水の温度は200℃未満である請求項1または2に記載の多結晶シリコン製造システム。
- 前記反応炉には、内壁の炉内表面側に、クロム(Cr)、ニッケル(Ni)、およびシリコン(Si)の含有質量%をそれぞれ[Cr]、[Ni]、および[Si]としたときに、R=[Cr]+[Ni]−1.5[Si]で定義付けられるR値が40%以上となる組成の第1の合金材料からなる耐食層が設けられている請求項1または2に記載の多結晶シリコン製造システム。
- 前記R値が60%以上である、請求項4に記載の多結晶シリコン製造システム。
- 前記第1の合金材料のCr、Ni、およびSiの含有質量%はそれぞれ、[Cr]:14.6〜25.2質量%、[Ni]:19.6〜77.5質量%、[Si]:0.3〜0.6質量%の範囲内にある、請求項4に記載の多結晶シリコン製造システム。
- 前記反応炉内で多結晶シリコンを析出させる際の炉内側表面温度が370℃以下に制御される、請求項4乃至6の何れか1項に記載の多結晶シリコン製造システム。
- 前記内壁の耐食層の炉外側に、前記第1の合金材料よりも高い熱伝導率の第2の合金材料からなる熱伝導層が設けられている、請求項4乃至7の何れか1項に記載の多結晶シリコン製造システム。
- 前記内壁の炉外側に前記冷媒流路部が設けられている、請求項4乃至8の何れか1項に記載の多結晶シリコン製造システム。
- 前記冷媒タンクには該冷媒タンク内に貯蔵されている熱水の液面を検知するとともに不足分を補充する液面制御部が設けられている請求項1乃至9の何れか1項に記載の多結晶シリコン製造システム。
- 前記冷却媒体を前記冷媒タンクから前記反応炉に供給する前記冷媒循環経路内に熱水供給ポンプが設けられている請求項1乃至10の何れか1項に記載の多結晶シリコン製造システム。
- 前記多結晶シリコン製造システムは、ドーパント不純物総量が100原子ppt以下である多結晶シリコンを製造するためのシステムである請求項1乃至11の何れか1項に記載の多結晶シリコン製造システム。
- 請求項1乃至12の何れか1項に記載の多結晶シリコン製造システムを用いた多結晶シリコンの製造方法であって、前記反応炉内壁の炉内側表面温度を400℃未満に制御した状態でシリコン原料ガスを供給し、多結晶シリコンを得ることを特徴とする多結晶シリコンの製造方法。
- クロム、ニッケル、シリコンの含有質量%の関係式[Cr]+[Ni]−1.5[Si]が40%以上の合金からなる鋼種によりプロセスガスに接する反応炉の内壁面を構成し、多結晶シリコンの成長中、前記反応炉の内壁面を370℃以下に保ちながらスチームを発生させることを特徴とする多結晶シリコンの製造方法。
- 多結晶シリコン製造用の反応炉と、標準沸点よりも高い温度の熱水を用いて反応炉を冷却する冷媒循環経路とを有し、前記反応炉から排出された前記熱水をフラッシュさせてスチームを発生させることを特徴とする多結晶シリコン製造装置。
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JP2009211806A JP5552284B2 (ja) | 2009-09-14 | 2009-09-14 | 多結晶シリコン製造システム、多結晶シリコン製造装置および多結晶シリコンの製造方法 |
EP13166153.0A EP2628532B1 (en) | 2009-09-14 | 2010-07-20 | Process for producing polycrystalline silicon |
CN201080040911.7A CN102498063B (zh) | 2009-09-14 | 2010-07-20 | 多晶硅制造系统、多晶硅制造装置及多晶硅的制造方法 |
PCT/JP2010/004647 WO2011030495A1 (ja) | 2009-09-14 | 2010-07-20 | 多結晶シリコン製造システム、多結晶シリコン製造装置および多結晶シリコンの製造方法 |
US13/496,060 US9017482B2 (en) | 2009-09-14 | 2010-07-20 | System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon |
EP10815098.8A EP2479141B1 (en) | 2009-09-14 | 2010-07-20 | System for producing polycrystalline silicon, and process for producing polycrystalline silicon |
AU2010293742A AU2010293742B2 (en) | 2009-09-14 | 2010-07-20 | System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon |
US14/671,086 US10366882B2 (en) | 2009-09-14 | 2015-03-27 | System for producing polycrystalline silicon, apparatus for producing polycrystalline silicon, and process for producing polycrystalline silicon |
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JP5552284B2 (ja) | 2014-07-16 |
US20150206745A1 (en) | 2015-07-23 |
CN102498063B (zh) | 2014-12-31 |
AU2010293742A1 (en) | 2012-04-19 |
EP2628532A1 (en) | 2013-08-21 |
EP2628532B1 (en) | 2019-08-28 |
EP2479141A4 (en) | 2013-08-21 |
US9017482B2 (en) | 2015-04-28 |
CN102498063A (zh) | 2012-06-13 |
EP2479141B1 (en) | 2017-06-28 |
US20120207662A1 (en) | 2012-08-16 |
US10366882B2 (en) | 2019-07-30 |
EP2479141A1 (en) | 2012-07-25 |
WO2011030495A1 (ja) | 2011-03-17 |
AU2010293742B2 (en) | 2013-11-07 |
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