JP2010532089A5 - - Google Patents

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Publication number
JP2010532089A5
JP2010532089A5 JP2010513638A JP2010513638A JP2010532089A5 JP 2010532089 A5 JP2010532089 A5 JP 2010532089A5 JP 2010513638 A JP2010513638 A JP 2010513638A JP 2010513638 A JP2010513638 A JP 2010513638A JP 2010532089 A5 JP2010532089 A5 JP 2010532089A5
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semiconductor body
manufacturing
component
semiconductor
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JP2010513638A
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JP2010532089A (ja
JP5334966B2 (ja
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JP2010513638A 2007-06-29 2008-05-07 光電構成素子の製造方法 Expired - Fee Related JP5334966B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
DE102007030314.0 2007-06-29
DE102007030314 2007-06-29
DE102007043877.1 2007-09-14
DE102007043877A DE102007043877A1 (de) 2007-06-29 2007-09-14 Verfahren zur Herstellung von optoelektronischen Bauelementen und optoelektronisches Bauelement
PCT/DE2008/000776 WO2009003435A1 (de) 2007-06-29 2008-05-07 Verfahren zur herstellung von optoelektronischen bauelementen und optoelektronisches bauelement

Publications (3)

Publication Number Publication Date
JP2010532089A JP2010532089A (ja) 2010-09-30
JP2010532089A5 true JP2010532089A5 (OSRAM) 2012-05-24
JP5334966B2 JP5334966B2 (ja) 2013-11-06

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JP2010513638A Expired - Fee Related JP5334966B2 (ja) 2007-06-29 2008-05-07 光電構成素子の製造方法

Country Status (8)

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US (1) US20100171215A1 (OSRAM)
EP (1) EP2162927B1 (OSRAM)
JP (1) JP5334966B2 (OSRAM)
KR (1) KR101433423B1 (OSRAM)
CN (1) CN101681964B (OSRAM)
DE (1) DE102007043877A1 (OSRAM)
TW (1) TWI385825B (OSRAM)
WO (1) WO2009003435A1 (OSRAM)

Families Citing this family (67)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102008030815A1 (de) 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
GB2464102A (en) * 2008-10-01 2010-04-07 Optovate Ltd Illumination apparatus comprising multiple monolithic subarrays
JP5590837B2 (ja) * 2009-09-15 2014-09-17 キヤノン株式会社 機能性領域の移設方法
JP5534763B2 (ja) * 2009-09-25 2014-07-02 株式会社東芝 半導体発光装置の製造方法及び半導体発光装置
DE102009048401A1 (de) 2009-10-06 2011-04-07 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
KR101601622B1 (ko) 2009-10-13 2016-03-09 삼성전자주식회사 발광다이오드 소자, 발광 장치 및 발광다이오드 소자의 제조방법
DE102010009015A1 (de) * 2010-02-24 2011-08-25 OSRAM Opto Semiconductors GmbH, 93055 Verfahren zum Herstellen einer Mehrzahl von optoelektronischen Halbleiterchips
GB2484713A (en) 2010-10-21 2012-04-25 Optovate Ltd Illumination apparatus
US8227271B1 (en) * 2011-01-27 2012-07-24 Himax Technologies Limited Packaging method of wafer level chips
US8241932B1 (en) 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
KR101766298B1 (ko) * 2011-03-30 2017-08-08 삼성전자 주식회사 발광소자 및 그 제조방법
WO2013112435A1 (en) 2012-01-24 2013-08-01 Cooledge Lighting Inc. Light - emitting devices having discrete phosphor chips and fabrication methods
US8896010B2 (en) 2012-01-24 2014-11-25 Cooledge Lighting Inc. Wafer-level flip chip device packages and related methods
US8907362B2 (en) 2012-01-24 2014-12-09 Cooledge Lighting Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US9269873B2 (en) * 2012-03-13 2016-02-23 Citizen Holdings Co., Ltd. Semiconductor light emitting device and method for manufacturing same
US9847445B2 (en) * 2012-04-05 2017-12-19 Koninklijke Philips N.V. LED thin-film device partial singulation prior to substrate thinning or removal
US20140048824A1 (en) 2012-08-15 2014-02-20 Epistar Corporation Light-emitting device
US9356070B2 (en) 2012-08-15 2016-05-31 Epistar Corporation Light-emitting device
US20140151630A1 (en) * 2012-12-04 2014-06-05 Feng-Hsu Fan Protection for the epitaxial structure of metal devices
DE102013103079A1 (de) * 2013-03-26 2014-10-02 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
DE102013107531A1 (de) * 2013-07-16 2015-01-22 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
DE102013111496A1 (de) * 2013-10-18 2015-04-23 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
DE102014100542A1 (de) * 2014-01-20 2015-07-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer lateral strukturierten Schicht und optoelektronisches Halbleiterbauteil mit einer solchen Schicht
US9343443B2 (en) 2014-02-05 2016-05-17 Cooledge Lighting, Inc. Light-emitting dies incorporating wavelength-conversion materials and related methods
US11472171B2 (en) * 2014-07-20 2022-10-18 X Display Company Technology Limited Apparatus and methods for micro-transfer-printing
CN105789196B (zh) 2014-12-22 2019-10-08 日月光半导体制造股份有限公司 光学模块及其制造方法
US9972740B2 (en) 2015-06-07 2018-05-15 Tesla, Inc. Chemical vapor deposition tool and process for fabrication of photovoltaic structures
JP6537410B2 (ja) * 2015-08-31 2019-07-03 シチズン電子株式会社 発光装置の製造方法
DE102015116983B4 (de) * 2015-10-06 2025-09-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterbauteils und optoelektronisches Halbleiterbauteil
WO2017194845A1 (fr) * 2016-05-13 2017-11-16 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procédé de fabrication d'un dispositif optoélectronique comportant une pluralité de diodes au nitrure de gallium
US9748434B1 (en) 2016-05-24 2017-08-29 Tesla, Inc. Systems, method and apparatus for curing conductive paste
US9954136B2 (en) 2016-08-03 2018-04-24 Tesla, Inc. Cassette optimized for an inline annealing system
US10115856B2 (en) 2016-10-31 2018-10-30 Tesla, Inc. System and method for curing conductive paste using induction heating
CN108122732B (zh) * 2016-11-29 2020-08-25 中芯国际集成电路制造(上海)有限公司 一种半导体器件及其制造方法和电子装置
DE102017101536B4 (de) 2017-01-26 2022-06-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Selektieren von Halbleiterchips
WO2018169243A1 (ko) * 2017-03-13 2018-09-20 서울반도체주식회사 디스플레이 장치 제조 방법
GB201705365D0 (en) 2017-04-03 2017-05-17 Optovate Ltd Illumination apparatus
GB201705364D0 (en) 2017-04-03 2017-05-17 Optovate Ltd Illumination apparatus
FR3065321B1 (fr) * 2017-04-14 2019-06-21 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif d'affichage emissif a led
FR3066320B1 (fr) * 2017-05-11 2019-07-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d'un dispositif d'affichage emissif a led
CN107818931B (zh) * 2017-09-30 2021-10-19 厦门市三安光电科技有限公司 半导体微元件的转移方法及转移装置
GB201718307D0 (en) 2017-11-05 2017-12-20 Optovate Ltd Display apparatus
GB201800574D0 (en) 2018-01-14 2018-02-28 Optovate Ltd Illumination apparatus
GB201803767D0 (en) 2018-03-09 2018-04-25 Optovate Ltd Illumination apparatus
GB201807747D0 (en) 2018-05-13 2018-06-27 Optovate Ltd Colour micro-LED display apparatus
DE102018120881B4 (de) * 2018-08-27 2025-12-04 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Bauelement und Verfahren zur Herstellung eines Bauelements
US11302248B2 (en) 2019-01-29 2022-04-12 Osram Opto Semiconductors Gmbh U-led, u-led device, display and method for the same
US11271143B2 (en) 2019-01-29 2022-03-08 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
US11610868B2 (en) 2019-01-29 2023-03-21 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE112020000561A5 (de) 2019-01-29 2021-12-02 Osram Opto Semiconductors Gmbh Videowand, treiberschaltung, ansteuerungen und verfahren derselben
US11156759B2 (en) 2019-01-29 2021-10-26 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
DE102019121672A1 (de) * 2019-08-12 2021-02-18 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren und vorrichtung zum aufnehmen und ablegen von optoelektronischen halbleiterchips
WO2020165185A1 (de) 2019-02-11 2020-08-20 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement, optoelektronische anordnung und verfahren
WO2020182278A1 (en) * 2019-03-08 2020-09-17 Osram Opto Semiconductors Gmbh Method for producing optoelectronic semiconductor devices and optoelectronic semiconductor device
JP7604394B2 (ja) 2019-04-23 2024-12-23 エイエムエス－オスラム インターナショナル ゲーエムベーハー Ｌｅｄモジュール、ｌｅｄディスプレイモジュール、および当該モジュールを製造する方法
US11538852B2 (en) 2019-04-23 2022-12-27 Osram Opto Semiconductors Gmbh μ-LED, μ-LED device, display and method for the same
JP7608368B2 (ja) 2019-05-13 2025-01-06 エイエムエス－オスラム インターナショナル ゲーエムベーハー マルチチップ用キャリア構造体
CN114144727A (zh) 2019-05-23 2022-03-04 奥斯兰姆奥普托半导体股份有限两合公司 照明装置、导光装置和方法
TW202102883A (zh) 2019-07-02 2021-01-16 美商瑞爾Ｄ斯帕克有限責任公司 定向顯示設備
US11294233B2 (en) 2019-08-23 2022-04-05 ReaID Spark, LLC Directional illumination apparatus and privacy display
WO2021050918A1 (en) 2019-09-11 2021-03-18 Reald Spark, Llc Switchable illumination apparatus and privacy display
US11016341B2 (en) 2019-09-11 2021-05-25 Reald Spark, Llc Directional illumination apparatus and privacy display
JP7594578B2 (ja) 2019-09-20 2024-12-04 エイエムエス－オスラム インターナショナル ゲーエムベーハー 光電子構造素子、半導体構造およびそれらに関する方法
JP7548655B2 (ja) 2019-10-03 2024-09-10 リアルディー スパーク エルエルシー 受動光学ナノ構造を備える照明装置
WO2021067612A1 (en) * 2019-10-03 2021-04-08 Reald Spark, Llc Illumination apparatus comprising passive optical nanostructures
WO2021168090A1 (en) 2020-02-20 2021-08-26 Reald Spark, Llc Illumination and display apparatus
US12158602B2 (en) 2021-06-22 2024-12-03 Reald Spark, Llc Illumination apparatus

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5617384A (en) * 1979-07-20 1981-02-19 Tokyo Shibaura Electric Co Production of display device
DE4305296C3 (de) * 1993-02-20 1999-07-15 Vishay Semiconductor Gmbh Verfahren zum Herstellen einer strahlungsemittierenden Diode
EP2169733B1 (de) * 1997-09-29 2017-07-19 OSRAM Opto Semiconductors GmbH Halbleiterlichtquelle
JP3641122B2 (ja) * 1997-12-26 2005-04-20 ローム株式会社 半導体発光素子、半導体発光モジュール、およびこれらの製造方法
JP4491948B2 (ja) * 2000-10-06 2010-06-30 ソニー株式会社 素子実装方法および画像表示装置の製造方法
US6795751B2 (en) * 2000-12-06 2004-09-21 Honeywell International Inc. System and method to accomplish high-accuracy mixing
JP4461616B2 (ja) * 2000-12-14 2010-05-12 ソニー株式会社 素子の転写方法、素子保持基板の形成方法、及び素子保持基板
JP2002241586A (ja) * 2001-02-19 2002-08-28 Matsushita Electric Ind Co Ltd 波長変換ペースト材料、複合発光素子、半導体発光装置及びそれらの製造方法
US6417019B1 (en) * 2001-04-04 2002-07-09 Lumileds Lighting, U.S., Llc Phosphor converted light emitting diode
JP2003209346A (ja) * 2002-01-16 2003-07-25 Sony Corp 部品の実装方法及び電子装置
CN100530705C (zh) * 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
JP4082242B2 (ja) * 2003-03-06 2008-04-30 ソニー株式会社 素子転写方法
US7456035B2 (en) * 2003-07-29 2008-11-25 Lumination Llc Flip chip light emitting diode devices having thinned or removed substrates
JP2005093649A (ja) * 2003-09-17 2005-04-07 Oki Data Corp 半導体複合装置、ｌｅｄプリントヘッド、及び、それを用いた画像形成装置
US7408566B2 (en) * 2003-10-22 2008-08-05 Oki Data Corporation Semiconductor device, LED print head and image-forming apparatus using same, and method of manufacturing semiconductor device
EP1706893A2 (en) * 2003-12-24 2006-10-04 Gelcore LLC Laser lift-off of sapphire from a nitride flip-chip
NL1029688C2 (nl) * 2005-08-05 2007-02-06 Lemnis Lighting Ip Gmbh Werkwijze voor het vervaardigen van een elektrische schakeling voorzien van een veelvoud van LED's.
US7125734B2 (en) * 2005-03-09 2006-10-24 Gelcore, Llc Increased light extraction from a nitride LED
US7290946B2 (en) * 2005-03-11 2007-11-06 Cortek Opto Corp. Optical subassembly
US7673466B2 (en) * 2005-08-31 2010-03-09 Pacy David H Auxiliary power device for refrigerated trucks
WO2007034537A1 (ja) * 2005-09-20 2007-03-29 Renesas Technology Corp. Ｌｅｄ光源およびその製造方法
KR100714589B1 (ko) * 2005-10-05 2007-05-07 삼성전기주식회사 수직구조 발광 다이오드의 제조 방법
JP4849866B2 (ja) * 2005-10-25 2012-01-11 京セラ株式会社 照明装置
US20070200063A1 (en) * 2006-02-28 2007-08-30 Virgin Islands Microsystems, Inc. Wafer-level testing of light-emitting resonant structures

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