JP2022539385A - ナノ秒パルサのrf絶縁 - Google Patents
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- H01J37/32082—Radio frequency generated discharge
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
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- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
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Abstract
Description
幾つかの実施形態では、ナノ秒パルサバイアス発生器115は、図3と関連して示される。
ナノ秒パルサバイアス発生器115はフィルタ145と結合されている。この例では、フィルタ145はローパスフィルタを含む。このローパスフィルタは、ローパスキャパシタ720及びローパスインダクタ715を含んでよい。ローパスインダクタ175はナノ秒パルサバイアス発生器115と直列に結合されてよく、ローパスキャパシタ720はナノ秒パルサバイアス発生器115と接地とに結合されてよい。
fresonant=1/(2π√((L5)(C2)))=一定
幾つかの実施形態では、抵抗R1は、直列及び/又は並列に並んだ複数の抵抗を含んでよい。キャパシタC11は、抵抗R1の浮遊キャパシタンスを表してよく、これは、直列及び/又は並列の抵抗の並びのキャパシタンスを含む。浮遊キャパシタンスC11のキャパシタンスは、例えば、500pF、250pF、100pF、50pF、10pF、1pF等より小さくてよい。浮遊キャパシタンスC11のキャパシタンスは、例えば、負荷キャパシタンスより小さい場合があり、例えば、C7、C8、及び/又はC9のキャパシタンスより小さくてよい。
Claims (20)
- プラズマチャンバと、
前記プラズマチャンバに入るRFバーストを、2MHzより高いRF周波数で駆動するRFドライバと、
前記プラズマチャンバに入るパルスを、前記RF周波数より低いパルス繰り返し周波数と、2kVより高いピーク電圧とで駆動するナノ秒パルサと、
前記RFドライバと前記プラズマチャンバとの間に配置された第1のフィルタと、
前記ナノ秒パルサと前記プラズマチャンバとの間に配置された第2のフィルタと、
を含むプラズマシステム。 - 前記パルス繰り返し周波数は10kHzより高い、請求項1に記載のプラズマシステム。
- 第1のフィルタは、前記RFドライバ及び前記プラズマチャンバと直列であるキャパシタを含み、前記キャパシタは、キャパシタンスが約500pHより小さい、請求項1に記載のプラズマシステム。
- 第1のフィルタは、前記RFドライバの出力と接地とに結合されたインダクタを含む、請求項1に記載のプラズマシステム。
- 前記第2のフィルタは、前記ナノ秒パルサ及び前記プラズマチャンバと直列であるインダクタを含み、前記インダクタは、インダクタンスが約50μHより小さい、請求項1に記載のプラズマシステム。
- 前記第2のフィルタは、前記ナノ秒パルサの出力と接地とに結合されたキャパシタを含む、請求項1に記載のプラズマシステム。
- 前記第1のフィルタはハイパスフィルタを含む、請求項1に記載のプラズマシステム。
- 前記第2のフィルタはローパスフィルタを含む、請求項1に記載のプラズマシステム。
- 前記RFドライバはマッチングネットワークを含まない、請求項1に記載のプラズマシステム。
- 前記プラズマチャンバは、前記RFドライバと電気的に結合されたアンテナを含む、請求項1に記載のプラズマシステム。
- 前記プラズマチャンバは、前記RFドライバと電気的に結合されたカソードを含む、請求項1に記載のプラズマシステム。
- 前記プラズマチャンバは、前記ナノ秒パルサと電気的に結合されたカソードを含む、請求項1に記載のプラズマシステム。
- アンテナ及びカソードを含むプラズマチャンバと、
前記アンテナと電気的に結合されたRFドライバであって、前記RFドライバは、約2MHzより高いRF周波数で前記プラズマチャンバ内にRFバーストを発生させる、前記RFドライバと、
前記カソードと電気的に結合されたナノ秒パルサであって、前記ナノ秒パルサは、前記RF周波数より低いパルス繰り返し周波数と、2kVより高い電圧とで前記プラズマチャンバ内にパルスを発生させる、前記ナノ秒パルサと、
前記RFドライバと前記アンテナとの間に配置されたキャパシタと、
前記ナノ秒パルサと前記カソードとの間に配置されたインダクタと、
を含むプラズマシステム。 - 前記キャパシタはキャパシタンスが約100pFより小さい、請求項13に記載のプラズマシステム。
- 前記インダクタはインダクタンスが約10nHより小さい、請求項13に記載のプラズマシステム。
- 前記パルス繰り返し周波数は10kHzより高い、請求項13に記載のプラズマシステム。
- カソードを含むプラズマチャンバと、
前記カソードと電気的に結合されたRFドライバであって、前記RFドライバは、約2MHzより高いRF周波数で前記プラズマチャンバ内にRFバーストを発生させる、前記RFドライバと、
前記カソードと電気的に結合されたナノ秒パルサであって、前記ナノ秒パルサは、前記RF周波数より低いパルス繰り返し周波数と、2kVより高い電圧とで前記プラズマチャンバ内にパルスを発生させる、前記ナノ秒パルサと、
前記RFドライバと前記カソードとの間に配置されたキャパシタと、
前記ナノ秒パルサと前記カソードとの間に配置されたインダクタと、
を含むプラズマシステム。 - 前記キャパシタはキャパシタンスが約100pFより小さい、請求項17に記載のプラズマシステム。
- 前記インダクタはインダクタンスが約10nHより小さい、請求項17に記載のプラズマシステム。
- 前記パルス繰り返し周波数は10kHzより高い、請求項17に記載のプラズマシステム。
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US201962869999P | 2019-07-02 | 2019-07-02 | |
US62/869,999 | 2019-07-02 | ||
PCT/US2020/040579 WO2021003319A1 (en) | 2019-07-02 | 2020-07-01 | Nanosecond pulser rf isolation |
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JP2022539385A true JP2022539385A (ja) | 2022-09-08 |
JP7405875B2 JP7405875B2 (ja) | 2023-12-26 |
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US (1) | US20210029815A1 (ja) |
EP (1) | EP3994716A4 (ja) |
JP (1) | JP7405875B2 (ja) |
KR (1) | KR20220027141A (ja) |
CN (1) | CN114041203A (ja) |
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WO (1) | WO2021003319A1 (ja) |
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JP7451540B2 (ja) | 2019-01-22 | 2024-03-18 | アプライド マテリアルズ インコーポレイテッド | パルス状電圧波形を制御するためのフィードバックループ |
US11508554B2 (en) | 2019-01-24 | 2022-11-22 | Applied Materials, Inc. | High voltage filter assembly |
TWI778449B (zh) | 2019-11-15 | 2022-09-21 | 美商鷹港科技股份有限公司 | 高電壓脈衝電路 |
US11848176B2 (en) | 2020-07-31 | 2023-12-19 | Applied Materials, Inc. | Plasma processing using pulsed-voltage and radio-frequency power |
US11901157B2 (en) | 2020-11-16 | 2024-02-13 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11798790B2 (en) | 2020-11-16 | 2023-10-24 | Applied Materials, Inc. | Apparatus and methods for controlling ion energy distribution |
US11495470B1 (en) | 2021-04-16 | 2022-11-08 | Applied Materials, Inc. | Method of enhancing etching selectivity using a pulsed plasma |
US11948780B2 (en) | 2021-05-12 | 2024-04-02 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11791138B2 (en) | 2021-05-12 | 2023-10-17 | Applied Materials, Inc. | Automatic electrostatic chuck bias compensation during plasma processing |
US11967483B2 (en) | 2021-06-02 | 2024-04-23 | Applied Materials, Inc. | Plasma excitation with ion energy control |
US20220399185A1 (en) | 2021-06-09 | 2022-12-15 | Applied Materials, Inc. | Plasma chamber and chamber component cleaning methods |
US11810760B2 (en) | 2021-06-16 | 2023-11-07 | Applied Materials, Inc. | Apparatus and method of ion current compensation |
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EP3994716A1 (en) | 2022-05-11 |
CN114041203A (zh) | 2022-02-11 |
US20210029815A1 (en) | 2021-01-28 |
KR20220027141A (ko) | 2022-03-07 |
WO2021003319A1 (en) | 2021-01-07 |
JP7405875B2 (ja) | 2023-12-26 |
TWI795654B (zh) | 2023-03-11 |
TW202112186A (zh) | 2021-03-16 |
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