JP2011044546A5 - - Google Patents

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Publication number
JP2011044546A5
JP2011044546A5 JP2009191093A JP2009191093A JP2011044546A5 JP 2011044546 A5 JP2011044546 A5 JP 2011044546A5 JP 2009191093 A JP2009191093 A JP 2009191093A JP 2009191093 A JP2009191093 A JP 2009191093A JP 2011044546 A5 JP2011044546 A5 JP 2011044546A5
Authority
JP
Japan
Prior art keywords
diffusion barrier
barrier layer
layer
pretreatment
electroless plating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2009191093A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011044546A (ja
JP5532743B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009191093A priority Critical patent/JP5532743B2/ja
Priority claimed from JP2009191093A external-priority patent/JP5532743B2/ja
Priority to TW099111380A priority patent/TWI419276B/zh
Priority to US12/766,966 priority patent/US8581411B2/en
Publication of JP2011044546A publication Critical patent/JP2011044546A/ja
Publication of JP2011044546A5 publication Critical patent/JP2011044546A5/ja
Priority to US14/050,412 priority patent/US20140035145A1/en
Application granted granted Critical
Publication of JP5532743B2 publication Critical patent/JP5532743B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2009191093A 2009-08-20 2009-08-20 半導体装置及びその製造方法 Expired - Fee Related JP5532743B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009191093A JP5532743B2 (ja) 2009-08-20 2009-08-20 半導体装置及びその製造方法
TW099111380A TWI419276B (zh) 2009-08-20 2010-04-13 Semiconductor device and manufacturing method thereof
US12/766,966 US8581411B2 (en) 2009-08-20 2010-04-26 Semiconductor device
US14/050,412 US20140035145A1 (en) 2009-08-20 2013-10-10 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009191093A JP5532743B2 (ja) 2009-08-20 2009-08-20 半導体装置及びその製造方法

Publications (3)

Publication Number Publication Date
JP2011044546A JP2011044546A (ja) 2011-03-03
JP2011044546A5 true JP2011044546A5 (enExample) 2012-07-05
JP5532743B2 JP5532743B2 (ja) 2014-06-25

Family

ID=43604671

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009191093A Expired - Fee Related JP5532743B2 (ja) 2009-08-20 2009-08-20 半導体装置及びその製造方法

Country Status (3)

Country Link
US (2) US8581411B2 (enExample)
JP (1) JP5532743B2 (enExample)
TW (1) TWI419276B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9616379B2 (en) * 2013-07-25 2017-04-11 Korea Institute Of Energy Research Method for preparing hydrogen separation membrane and device for preparing hydrogen separation membrane
CN106133887B (zh) * 2014-03-27 2019-11-08 三菱电机株式会社 半导体装置、半导体装置的制造方法
WO2023079631A1 (ja) * 2021-11-04 2023-05-11 三菱電機株式会社 半導体装置及びその製造方法
JPWO2024189685A1 (enExample) * 2023-03-10 2024-09-19

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3642528A (en) * 1968-06-05 1972-02-15 Matsushita Electronics Corp Semiconductor device and method of making same
US4179533A (en) * 1978-04-25 1979-12-18 The United States Of America As Represented By The Secretary Of The Navy Multi-refractory films for gallium arsenide devices
US5075763A (en) * 1988-09-28 1991-12-24 Kopin Corporation High temperature metallization system for contacting semiconductor materials
JPH03109725A (ja) * 1989-09-25 1991-05-09 Fujitsu Ltd 半導体装置の製造方法
JP2679320B2 (ja) * 1989-12-20 1997-11-19 富士電機株式会社 ショットキバリアダイオード
US5027189A (en) * 1990-01-10 1991-06-25 Hughes Aircraft Company Integrated circuit solder die-attach design and method
JPH07193214A (ja) 1993-12-27 1995-07-28 Mitsubishi Electric Corp バイアホール及びその形成方法
US5956362A (en) * 1996-02-27 1999-09-21 Matsushita Electric Industrial Co., Ltd. Semiconductor light emitting device and method of etching
JP3724110B2 (ja) * 1997-04-24 2005-12-07 三菱電機株式会社 半導体装置の製造方法
EP1091393B1 (en) * 1999-02-18 2008-04-09 The Furukawa Electric Co., Ltd. Electrode for semiconductor device and its manufacturing method
JP3462166B2 (ja) * 2000-09-08 2003-11-05 富士通カンタムデバイス株式会社 化合物半導体装置
US6787910B2 (en) * 2002-07-23 2004-09-07 National Chiao Tung University Schottky structure in GaAs semiconductor device
JP3715975B2 (ja) * 2003-04-24 2005-11-16 株式会社半導体理工学研究センター 多層配線構造の製造方法
JP2005109058A (ja) * 2003-09-30 2005-04-21 Sanyo Electric Co Ltd 半導体素子およびその製造方法
JP4637009B2 (ja) 2005-12-02 2011-02-23 三菱電機株式会社 半導体装置の製造方法
KR100761467B1 (ko) * 2006-06-28 2007-09-27 삼성전자주식회사 금속배선 및 그 형성 방법
JP2008251562A (ja) * 2007-03-29 2008-10-16 Sharp Corp 半導体レーザ素子およびその形成方法
JP2009064961A (ja) * 2007-09-06 2009-03-26 Sharp Corp 半導体レーザ装置およびその製造方法

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