JP2010541222A5 - - Google Patents

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Publication number
JP2010541222A5
JP2010541222A5 JP2010526157A JP2010526157A JP2010541222A5 JP 2010541222 A5 JP2010541222 A5 JP 2010541222A5 JP 2010526157 A JP2010526157 A JP 2010526157A JP 2010526157 A JP2010526157 A JP 2010526157A JP 2010541222 A5 JP2010541222 A5 JP 2010541222A5
Authority
JP
Japan
Prior art keywords
semiconductor
based device
glass substrate
manufacturing
deposited
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2010526157A
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English (en)
Japanese (ja)
Other versions
JP2010541222A (ja
JP5295250B2 (ja
Filing date
Publication date
Priority claimed from DE102008005345A external-priority patent/DE102008005345A1/de
Application filed filed Critical
Publication of JP2010541222A publication Critical patent/JP2010541222A/ja
Publication of JP2010541222A5 publication Critical patent/JP2010541222A5/ja
Application granted granted Critical
Publication of JP5295250B2 publication Critical patent/JP5295250B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2010526157A 2007-09-28 2008-09-12 半導体ベースの素子、半導体ベースの素子の収容部材、ならびに、半導体ベースの素子の製造方法 Expired - Fee Related JP5295250B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007046744.5 2007-09-28
DE102007046744 2007-09-28
DE102008005345.7 2008-01-21
DE102008005345A DE102008005345A1 (de) 2007-09-28 2008-01-21 Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements
PCT/DE2008/001533 WO2009039829A1 (de) 2007-09-28 2008-09-12 Strahlungsemittierendes halbleiterbauelement, aufnahme für ein strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung eines strahlungsemittierenden halbleiterbauelements

Publications (3)

Publication Number Publication Date
JP2010541222A JP2010541222A (ja) 2010-12-24
JP2010541222A5 true JP2010541222A5 (enExample) 2011-08-18
JP5295250B2 JP5295250B2 (ja) 2013-09-18

Family

ID=40384495

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010526157A Expired - Fee Related JP5295250B2 (ja) 2007-09-28 2008-09-12 半導体ベースの素子、半導体ベースの素子の収容部材、ならびに、半導体ベースの素子の製造方法

Country Status (8)

Country Link
US (1) US8878195B2 (enExample)
EP (1) EP2195865B1 (enExample)
JP (1) JP5295250B2 (enExample)
KR (1) KR101515252B1 (enExample)
CN (1) CN101809774B (enExample)
DE (1) DE102008005345A1 (enExample)
TW (1) TW200921953A (enExample)
WO (1) WO2009039829A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9270427B2 (en) 2010-01-11 2016-02-23 Futurewei Technologies, Inc. System and method for multiplexing control and data channels in a multiple input, multiple output communications system
DE102011077898A1 (de) * 2011-06-21 2012-12-27 Osram Ag LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung
JP6848245B2 (ja) * 2016-07-27 2021-03-24 日亜化学工業株式会社 発光装置

Family Cites Families (27)

* Cited by examiner, † Cited by third party
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EP0148608B1 (en) * 1983-12-22 1988-04-13 Sumitomo Chemical Company, Limited Film-forming composition comprising indium and tin compounds
US4837927A (en) * 1985-04-22 1989-06-13 Savage John Jun Method of mounting circuit component to a circuit board
JPS63262259A (ja) * 1987-04-20 1988-10-28 Matsushita Electric Ind Co Ltd 光プリンタ用書き込みヘツド
US4942405A (en) * 1988-10-11 1990-07-17 Hewlett-Packard Company Light emitting diode print head assembly
JPH04159519A (ja) * 1990-10-24 1992-06-02 Stanley Electric Co Ltd Ｌｅｄバックライト付き液晶表示装置及びその製造方法
JP3460330B2 (ja) * 1994-08-31 2003-10-27 京セラ株式会社 画像装置
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
DE19600306C1 (de) * 1996-01-05 1997-04-10 Siemens Ag Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung
DE19746893B4 (de) * 1997-10-23 2005-09-01 Siemens Ag Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung
JP4109756B2 (ja) 1998-07-07 2008-07-02 スタンレー電気株式会社 発光ダイオード
JP2000135814A (ja) 1998-10-30 2000-05-16 Kyocera Corp 光プリンタヘッド
JP2001077430A (ja) * 1999-09-02 2001-03-23 Citizen Electronics Co Ltd 発光ダイオード
WO2001009963A1 (en) 1999-07-29 2001-02-08 Citizen Electronics Co., Ltd. Light-emitting diode
JP3652945B2 (ja) * 1999-12-28 2005-05-25 松下電器産業株式会社 光情報処理装置
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
DE10308890A1 (de) 2003-02-28 2004-09-09 Opto Tech Corporation Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung
EP2596948B1 (en) * 2003-03-10 2020-02-26 Toyoda Gosei Co., Ltd. Method of making a semiconductor device
JP4401681B2 (ja) 2003-05-19 2010-01-20 日東樹脂工業株式会社 光拡散体及びそれを用いた光学部材乃至光学デバイス
JP2005072129A (ja) * 2003-08-21 2005-03-17 Nec Lighting Ltd 可視光線発光装置とその製造方法及び表示装置
JP4843235B2 (ja) * 2004-03-18 2011-12-21 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
WO2006117710A1 (en) 2005-04-29 2006-11-09 Koninklijke Philips Electronics N.V. Light source with glass housing
TWM285801U (en) 2005-08-03 2006-01-11 Lighthouse Technology Co Ltd Light-emitting diode package structure
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
JP5219331B2 (ja) * 2005-09-13 2013-06-26 株式会社住田光学ガラス 固体素子デバイスの製造方法
JP4759357B2 (ja) * 2005-09-28 2011-08-31 日立アプライアンス株式会社 Ｌｅｄ光源モジュール
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
JP5137059B2 (ja) * 2007-06-20 2013-02-06 新光電気工業株式会社 電子部品用パッケージ及びその製造方法と電子部品装置

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