ATE504083T1 - Verfahren zum recycling eines substrats, herstellungsverfahren für einen beschichteten wafer und dazu passendes recyceltes donorsubstrat - Google Patents
Verfahren zum recycling eines substrats, herstellungsverfahren für einen beschichteten wafer und dazu passendes recyceltes donorsubstratInfo
- Publication number
- ATE504083T1 ATE504083T1 AT08290490T AT08290490T ATE504083T1 AT E504083 T1 ATE504083 T1 AT E504083T1 AT 08290490 T AT08290490 T AT 08290490T AT 08290490 T AT08290490 T AT 08290490T AT E504083 T1 ATE504083 T1 AT E504083T1
- Authority
- AT
- Austria
- Prior art keywords
- substrate
- region
- recycling
- recycled
- matching
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 10
- 238000000034 method Methods 0.000 title abstract 5
- 238000004064 recycling Methods 0.000 title abstract 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 2
- 239000000356 contaminant Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24479—Structurally defined web or sheet [e.g., overall dimension, etc.] including variation in thickness
- Y10T428/24488—Differential nonuniformity at margin
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Recrystallisation Techniques (AREA)
- Transition And Organic Metals Composition Catalysts For Addition Polymerization (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP07290869A EP2015354A1 (en) | 2007-07-11 | 2007-07-11 | Method for recycling a substrate, laminated wafer fabricating method and suitable recycled donor substrate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ATE504083T1 true ATE504083T1 (de) | 2011-04-15 |
Family
ID=38896813
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| AT08290490T ATE504083T1 (de) | 2007-07-11 | 2008-05-28 | Verfahren zum recycling eines substrats, herstellungsverfahren für einen beschichteten wafer und dazu passendes recyceltes donorsubstrat |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US8324075B2 (enExample) |
| EP (2) | EP2015354A1 (enExample) |
| JP (1) | JP5099859B2 (enExample) |
| KR (1) | KR101487371B1 (enExample) |
| CN (1) | CN101689530B (enExample) |
| AT (1) | ATE504083T1 (enExample) |
| DE (1) | DE602008005817D1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8871109B2 (en) | 2009-04-28 | 2014-10-28 | Gtat Corporation | Method for preparing a donor surface for reuse |
| FR2999801B1 (fr) * | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
| US20140268273A1 (en) * | 2013-03-15 | 2014-09-18 | Pixtronix, Inc. | Integrated elevated aperture layer and display apparatus |
| US8946054B2 (en) | 2013-04-19 | 2015-02-03 | International Business Machines Corporation | Crack control for substrate separation |
| WO2015084868A1 (en) | 2013-12-02 | 2015-06-11 | The Regents Of The University Of Michigan | Fabrication of thin-film electronic devices with non-destructive wafer reuse |
| CN104119815B (zh) * | 2014-08-04 | 2015-08-19 | 博洛尼家居用品(北京)股份有限公司 | 一种双面胶带 |
| FR3048548B1 (fr) * | 2016-03-02 | 2018-03-02 | Soitec | Procede de determination d'une energie convenable d'implantation dans un substrat donneur et procede de fabrication d'une structure de type semi-conducteur sur isolant |
| US20180033609A1 (en) * | 2016-07-28 | 2018-02-01 | QMAT, Inc. | Removal of non-cleaved/non-transferred material from donor substrate |
| FR3063176A1 (fr) * | 2017-02-17 | 2018-08-24 | Soitec | Masquage d'une zone au bord d'un substrat donneur lors d'une etape d'implantation ionique |
| FR3074608B1 (fr) | 2017-12-05 | 2019-12-06 | Soitec | Procede de preparation d'un residu de substrat donneur, substrat obtenu a l'issu de ce procede, et utilisation d'un tel susbtrat |
| KR102287395B1 (ko) * | 2019-02-28 | 2021-08-06 | 김용석 | 플렉시블 전자 소자의 제조방법 및 그로부터 제조된 플렉시블 전자 소자 |
| KR102523640B1 (ko) | 2022-01-28 | 2023-04-19 | 주식회사 이노와이어리스 | 이동통신 단말 시험용 실드 박스 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5668045A (en) * | 1994-11-30 | 1997-09-16 | Sibond, L.L.C. | Process for stripping outer edge of BESOI wafers |
| JP3932369B2 (ja) | 1998-04-09 | 2007-06-20 | 信越半導体株式会社 | 剥離ウエーハを再利用する方法および再利用に供されるシリコンウエーハ |
| JP3472197B2 (ja) * | 1999-06-08 | 2003-12-02 | キヤノン株式会社 | 半導体基材及び太陽電池の製造方法 |
| US6664169B1 (en) * | 1999-06-08 | 2003-12-16 | Canon Kabushiki Kaisha | Process for producing semiconductor member, process for producing solar cell, and anodizing apparatus |
| EP1158581B1 (en) * | 1999-10-14 | 2016-04-27 | Shin-Etsu Handotai Co., Ltd. | Method for producing soi wafer |
| JP3943782B2 (ja) * | 1999-11-29 | 2007-07-11 | 信越半導体株式会社 | 剥離ウエーハの再生処理方法及び再生処理された剥離ウエーハ |
| TWI233154B (en) | 2002-12-06 | 2005-05-21 | Soitec Silicon On Insulator | Method for recycling a substrate |
| FR2892228B1 (fr) | 2005-10-18 | 2008-01-25 | Soitec Silicon On Insulator | Procede de recyclage d'une plaquette donneuse epitaxiee |
| FR2852445B1 (fr) * | 2003-03-14 | 2005-05-20 | Soitec Silicon On Insulator | Procede de realisation de substrats ou composants sur substrats avec transfert de couche utile, pour la microelectronique, l'optoelectronique ou l'optique |
| US7402520B2 (en) | 2004-11-26 | 2008-07-22 | Applied Materials, Inc. | Edge removal of silicon-on-insulator transfer wafer |
| FR2888400B1 (fr) * | 2005-07-08 | 2007-10-19 | Soitec Silicon On Insulator | Procede de prelevement de couche |
| EP1777735A3 (fr) * | 2005-10-18 | 2009-08-19 | S.O.I.Tec Silicon on Insulator Technologies | Procédé de recyclage d'une plaquette donneuse épitaxiée |
| JP4715470B2 (ja) * | 2005-11-28 | 2011-07-06 | 株式会社Sumco | 剥離ウェーハの再生加工方法及びこの方法により再生加工された剥離ウェーハ |
-
2007
- 2007-07-11 EP EP07290869A patent/EP2015354A1/en not_active Withdrawn
-
2008
- 2008-05-28 EP EP08290490A patent/EP2037495B1/en active Active
- 2008-05-28 DE DE602008005817T patent/DE602008005817D1/de active Active
- 2008-05-28 AT AT08290490T patent/ATE504083T1/de not_active IP Right Cessation
- 2008-06-24 US US12/663,254 patent/US8324075B2/en active Active
- 2008-06-24 JP JP2010515370A patent/JP5099859B2/ja active Active
- 2008-06-24 KR KR1020097024059A patent/KR101487371B1/ko active Active
- 2008-06-24 CN CN2008800213829A patent/CN101689530B/zh active Active
Also Published As
| Publication number | Publication date |
|---|---|
| CN101689530B (zh) | 2013-05-22 |
| KR101487371B1 (ko) | 2015-01-29 |
| JP2010532928A (ja) | 2010-10-14 |
| CN101689530A (zh) | 2010-03-31 |
| EP2037495B1 (en) | 2011-03-30 |
| US20100181653A1 (en) | 2010-07-22 |
| EP2015354A1 (en) | 2009-01-14 |
| US8324075B2 (en) | 2012-12-04 |
| JP5099859B2 (ja) | 2012-12-19 |
| DE602008005817D1 (de) | 2011-05-12 |
| KR20100044142A (ko) | 2010-04-29 |
| EP2037495A1 (en) | 2009-03-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| RER | Ceased as to paragraph 5 lit. 3 law introducing patent treaties |