JP2010534358A5 - - Google Patents
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- Publication number
- JP2010534358A5 JP2010534358A5 JP2010518247A JP2010518247A JP2010534358A5 JP 2010534358 A5 JP2010534358 A5 JP 2010534358A5 JP 2010518247 A JP2010518247 A JP 2010518247A JP 2010518247 A JP2010518247 A JP 2010518247A JP 2010534358 A5 JP2010534358 A5 JP 2010534358A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- photoresist
- ions
- composition
- ether
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000000758 substrate Substances 0.000 claims 9
- 150000002500 ions Chemical class 0.000 claims 8
- 229920002120 photoresistant polymer Polymers 0.000 claims 6
- 238000000034 method Methods 0.000 claims 5
- 239000000203 mixture Substances 0.000 claims 4
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims 2
- 238000011109 contamination Methods 0.000 claims 2
- 239000006184 cosolvent Substances 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- 239000002904 solvent Substances 0.000 claims 2
- QKAGYSDHEJITFV-UHFFFAOYSA-N 1,1,1,2,2,3,4,5,5,5-decafluoro-3-methoxy-4-(trifluoromethyl)pentane Chemical compound FC(F)(F)C(F)(F)C(F)(OC)C(F)(C(F)(F)F)C(F)(F)F QKAGYSDHEJITFV-UHFFFAOYSA-N 0.000 claims 1
- TZMQCOROQZMJIS-UHFFFAOYSA-N 1,1,1,2,3,3-hexafluoro-4-(1,1,2,3,3,3-hexafluoropropoxy)pentane Chemical compound FC(F)(F)C(F)C(F)(F)C(C)OC(F)(F)C(F)C(F)(F)F TZMQCOROQZMJIS-UHFFFAOYSA-N 0.000 claims 1
- DFUYAWQUODQGFF-UHFFFAOYSA-N 1-ethoxy-1,1,2,2,3,3,4,4,4-nonafluorobutane Chemical compound CCOC(F)(F)C(F)(F)C(F)(F)C(F)(F)F DFUYAWQUODQGFF-UHFFFAOYSA-N 0.000 claims 1
- SQEGLLMNIBLLNQ-UHFFFAOYSA-N 1-ethoxy-1,1,2,3,3,3-hexafluoro-2-(trifluoromethyl)propane Chemical compound CCOC(F)(F)C(F)(C(F)(F)F)C(F)(F)F SQEGLLMNIBLLNQ-UHFFFAOYSA-N 0.000 claims 1
- DJXNLVJQMJNEMN-UHFFFAOYSA-N 2-[difluoro(methoxy)methyl]-1,1,1,2,3,3,3-heptafluoropropane Chemical compound COC(F)(F)C(F)(C(F)(F)F)C(F)(F)F DJXNLVJQMJNEMN-UHFFFAOYSA-N 0.000 claims 1
- JTXMVXSTHSMVQF-UHFFFAOYSA-N 2-acetyloxyethyl acetate Chemical compound CC(=O)OCCOC(C)=O JTXMVXSTHSMVQF-UHFFFAOYSA-N 0.000 claims 1
- ZKNHDJMXIUOHLX-UHFFFAOYSA-N 2-ethoxy-1,1,1-trifluoroethane Chemical compound CCOCC(F)(F)F ZKNHDJMXIUOHLX-UHFFFAOYSA-N 0.000 claims 1
- FNUBKINEQIEODM-UHFFFAOYSA-N 3,3,4,4,5,5,5-heptafluoropentanal Chemical compound FC(F)(F)C(F)(F)C(F)(F)CC=O FNUBKINEQIEODM-UHFFFAOYSA-N 0.000 claims 1
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical compound COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims 1
- HHBBIOLEJRWIGU-UHFFFAOYSA-N 4-ethoxy-1,1,1,2,2,3,3,4,5,6,6,6-dodecafluoro-5-(trifluoromethyl)hexane Chemical compound CCOC(F)(C(F)(C(F)(F)F)C(F)(F)F)C(F)(F)C(F)(F)C(F)(F)F HHBBIOLEJRWIGU-UHFFFAOYSA-N 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 238000004380 ashing Methods 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 claims 1
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/782,766 US20090029274A1 (en) | 2007-07-25 | 2007-07-25 | Method for removing contamination with fluorinated compositions |
| PCT/US2008/062725 WO2009014791A1 (en) | 2007-07-25 | 2008-05-06 | Method for removing contamination with fluorinated compositions |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010534358A JP2010534358A (ja) | 2010-11-04 |
| JP2010534358A5 true JP2010534358A5 (OSRAM) | 2011-06-23 |
Family
ID=40281693
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010518247A Withdrawn JP2010534358A (ja) | 2007-07-25 | 2008-05-06 | フッ素化組成物を用いて汚染を除去する方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20090029274A1 (OSRAM) |
| EP (1) | EP2179440A4 (OSRAM) |
| JP (1) | JP2010534358A (OSRAM) |
| KR (1) | KR20100053574A (OSRAM) |
| CN (1) | CN101779275A (OSRAM) |
| TW (1) | TW200913046A (OSRAM) |
| WO (1) | WO2009014791A1 (OSRAM) |
Families Citing this family (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101126268B1 (ko) * | 2010-09-30 | 2012-03-20 | 주식회사 삼한 씨원 | 표면오염 억제 기능이 있는 황토벽돌 제조방법 |
| US20120286192A1 (en) | 2011-05-12 | 2012-11-15 | 3M Innovative Properties Company | Azeotrope-like compositions with 1,1,1,3,3-pentafluorobutane |
| TW201333626A (zh) | 2011-11-14 | 2013-08-16 | Orthogonal Inc | 用於圖案化使用非氟化光阻之有機材料的方法 |
| US20140322656A1 (en) * | 2013-04-24 | 2014-10-30 | Orthogonal, Inc. | Method of patterning a device |
| US10767143B2 (en) * | 2014-03-06 | 2020-09-08 | Sage Electrochromics, Inc. | Particle removal from electrochromic films using non-aqueous fluids |
| KR102462889B1 (ko) * | 2014-09-11 | 2022-11-02 | 쓰리엠 이노베이티브 프로퍼티즈 컴파니 | 플루오르화 계면활성제를 함유하는 조성물 |
| CN104387831B (zh) * | 2014-11-27 | 2017-05-10 | 孙更生 | 一种基于聚硅氧烷的注射针涂层用溶剂组合物 |
| CN105199859B (zh) * | 2015-09-17 | 2018-03-27 | 惠州学院 | 一种半导体表面清洗剂及其制备方法 |
| CN105238567B (zh) * | 2015-10-10 | 2017-11-17 | 泉州市福达科技咨询有限公司 | 一种环保型含氟清洗剂及其制备方法 |
| US9978601B2 (en) * | 2015-10-20 | 2018-05-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Methods for pre-deposition treatment of a work-function metal layer |
| US9799745B2 (en) | 2015-10-20 | 2017-10-24 | Taiwan Semiconductor Manufacturing Co., Ltd. | Atomic layer deposition methods and structures thereof |
| US9972694B2 (en) * | 2015-10-20 | 2018-05-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Atomic layer deposition methods and structures thereof |
| US10204893B2 (en) | 2016-05-19 | 2019-02-12 | Invensas Bonding Technologies, Inc. | Stacked dies and methods for forming bonded structures |
| US20180182665A1 (en) | 2016-12-28 | 2018-06-28 | Invensas Bonding Technologies, Inc. | Processed Substrate |
| US10879212B2 (en) | 2017-05-11 | 2020-12-29 | Invensas Bonding Technologies, Inc. | Processed stacked dies |
| CN108301011B (zh) * | 2017-12-25 | 2020-08-11 | 博罗县东明化工有限公司 | 压铸铝合金清洗剂及其制备方法 |
| KR102693837B1 (ko) * | 2018-04-27 | 2024-08-08 | 니폰 제온 가부시키가이샤 | Euv 리소그래피용 포지티브형 레지스트 조성물 및 레지스트 패턴 형성 방법 |
| US11276676B2 (en) | 2018-05-15 | 2022-03-15 | Invensas Bonding Technologies, Inc. | Stacked devices and methods of fabrication |
| WO2020010265A1 (en) | 2018-07-06 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Microelectronic assemblies |
| WO2020010136A1 (en) | 2018-07-06 | 2020-01-09 | Invensas Bonding Technologies, Inc. | Molded direct bonded and interconnected stack |
| US12406959B2 (en) | 2018-07-26 | 2025-09-02 | Adeia Semiconductor Bonding Technologies Inc. | Post CMP processing for hybrid bonding |
| US20200075533A1 (en) | 2018-08-29 | 2020-03-05 | Invensas Bonding Technologies, Inc. | Bond enhancement in microelectronics by trapping contaminants and arresting cracks during direct-bonding processes |
| WO2020150159A1 (en) | 2019-01-14 | 2020-07-23 | Invensas Bonding Technologies, Inc. | Bonded structures |
| US11296053B2 (en) | 2019-06-26 | 2022-04-05 | Invensas Bonding Technologies, Inc. | Direct bonded stack structures for increased reliability and improved yield in microelectronics |
| US12080672B2 (en) | 2019-09-26 | 2024-09-03 | Adeia Semiconductor Bonding Technologies Inc. | Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive |
| WO2021182182A1 (ja) * | 2020-03-12 | 2021-09-16 | 富士フイルム株式会社 | 処理液、パターン形成方法 |
| US11631647B2 (en) | 2020-06-30 | 2023-04-18 | Adeia Semiconductor Bonding Technologies Inc. | Integrated device packages with integrated device die and dummy element |
| CN113675083B (zh) * | 2021-10-25 | 2021-12-21 | 江山季丰电子科技有限公司 | 暴露绝缘体上硅器件有源区的方法、应用和失效分析方法 |
| CN117402686A (zh) * | 2023-09-27 | 2024-01-16 | 华阳新兴科技（天津）集团有限公司 | 一种运载火箭涂装清洗剂及其制备方法 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5925611A (en) * | 1995-01-20 | 1999-07-20 | Minnesota Mining And Manufacturing Company | Cleaning process and composition |
| US5897809A (en) * | 1996-05-30 | 1999-04-27 | E. I. Du Pont De Nemours And Company | Decafluoropentane compositions |
| FR2759090B1 (fr) * | 1997-02-04 | 1999-03-05 | Atochem Elf Sa | Compositions de nettoyage ou de sechage a base de 1,1,1,2,3,4,4,5,5,5-decafluoropentane |
| US5861064A (en) * | 1997-03-17 | 1999-01-19 | Fsi Int Inc | Process for enhanced photoresist removal in conjunction with various methods and chemistries |
| US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
| SG77710A1 (en) * | 1998-09-09 | 2001-01-16 | Tokuyama Corp | Photoresist ashing residue cleaning agent |
| JP2001100436A (ja) * | 1999-09-28 | 2001-04-13 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| US6755871B2 (en) * | 1999-10-15 | 2004-06-29 | R.R. Street & Co. Inc. | Cleaning system utilizing an organic cleaning solvent and a pressurized fluid solvent |
| JP2001196373A (ja) * | 2000-01-13 | 2001-07-19 | Mitsubishi Electric Corp | 半導体装置の製造方法及び半導体装置 |
| JP2001284581A (ja) * | 2000-03-31 | 2001-10-12 | Toshiba Corp | 半導体装置とその製造方法 |
| US6310018B1 (en) * | 2000-03-31 | 2001-10-30 | 3M Innovative Properties Company | Fluorinated solvent compositions containing hydrogen fluoride |
| US6831048B2 (en) * | 2000-04-26 | 2004-12-14 | Daikin Industries, Ltd. | Detergent composition |
| KR100764888B1 (ko) * | 2000-07-10 | 2007-10-09 | 이케이씨 테크놀로지, 인코포레이티드 | 반도체 장치용의 유기 및 플라즈마 식각된 잔사의 세척을위한 조성물 |
| WO2002019406A1 (en) * | 2000-09-01 | 2002-03-07 | Tokuyama Corporation | Cleaning solution for removing residue |
| JP2003122028A (ja) * | 2001-10-17 | 2003-04-25 | Mitsubishi Gas Chem Co Inc | レジスト剥離液組成物 |
| TWI315301B (en) * | 2002-03-06 | 2009-10-01 | Asahi Glass Co Ltd | Solvent composition |
| US6699829B2 (en) * | 2002-06-07 | 2004-03-02 | Kyzen Corporation | Cleaning compositions containing dichloroethylene and six carbon alkoxy substituted perfluoro compounds |
| US20040011386A1 (en) * | 2002-07-17 | 2004-01-22 | Scp Global Technologies Inc. | Composition and method for removing photoresist and/or resist residue using supercritical fluids |
| US20040058551A1 (en) * | 2002-09-23 | 2004-03-25 | Meagley Robert P. | Fluorous cleaning solution for lithographic processing |
| US6989358B2 (en) * | 2002-10-31 | 2006-01-24 | Advanced Technology Materials, Inc. | Supercritical carbon dioxide/chemical formulation for removal of photoresists |
| KR100511590B1 (ko) * | 2003-01-30 | 2005-09-02 | 동부아남반도체 주식회사 | 반도체 소자 및 그의 제조 방법 |
| US7071154B2 (en) * | 2003-12-18 | 2006-07-04 | 3M Innovative Properties Company | Azeotrope-like compositions and their use |
| US20050227482A1 (en) * | 2004-03-24 | 2005-10-13 | Korzenski Michael B | Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers |
| US7632756B2 (en) * | 2004-08-26 | 2009-12-15 | Applied Materials, Inc. | Semiconductor processing using energized hydrogen gas and in combination with wet cleaning |
| EP1875493A2 (en) * | 2005-04-04 | 2008-01-09 | MALLINCKRODT BAKER, Inc. | Composition for cleaning ion implanted photoresist in front end of line applications |
| JP2008537343A (ja) * | 2005-04-15 | 2008-09-11 | アドバンスド テクノロジー マテリアルズ，インコーポレイテッド | マイクロエレクトロニクスデバイスからイオン注入フォトレジスト層をクリーニングするための配合物 |
| US7674755B2 (en) * | 2005-12-22 | 2010-03-09 | Air Products And Chemicals, Inc. | Formulation for removal of photoresist, etch residue and BARC |
-
2007
- 2007-07-25 US US11/782,766 patent/US20090029274A1/en not_active Abandoned
-
2008
- 2008-05-06 EP EP08755076A patent/EP2179440A4/en not_active Withdrawn
- 2008-05-06 KR KR1020107004004A patent/KR20100053574A/ko not_active Ceased
- 2008-05-06 WO PCT/US2008/062725 patent/WO2009014791A1/en not_active Ceased
- 2008-05-06 CN CN200880100350A patent/CN101779275A/zh active Pending
- 2008-05-06 JP JP2010518247A patent/JP2010534358A/ja not_active Withdrawn
- 2008-05-22 TW TW097118927A patent/TW200913046A/zh unknown
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