JP2011035209A5 - - Google Patents

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Publication number
JP2011035209A5
JP2011035209A5 JP2009180984A JP2009180984A JP2011035209A5 JP 2011035209 A5 JP2011035209 A5 JP 2011035209A5 JP 2009180984 A JP2009180984 A JP 2009180984A JP 2009180984 A JP2009180984 A JP 2009180984A JP 2011035209 A5 JP2011035209 A5 JP 2011035209A5
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JP
Japan
Prior art keywords
voltage
current flowing
leak current
capacitive element
capacitor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009180984A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011035209A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009180984A priority Critical patent/JP2011035209A/ja
Priority claimed from JP2009180984A external-priority patent/JP2011035209A/ja
Priority to US12/846,446 priority patent/US8325533B2/en
Publication of JP2011035209A publication Critical patent/JP2011035209A/ja
Publication of JP2011035209A5 publication Critical patent/JP2011035209A5/ja
Priority to US13/667,373 priority patent/US8582366B2/en
Pending legal-status Critical Current

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JP2009180984A 2009-08-03 2009-08-03 半導体装置 Pending JP2011035209A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009180984A JP2011035209A (ja) 2009-08-03 2009-08-03 半導体装置
US12/846,446 US8325533B2 (en) 2009-08-03 2010-07-29 Semiconductor device using charge pump circuit
US13/667,373 US8582366B2 (en) 2009-08-03 2012-11-02 Semiconductor device using charge pump circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009180984A JP2011035209A (ja) 2009-08-03 2009-08-03 半導体装置

Publications (2)

Publication Number Publication Date
JP2011035209A JP2011035209A (ja) 2011-02-17
JP2011035209A5 true JP2011035209A5 (enExample) 2012-04-05

Family

ID=43526854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009180984A Pending JP2011035209A (ja) 2009-08-03 2009-08-03 半導体装置

Country Status (2)

Country Link
US (2) US8325533B2 (enExample)
JP (1) JP2011035209A (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8710907B2 (en) * 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
JP2011035209A (ja) * 2009-08-03 2011-02-17 Renesas Electronics Corp 半導体装置
US20110133820A1 (en) * 2009-12-09 2011-06-09 Feng Pan Multi-Stage Charge Pump with Variable Number of Boosting Stages
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
JP5733020B2 (ja) * 2011-05-23 2015-06-10 富士通セミコンダクター株式会社 半導体装置及びその製造方法
US9467047B2 (en) * 2011-05-31 2016-10-11 Semiconductor Energy Laboratory Co., Ltd. DC-DC converter, power source circuit, and semiconductor device
US9267980B2 (en) 2011-08-15 2016-02-23 Micron Technology, Inc. Capacitance evaluation apparatuses and methods
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
JP6492202B1 (ja) * 2018-03-05 2019-03-27 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置および消去方法
US10607664B2 (en) * 2018-03-22 2020-03-31 Micron Technology, Inc. Sub-threshold voltage leakage current tracking
US11703927B2 (en) * 2020-03-27 2023-07-18 Intel Corporation Leakage degradation control and measurement
US12119066B2 (en) * 2021-11-10 2024-10-15 Samsung Electronics Co., Ltd. Flash memory device having multi-stack structure and channel separation method thereof
JP2023114488A (ja) * 2022-02-07 2023-08-18 富士通セミコンダクターメモリソリューション株式会社 半導体装置及びスタンバイ電流低減方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0276251A (ja) 1988-09-12 1990-03-15 Hitachi Ltd 半導体集積回路装置
TW324101B (en) * 1995-12-21 1998-01-01 Hitachi Ltd Semiconductor integrated circuit and its working method
JP3614546B2 (ja) * 1995-12-27 2005-01-26 富士通株式会社 半導体集積回路
US5907484A (en) * 1996-04-25 1999-05-25 Programmable Microelectronics Corp. Charge pump
JPH1098156A (ja) * 1996-09-19 1998-04-14 Mitsubishi Electric Corp 半導体装置および半導体装置のリセット方法
JP2002026254A (ja) * 2000-07-03 2002-01-25 Hitachi Ltd 半導体集積回路および不揮発性メモリ
JP2003017569A (ja) * 2001-06-29 2003-01-17 Mitsubishi Electric Corp 半導体集積回路
JP3989313B2 (ja) * 2002-03-14 2007-10-10 株式会社東芝 半導体装置
JP2003297925A (ja) * 2002-03-28 2003-10-17 Kawasaki Microelectronics Kk 半導体集積回路
KR100862993B1 (ko) * 2006-10-12 2008-10-13 주식회사 하이닉스반도체 반도체 집적 회로의 전원 공급 장치
US7592857B2 (en) * 2007-12-21 2009-09-22 G-Time Electronic Co., Ltd. Charge pump circuit
JP2011035209A (ja) * 2009-08-03 2011-02-17 Renesas Electronics Corp 半導体装置

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