JP2010525569A - 発光デバイスパッケージ及びこれを備えるライトユニット - Google Patents
発光デバイスパッケージ及びこれを備えるライトユニット Download PDFInfo
- Publication number
- JP2010525569A JP2010525569A JP2010503977A JP2010503977A JP2010525569A JP 2010525569 A JP2010525569 A JP 2010525569A JP 2010503977 A JP2010503977 A JP 2010503977A JP 2010503977 A JP2010503977 A JP 2010503977A JP 2010525569 A JP2010525569 A JP 2010525569A
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- emitting device
- device package
- lead frame
- frame
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000463 material Substances 0.000 claims description 7
- 230000003287 optical effect Effects 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229920005989 resin Polymers 0.000 claims description 5
- 239000011347 resin Substances 0.000 claims description 5
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 4
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 4
- 239000004954 Polyphthalamide Substances 0.000 claims description 4
- 229920010524 Syndiotactic polystyrene Polymers 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229920006375 polyphtalamide Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 239000011135 tin Substances 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 229920012310 Polyamide 9T (PA9T) Polymers 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052718 tin Inorganic materials 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 229910002065 alloy metal Inorganic materials 0.000 claims 1
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 238000012986 modification Methods 0.000 description 14
- 230000004048 modification Effects 0.000 description 14
- 238000007747 plating Methods 0.000 description 12
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 6
- 230000004907 flux Effects 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 238000005452 bending Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 description 1
- 208000006930 Pseudomyxoma Peritonei Diseases 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920000306 polymethylpentene Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
【解決手段】本発明による発光デバイスパッケージは一側にキャビティが形成されたパッケージ本体と、前記キャビティに底部フレーム及び側壁フレームを含む少なくとも1つのリードフレームと、前記リードフレームに電気的に連結された発光素子を含む。
【選択図】図2
Description
Claims (20)
- 一方の側にキャビティが形成されたパッケージ本体と、
前記キャビティに底部フレーム及び側壁フレームを含む少なくとも1つのリードフレームと、
前記リードフレームに電気的に連結された発光素子とを含む発光デバイスパッケージ。 - 前記パッケージ本体はポリフタルアミド(PPA)、ポリアミド9T(PA9T)、液晶ポリマー(LCP)、シンジオタクチックポリスチレン(SPS)のうちのいずれか1つの材質を含む請求項1に記載の発光デバイスパッケージ。
- 複数のリードフレームが前記キャビティの一方の側及び他方の側に分離されて設けられる請求項1に記載の発光デバイスパッケージ。
- 前記リードフレームの底部フレームと両側壁フレームのうち少なくとも1つは、前記パッケージ本体の外部に延長されて外部電極となる請求項1に記載の発光デバイスパッケージ。
- 前記リードフレームの側壁フレームは所定角度に傾斜、または所定曲率で曲折するように形成される請求項1に記載の発光デバイスパッケージ。
- 前記リードフレームは鉄、錫、クロム、亜鉛、ニッケル、アルミニウム、銀、金、銅及びこれらの合金金属のうちいずれか1つの金属を含む請求項1に記載の発光デバイスパッケージ。
- 前記リードフレームは、銅材質と前記リードフレームの表面にメッキされたAg及びAl中少なくとも1つを含む請求項1に記載の発光デバイスパッケージ。
- 前記リードフレームの少なくとも1つの側壁フレームは、前記底部フレームに垂直する軸を基準として15〜30°の傾斜角で形成される請求項1に記載の発光デバイスパッケージ。
- 前記少なくとも1つのリードフレームは、キャビティの両側壁に両側壁フレームを含み、 前記側壁フレーム間の間隔は600〜850μmである請求項1に記載の発光デバイスパッケージ。
- 前記リードフレーム内のキャビティの深さは250〜700μmである請求項1に記載の発光デバイスパッケージ。
- 前記リードフレームの底部フレームの幅は300〜450μmであり、前記リードフレームの厚さは20〜300μmである請求項1に記載の発光デバイスパッケージ。
- 前記発光素子は、第3族元素と第5族元素の化合物半導体を含む少なくとも1つのLEDチップを含む請求項1に記載の発光デバイスパッケージ。
- キャビティを含むパッケージ本体と、
前記キャビティの一側に底部フレームと少なくとも1つの側壁フレームを含む第1リードフレームと、
前記キャビティの他側に底部フレームを含む第2リードフレームと、
前記第1及び第2リードフレームに電気的に連結された発光素子とを含む発光デバイスパッケージ。 - 前記第1及び第2リードフレームは前記キャビティの底部に設けられた底部フレームと、前記キャビティの両側壁に設けられた側壁フレームを含む請求項13に記載の発光デバイスパッケージ。
- 前記第1及び第2リードフレーム中少なくとも1つは、両側壁フレームの内部角度が30〜60°である請求項14に記載の発光デバイスパッケージ。
- 前記発光素子は青色LEDチップ、赤色LEDチップ、緑色LEDチップ、黄色LEDチップ、黄緑LEDチップ、紫外線LEDチップ中少なくとも1つを含み、前記LEDチップを保護するために前記キャビティに形成された樹脂物を含む請求項13に記載の発光デバイスパッケージ。
- 前記第1及び第2リードフレーム中少なくとも1つの側壁フレームは傾斜し、所定の曲率で曲折されるように形成される請求項13に記載の発光デバイスパッケージ。
- 前記キャビティ内に、第1及び第2リードフレームの表面にメッキされた反射物質を含む請求項13に記載の発光デバイスパッケージ。
- 複数の発光デバイスパッケージを含む発光装置と、
前記発光装置の一側に設けられた光ガイドプレートと、
前記光ガイドプレートの上及び/または下に設けられた光学部材を含み、
前記発光デバイスパッケージは、キャビティが形成されたパッケージ本体と、前記キャビティ内の底部フレーム及び側壁フレームを含む少なくとも1つのリードフレームと、
前記リードフレームに電気的に連結された発光素子を含むライトユニット。 - 前記リードフレームは、両側壁フレームの内部角度が30〜60°である請求項19に記載のライトユニット。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020070038279A KR100901618B1 (ko) | 2007-04-19 | 2007-04-19 | 발광 다이오드 패키지 및 제조방법 |
PCT/KR2008/002183 WO2008130140A1 (en) | 2007-04-19 | 2008-04-17 | Light emitting device package and light unit having the same |
Related Child Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012037167A Division JP2012109612A (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ及びその製造方法 |
JP2012037166A Division JP2012109611A (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ及びその製造方法 |
JP2013066840A Division JP2013128154A (ja) | 2007-04-19 | 2013-03-27 | 発光デバイスパッケージ及びこれを備えるライトユニット |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2010525569A true JP2010525569A (ja) | 2010-07-22 |
Family
ID=39875630
Family Applications (7)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010503977A Withdrawn JP2010525569A (ja) | 2007-04-19 | 2008-04-17 | 発光デバイスパッケージ及びこれを備えるライトユニット |
JP2012000976U Expired - Lifetime JP3175433U (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ |
JP2012037166A Withdrawn JP2012109611A (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ及びその製造方法 |
JP2012037167A Withdrawn JP2012109612A (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ及びその製造方法 |
JP2013066840A Pending JP2013128154A (ja) | 2007-04-19 | 2013-03-27 | 発光デバイスパッケージ及びこれを備えるライトユニット |
JP2015027327A Pending JP2015092639A (ja) | 2007-04-19 | 2015-02-16 | 発光デバイスパッケージ及びこれを備えるライトユニット |
JP2016197934A Pending JP2017011307A (ja) | 2007-04-19 | 2016-10-06 | 発光デバイスパッケージ |
Family Applications After (6)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012000976U Expired - Lifetime JP3175433U (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ |
JP2012037166A Withdrawn JP2012109611A (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ及びその製造方法 |
JP2012037167A Withdrawn JP2012109612A (ja) | 2007-04-19 | 2012-02-23 | 半導体ダイオードパッケージ及びその製造方法 |
JP2013066840A Pending JP2013128154A (ja) | 2007-04-19 | 2013-03-27 | 発光デバイスパッケージ及びこれを備えるライトユニット |
JP2015027327A Pending JP2015092639A (ja) | 2007-04-19 | 2015-02-16 | 発光デバイスパッケージ及びこれを備えるライトユニット |
JP2016197934A Pending JP2017011307A (ja) | 2007-04-19 | 2016-10-06 | 発光デバイスパッケージ |
Country Status (4)
Country | Link |
---|---|
US (12) | US7858993B2 (ja) |
JP (7) | JP2010525569A (ja) |
KR (1) | KR100901618B1 (ja) |
WO (1) | WO2008130140A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176962A (ja) * | 2008-01-24 | 2009-08-06 | Toyoda Gosei Co Ltd | 発光装置 |
JP2013055190A (ja) * | 2011-09-02 | 2013-03-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2013131639A (ja) * | 2011-12-21 | 2013-07-04 | Sumitomo Chemical Co Ltd | 半導体用パッケージの製造方法、半導体用パッケージ及び半導体発光装置 |
WO2015115026A1 (ja) * | 2014-01-30 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 半導体装置及び半導体パッケージ |
JP2021034687A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社ジャパンディスプレイ | Ledモジュール及び表示装置、並びにledモジュールの作製方法及び表示装置の作製方法 |
Families Citing this family (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100901618B1 (ko) * | 2007-04-19 | 2009-06-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 제조방법 |
KR101360732B1 (ko) * | 2007-06-27 | 2014-02-07 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 |
KR101101135B1 (ko) * | 2008-10-01 | 2012-01-05 | 삼성엘이디 주식회사 | 액정고분자를 이용한 발광다이오드 패키지 |
US7923739B2 (en) * | 2009-06-05 | 2011-04-12 | Cree, Inc. | Solid state lighting device |
US8598602B2 (en) * | 2009-01-12 | 2013-12-03 | Cree, Inc. | Light emitting device packages with improved heat transfer |
US9685592B2 (en) * | 2009-01-14 | 2017-06-20 | Cree Huizhou Solid State Lighting Company Limited | Miniature surface mount device with large pin pads |
US8860043B2 (en) * | 2009-06-05 | 2014-10-14 | Cree, Inc. | Light emitting device packages, systems and methods |
US8686445B1 (en) | 2009-06-05 | 2014-04-01 | Cree, Inc. | Solid state lighting devices and methods |
US9111778B2 (en) | 2009-06-05 | 2015-08-18 | Cree, Inc. | Light emitting diode (LED) devices, systems, and methods |
TWI394299B (zh) * | 2009-11-06 | 2013-04-21 | Semileds Optoelectronics Co | 具有外移式電極之垂直發光二極體 |
WO2011091394A1 (en) * | 2010-01-25 | 2011-07-28 | Vishay Sprague, Inc. | Metal based electronic component package and the method of manufacturing the same |
US8525213B2 (en) * | 2010-03-30 | 2013-09-03 | Lg Innotek Co., Ltd. | Light emitting device having multiple cavities and light unit having the same |
KR101081169B1 (ko) * | 2010-04-05 | 2011-11-07 | 엘지이노텍 주식회사 | 발광 소자 및 그 제조방법, 발광 소자 패키지, 조명 시스템 |
JP2011253910A (ja) * | 2010-06-01 | 2011-12-15 | Toshiba Corp | 発光装置 |
KR101859149B1 (ko) | 2011-04-14 | 2018-05-17 | 엘지이노텍 주식회사 | 발광 소자 패키지 |
KR101103674B1 (ko) | 2010-06-01 | 2012-01-11 | 엘지이노텍 주식회사 | 발광 소자 |
US20110303940A1 (en) * | 2010-06-14 | 2011-12-15 | Hyo Jin Lee | Light emitting device package using quantum dot, illumination apparatus and display apparatus |
US8269244B2 (en) | 2010-06-28 | 2012-09-18 | Cree, Inc. | LED package with efficient, isolated thermal path |
US8648359B2 (en) | 2010-06-28 | 2014-02-11 | Cree, Inc. | Light emitting devices and methods |
KR101798231B1 (ko) * | 2010-07-05 | 2017-11-15 | 엘지이노텍 주식회사 | 발광 소자 |
USD643819S1 (en) | 2010-07-16 | 2011-08-23 | Cree, Inc. | Package for light emitting diode (LED) lighting |
MY170920A (en) | 2010-11-02 | 2019-09-17 | Carsem M Sdn Bhd | Leadframe package with recessed cavity for led |
CN102456818A (zh) * | 2010-11-03 | 2012-05-16 | 富士康(昆山)电脑接插件有限公司 | 发光二极管导线架 |
TWI609508B (zh) * | 2010-11-03 | 2017-12-21 | 惠州科銳半導體照明有限公司 | 具有大型接腳墊片的微型表面安裝元件 |
US10267506B2 (en) | 2010-11-22 | 2019-04-23 | Cree, Inc. | Solid state lighting apparatuses with non-uniformly spaced emitters for improved heat distribution, system having the same, and methods having the same |
USD679842S1 (en) | 2011-01-03 | 2013-04-09 | Cree, Inc. | High brightness LED package |
US11101408B2 (en) | 2011-02-07 | 2021-08-24 | Creeled, Inc. | Components and methods for light emitting diode (LED) lighting |
US8610140B2 (en) | 2010-12-15 | 2013-12-17 | Cree, Inc. | Light emitting diode (LED) packages, systems, devices and related methods |
TW201251140A (en) | 2011-01-31 | 2012-12-16 | Cree Inc | High brightness light emitting diode (LED) packages, systems and methods with improved resin filling and high adhesion |
WO2012116470A1 (en) | 2011-03-02 | 2012-09-07 | Cree Huizhou Solid State Lighting Company Limited | Miniature surface mount device |
TW201251132A (en) * | 2011-05-03 | 2012-12-16 | Cree Inc | Light emitting diode (LED) packages, systems, devices and related methods |
US9397274B2 (en) * | 2011-08-24 | 2016-07-19 | Lg Innotek Co., Ltd. | Light emitting device package |
MY156107A (en) | 2011-11-01 | 2016-01-15 | Carsem M Sdn Bhd | Large panel leadframe |
KR101459555B1 (ko) * | 2011-11-02 | 2014-11-07 | 엘지이노텍 주식회사 | 발광 소자 |
JP2013143520A (ja) * | 2012-01-12 | 2013-07-22 | Sony Corp | 撮像装置および撮像装置の製造方法 |
KR20140004881A (ko) * | 2012-07-03 | 2014-01-14 | 삼성디스플레이 주식회사 | 백라이트 유닛 |
TWI485962B (zh) * | 2012-12-22 | 2015-05-21 | Univ Kun Shan | Zero Current Switching Parallel Load Resonant Converter |
KR20150019828A (ko) * | 2013-08-16 | 2015-02-25 | 삼성전자주식회사 | 발광소자 패키지 및 그 제조방법 |
DE102013110355A1 (de) * | 2013-09-19 | 2015-03-19 | Osram Opto Semiconductors Gmbh | Optoelektronisches Halbleiterbauelement und Verfahren zum Herstellen eines Leiterrahmenverbunds |
KR101501020B1 (ko) * | 2014-02-17 | 2015-03-13 | 주식회사 루멘스 | 발광 소자 패키지, 백라이트 유닛, 조명 장치 및 발광 소자 패키지의 제조 방법 |
KR101583561B1 (ko) * | 2014-05-29 | 2016-01-08 | 엘지이노텍 주식회사 | 발광 소자 |
WO2016035508A1 (ja) * | 2014-09-01 | 2016-03-10 | シャープ株式会社 | 発光装置 |
JP6156402B2 (ja) | 2015-02-13 | 2017-07-05 | 日亜化学工業株式会社 | 発光装置 |
JP6206442B2 (ja) * | 2015-04-30 | 2017-10-04 | 日亜化学工業株式会社 | パッケージ及びその製造方法、並びに発光装置 |
JP6862141B2 (ja) * | 2015-10-14 | 2021-04-21 | エルジー イノテック カンパニー リミテッド | 発光素子パッケージ及び照明装置 |
US10024492B1 (en) | 2016-04-07 | 2018-07-17 | Pelco Products, Inc. | Cable-mounted traffic control device support bracket with strut member adapter |
US10193320B1 (en) | 2016-10-10 | 2019-01-29 | Pelco Products, Inc. | Integral terminal compartment with deployable terminal block |
KR102674066B1 (ko) * | 2016-11-11 | 2024-06-13 | 삼성전자주식회사 | 발광 소자 패키지 |
US10401000B1 (en) | 2017-03-01 | 2019-09-03 | Pelco Products, Inc. | Traffic control device with wind dampening backplate assembly |
CN108727813A (zh) * | 2018-05-25 | 2018-11-02 | 郑州智锦电子科技有限公司 | 一种led灯外壳材料 |
DE102019106931A1 (de) | 2019-03-19 | 2020-09-24 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches Halbleiterbauelement, optoelektronische Halbleitervorrichtung und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements |
US11444227B2 (en) | 2019-10-01 | 2022-09-13 | Dominant Opto Technologies Sdn Bhd | Light emitting diode package with substrate configuration having enhanced structural integrity |
US11444225B2 (en) | 2020-09-08 | 2022-09-13 | Dominant Opto Technologies Sdn Bhd | Light emitting diode package having a protective coating |
US11329206B2 (en) | 2020-09-28 | 2022-05-10 | Dominant Opto Technologies Sdn Bhd | Lead frame and housing sub-assembly for use in a light emitting diode package and method for manufacturing the same |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50133873U (ja) * | 1975-04-18 | 1975-11-04 | ||
JPS5396695A (en) * | 1977-02-03 | 1978-08-24 | Toyo Dengu Seisakushiyo Kk | Display |
JPS53145476U (ja) * | 1977-04-20 | 1978-11-16 | ||
JPS5933265U (ja) * | 1982-08-26 | 1984-03-01 | シャープ株式会社 | 発光半導体表示装置 |
JPS60180176A (ja) * | 1984-02-27 | 1985-09-13 | Oki Electric Ind Co Ltd | 光結合半導体装置 |
JPH06204569A (ja) * | 1992-12-28 | 1994-07-22 | Casio Comput Co Ltd | 発光ダイオードの構造 |
JP2000183407A (ja) * | 1998-12-16 | 2000-06-30 | Rohm Co Ltd | 光半導体装置 |
JP2002314142A (ja) * | 2001-04-09 | 2002-10-25 | Toyoda Gosei Co Ltd | 発光装置 |
JP2004063494A (ja) * | 2002-07-24 | 2004-02-26 | Sumitomo Electric Ind Ltd | 発光装置およびその製造方法 |
JP2004146815A (ja) * | 2002-09-30 | 2004-05-20 | Sanyo Electric Co Ltd | 発光素子 |
JP2004235139A (ja) * | 2002-10-01 | 2004-08-19 | Matsushita Electric Ind Co Ltd | 線状光源装置及びその製造方法、並びに、面発光装置 |
JP2004363533A (ja) * | 2003-06-03 | 2004-12-24 | Samsung Electro Mech Co Ltd | 発光ダイオード素子の製造方法 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19829197C2 (de) * | 1998-06-30 | 2002-06-20 | Siemens Ag | Strahlungsaussendendes und/oder -empfangendes Bauelement |
JP2002299698A (ja) | 2001-03-30 | 2002-10-11 | Sumitomo Electric Ind Ltd | 発光装置 |
JP2003152228A (ja) | 2001-11-12 | 2003-05-23 | Sumitomo Bakelite Co Ltd | Led用ケース及びled発光体 |
KR100439402B1 (ko) * | 2001-12-24 | 2004-07-09 | 삼성전기주식회사 | 발광다이오드 패키지 |
US7531844B2 (en) | 2002-09-30 | 2009-05-12 | Sanyo Electric Co., Ltd. | Light emitting element |
JP4009208B2 (ja) | 2003-01-21 | 2007-11-14 | 京セラ株式会社 | 発光装置 |
KR20040073869A (ko) | 2003-02-15 | 2004-08-21 | 엘지전자 주식회사 | 발광 소자의 광 반사체 구조 및 그를 이용한 발광 소자패키지 |
JP4132039B2 (ja) * | 2003-03-24 | 2008-08-13 | 京セラ株式会社 | 発光素子収納用パッケージおよび発光装置 |
DE102004063978B4 (de) * | 2003-07-17 | 2019-01-24 | Toyoda Gosei Co., Ltd. | Lichtemittierende Vorrichtung |
JP2005078937A (ja) | 2003-08-29 | 2005-03-24 | Ichikoh Ind Ltd | 薄型発光装置 |
JP3906199B2 (ja) | 2003-11-27 | 2007-04-18 | 京セラ株式会社 | 発光装置 |
JP4544619B2 (ja) * | 2004-06-08 | 2010-09-15 | ローム株式会社 | 発光ダイオードランプ |
KR101047795B1 (ko) * | 2005-01-05 | 2011-07-07 | 엘지이노텍 주식회사 | 반도체 발광소자 |
JP2006351773A (ja) * | 2005-06-15 | 2006-12-28 | Rohm Co Ltd | 半導体発光装置 |
JP2007027535A (ja) | 2005-07-20 | 2007-02-01 | Stanley Electric Co Ltd | 光半導体装置 |
JP2007042681A (ja) | 2005-07-29 | 2007-02-15 | Toshiba Lighting & Technology Corp | 発光ダイオード装置 |
CN1932603A (zh) * | 2005-09-16 | 2007-03-21 | 鸿富锦精密工业(深圳)有限公司 | 直下式背光模组 |
JP4715422B2 (ja) | 2005-09-27 | 2011-07-06 | 日亜化学工業株式会社 | 発光装置 |
JP5214128B2 (ja) * | 2005-11-22 | 2013-06-19 | シャープ株式会社 | 発光素子及び発光素子を備えたバックライトユニット |
KR100635981B1 (ko) | 2006-01-27 | 2006-10-18 | 알티전자 주식회사 | 측면발광 다이오드 패키지 |
US9178121B2 (en) * | 2006-12-15 | 2015-11-03 | Cree, Inc. | Reflective mounting substrates for light emitting diodes |
EP2112697B1 (en) * | 2006-12-28 | 2020-01-22 | Nichia Corporation | Light emitting device, package, light emitting device manufacturing method, package manufacturing method and package manufacturing die |
US8610143B2 (en) * | 2007-03-12 | 2013-12-17 | Nichia Corporation | High output power light emitting device and package used therefor |
KR100901618B1 (ko) * | 2007-04-19 | 2009-06-08 | 엘지이노텍 주식회사 | 발광 다이오드 패키지 및 제조방법 |
US8030674B2 (en) * | 2008-04-28 | 2011-10-04 | Lextar Electronics Corp. | Light-emitting diode package with roughened surface portions of the lead-frame |
-
2007
- 2007-04-19 KR KR1020070038279A patent/KR100901618B1/ko active IP Right Grant
-
2008
- 2008-04-17 US US12/530,637 patent/US7858993B2/en active Active
- 2008-04-17 JP JP2010503977A patent/JP2010525569A/ja not_active Withdrawn
- 2008-04-17 WO PCT/KR2008/002183 patent/WO2008130140A1/en active Application Filing
-
2010
- 2010-11-16 US US12/947,645 patent/US8022415B2/en not_active Expired - Fee Related
-
2011
- 2011-05-24 US US13/115,028 patent/US8101956B2/en not_active Expired - Fee Related
- 2011-12-30 US US13/341,680 patent/US8299474B2/en active Active
-
2012
- 2012-02-23 JP JP2012000976U patent/JP3175433U/ja not_active Expired - Lifetime
- 2012-02-23 JP JP2012037166A patent/JP2012109611A/ja not_active Withdrawn
- 2012-02-23 JP JP2012037167A patent/JP2012109612A/ja not_active Withdrawn
- 2012-10-28 US US13/662,508 patent/US8536586B2/en active Active
-
2013
- 2013-03-27 JP JP2013066840A patent/JP2013128154A/ja active Pending
- 2013-08-23 US US13/975,029 patent/US8692262B2/en active Active
-
2014
- 2014-01-31 US US14/169,581 patent/US8890176B2/en active Active
- 2014-10-06 US US14/507,488 patent/US9018644B2/en active Active
- 2014-10-08 US US14/509,321 patent/US8994038B2/en active Active
-
2015
- 2015-02-16 JP JP2015027327A patent/JP2015092639A/ja active Pending
- 2015-03-04 US US14/638,398 patent/US9252347B2/en not_active Expired - Fee Related
- 2015-12-29 US US14/983,294 patent/US9559275B2/en active Active
-
2016
- 2016-10-06 JP JP2016197934A patent/JP2017011307A/ja active Pending
- 2016-12-16 US US15/382,553 patent/US9666775B2/en active Active
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS50133873U (ja) * | 1975-04-18 | 1975-11-04 | ||
JPS5396695A (en) * | 1977-02-03 | 1978-08-24 | Toyo Dengu Seisakushiyo Kk | Display |
JPS53145476U (ja) * | 1977-04-20 | 1978-11-16 | ||
JPS5933265U (ja) * | 1982-08-26 | 1984-03-01 | シャープ株式会社 | 発光半導体表示装置 |
JPS60180176A (ja) * | 1984-02-27 | 1985-09-13 | Oki Electric Ind Co Ltd | 光結合半導体装置 |
JPH06204569A (ja) * | 1992-12-28 | 1994-07-22 | Casio Comput Co Ltd | 発光ダイオードの構造 |
JP2000183407A (ja) * | 1998-12-16 | 2000-06-30 | Rohm Co Ltd | 光半導体装置 |
JP2002314142A (ja) * | 2001-04-09 | 2002-10-25 | Toyoda Gosei Co Ltd | 発光装置 |
JP2004063494A (ja) * | 2002-07-24 | 2004-02-26 | Sumitomo Electric Ind Ltd | 発光装置およびその製造方法 |
JP2004146815A (ja) * | 2002-09-30 | 2004-05-20 | Sanyo Electric Co Ltd | 発光素子 |
JP2004235139A (ja) * | 2002-10-01 | 2004-08-19 | Matsushita Electric Ind Co Ltd | 線状光源装置及びその製造方法、並びに、面発光装置 |
JP2004363533A (ja) * | 2003-06-03 | 2004-12-24 | Samsung Electro Mech Co Ltd | 発光ダイオード素子の製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009176962A (ja) * | 2008-01-24 | 2009-08-06 | Toyoda Gosei Co Ltd | 発光装置 |
JP2013055190A (ja) * | 2011-09-02 | 2013-03-21 | Nichia Chem Ind Ltd | 発光装置 |
JP2013131639A (ja) * | 2011-12-21 | 2013-07-04 | Sumitomo Chemical Co Ltd | 半導体用パッケージの製造方法、半導体用パッケージ及び半導体発光装置 |
WO2015115026A1 (ja) * | 2014-01-30 | 2015-08-06 | パナソニックIpマネジメント株式会社 | 半導体装置及び半導体パッケージ |
JP2021034687A (ja) * | 2019-08-29 | 2021-03-01 | 株式会社ジャパンディスプレイ | Ledモジュール及び表示装置、並びにledモジュールの作製方法及び表示装置の作製方法 |
JP7349294B2 (ja) | 2019-08-29 | 2023-09-22 | 株式会社ジャパンディスプレイ | Ledモジュール及び表示装置 |
Also Published As
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3175433U (ja) | 半導体ダイオードパッケージ | |
JP2012134531A (ja) | 発光装置 | |
JP2011205100A (ja) | 発光素子パッケージ及びこれを備えた照明システム | |
US8783933B2 (en) | Light emitting device package, and display apparatus and lighting system having the same | |
KR20120132931A (ko) | 발광소자패키지 | |
JP6064396B2 (ja) | 発光装置 | |
KR101047676B1 (ko) | 발광 장치 및 이를 구비한 라이트 유닛 | |
KR100737822B1 (ko) | 고광택 도금층을 구비하는 리드프레임을 채택한 발광다이오드 패키지 | |
KR20130014898A (ko) | 발광소자 패키지 | |
KR20120136043A (ko) | 발광소자 패키지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110228 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20120322 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120326 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120508 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120808 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20121005 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20121127 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130327 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130508 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20130513 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20130614 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20131209 |
|
A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20140312 |