JP2010528479A - 角度フィルタ素子が設けられたルミネセンスダイオードチップ - Google Patents

角度フィルタ素子が設けられたルミネセンスダイオードチップ Download PDF

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Publication number
JP2010528479A
JP2010528479A JP2010509671A JP2010509671A JP2010528479A JP 2010528479 A JP2010528479 A JP 2010528479A JP 2010509671 A JP2010509671 A JP 2010509671A JP 2010509671 A JP2010509671 A JP 2010509671A JP 2010528479 A JP2010528479 A JP 2010528479A
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Prior art keywords
diode chip
filter element
radiation
luminescence
wavelength
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JP2010509671A
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Japanese (ja)
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JP2010528479A5 (enExample
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シュトロイベル クラウス
ヴィルト ラルフ
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2010528479A publication Critical patent/JP2010528479A/ja
Publication of JP2010528479A5 publication Critical patent/JP2010528479A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
JP2010509671A 2007-05-30 2008-05-21 角度フィルタ素子が設けられたルミネセンスダイオードチップ Pending JP2010528479A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007025092A DE102007025092A1 (de) 2007-05-30 2007-05-30 Lumineszenzdiodenchip
PCT/DE2008/000869 WO2008145096A1 (de) 2007-05-30 2008-05-21 Lumineszenzdiodenchip mit winkelfilterelement

Publications (2)

Publication Number Publication Date
JP2010528479A true JP2010528479A (ja) 2010-08-19
JP2010528479A5 JP2010528479A5 (enExample) 2011-06-23

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JP2010509671A Pending JP2010528479A (ja) 2007-05-30 2008-05-21 角度フィルタ素子が設けられたルミネセンスダイオードチップ

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Country Link
US (1) US8405104B2 (enExample)
EP (1) EP2149163B9 (enExample)
JP (1) JP2010528479A (enExample)
KR (1) KR101647150B1 (enExample)
CN (1) CN101681967B (enExample)
DE (1) DE102007025092A1 (enExample)
TW (1) TWI415294B (enExample)
WO (1) WO2008145096A1 (enExample)

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JP2012199411A (ja) * 2011-03-22 2012-10-18 Stanley Electric Co Ltd 発光装置
JP2013207049A (ja) * 2012-03-28 2013-10-07 Nec Corp 波長変換体を用いた発光装置
US8860907B2 (en) 2010-09-14 2014-10-14 Panasonic Corporation Backlight unit, liquid crystal display apparatus using the same, and light-emitting diode used therefor
JP5617916B2 (ja) * 2010-09-14 2014-11-05 パナソニック株式会社 バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード

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TWI289708B (en) 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
US7342705B2 (en) 2004-02-03 2008-03-11 Idc, Llc Spatial light modulator with integrated optical compensation structure
US7706050B2 (en) 2004-03-05 2010-04-27 Qualcomm Mems Technologies, Inc. Integrated modulator illumination
US7750886B2 (en) 2004-09-27 2010-07-06 Qualcomm Mems Technologies, Inc. Methods and devices for lighting displays
US7561323B2 (en) 2004-09-27 2009-07-14 Idc, Llc Optical films for directing light towards active areas of displays
US7603001B2 (en) 2006-02-17 2009-10-13 Qualcomm Mems Technologies, Inc. Method and apparatus for providing back-lighting in an interferometric modulator display device
US7845841B2 (en) 2006-08-28 2010-12-07 Qualcomm Mems Technologies, Inc. Angle sweeping holographic illuminator
EP1943551A2 (en) 2006-10-06 2008-07-16 Qualcomm Mems Technologies, Inc. Light guide
US7855827B2 (en) 2006-10-06 2010-12-21 Qualcomm Mems Technologies, Inc. Internal optical isolation structure for integrated front or back lighting
KR101628340B1 (ko) 2006-10-06 2016-06-08 퀄컴 엠이엠에스 테크놀로지스, 인크. 디스플레이 장치 및 디스플레이의 형성 방법
US8107155B2 (en) 2006-10-06 2012-01-31 Qualcomm Mems Technologies, Inc. System and method for reducing visual artifacts in displays
US7777954B2 (en) 2007-01-30 2010-08-17 Qualcomm Mems Technologies, Inc. Systems and methods of providing a light guiding layer
US7733439B2 (en) 2007-04-30 2010-06-08 Qualcomm Mems Technologies, Inc. Dual film light guide for illuminating displays
DE102007025092A1 (de) 2007-05-30 2008-12-04 Osram Opto Semiconductors Gmbh Lumineszenzdiodenchip
US7949213B2 (en) * 2007-12-07 2011-05-24 Qualcomm Mems Technologies, Inc. Light illumination of displays with front light guide and coupling elements
US8068710B2 (en) 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
WO2009102731A2 (en) 2008-02-12 2009-08-20 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing brightness of displays using angle conversion layers
WO2009129264A1 (en) 2008-04-15 2009-10-22 Qualcomm Mems Technologies, Inc. Light with bi-directional propagation
US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
US9711688B2 (en) 2008-12-02 2017-07-18 Koninklijke Philips N.V. Controlling LED emission pattern using optically active materials
EP2374165B1 (en) * 2008-12-02 2019-01-09 Lumileds Holding B.V. Led assembly
US8172417B2 (en) 2009-03-06 2012-05-08 Qualcomm Mems Technologies, Inc. Shaped frontlight reflector for use with display
KR100993045B1 (ko) * 2009-10-23 2010-11-08 엘지이노텍 주식회사 발광소자 칩 및 발광소자 패키지
US8979349B2 (en) 2009-05-29 2015-03-17 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
US20110062472A1 (en) * 2009-09-17 2011-03-17 Koninklijke Philips Electronics N.V. Wavelength-converted semiconductor light emitting device
EP2323184A1 (en) * 2009-11-13 2011-05-18 Koninklijke Philips Electronics N.V. LED assembly
JP5515992B2 (ja) * 2010-04-07 2014-06-11 日亜化学工業株式会社 発光装置
WO2012014360A1 (ja) * 2010-07-26 2012-02-02 株式会社小糸製作所 発光モジュール
KR101244921B1 (ko) * 2010-08-23 2013-03-18 피에스아이 주식회사 멀티칩 백색 ｌｅｄ 소자
DE102010035490A1 (de) 2010-08-26 2012-03-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements
US8902484B2 (en) 2010-12-15 2014-12-02 Qualcomm Mems Technologies, Inc. Holographic brightness enhancement film
EP2472612A1 (en) * 2010-12-29 2012-07-04 Koninklijke Philips Electronics N.V. Improved angular color performance of white LED lighting systems
WO2013084132A1 (en) * 2011-12-07 2013-06-13 Koninklijke Philips Electronics N.V. Beam shaping light emitting module
KR102158209B1 (ko) * 2013-07-26 2020-09-22 엘지전자 주식회사 전자기기
KR102125450B1 (ko) 2013-12-05 2020-06-22 엘지이노텍 주식회사 광변환부재 및 이를 포함하는 조명장치
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
DE102015104220A1 (de) * 2015-03-20 2016-09-22 Osram Opto Semiconductors Gmbh Optoelektronische Leuchtvorrichtung
KR102380825B1 (ko) * 2015-05-29 2022-04-01 삼성전자주식회사 반도체 발광다이오드 칩 및 이를 구비한 발광장치
JP2017084875A (ja) * 2015-10-23 2017-05-18 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
US10243124B2 (en) * 2016-12-26 2019-03-26 Nichia Corporation Light emitting device
CN109411590B (zh) * 2017-08-17 2020-01-07 光宝光电(常州)有限公司 发光二极管结构及发光单元
FR3087579B1 (fr) 2018-10-22 2022-08-12 Aledia Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree
CN210607312U (zh) * 2019-09-19 2020-05-22 朗明纳斯光电(厦门)有限公司 发光二极管
WO2021204652A1 (de) * 2020-04-08 2021-10-14 Osram Opto Semiconductors Gmbh Optoelektronisches bauelement und beleuchtungsvorrichtung
DE112021002204A5 (de) * 2020-04-08 2023-01-19 Ams-Osram International Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE112021002203A5 (de) * 2020-04-08 2023-01-19 Ams-Osram International Gmbh Optoelektronisches Bauelement
DE102020114884A1 (de) 2020-06-04 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
DE102021119657A1 (de) * 2020-07-31 2022-02-03 Epistar Corporation Lichtemittierende Vorrichtung und Anzeigevorrichtung, die sie enthält
GB2598753B (en) * 2020-09-10 2023-06-14 Plessey Semiconductors Ltd Selective optical filter for RGB LED
CN112241088B (zh) * 2020-10-15 2021-09-03 Tcl华星光电技术有限公司 一种微型发光二极管灯板、背光模组及其制备方法
DE102021123818A1 (de) 2021-09-15 2023-03-16 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials
DE102021124146A1 (de) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips
DE102021129106A1 (de) 2021-11-09 2023-05-11 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer halbleiterchip und desinfektionsvorrichtung
DE102024100578A1 (de) * 2024-01-10 2025-07-10 Ams-Osram International Gmbh Optoelektronisches bauelement

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JPH0738151A (ja) * 1993-07-22 1995-02-07 Sharp Corp 光半導体装置
JPH0794781A (ja) * 1993-09-24 1995-04-07 Toshiba Corp 面発光型半導体発光ダイオード
JP2002536850A (ja) * 1999-02-10 2002-10-29 コミツサリア タ レネルジー アトミーク シリコン発光装置とその製造方法
JP2001028457A (ja) * 1999-07-14 2001-01-30 Fuji Photo Film Co Ltd ＧａＮ系半導体発光素子
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US8860907B2 (en) 2010-09-14 2014-10-14 Panasonic Corporation Backlight unit, liquid crystal display apparatus using the same, and light-emitting diode used therefor
JP5617916B2 (ja) * 2010-09-14 2014-11-05 パナソニック株式会社 バックライト装置、およびそのバックライト装置を用いた液晶表示装置、およびそれらに用いる発光ダイオード
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Also Published As

Publication number Publication date
TWI415294B (zh) 2013-11-11
WO2008145096A1 (de) 2008-12-04
KR101647150B1 (ko) 2016-08-23
US20100084678A1 (en) 2010-04-08
KR20100017677A (ko) 2010-02-16
CN101681967A (zh) 2010-03-24
DE102007025092A1 (de) 2008-12-04
EP2149163B1 (de) 2017-04-12
US8405104B2 (en) 2013-03-26
CN101681967B (zh) 2012-08-15
EP2149163A1 (de) 2010-02-03
EP2149163B9 (de) 2017-09-27
TW200910652A (en) 2009-03-01

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