JP2010532928A5 - - Google Patents

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Publication number
JP2010532928A5
JP2010532928A5 JP2010515370A JP2010515370A JP2010532928A5 JP 2010532928 A5 JP2010532928 A5 JP 2010532928A5 JP 2010515370 A JP2010515370 A JP 2010515370A JP 2010515370 A JP2010515370 A JP 2010515370A JP 2010532928 A5 JP2010532928 A5 JP 2010532928A5
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JP
Japan
Prior art keywords
substrate
region
removal
wafer
zone
Prior art date
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Application number
JP2010515370A
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English (en)
Japanese (ja)
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JP2010532928A (ja
JP5099859B2 (ja
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Publication date
Priority claimed from EP07290869A external-priority patent/EP2015354A1/en
Application filed filed Critical
Priority claimed from PCT/EP2008/005107 external-priority patent/WO2009007003A1/en
Publication of JP2010532928A publication Critical patent/JP2010532928A/ja
Publication of JP2010532928A5 publication Critical patent/JP2010532928A5/ja
Application granted granted Critical
Publication of JP5099859B2 publication Critical patent/JP5099859B2/ja
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JP2010515370A 2007-07-11 2008-06-24 基板の再利用方法、積層化ウェーハの作製方法、及び適切な再利用を施したドナー基板 Active JP5099859B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
EP07290869A EP2015354A1 (en) 2007-07-11 2007-07-11 Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate
EP07290869.2 2007-07-11
EP08290490A EP2037495B1 (en) 2007-07-11 2008-05-28 Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate
EP08290490.5 2008-05-28
PCT/EP2008/005107 WO2009007003A1 (en) 2007-07-11 2008-06-24 Method for recycling a substrate, laminated water fabricating method and suitable recycled donor substrate

Publications (3)

Publication Number Publication Date
JP2010532928A JP2010532928A (ja) 2010-10-14
JP2010532928A5 true JP2010532928A5 (enExample) 2012-05-31
JP5099859B2 JP5099859B2 (ja) 2012-12-19

Family

ID=38896813

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010515370A Active JP5099859B2 (ja) 2007-07-11 2008-06-24 基板の再利用方法、積層化ウェーハの作製方法、及び適切な再利用を施したドナー基板

Country Status (7)

Country Link
US (1) US8324075B2 (enExample)
EP (2) EP2015354A1 (enExample)
JP (1) JP5099859B2 (enExample)
KR (1) KR101487371B1 (enExample)
CN (1) CN101689530B (enExample)
AT (1) ATE504083T1 (enExample)
DE (1) DE602008005817D1 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8871109B2 (en) 2009-04-28 2014-10-28 Gtat Corporation Method for preparing a donor surface for reuse
FR2999801B1 (fr) * 2012-12-14 2014-12-26 Soitec Silicon On Insulator Procede de fabrication d'une structure
US20140268273A1 (en) * 2013-03-15 2014-09-18 Pixtronix, Inc. Integrated elevated aperture layer and display apparatus
US8946054B2 (en) 2013-04-19 2015-02-03 International Business Machines Corporation Crack control for substrate separation
WO2015084868A1 (en) 2013-12-02 2015-06-11 The Regents Of The University Of Michigan Fabrication of thin-film electronic devices with non-destructive wafer reuse
CN104119815B (zh) * 2014-08-04 2015-08-19 博洛尼家居用品(北京)股份有限公司 一种双面胶带
FR3048548B1 (fr) * 2016-03-02 2018-03-02 Soitec Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant
US20180033609A1 (en) * 2016-07-28 2018-02-01 QMAT, Inc. Removal of non-cleaved/non-transferred material from donor substrate
FR3063176A1 (fr) * 2017-02-17 2018-08-24 Soitec Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique
FR3074608B1 (fr) 2017-12-05 2019-12-06 Soitec Procede de preparation d'un residu de substrat donneur, substrat obtenu a l'issu de ce procede, et utilisation d'un tel susbtrat
KR102287395B1 (ko) * 2019-02-28 2021-08-06 김용석 플렉시블 전자 소자의 제조방법 및 그로부터 제조된 플렉시블 전자 소자
KR102523640B1 (ko) 2022-01-28 2023-04-19 주식회사 이노와이어리스 이동통신 단말 시험용 실드 박스

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5668045A (en) * 1994-11-30 1997-09-16 Sibond, L.L.C. Process for stripping outer edge of BESOI wafers
JP3932369B2 (ja) 1998-04-09 2007-06-20 信越半導体株式会社 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ
JP3472197B2 (ja) * 1999-06-08 2003-12-02 キヤノン株式会社 半導体基材及び太陽電池の製造方法
US6664169B1 (en) * 1999-06-08 2003-12-16 Canon Kabushiki Kaisha Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus
EP1158581B1 (en) * 1999-10-14 2016-04-27 Shin-Etsu Handotai Co., Ltd. Method for producing soi wafer
JP3943782B2 (ja) * 1999-11-29 2007-07-11 信越半導体株式会社 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ
TWI233154B (en) 2002-12-06 2005-05-21 Soitec Silicon On Insulator Method for recycling a substrate
FR2892228B1 (fr) 2005-10-18 2008-01-25 Soitec Silicon On Insulator Procede de recyclage d'une plaquette donneuse epitaxiee
FR2852445B1 (fr) * 2003-03-14 2005-05-20 Soitec Silicon On Insulator Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique
US7402520B2 (en) 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
FR2888400B1 (fr) * 2005-07-08 2007-10-19 Soitec Silicon On Insulator Procede de prelevement de couche
EP1777735A3 (fr) * 2005-10-18 2009-08-19 S.O.I.Tec Silicon on Insulator Technologies Procédé de recyclage d'une plaquette donneuse épitaxiée
JP4715470B2 (ja) * 2005-11-28 2011-07-06 株式会社Sumco 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ

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