JP2010534358A - フッ素化組成物を用いて汚染を除去する方法 - Google Patents

フッ素化組成物を用いて汚染を除去する方法 Download PDF

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Publication number
JP2010534358A
JP2010534358A JP2010518247A JP2010518247A JP2010534358A JP 2010534358 A JP2010534358 A JP 2010534358A JP 2010518247 A JP2010518247 A JP 2010518247A JP 2010518247 A JP2010518247 A JP 2010518247A JP 2010534358 A JP2010534358 A JP 2010534358A
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Prior art keywords
substrate
solvent
composition
photoresist
ions
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JP2010518247A
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Japanese (ja)
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JP2010534358A5 (OSRAM
Inventor
ディー． オルソン，エリック
ジー． クラーク，フィリップ
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication of JP2010534358A publication Critical patent/JP2010534358A/ja
Publication of JP2010534358A5 publication Critical patent/JP2010534358A5/ja
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    • H10P50/287—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/28008—Making conductor-insulator-semiconductor electrodes
    • H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H01L21/28079—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being a single metal, e.g. Ta, W, Mo, Al
    • H10D64/01316—
    • H10P70/273—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Weting (AREA)
JP2010518247A 2007-07-25 2008-05-06 フッ素化組成物を用いて汚染を除去する方法 Withdrawn JP2010534358A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/782,766 US20090029274A1 (en) 2007-07-25 2007-07-25 Method for removing contamination with fluorinated compositions
PCT/US2008/062725 WO2009014791A1 (en) 2007-07-25 2008-05-06 Method for removing contamination with fluorinated compositions

Publications (2)

Publication Number Publication Date
JP2010534358A true JP2010534358A (ja) 2010-11-04
JP2010534358A5 JP2010534358A5 (OSRAM) 2011-06-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010518247A Withdrawn JP2010534358A (ja) 2007-07-25 2008-05-06 フッ素化組成物を用いて汚染を除去する方法

Country Status (7)

Country Link
US (1) US20090029274A1 (OSRAM)
EP (1) EP2179440A4 (OSRAM)
JP (1) JP2010534358A (OSRAM)
KR (1) KR20100053574A (OSRAM)
CN (1) CN101779275A (OSRAM)
TW (1) TW200913046A (OSRAM)
WO (1) WO2009014791A1 (OSRAM)

Cited By (3)

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CN106062621A (zh) * 2014-03-06 2016-10-26 赛智电致变色公司 使用非水性流体从电致变色膜的颗粒去除
JP2020520118A (ja) * 2017-05-11 2020-07-02 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 処理された積層ダイ
JPWO2021182182A1 (OSRAM) * 2020-03-12 2021-09-16

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KR101126268B1 (ko) * 2010-09-30 2012-03-20 주식회사 삼한 씨원 표면오염 억제 기능이 있는 황토벽돌 제조방법
US20120286192A1 (en) 2011-05-12 2012-11-15 3M Innovative Properties Company Azeotrope-like compositions with 1,1,1,3,3-pentafluorobutane
TW201333626A (zh) * 2011-11-14 2013-08-16 Orthogonal Inc 用於圖案化使用非氟化光阻之有機材料的方法
US9104104B2 (en) * 2013-04-24 2015-08-11 Orthogonal, Inc. Method of patterning a device
WO2016040551A1 (en) * 2014-09-11 2016-03-17 3M Innovative Properties Company Fluorinated surfactant containing compositions
CN104387831B (zh) * 2014-11-27 2017-05-10 孙更生 一种基于聚硅氧烷的注射针涂层用溶剂组合物
CN105199859B (zh) * 2015-09-17 2018-03-27 惠州学院 一种半导体表面清洗剂及其制备方法
CN105238567B (zh) * 2015-10-10 2017-11-17 泉州市福达科技咨询有限公司 一种环保型含氟清洗剂及其制备方法
US9978601B2 (en) * 2015-10-20 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. Methods for pre-deposition treatment of a work-function metal layer
US9972694B2 (en) 2015-10-20 2018-05-15 Taiwan Semiconductor Manufacturing Company, Ltd. Atomic layer deposition methods and structures thereof
US9799745B2 (en) * 2015-10-20 2017-10-24 Taiwan Semiconductor Manufacturing Co., Ltd. Atomic layer deposition methods and structures thereof
US10204893B2 (en) 2016-05-19 2019-02-12 Invensas Bonding Technologies, Inc. Stacked dies and methods for forming bonded structures
US20180182665A1 (en) 2016-12-28 2018-06-28 Invensas Bonding Technologies, Inc. Processed Substrate
CN108301011B (zh) * 2017-12-25 2020-08-11 博罗县东明化工有限公司 压铸铝合金清洗剂及其制备方法
WO2019208354A1 (ja) * 2018-04-27 2019-10-31 日本ゼオン株式会社 Ｅｕｖリソグラフィ用ポジ型レジスト組成物およびレジストパターン形成方法
US11276676B2 (en) 2018-05-15 2022-03-15 Invensas Bonding Technologies, Inc. Stacked devices and methods of fabrication
WO2020010136A1 (en) 2018-07-06 2020-01-09 Invensas Bonding Technologies, Inc. Molded direct bonded and interconnected stack
US11462419B2 (en) 2018-07-06 2022-10-04 Invensas Bonding Technologies, Inc. Microelectronic assemblies
US12406959B2 (en) 2018-07-26 2025-09-02 Adeia Semiconductor Bonding Technologies Inc. Post CMP processing for hybrid bonding
US20200075533A1 (en) 2018-08-29 2020-03-05 Invensas Bonding Technologies, Inc. Bond enhancement in microelectronics by trapping contaminants and arresting cracks during direct-bonding processes
CN113330557A (zh) 2019-01-14 2021-08-31 伊文萨思粘合技术公司 键合结构
US11296053B2 (en) 2019-06-26 2022-04-05 Invensas Bonding Technologies, Inc. Direct bonded stack structures for increased reliability and improved yield in microelectronics
US12080672B2 (en) 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
US11631647B2 (en) 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element
CN113675083B (zh) * 2021-10-25 2021-12-21 江山季丰电子科技有限公司 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法
CN117402686A (zh) * 2023-09-27 2024-01-16 华阳新兴科技（天津）集团有限公司 一种运载火箭涂装清洗剂及其制备方法

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Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106062621A (zh) * 2014-03-06 2016-10-26 赛智电致变色公司 使用非水性流体从电致变色膜的颗粒去除
JP2017515648A (ja) * 2014-03-06 2017-06-15 セイジ・エレクトロクロミクス，インコーポレイテッド 非水性流体を用いたエレクトロクロミックフィルムからの粒子除去
JP2020520118A (ja) * 2017-05-11 2020-07-02 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 処理された積層ダイ
JP7129427B2 (ja) 2017-05-11 2022-09-01 インヴェンサス ボンディング テクノロジーズ インコーポレイテッド 処理された積層ダイ
JPWO2021182182A1 (OSRAM) * 2020-03-12 2021-09-16
JP2024029021A (ja) * 2020-03-12 2024-03-05 富士フイルム株式会社 処理液、パターン形成方法
JP7731414B2 (ja) 2020-03-12 2025-08-29 富士フイルム株式会社 処理液、パターン形成方法

Also Published As

Publication number Publication date
US20090029274A1 (en) 2009-01-29
CN101779275A (zh) 2010-07-14
EP2179440A4 (en) 2011-03-09
KR20100053574A (ko) 2010-05-20
TW200913046A (en) 2009-03-16
EP2179440A1 (en) 2010-04-28
WO2009014791A1 (en) 2009-01-29

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