JP2011035209A - 半導体装置 - Google Patents

半導体装置 Download PDF

Info

Publication number
JP2011035209A
JP2011035209A JP2009180984A JP2009180984A JP2011035209A JP 2011035209 A JP2011035209 A JP 2011035209A JP 2009180984 A JP2009180984 A JP 2009180984A JP 2009180984 A JP2009180984 A JP 2009180984A JP 2011035209 A JP2011035209 A JP 2011035209A
Authority
JP
Japan
Prior art keywords
voltage
transistor
memory cell
cutoff
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009180984A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011035209A5 (enExample
Inventor
Yukihiro Wada
征大 和田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
Renesas Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Electronics Corp filed Critical Renesas Electronics Corp
Priority to JP2009180984A priority Critical patent/JP2011035209A/ja
Priority to US12/846,446 priority patent/US8325533B2/en
Publication of JP2011035209A publication Critical patent/JP2011035209A/ja
Publication of JP2011035209A5 publication Critical patent/JP2011035209A5/ja
Priority to US13/667,373 priority patent/US8582366B2/en
Pending legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits

Landscapes

  • Read Only Memory (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
JP2009180984A 2009-08-03 2009-08-03 半導体装置 Pending JP2011035209A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009180984A JP2011035209A (ja) 2009-08-03 2009-08-03 半導体装置
US12/846,446 US8325533B2 (en) 2009-08-03 2010-07-29 Semiconductor device using charge pump circuit
US13/667,373 US8582366B2 (en) 2009-08-03 2012-11-02 Semiconductor device using charge pump circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009180984A JP2011035209A (ja) 2009-08-03 2009-08-03 半導体装置

Publications (2)

Publication Number Publication Date
JP2011035209A true JP2011035209A (ja) 2011-02-17
JP2011035209A5 JP2011035209A5 (enExample) 2012-04-05

Family

ID=43526854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009180984A Pending JP2011035209A (ja) 2009-08-03 2009-08-03 半導体装置

Country Status (2)

Country Link
US (2) US8325533B2 (enExample)
JP (1) JP2011035209A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244046A (ja) * 2011-05-23 2012-12-10 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2023114488A (ja) * 2022-02-07 2023-08-18 富士通セミコンダクターメモリソリューション株式会社 半導体装置及びスタンバイ電流低減方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
JP2011035209A (ja) * 2009-08-03 2011-02-17 Renesas Electronics Corp 半導体装置
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US9267980B2 (en) 2011-08-15 2016-02-23 Micron Technology, Inc. Capacitance evaluation apparatuses and methods
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
JP6492202B1 (ja) * 2018-03-05 2019-03-27 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置および消去方法
US10607664B2 (en) * 2018-03-22 2020-03-31 Micron Technology, Inc. Sub-threshold voltage leakage current tracking
US11703927B2 (en) * 2020-03-27 2023-07-18 Intel Corporation Leakage degradation control and measurement
US12119066B2 (en) * 2021-11-10 2024-10-15 Samsung Electronics Co., Ltd. Flash memory device having multi-stack structure and channel separation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098156A (ja) * 1996-09-19 1998-04-14 Mitsubishi Electric Corp 半導体装置および半導体装置のリセット方法
JP2003017569A (ja) * 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体集積回路
JP2003297925A (ja) * 2002-03-28 2003-10-17 Kawasaki Microelectronics Kk 半導体集積回路
JP2003338553A (ja) * 2002-03-14 2003-11-28 Toshiba Corp 半導体装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276251A (ja) 1988-09-12 1990-03-15 Hitachi Ltd 半導体集積回路装置
TW324101B (en) * 1995-12-21 1998-01-01 Hitachi Ltd Semiconductor integrated circuit and its working method
JP3614546B2 (ja) * 1995-12-27 2005-01-26 富士通株式会社 半導体集積回路
US5907484A (en) * 1996-04-25 1999-05-25 Programmable Microelectronics Corp. Charge pump
JP2002026254A (ja) * 2000-07-03 2002-01-25 Hitachi Ltd 半導体集積回路および不揮発性メモリ
KR100862993B1 (ko) * 2006-10-12 2008-10-13 주식회사 하이닉스반도체 반도체 집적 회로의 전원 공급 장치
US7592857B2 (en) * 2007-12-21 2009-09-22 G-Time Electronic Co., Ltd. Charge pump circuit
JP2011035209A (ja) * 2009-08-03 2011-02-17 Renesas Electronics Corp 半導体装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1098156A (ja) * 1996-09-19 1998-04-14 Mitsubishi Electric Corp 半導体装置および半導体装置のリセット方法
JP2003017569A (ja) * 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体集積回路
JP2003338553A (ja) * 2002-03-14 2003-11-28 Toshiba Corp 半導体装置
JP2003297925A (ja) * 2002-03-28 2003-10-17 Kawasaki Microelectronics Kk 半導体集積回路

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012244046A (ja) * 2011-05-23 2012-12-10 Fujitsu Semiconductor Ltd 半導体装置及びその製造方法
JP2023114488A (ja) * 2022-02-07 2023-08-18 富士通セミコンダクターメモリソリューション株式会社 半導体装置及びスタンバイ電流低減方法

Also Published As

Publication number Publication date
US20110026329A1 (en) 2011-02-03
US8325533B2 (en) 2012-12-04
US8582366B2 (en) 2013-11-12
US20130058167A1 (en) 2013-03-07

Similar Documents

Publication Publication Date Title
JP2011035209A (ja) 半導体装置
US6954377B2 (en) Non-volatile differential dynamic random access memory
KR101287447B1 (ko) 이이피롬 셀, 이이피롬 셀 제조 방법 및 이이피롬 셀에서의데이터 읽기 방법
JP2001195890A (ja) 不揮発性半導体メモリ装置の書込み方式および書込み回路
JP2010514196A (ja) ２ｔｎｏｒ型不揮発性メモリセルアレイ及び２ｔｎｏｒ型不揮発性メモリのデータ処理方法
US20130039127A1 (en) Non-volatile static random access memory devices and methods of operations
TWI559663B (zh) Boost circuit
US8004904B2 (en) Semiconductor integrated circuit device
JP2009501406A (ja) 不揮発性メモリにおけるスナップバックを改良するための負電圧放電方式
EP0750314B1 (en) Negative word line voltage regulation circuit for electrically erasable semiconductor memory devices
JP3914340B2 (ja) フラッシュメモリ装置
JPH1083683A (ja) 不揮発性半導体メモリ装置
JP2003208794A (ja) 不揮発性半導体記憶装置
US6775171B2 (en) Method of utilizing voltage gradients to guide dielectric breakdowns for non-volatile memory elements and related embedded memories
US6751126B2 (en) Clamping circuit and nonvolatile memory device using the same
CN101461009A (zh) 用于编程闪速或ee阵列的阵列源极线（avss）控制的高电压调整
US20040100849A1 (en) Method of utilizing a plurality of voltage pulses to program non-volatile memory elements and related embedded memories
US8000137B2 (en) Nonvolatile semiconductor memory device and usage method thereof
KR20020096876A (ko) 반도체 기억장치
JP5675464B2 (ja) 半導体集積回路
CN118629462B (zh) 一种具备ram操作和nvm特征的非易失性半导体存储装置
CN112509626A (zh) 非易失性存储器及其控制方法
JP2006236560A (ja) 半導体デバイスおよび半導体デバイスの動作方法
KR100600316B1 (ko) 플래쉬 메모리 셀 및 그 소거 방법
US7262993B2 (en) Nonvolatile semiconductor memory device

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120217

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120217

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130814

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20130822

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20131205