JP2010534896A5 - - Google Patents

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Publication number
JP2010534896A5
JP2010534896A5 JP2010517037A JP2010517037A JP2010534896A5 JP 2010534896 A5 JP2010534896 A5 JP 2010534896A5 JP 2010517037 A JP2010517037 A JP 2010517037A JP 2010517037 A JP2010517037 A JP 2010517037A JP 2010534896 A5 JP2010534896 A5 JP 2010534896A5
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Japan
Prior art keywords
test
memory
voltage level
operating
testing
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JP2010517037A
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Japanese (ja)
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JP5462160B2 (ja
JP2010534896A (ja
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Priority claimed from US11/777,635 external-priority patent/US7616509B2/en
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JP2010517037A 2007-07-13 2008-05-28 メモリの動的電圧調整 Active JP5462160B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/777,635 US7616509B2 (en) 2007-07-13 2007-07-13 Dynamic voltage adjustment for memory
US11/777,635 2007-07-13
PCT/US2008/064969 WO2009011977A1 (en) 2007-07-13 2008-05-28 Dynamic voltage adjustment for memory

Publications (3)

Publication Number Publication Date
JP2010534896A JP2010534896A (ja) 2010-11-11
JP2010534896A5 true JP2010534896A5 (https=) 2011-07-14
JP5462160B2 JP5462160B2 (ja) 2014-04-02

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JP2010517037A Active JP5462160B2 (ja) 2007-07-13 2008-05-28 メモリの動的電圧調整

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US (1) US7616509B2 (https=)
JP (1) JP5462160B2 (https=)
KR (1) KR101498514B1 (https=)
CN (1) CN101743598B (https=)
TW (1) TWI490873B (https=)
WO (1) WO2009011977A1 (https=)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724220B1 (en) 2000-10-26 2004-04-20 Cyress Semiconductor Corporation Programmable microcontroller architecture (mixed analog/digital)
US8103496B1 (en) 2000-10-26 2012-01-24 Cypress Semicondutor Corporation Breakpoint control in an in-circuit emulation system
US8160864B1 (en) 2000-10-26 2012-04-17 Cypress Semiconductor Corporation In-circuit emulator and pod synchronized boot
US8176296B2 (en) 2000-10-26 2012-05-08 Cypress Semiconductor Corporation Programmable microcontroller architecture
US8149048B1 (en) 2000-10-26 2012-04-03 Cypress Semiconductor Corporation Apparatus and method for programmable power management in a programmable analog circuit block
US7406674B1 (en) 2001-10-24 2008-07-29 Cypress Semiconductor Corporation Method and apparatus for generating microcontroller configuration information
US8078970B1 (en) 2001-11-09 2011-12-13 Cypress Semiconductor Corporation Graphical user interface with user-selectable list-box
US8042093B1 (en) 2001-11-15 2011-10-18 Cypress Semiconductor Corporation System providing automatic source code generation for personalization and parameterization of user modules
US8069405B1 (en) 2001-11-19 2011-11-29 Cypress Semiconductor Corporation User interface for efficiently browsing an electronic document using data-driven tabs
US6971004B1 (en) 2001-11-19 2005-11-29 Cypress Semiconductor Corp. System and method of dynamically reconfiguring a programmable integrated circuit
US7844437B1 (en) 2001-11-19 2010-11-30 Cypress Semiconductor Corporation System and method for performing next placements and pruning of disallowed placements for programming an integrated circuit
US8103497B1 (en) 2002-03-28 2012-01-24 Cypress Semiconductor Corporation External interface for event architecture
US7295049B1 (en) 2004-03-25 2007-11-13 Cypress Semiconductor Corporation Method and circuit for rapid alignment of signals
US7332976B1 (en) * 2005-02-04 2008-02-19 Cypress Semiconductor Corporation Poly-phase frequency synthesis oscillator
US7400183B1 (en) 2005-05-05 2008-07-15 Cypress Semiconductor Corporation Voltage controlled oscillator delay cell and method
US7652494B2 (en) * 2005-07-01 2010-01-26 Apple Inc. Operating an integrated circuit at a minimum supply voltage
WO2007063264A1 (en) * 2005-12-02 2007-06-07 Arm Limited Data processing system
US8067948B2 (en) 2006-03-27 2011-11-29 Cypress Semiconductor Corporation Input/output multiplexer bus
US8040266B2 (en) * 2007-04-17 2011-10-18 Cypress Semiconductor Corporation Programmable sigma-delta analog-to-digital converter
US8130025B2 (en) 2007-04-17 2012-03-06 Cypress Semiconductor Corporation Numerical band gap
US8111577B2 (en) 2007-04-17 2012-02-07 Cypress Semiconductor Corporation System comprising a state-monitoring memory element
US8026739B2 (en) 2007-04-17 2011-09-27 Cypress Semiconductor Corporation System level interconnect with programmable switching
US9720805B1 (en) 2007-04-25 2017-08-01 Cypress Semiconductor Corporation System and method for controlling a target device
US8049569B1 (en) 2007-09-05 2011-11-01 Cypress Semiconductor Corporation Circuit and method for improving the accuracy of a crystal-less oscillator having dual-frequency modes
US8116151B2 (en) * 2008-08-11 2012-02-14 Spansion Llc Multi-level storage algorithm to emphasize disturb conditions
US7915910B2 (en) 2009-01-28 2011-03-29 Apple Inc. Dynamic voltage and frequency management
CN101957397A (zh) * 2009-07-14 2011-01-26 鸿富锦精密工业(深圳)有限公司 电压自动量测系统及量测方法
US9142262B2 (en) * 2009-10-23 2015-09-22 Rambus Inc. Stacked semiconductor device
US8717093B2 (en) * 2010-01-08 2014-05-06 Mindspeed Technologies, Inc. System on chip power management through package configuration
KR20120004017A (ko) 2010-07-06 2012-01-12 주식회사 하이닉스반도체 동적 전압 조정 모드 판별 장치와 방법 및 이를 이용한 펌핑 전압 감지 장치와 방법
US8909957B2 (en) * 2010-11-04 2014-12-09 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Dynamic voltage adjustment to computer system memory
KR101218096B1 (ko) * 2010-12-17 2013-01-03 에스케이하이닉스 주식회사 반도체 장치의 테스트 방법 및 반도체 장치의 테스트 시스템
EP2673684B1 (en) 2011-02-08 2019-06-05 NXP USA, Inc. Integrated circuit device, power management module and method for providing power management
US8797813B2 (en) * 2011-05-17 2014-08-05 Maxlinear, Inc. Method and apparatus for memory power and/or area reduction
KR20150090418A (ko) * 2014-01-29 2015-08-06 에스케이하이닉스 주식회사 최소 동작 전원을 사용하는 시스템 및 메모리의 전원전압 설정 방법
US9461626B2 (en) * 2014-07-14 2016-10-04 Qualcomm Incorporated Dynamic voltage adjustment of an I/O interface signal
US9933828B2 (en) 2014-08-19 2018-04-03 Lenovo Enterprise Solutions (Singapore) Pte. Ltd. Controlling power consumption of a voltage regulator in a computer system
CN105575438B (zh) * 2014-10-16 2020-11-06 恩智浦美国有限公司 用于测试存储器的方法及装置
US9786356B2 (en) * 2015-01-30 2017-10-10 Qualcomm Incorporated Memory device with adaptive voltage scaling based on error information
JP2016157383A (ja) * 2015-02-26 2016-09-01 富士通株式会社 半導体集積回路装置、無線センサーネットワーク端末および半導体集積回路装置のメモリ制御方法
CN105989900B (zh) * 2015-03-05 2019-06-07 展讯通信(上海)有限公司 片上系统芯片及其嵌入式存储器最低工作电压的测量
US9495000B1 (en) * 2015-04-30 2016-11-15 Qualcomm Technologies International, Ltd. Power management of a wireless device
US9905277B2 (en) 2015-06-30 2018-02-27 Industrial Technology Research Institute Memory controlling method and memory system
TWI584304B (zh) * 2016-05-23 2017-05-21 大心電子(英屬維京群島)股份有限公司 解碼方法、記憶體儲存裝置及記憶體控制電路單元
CN107436820B (zh) * 2016-05-27 2020-07-17 深圳大心电子科技有限公司 解码方法、存储器存储装置及存储器控制电路单元
US10338670B2 (en) 2016-06-10 2019-07-02 Microsoft Technology Licensing, Llc Input voltage reduction for processing devices
US10310572B2 (en) 2016-06-10 2019-06-04 Microsoft Technology Licensing, Llc Voltage based thermal control of processing device
US10209726B2 (en) 2016-06-10 2019-02-19 Microsoft Technology Licensing, Llc Secure input voltage adjustment in processing devices
US10248186B2 (en) 2016-06-10 2019-04-02 Microsoft Technology Licensing, Llc Processor device voltage characterization
US10725104B2 (en) * 2017-12-22 2020-07-28 Sandisk Technologies Llc Self testing circuit for power optimization
US10446254B1 (en) 2018-05-03 2019-10-15 Western Digital Technologies, Inc. Method for maximizing power efficiency in memory interface block
US10825540B2 (en) 2018-05-16 2020-11-03 Micron Technology, Inc. Memory system quality integral analysis and configuration
US10535417B2 (en) 2018-05-16 2020-01-14 Micron Technology, Inc. Memory system quality margin analysis and configuration
CN109375543B (zh) * 2018-10-31 2020-08-11 珠海全志科技股份有限公司 Dvs电压管理装置、系统及方法、存储介质、计算机设备
US11984723B2 (en) * 2019-06-05 2024-05-14 Mitsubishi Electric Corporation Multi-mode power supply system
CN112382328B (zh) * 2020-11-06 2024-10-11 润昇系统测试(深圳)有限公司 内存测试装置以及测试电压调整方法
US11598806B2 (en) * 2021-01-21 2023-03-07 Nanya Technology Corporation Test apparatus and test method to a memory device
US12204442B2 (en) 2021-04-27 2025-01-21 Micron Technology, Inc. Dynamic voltage supply for memory circuit
US20230079229A1 (en) * 2021-09-10 2023-03-16 Maxim Integrated Products, Inc. Power modulation using dynamic voltage and frequency scaling
US12340857B2 (en) 2021-11-02 2025-06-24 Samsung Electronics Co., Ltd. Electronic device for adjusting driving voltage of volatile memory and method for operating the same
US12217815B2 (en) * 2022-11-16 2025-02-04 Nanya Technology Corporation Memory testing system and memory testing method
US12562198B2 (en) * 2023-03-20 2026-02-24 Micron Technology, Inc. Voltage domain based error management
WO2024196372A1 (en) * 2023-03-23 2024-09-26 Siemens Industry Software Inc. Memory built-in self-test with automated write trim tuning
US12272415B2 (en) * 2023-06-13 2025-04-08 Nanya Technology Corporation System and method for testing memory device

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3609868B2 (ja) 1995-05-30 2005-01-12 株式会社ルネサステクノロジ スタティック型半導体記憶装置
JPH09153290A (ja) * 1995-11-30 1997-06-10 Nec Corp 半導体記憶装置
JP3722334B2 (ja) * 1998-01-27 2005-11-30 株式会社日立製作所 半導体記憶装置
US6628564B1 (en) * 1998-06-29 2003-09-30 Fujitsu Limited Semiconductor memory device capable of driving non-selected word lines to first and second potentials
US6282135B1 (en) * 1999-02-13 2001-08-28 Integrated Device Technology, Inc. Intializing memory cells within a dynamic memory array prior to performing internal memory operations
US6259639B1 (en) * 2000-02-16 2001-07-10 Mitsubishi Denki Kabushiki Kaisha Semiconductor integrated circuit device capable of repairing defective parts in a large-scale memory
US6327224B1 (en) 2000-06-16 2001-12-04 International Business Machines Corporation On-chip method for measuring access time and data-pin spread
US6529436B1 (en) 2001-04-26 2003-03-04 Lsi Logic Corporation Supply degradation compensation for memory self time circuits
US6483754B1 (en) 2001-05-16 2002-11-19 Lsi Logic Corporation Self-time scheme to reduce cycle time for memories
JP2003007094A (ja) * 2001-06-19 2003-01-10 Mitsubishi Electric Corp 半導体記憶装置
JP4162076B2 (ja) * 2002-05-30 2008-10-08 株式会社ルネサステクノロジ 半導体記憶装置
US6630685B1 (en) * 2002-06-24 2003-10-07 Micron Technology, Inc. Probe look ahead: testing parts not currently under a probehead
US7173875B2 (en) 2002-11-29 2007-02-06 International Business Machines Corporation SRAM array with improved cell stability
US7333357B2 (en) 2003-12-11 2008-02-19 Texas Instruments Incorproated Static random access memory device having reduced leakage current during active mode and a method of operating thereof
KR100761358B1 (ko) * 2004-06-03 2007-09-27 주식회사 하이닉스반도체 반도체 기억 소자 및 그의 내부 전압 조절 방법
JP4198644B2 (ja) 2004-06-21 2008-12-17 富士通マイクロエレクトロニクス株式会社 半導体集積回路
US7409315B2 (en) 2004-06-28 2008-08-05 Broadcom Corporation On-board performance monitor and power control system
JP2006114078A (ja) * 2004-10-12 2006-04-27 Toshiba Corp 不揮発性半導体記憶装置及びその動作方法
JP2006118995A (ja) * 2004-10-21 2006-05-11 Oki Electric Ind Co Ltd 半導体集積回路
US20060259840A1 (en) * 2005-05-12 2006-11-16 International Business Machines Corporation Self-test circuitry to determine minimum operating voltage
EP1953762B1 (en) * 2007-01-25 2013-09-18 Imec Memory device with reduced standby power consumption and method for operating same
JP2009076169A (ja) * 2007-09-25 2009-04-09 Fujitsu Microelectronics Ltd 半導体記憶装置
JP2009176340A (ja) * 2008-01-22 2009-08-06 Sony Corp 不揮発性メモリ

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