CN101681967B - 具有角度滤波元件的发光二极管芯片 - Google Patents

具有角度滤波元件的发光二极管芯片 Download PDF

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Publication number
CN101681967B
CN101681967B CN200880018196XA CN200880018196A CN101681967B CN 101681967 B CN101681967 B CN 101681967B CN 200880018196X A CN200880018196X A CN 200880018196XA CN 200880018196 A CN200880018196 A CN 200880018196A CN 101681967 B CN101681967 B CN 101681967B
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China
Prior art keywords
light
filter element
diode chip
emitting diode
backlight unit
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Expired - Fee Related
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CN200880018196XA
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Chinese (zh)
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CN101681967A (zh
Inventor
K·斯特鲁贝尔
R·沃思
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings

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  • Led Device Packages (AREA)
  • Led Devices (AREA)
CN200880018196XA 2007-05-30 2008-05-21 具有角度滤波元件的发光二极管芯片 Expired - Fee Related CN101681967B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102007025092.6 2007-05-30
DE102007025092A DE102007025092A1 (de) 2007-05-30 2007-05-30 Lumineszenzdiodenchip
PCT/DE2008/000869 WO2008145096A1 (de) 2007-05-30 2008-05-21 Lumineszenzdiodenchip mit winkelfilterelement

Publications (2)

Publication Number Publication Date
CN101681967A CN101681967A (zh) 2010-03-24
CN101681967B true CN101681967B (zh) 2012-08-15

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CN200880018196XA Expired - Fee Related CN101681967B (zh) 2007-05-30 2008-05-21 具有角度滤波元件的发光二极管芯片

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Country Link
US (1) US8405104B2 (enExample)
EP (1) EP2149163B9 (enExample)
JP (1) JP2010528479A (enExample)
KR (1) KR101647150B1 (enExample)
CN (1) CN101681967B (enExample)
DE (1) DE102007025092A1 (enExample)
TW (1) TWI415294B (enExample)
WO (1) WO2008145096A1 (enExample)

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US8068710B2 (en) 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
US7949213B2 (en) * 2007-12-07 2011-05-24 Qualcomm Mems Technologies, Inc. Light illumination of displays with front light guide and coupling elements
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US8358266B2 (en) 2008-09-02 2013-01-22 Qualcomm Mems Technologies, Inc. Light turning device with prismatic light turning features
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KR102158209B1 (ko) * 2013-07-26 2020-09-22 엘지전자 주식회사 전자기기
KR102125450B1 (ko) * 2013-12-05 2020-06-22 엘지이노텍 주식회사 광변환부재 및 이를 포함하는 조명장치
JP2015173142A (ja) * 2014-03-11 2015-10-01 株式会社東芝 半導体発光装置
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JP2017084875A (ja) * 2015-10-23 2017-05-18 ラピスセミコンダクタ株式会社 半導体装置および半導体装置の製造方法
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CN109411590B (zh) * 2017-08-17 2020-01-07 光宝光电(常州)有限公司 发光二极管结构及发光单元
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CN210607312U (zh) * 2019-09-19 2020-05-22 朗明纳斯光电(厦门)有限公司 发光二极管
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DE102020114884A1 (de) 2020-06-04 2021-12-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements
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GB2598753B (en) * 2020-09-10 2023-06-14 Plessey Semiconductors Ltd Selective optical filter for RGB LED
CN112241088B (zh) * 2020-10-15 2021-09-03 Tcl华星光电技术有限公司 一种微型发光二极管灯板、背光模组及其制备方法
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DE102021124146A1 (de) 2021-09-17 2023-03-23 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips
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Also Published As

Publication number Publication date
KR101647150B1 (ko) 2016-08-23
EP2149163A1 (de) 2010-02-03
TW200910652A (en) 2009-03-01
US20100084678A1 (en) 2010-04-08
EP2149163B9 (de) 2017-09-27
KR20100017677A (ko) 2010-02-16
US8405104B2 (en) 2013-03-26
DE102007025092A1 (de) 2008-12-04
JP2010528479A (ja) 2010-08-19
WO2008145096A1 (de) 2008-12-04
CN101681967A (zh) 2010-03-24
TWI415294B (zh) 2013-11-11
EP2149163B1 (de) 2017-04-12

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