JP2010532549A - 強化された電荷中和及びプロセス制御を具えたプラズマ処理 - Google Patents
強化された電荷中和及びプロセス制御を具えたプラズマ処理 Download PDFInfo
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Abstract
Description
本発明の教えを種々の実施例及び用例と関連して記載したが、本発明の教えはこれらの実施例に限定されるものではない。それどころか、本発明の教えは、当業者によく理解されるように、本発明の精神及び範囲から離れることなく成し得る種々の代替例、変更例及び等価例も含むものである。
Claims (25)
- (a)プラズマ処理のために基板を支持するプラテンと、
(b)第1の電力レベルを有する第1の期間及び第2の電力レベルを有する第2の期間を有する複数レベルのRF電力波形を出力端子に発生するRF電源と、
(c)前記RF電源の出力端子に電気的に接続された電気入力端子を有し、少なくとも、前記第1の期間の間前記第1のRF電力レベルで第1のRFプラズマを発生し、前記第2の期間の間前記第2のRF電力レベルで第2のRFプラズマを発生するRFプラズマ源と、
(d)前記プラテンに電気的に接続された出力端子を有し、プラズマ処理のために前記プラズマ中のイオンを基板に引き付けるのに十分なバイアス電圧波形を発生するバイアス電圧源と、
を備えるプラズマ処理装置。 - 前記プラズマ処理装置はプラズマエッチング装置を含む、請求項1記載のプラズマ処理装置。
- 前記プラズマ処理装置はプラズマ堆積装置を含む、請求項1記載のプラズマ処理装置。
- 前記プラズマ処理装置はプラズマドーピング装置を含む、請求項1記載のプラズマ処理装置。
- 前記第1及び第2の電力レベルの少なくとも一つは前記第1及び第2の期間の対応するそれぞれの期間中ほぼ一定である、請求項1記載のプラズマ処理装置。
- 前記第2のRF電力レベルが、前記第2の期間におけるプラズマが前記第2の期間中に基板に蓄積する電荷を少なくとも部分的に中和するのに十分な電子を有するように選択され、よって基板への帯電効果が低減される、請求項1記載のプラズマ処理装置。
- 前記RF電力波形と前記バイアス電圧波形の相対的タイミングが、基板に蓄積する電荷を少なくとも部分的に中和するように選択される、請求項1記載のプラズマ処理装置。
- 前記バイアス電圧波形が前記複数レベルのRF電力波形に実質的に同期化される、請求項1記載のプラズマ処理装置。
- (a)プラズマ処理のために基板を支持するプラテンと、
(b)第1の電力レベルを有する第1の期間及び第2の電力レベルを有する第2の期間を有する複数レベルのRF電力波形を出力端子に発生するRF電源と、
(c)前記RF電源の出力端子に電気的に接続された電気入力端子を有し、少なくとも、前記第1の期間の間前記第1のRF電力レベルで第1のRFプラズマを発生し、前記第2の期間の間前記第2のRF電力レベルで第2のRFプラズマを発生するRFプラズマ源と、
(d)前記プラテンに電気的に接続された出力端子を有し、前記RF電力波形に同期化され、第1の期間の間プラズマ中のイオンをプラズマ処理のために基板に引き付けるのに十分な電位を有する第1のバイアス電圧及び第2の期間の間第2のバイアス電圧を少なくとも有するバイアス電圧波形を発生するバイアス電圧源と、
を備えるプラズマ処理装置。 - 前記第1及び第2のRF電力レベルの少なくとも一つが前記第1及び第2の期間の対応するそれぞれの期間中ほぼ一定である、請求項9記載のプラズマ処理装置。
- 前記第1及び第2のRF電力レベル、前記第1及び第2のバイアス電圧及び前記第1及び第2の期間の少なくとも一つが、所定のプロセス速度及び所定のプロセスプロファイルの少なくとも一つを達成するように選択される、請求項9記載のプラズマ処理装置。
- 前記第2のバイアス電圧が基板に蓄積する電荷の中和を助ける電位を有する、請求項9記載のプラズマ処理装置。
- 前記第2の電力レベルが、前記第2の期間におけるプラズマが前記第2の期間中に基板に蓄積する電荷を少なくとも部分的に中和するのに十分な電子を有するように選択され、よって基板への帯電効果が低減される、請求項9記載のプラズマ処理装置。
- 前記第2のバイアス電圧がほぼ接地電位にある、請求項9記載のプラズマ処理装置。
- 前記バイアス電圧波形が前記複数レベルのRF電力波形に同期化される、請求項9記載のプラズマ処理装置。
- 前記RF電力波形内のパルスが前記バイアス電圧波形内のパルスと時間的にほぼ整列する、請求項15記載のプラズマ処理装置。
- 前記RF電力波形内のパルスが前記バイアス電圧波形内のパルスに対して時間的に変位される、請求項15記載のプラズマ処理装置。
- 前記RF電力波形と前記バイアス電圧波形との相対的タイミングが基板に蓄積する電荷を少なくとも部分的に中和するように選択される、請求項9記載のプラズマ処理装置。
- 前記RF電力波形の前記第1の期間内の周波数が前記RF電力波形の前記第2の期間内の周波数と相違する、請求項9記載のプラズマ処理装置。
- (a)プラズマ処理のために基板を支持するプラテンと、
(b)第1の期間の間第1の電力レベルを有し、第2の期間の間第2の電力レベルを有し、第3の期間の間第3の電力レベルを有する複数振幅のRF電力波形を出力端子に発生するRF電源と、
(c)前記パルス電源の出力端子に電気的に接続された電気入力端子を有し、少なくとも、前記第1の期間の間前記第1のRF電力レベルで第1のRFプラズマを発生し、前記第2の期間の間前記第2のRF電力レベルで第2のRFプラズマを発生し、前記第3の期間の間前記プラズマをほぼ消失するRFプラズマ源と、
(d)前記プラテンに電気的に接続された出力端子を有し、第1の期間の間第1の電圧及び第2の期間の間第2の電圧を有するバイアス電圧波形を発生し、前記第1の電圧がプラズマ内のイオンをプラズマ処理のために基板に引き付けるのに十分である、バイアス電圧源と、
を備えるプラズマ処理装置。 - 前記バイアス電圧波形が前記複数振幅のRF電力波形にほぼ同期化される、請求項20記載のプラズマ処理装置。
- 前記第2のRF電力レベルが、前記第2の期間中に蓄積する電荷を少なくとも部分的に中和するのに十分な電子を有するプラズマを維持するに十分であり、よって基板への帯電効果が低減される、請求項20記載のプラズマ処理装置。
- 前記RF電力波形と前記バイアス電圧波形との相対的タイミングが基板に蓄積する電荷を少なくとも部分的に中和するように選択される、請求項20記載のプラズマ処理装置。
- (a)プラズマ処理のために基板を支持するプラテンと、
(b)少なくとも第1の期間及び第2の期間を有するRF電力波形を出力端子に発生するRF電源と、
(c)前記RF電源の出力端子に電気的に接続された電気入力端子を有し、第1の期間の間第1のRFプラズマを発生し、前記第2の期間の間第2のRFプラズマを発生するRFプラズマ源と、
(d)前記プラテンに電気的に接続された出力端子を有し、前記RF電力波形に同期化され、第1の期間の間プラズマ中のイオンをプラズマ処理のために基板に引き付けるのに十分な第1のバイアス電圧及び第2の期間の間第2のバイアス電圧を有するバイアス電圧源と、
を備えるプラズマ処理装置。 - (a)プラズマ処理期間の間第1の電力レベルを有し、電荷中和期間の間第2の電力レベルを有するパルスプラズマを発生する手段と、
(b)前記プラズマ処理期間の間プラズマからイオンを抽出する第1の電圧を有し、第2の期間の間プラズマ中の電子がプラズマ処理中に基板に蓄積する電荷を少なくとも部分的に中和することができる第2の電圧を有するバイアス電圧波形を発生する手段と、
を備えるプラズマ処理装置。
Applications Claiming Priority (5)
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US11/771,190 US20090004836A1 (en) | 2007-06-29 | 2007-06-29 | Plasma doping with enhanced charge neutralization |
US11/771,190 | 2007-06-29 | ||
US12/098,781 | 2008-04-07 | ||
US12/098,781 US20090001890A1 (en) | 2007-06-29 | 2008-04-07 | Apparatus for Plasma Processing a Substrate and a Method Thereof |
PCT/US2008/066703 WO2009005991A1 (en) | 2007-06-29 | 2008-06-12 | Plasma processing with enhanced charge neutralization and process control |
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KR (1) | KR101465542B1 (ja) |
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Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2011198983A (ja) * | 2010-03-19 | 2011-10-06 | Panasonic Corp | プラズマドーピング方法 |
JP2012104382A (ja) * | 2010-11-10 | 2012-05-31 | Tokyo Electron Ltd | プラズマ処理装置及びプラズマ処理方法並びにプラズマ処理のバイアス電圧決定方法 |
JP2012182181A (ja) * | 2011-02-28 | 2012-09-20 | Mitsui Eng & Shipbuild Co Ltd | 原子層堆積装置及び原子層堆積方法 |
JP2013171840A (ja) * | 2012-02-22 | 2013-09-02 | Lam Research Corporation | 多周波数rfパルス出力のための、周波数改善インピーダンス依存電力制御 |
JP2013179047A (ja) * | 2012-02-22 | 2013-09-09 | Lam Research Corporation | インピーダンスに基づいた電力および周波数の調整 |
JP2013191554A (ja) * | 2012-02-22 | 2013-09-26 | Lam Research Corporation | 状態に基づいた電力および周波数の調整 |
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JP5745843B2 (ja) | 2015-07-08 |
TWI460761B (zh) | 2014-11-11 |
CN101689498B (zh) | 2011-09-14 |
US8926850B2 (en) | 2015-01-06 |
TW200912990A (en) | 2009-03-16 |
KR20100028104A (ko) | 2010-03-11 |
US20130092529A1 (en) | 2013-04-18 |
KR101465542B1 (ko) | 2014-11-26 |
TW200908099A (en) | 2009-02-16 |
TWI443715B (zh) | 2014-07-01 |
US20090001890A1 (en) | 2009-01-01 |
US20090004836A1 (en) | 2009-01-01 |
US20090000946A1 (en) | 2009-01-01 |
WO2009005991A1 (en) | 2009-01-08 |
CN101689498A (zh) | 2010-03-31 |
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