TWI415294B - 發光二極體晶片 - Google Patents
發光二極體晶片 Download PDFInfo
- Publication number
- TWI415294B TWI415294B TW097117914A TW97117914A TWI415294B TW I415294 B TWI415294 B TW I415294B TW 097117914 A TW097117914 A TW 097117914A TW 97117914 A TW97117914 A TW 97117914A TW I415294 B TWI415294 B TW I415294B
- Authority
- TW
- Taiwan
- Prior art keywords
- filter element
- radiation
- light
- angle
- emitting diode
- Prior art date
Links
- 230000005855 radiation Effects 0.000 claims abstract description 78
- 239000004065 semiconductor Substances 0.000 claims abstract description 70
- 238000006243 chemical reaction Methods 0.000 claims abstract description 52
- 238000004020 luminiscence type Methods 0.000 claims abstract description 31
- 239000000463 material Substances 0.000 claims description 25
- 239000010409 thin film Substances 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 2
- 230000035515 penetration Effects 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims 1
- 239000010432 diamond Substances 0.000 claims 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims 1
- 229910001936 tantalum oxide Inorganic materials 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 35
- 238000010586 diagram Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000000203 mixture Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 229910017464 nitrogen compound Inorganic materials 0.000 description 4
- 150000002830 nitrogen compounds Chemical class 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 238000004064 recycling Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 210000004508 polar body Anatomy 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- BIXHRBFZLLFBFL-UHFFFAOYSA-N germanium nitride Chemical compound N#[Ge]N([Ge]#N)[Ge]#N BIXHRBFZLLFBFL-UHFFFAOYSA-N 0.000 description 1
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium oxide Inorganic materials O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PVADDRMAFCOOPC-UHFFFAOYSA-N oxogermanium Chemical compound [Ge]=O PVADDRMAFCOOPC-UHFFFAOYSA-N 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
- H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/851—Wavelength conversion means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
Landscapes
- Led Device Packages (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007025092A DE102007025092A1 (de) | 2007-05-30 | 2007-05-30 | Lumineszenzdiodenchip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200910652A TW200910652A (en) | 2009-03-01 |
| TWI415294B true TWI415294B (zh) | 2013-11-11 |
Family
ID=39712595
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW097117914A TWI415294B (zh) | 2007-05-30 | 2008-05-15 | 發光二極體晶片 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US8405104B2 (enExample) |
| EP (1) | EP2149163B9 (enExample) |
| JP (1) | JP2010528479A (enExample) |
| KR (1) | KR101647150B1 (enExample) |
| CN (1) | CN101681967B (enExample) |
| DE (1) | DE102007025092A1 (enExample) |
| TW (1) | TWI415294B (enExample) |
| WO (1) | WO2008145096A1 (enExample) |
Families Citing this family (58)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI289708B (en) | 2002-12-25 | 2007-11-11 | Qualcomm Mems Technologies Inc | Optical interference type color display |
| US7342705B2 (en) | 2004-02-03 | 2008-03-11 | Idc, Llc | Spatial light modulator with integrated optical compensation structure |
| US7706050B2 (en) | 2004-03-05 | 2010-04-27 | Qualcomm Mems Technologies, Inc. | Integrated modulator illumination |
| US7750886B2 (en) | 2004-09-27 | 2010-07-06 | Qualcomm Mems Technologies, Inc. | Methods and devices for lighting displays |
| US7561323B2 (en) | 2004-09-27 | 2009-07-14 | Idc, Llc | Optical films for directing light towards active areas of displays |
| US7603001B2 (en) | 2006-02-17 | 2009-10-13 | Qualcomm Mems Technologies, Inc. | Method and apparatus for providing back-lighting in an interferometric modulator display device |
| US7845841B2 (en) | 2006-08-28 | 2010-12-07 | Qualcomm Mems Technologies, Inc. | Angle sweeping holographic illuminator |
| EP1943551A2 (en) | 2006-10-06 | 2008-07-16 | Qualcomm Mems Technologies, Inc. | Light guide |
| US7855827B2 (en) | 2006-10-06 | 2010-12-21 | Qualcomm Mems Technologies, Inc. | Internal optical isolation structure for integrated front or back lighting |
| KR101628340B1 (ko) | 2006-10-06 | 2016-06-08 | 퀄컴 엠이엠에스 테크놀로지스, 인크. | 디스플레이 장치 및 디스플레이의 형성 방법 |
| US8107155B2 (en) | 2006-10-06 | 2012-01-31 | Qualcomm Mems Technologies, Inc. | System and method for reducing visual artifacts in displays |
| US7777954B2 (en) | 2007-01-30 | 2010-08-17 | Qualcomm Mems Technologies, Inc. | Systems and methods of providing a light guiding layer |
| US7733439B2 (en) | 2007-04-30 | 2010-06-08 | Qualcomm Mems Technologies, Inc. | Dual film light guide for illuminating displays |
| DE102007025092A1 (de) | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
| US7949213B2 (en) * | 2007-12-07 | 2011-05-24 | Qualcomm Mems Technologies, Inc. | Light illumination of displays with front light guide and coupling elements |
| US8068710B2 (en) | 2007-12-07 | 2011-11-29 | Qualcomm Mems Technologies, Inc. | Decoupled holographic film and diffuser |
| WO2009102731A2 (en) | 2008-02-12 | 2009-08-20 | Qualcomm Mems Technologies, Inc. | Devices and methods for enhancing brightness of displays using angle conversion layers |
| WO2009129264A1 (en) | 2008-04-15 | 2009-10-22 | Qualcomm Mems Technologies, Inc. | Light with bi-directional propagation |
| US8358266B2 (en) | 2008-09-02 | 2013-01-22 | Qualcomm Mems Technologies, Inc. | Light turning device with prismatic light turning features |
| US9711688B2 (en) | 2008-12-02 | 2017-07-18 | Koninklijke Philips N.V. | Controlling LED emission pattern using optically active materials |
| EP2374165B1 (en) * | 2008-12-02 | 2019-01-09 | Lumileds Holding B.V. | Led assembly |
| US8172417B2 (en) | 2009-03-06 | 2012-05-08 | Qualcomm Mems Technologies, Inc. | Shaped frontlight reflector for use with display |
| KR100993045B1 (ko) * | 2009-10-23 | 2010-11-08 | 엘지이노텍 주식회사 | 발광소자 칩 및 발광소자 패키지 |
| US8979349B2 (en) | 2009-05-29 | 2015-03-17 | Qualcomm Mems Technologies, Inc. | Illumination devices and methods of fabrication thereof |
| US20110062472A1 (en) * | 2009-09-17 | 2011-03-17 | Koninklijke Philips Electronics N.V. | Wavelength-converted semiconductor light emitting device |
| EP2323184A1 (en) * | 2009-11-13 | 2011-05-18 | Koninklijke Philips Electronics N.V. | LED assembly |
| JP5515992B2 (ja) * | 2010-04-07 | 2014-06-11 | 日亜化学工業株式会社 | 発光装置 |
| WO2012014360A1 (ja) * | 2010-07-26 | 2012-02-02 | 株式会社小糸製作所 | 発光モジュール |
| KR101244921B1 (ko) * | 2010-08-23 | 2013-03-18 | 피에스아이 주식회사 | 멀티칩 백색 ｌｅｄ 소자 |
| DE102010035490A1 (de) | 2010-08-26 | 2012-03-01 | Osram Opto Semiconductors Gmbh | Strahlungsemittierendes Bauelement und Verfahren zur Herstellung eines strahlungsemittierenden Bauelements |
| KR101384052B1 (ko) | 2010-09-14 | 2014-04-09 | 파나소닉 주식회사 | 백라이트 장치, 및 그 백라이트 장치를 이용한 액정 표시 장치, 및 그들에 이용하는 발광 다이오드 |
| CN102640309B (zh) * | 2010-09-14 | 2016-01-13 | 松下电器产业株式会社 | 背光源装置、使用该背光源装置的液晶显示装置和在它们中使用的发光二极管 |
| US8902484B2 (en) | 2010-12-15 | 2014-12-02 | Qualcomm Mems Technologies, Inc. | Holographic brightness enhancement film |
| EP2472612A1 (en) * | 2010-12-29 | 2012-07-04 | Koninklijke Philips Electronics N.V. | Improved angular color performance of white LED lighting systems |
| JP5736203B2 (ja) * | 2011-03-22 | 2015-06-17 | スタンレー電気株式会社 | 発光装置 |
| WO2013084132A1 (en) * | 2011-12-07 | 2013-06-13 | Koninklijke Philips Electronics N.V. | Beam shaping light emitting module |
| JP2013207049A (ja) * | 2012-03-28 | 2013-10-07 | Nec Corp | 波長変換体を用いた発光装置 |
| KR102158209B1 (ko) * | 2013-07-26 | 2020-09-22 | 엘지전자 주식회사 | 전자기기 |
| KR102125450B1 (ko) | 2013-12-05 | 2020-06-22 | 엘지이노텍 주식회사 | 광변환부재 및 이를 포함하는 조명장치 |
| JP2015173142A (ja) * | 2014-03-11 | 2015-10-01 | 株式会社東芝 | 半導体発光装置 |
| DE102015104220A1 (de) * | 2015-03-20 | 2016-09-22 | Osram Opto Semiconductors Gmbh | Optoelektronische Leuchtvorrichtung |
| KR102380825B1 (ko) * | 2015-05-29 | 2022-04-01 | 삼성전자주식회사 | 반도체 발광다이오드 칩 및 이를 구비한 발광장치 |
| JP2017084875A (ja) * | 2015-10-23 | 2017-05-18 | ラピスセミコンダクタ株式会社 | 半導体装置および半導体装置の製造方法 |
| US10243124B2 (en) * | 2016-12-26 | 2019-03-26 | Nichia Corporation | Light emitting device |
| CN109411590B (zh) * | 2017-08-17 | 2020-01-07 | 光宝光电(常州)有限公司 | 发光二极管结构及发光单元 |
| FR3087579B1 (fr) | 2018-10-22 | 2022-08-12 | Aledia | Dispositif optoelectronique a diodes electroluminescentes a extraction de lumiere amelioree |
| CN210607312U (zh) * | 2019-09-19 | 2020-05-22 | 朗明纳斯光电(厦门)有限公司 | 发光二极管 |
| WO2021204652A1 (de) * | 2020-04-08 | 2021-10-14 | Osram Opto Semiconductors Gmbh | Optoelektronisches bauelement und beleuchtungsvorrichtung |
| DE112021002204A5 (de) * | 2020-04-08 | 2023-01-19 | Ams-Osram International Gmbh | Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements |
| DE112021002203A5 (de) * | 2020-04-08 | 2023-01-19 | Ams-Osram International Gmbh | Optoelektronisches Bauelement |
| DE102020114884A1 (de) | 2020-06-04 | 2021-12-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes bauelement und verfahren zur herstellung eines strahlungsemittierenden bauelements |
| DE102021119657A1 (de) * | 2020-07-31 | 2022-02-03 | Epistar Corporation | Lichtemittierende Vorrichtung und Anzeigevorrichtung, die sie enthält |
| GB2598753B (en) * | 2020-09-10 | 2023-06-14 | Plessey Semiconductors Ltd | Selective optical filter for RGB LED |
| CN112241088B (zh) * | 2020-10-15 | 2021-09-03 | Tcl华星光电技术有限公司 | 一种微型发光二极管灯板、背光模组及其制备方法 |
| DE102021123818A1 (de) | 2021-09-15 | 2023-03-16 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Strahlungsemittierendes halbleiterbauteil, verfahren zur auswahl eines dielektrischen schichtenstapels und verfahren zur auswahl eines konversionsmaterials |
| DE102021124146A1 (de) | 2021-09-17 | 2023-03-23 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Licht emittierender halbleiterchip und verfahren zur herstellung eines licht emittierenden halbleiterchips |
| DE102021129106A1 (de) | 2021-11-09 | 2023-05-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronischer halbleiterchip und desinfektionsvorrichtung |
| DE102024100578A1 (de) * | 2024-01-10 | 2025-07-10 | Ams-Osram International Gmbh | Optoelektronisches bauelement |
Citations (3)
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| US20070023762A1 (en) * | 2005-07-29 | 2007-02-01 | Luxo Asa And Oec Ag | White light emitting LED-powered lamp |
| US20070085100A1 (en) * | 2005-10-14 | 2007-04-19 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
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| FR2789496B1 (fr) | 1999-02-10 | 2002-06-07 | Commissariat Energie Atomique | Dispositif emetteur et guide de lumiere, avec une region active de silicium contenant des centres radiatifs, et procede de fabrication d'un tel dispositif |
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| DE102005062514A1 (de) * | 2005-09-28 | 2007-03-29 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| JP2008005383A (ja) * | 2006-06-26 | 2008-01-10 | Matsushita Electric Ind Co Ltd | 撮像装置及びイメージセンサ |
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| EP1887634A3 (de) | 2006-08-11 | 2011-09-07 | OSRAM Opto Semiconductors GmbH | Strahlungsemittierendes Halbleiterbauelement |
| DE112007002896A5 (de) * | 2006-09-29 | 2009-09-03 | Osram Opto Semiconductors Gmbh | Optoelektronisches Bauelement |
| DE102007025092A1 (de) | 2007-05-30 | 2008-12-04 | Osram Opto Semiconductors Gmbh | Lumineszenzdiodenchip |
-
2007
- 2007-05-30 DE DE102007025092A patent/DE102007025092A1/de not_active Withdrawn
-
2008
- 2008-05-15 TW TW097117914A patent/TWI415294B/zh active
- 2008-05-21 CN CN200880018196XA patent/CN101681967B/zh not_active Expired - Fee Related
- 2008-05-21 EP EP08758109.6A patent/EP2149163B9/de not_active Not-in-force
- 2008-05-21 WO PCT/DE2008/000869 patent/WO2008145096A1/de not_active Ceased
- 2008-05-21 JP JP2010509671A patent/JP2010528479A/ja active Pending
- 2008-05-21 US US12/595,356 patent/US8405104B2/en not_active Expired - Fee Related
- 2008-05-21 KR KR1020097025496A patent/KR101647150B1/ko not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060054904A1 (en) * | 2004-09-14 | 2006-03-16 | Industrial Technology Research Institute | Light emitting diode and fabrication method thereof |
| US20070023762A1 (en) * | 2005-07-29 | 2007-02-01 | Luxo Asa And Oec Ag | White light emitting LED-powered lamp |
| US20070085100A1 (en) * | 2005-10-14 | 2007-04-19 | The Regents Of The University Of California | Photonic structures for efficient light extraction and conversion in multi-color light emitting devices |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008145096A1 (de) | 2008-12-04 |
| KR101647150B1 (ko) | 2016-08-23 |
| US20100084678A1 (en) | 2010-04-08 |
| KR20100017677A (ko) | 2010-02-16 |
| CN101681967A (zh) | 2010-03-24 |
| DE102007025092A1 (de) | 2008-12-04 |
| EP2149163B1 (de) | 2017-04-12 |
| US8405104B2 (en) | 2013-03-26 |
| CN101681967B (zh) | 2012-08-15 |
| EP2149163A1 (de) | 2010-02-03 |
| EP2149163B9 (de) | 2017-09-27 |
| TW200910652A (en) | 2009-03-01 |
| JP2010528479A (ja) | 2010-08-19 |
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