KR101515252B1 - 복사 방출 반도체 소자，복사 방출 반도체 소자용 수용부 및 복사 방출 반도체 소자의 제조 방법 - Google Patents

복사 방출 반도체 소자，복사 방출 반도체 소자용 수용부 및 복사 방출 반도체 소자의 제조 방법 Download PDF

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KR101515252B1
KR101515252B1 KR1020107009389A KR20107009389A KR101515252B1 KR 101515252 B1 KR101515252 B1 KR 101515252B1 KR 1020107009389 A KR1020107009389 A KR 1020107009389A KR 20107009389 A KR20107009389 A KR 20107009389A KR 101515252 B1 KR101515252 B1 KR 101515252B1
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radiation
glass substrate
semiconductor element
semiconductive
receiving portion
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KR20100063139A (ko
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조르그 소르그
스테판 그루버
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오스람 옵토 세미컨덕터스 게엠베하
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H10H20/8514—Wavelength conversion means characterised by their shape, e.g. plate or foil

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
KR1020107009389A 2007-09-28 2008-09-12 복사 방출 반도체 소자，복사 방출 반도체 소자용 수용부 및 복사 방출 반도체 소자의 제조 방법 Expired - Fee Related KR101515252B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007046744.5 2007-09-28
DE102007046744 2007-09-28
DE102008005345.7 2008-01-21
DE102008005345A DE102008005345A1 (de) 2007-09-28 2008-01-21 Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements
PCT/DE2008/001533 WO2009039829A1 (de) 2007-09-28 2008-09-12 Strahlungsemittierendes halbleiterbauelement, aufnahme für ein strahlungsemittierendes halbleiterbauelement und verfahren zur herstellung eines strahlungsemittierenden halbleiterbauelements

Publications (2)

Publication Number Publication Date
KR20100063139A KR20100063139A (ko) 2010-06-10
KR101515252B1 true KR101515252B1 (ko) 2015-04-24

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KR1020107009389A Expired - Fee Related KR101515252B1 (ko) 2007-09-28 2008-09-12 복사 방출 반도체 소자，복사 방출 반도체 소자용 수용부 및 복사 방출 반도체 소자의 제조 방법

Country Status (8)

Country Link
US (1) US8878195B2 (enExample)
EP (1) EP2195865B1 (enExample)
JP (1) JP5295250B2 (enExample)
KR (1) KR101515252B1 (enExample)
CN (1) CN101809774B (enExample)
DE (1) DE102008005345A1 (enExample)
TW (1) TW200921953A (enExample)
WO (1) WO2009039829A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9270427B2 (en) 2010-01-11 2016-02-23 Futurewei Technologies, Inc. System and method for multiplexing control and data channels in a multiple input, multiple output communications system
DE102011077898A1 (de) * 2011-06-21 2012-12-27 Osram Ag LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung
JP6848245B2 (ja) * 2016-07-27 2021-03-24 日亜化学工業株式会社 発光装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000022222A (ja) 1998-07-07 2000-01-21 Stanley Electric Co Ltd 発光ダイオード

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0148608B1 (en) * 1983-12-22 1988-04-13 Sumitomo Chemical Company, Limited Film-forming composition comprising indium and tin compounds
US4837927A (en) * 1985-04-22 1989-06-13 Savage John Jun Method of mounting circuit component to a circuit board
JPS63262259A (ja) * 1987-04-20 1988-10-28 Matsushita Electric Ind Co Ltd 光プリンタ用書き込みヘツド
US4942405A (en) * 1988-10-11 1990-07-17 Hewlett-Packard Company Light emitting diode print head assembly
JPH04159519A (ja) * 1990-10-24 1992-06-02 Stanley Electric Co Ltd Ｌｅｄバックライト付き液晶表示装置及びその製造方法
JP3460330B2 (ja) * 1994-08-31 2003-10-27 京セラ株式会社 画像装置
DE19527026C2 (de) * 1995-07-24 1997-12-18 Siemens Ag Optoelektronischer Wandler und Herstellverfahren
DE19600306C1 (de) * 1996-01-05 1997-04-10 Siemens Ag Halbleiter-Bauelement, insb. mit einer optoelektronischen Schaltung bzw. Anordnung
DE19746893B4 (de) * 1997-10-23 2005-09-01 Siemens Ag Optoelektronisches Bauelement mit Wärmesenke im Sockelteil und Verfahren zur Herstellung
JP2000135814A (ja) 1998-10-30 2000-05-16 Kyocera Corp 光プリンタヘッド
JP2001077430A (ja) * 1999-09-02 2001-03-23 Citizen Electronics Co Ltd 発光ダイオード
WO2001009963A1 (en) 1999-07-29 2001-02-08 Citizen Electronics Co., Ltd. Light-emitting diode
JP3652945B2 (ja) * 1999-12-28 2005-05-25 松下電器産業株式会社 光情報処理装置
US7064355B2 (en) * 2000-09-12 2006-06-20 Lumileds Lighting U.S., Llc Light emitting diodes with improved light extraction efficiency
DE10308890A1 (de) 2003-02-28 2004-09-09 Opto Tech Corporation Gehäusestruktur für eine Lichtemissionsdiode und Verfahren zu dessen Herstellung
EP2596948B1 (en) * 2003-03-10 2020-02-26 Toyoda Gosei Co., Ltd. Method of making a semiconductor device
JP4401681B2 (ja) 2003-05-19 2010-01-20 日東樹脂工業株式会社 光拡散体及びそれを用いた光学部材乃至光学デバイス
JP2005072129A (ja) * 2003-08-21 2005-03-17 Nec Lighting Ltd 可視光線発光装置とその製造方法及び表示装置
JP4843235B2 (ja) * 2004-03-18 2011-12-21 昭和電工株式会社 Ｉｉｉ族窒化物半導体発光素子の製造方法
WO2006117710A1 (en) 2005-04-29 2006-11-09 Koninklijke Philips Electronics N.V. Light source with glass housing
TWM285801U (en) 2005-08-03 2006-01-11 Lighthouse Technology Co Ltd Light-emitting diode package structure
US7329907B2 (en) * 2005-08-12 2008-02-12 Avago Technologies, Ecbu Ip Pte Ltd Phosphor-converted LED devices having improved light distribution uniformity
JP5219331B2 (ja) * 2005-09-13 2013-06-26 株式会社住田光学ガラス 固体素子デバイスの製造方法
JP4759357B2 (ja) * 2005-09-28 2011-08-31 日立アプライアンス株式会社 Ｌｅｄ光源モジュール
US20070228386A1 (en) * 2006-03-30 2007-10-04 Jin-Shown Shie Wire-bonding free packaging structure of light emitted diode
JP5137059B2 (ja) * 2007-06-20 2013-02-06 新光電気工業株式会社 電子部品用パッケージ及びその製造方法と電子部品装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000022222A (ja) 1998-07-07 2000-01-21 Stanley Electric Co Ltd 発光ダイオード

Also Published As

Publication number Publication date
JP2010541222A (ja) 2010-12-24
US20110057218A1 (en) 2011-03-10
DE102008005345A1 (de) 2009-04-02
CN101809774B (zh) 2012-08-29
EP2195865A1 (de) 2010-06-16
EP2195865B1 (de) 2018-03-14
JP5295250B2 (ja) 2013-09-18
KR20100063139A (ko) 2010-06-10
CN101809774A (zh) 2010-08-18
TW200921953A (en) 2009-05-16
WO2009039829A1 (de) 2009-04-02
US8878195B2 (en) 2014-11-04

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