JP2010520614A - 画素間分離されたイメージセンサ - Google Patents
画素間分離されたイメージセンサ Download PDFInfo
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- JP2010520614A JP2010520614A JP2009551287A JP2009551287A JP2010520614A JP 2010520614 A JP2010520614 A JP 2010520614A JP 2009551287 A JP2009551287 A JP 2009551287A JP 2009551287 A JP2009551287 A JP 2009551287A JP 2010520614 A JP2010520614 A JP 2010520614A
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- photodiode
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- 238000000926 separation method Methods 0.000 title claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 30
- 238000002955 isolation Methods 0.000 claims abstract description 5
- 230000004888 barrier function Effects 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 16
- 239000000758 substrate Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
[発明の分野]
ここに開示する主題は、該して、半導体イメージセンサの分野に関するものである。
デジタルカメラおよびデジタルビデオカメラといった写真機材は、電子イメージセンサを含み、電子イメージセンサはそれぞれ、静止画像に処理するため、または、ビデオ画像に処理するための光を捕獲する。これらの電子イメージセンサは、典型的には、何百万もの光捕獲素子、例えばフォトダイオードを含む。フォトダイオードは、二次元の画素アレイに配置されている。
フォトダイオードアレイを有するイメージセンサであり、各フォトダイオードは、第1の型の材料から構成される第1の領域と、第2の型の材料から構成される第2の領域とを有する。第1の領域と第2の領域との間には、分離領域が位置している。第2の領域は、上記フォトダイオードアレイのコーナー領域において、分離領域からオフセットして配置されている。
[図面の簡単な説明]
図1は、従来技術のイメージセンサを示す図である。
Claims (8)
- 複数のフォトダイオードを含む画素アレイを有するイメージセンサにおいて、
上記画素アレイのコーナー領域における各フォトダイオードは、
第1の型の材料から構成される第1の領域と、
上記第1の領域に隣接した分離領域と、
第2の型の材料から構成されると共に上記分離領域からオフセットして配置された第2の領域とを含むイメージセンサ。 - 上記第1の型の材料から構成されると共に、上記第1の領域の真下、かつ隣接し合うフォトダイオードの第2の領域間に位置するバリア領域をさらに含み、上記バリア領域は、上記コーナー領域におけるフォトダイオードにおいて、上記第1の領域からオフセットして配置されている、請求項1に記載のイメージセンサ。
- 上記第1の型の材料はp型材料であり、上記第2の型の材料はn型材料である、請求項1に記載のイメージセンサ。
- 上記第2の領域は、0.5μmだけオフセットして配置されている、請求項1に記載のイメージセンサ。
- 第1の領域を形成する工程と、
上記第1の領域に隣接して分離領域を形成する工程と、
上記分離領域からオフセットして配置される第2の領域を形成する工程とを含む、イメージセンサの複数のフォトダイオードを形成する方法。 - 上記第1の領域からオフセットして配置されるバリア領域を形成する工程をさらに含む、請求項5に記載の方法。
- 上記第2の領域を0.5μmだけオフセットして配置する、請求項5に記載の方法。
- 上記第1の型の材料はp型材料であり、上記第2の型の材料はn型材料である、請求項5に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/713,301 | 2007-03-01 | ||
US11/713,301 US20080211050A1 (en) | 2007-03-01 | 2007-03-01 | Image sensor with inter-pixel isolation |
PCT/IB2008/001791 WO2008125986A2 (en) | 2007-03-01 | 2008-02-29 | Image sensor with position dependent shift of inter-pixel isolation structure |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010520614A true JP2010520614A (ja) | 2010-06-10 |
JP2010520614A5 JP2010520614A5 (ja) | 2012-03-29 |
JP5435640B2 JP5435640B2 (ja) | 2014-03-05 |
Family
ID=39732470
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009551287A Expired - Fee Related JP5435640B2 (ja) | 2007-03-01 | 2008-02-29 | 画素間分離されたイメージセンサ |
Country Status (9)
Country | Link |
---|---|
US (2) | US20080211050A1 (ja) |
JP (1) | JP5435640B2 (ja) |
CN (1) | CN101675523B (ja) |
BR (1) | BRPI0815520A2 (ja) |
DE (1) | DE112008000500B4 (ja) |
ES (1) | ES2334766B1 (ja) |
GB (1) | GB2460010B (ja) |
MX (1) | MX2009009322A (ja) |
WO (1) | WO2008125986A2 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009212465A (ja) * | 2008-03-06 | 2009-09-17 | Canon Inc | 撮像装置及び撮像システム |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7902618B2 (en) * | 2008-11-17 | 2011-03-08 | Omni Vision Technologies, Inc. | Backside illuminated imaging sensor with improved angular response |
WO2011030413A1 (ja) * | 2009-09-09 | 2011-03-17 | 株式会社 東芝 | 固体撮像装置およびその製造方法 |
CN117178367A (zh) * | 2021-12-10 | 2023-12-05 | 华为技术有限公司 | 宽带图像装置及其制造方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233747A (ja) * | 1998-02-13 | 1999-08-27 | Toshiba Corp | Mosイメージセンサ |
JPH11274456A (ja) * | 1998-03-19 | 1999-10-08 | Toshiba Corp | 固体撮像装置 |
JPH11284168A (ja) * | 1998-03-31 | 1999-10-15 | Toshiba Corp | 固体撮像装置 |
JP2003507902A (ja) * | 1999-07-20 | 2003-02-25 | インスティチュート フュア ミクロエレクトロニク シュトゥットガルト | イメージ・セル、イメージ・センサおよびその製造方法 |
JP2004134790A (ja) * | 2002-09-20 | 2004-04-30 | Sony Corp | 固体撮像装置及びその製造方法並びに電子機器 |
JP2006024907A (ja) * | 2004-06-07 | 2006-01-26 | Canon Inc | 固体撮像装置 |
JP2006216577A (ja) * | 2005-02-01 | 2006-08-17 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2006279048A (ja) * | 2005-03-28 | 2006-10-12 | Samsung Electronics Co Ltd | イメージセンサ及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6169318B1 (en) * | 1998-02-23 | 2001-01-02 | Polaroid Corporation | CMOS imager with improved sensitivity |
US6507059B2 (en) * | 2001-06-19 | 2003-01-14 | United Microelectronics Corp. | Structure of a CMOS image sensor |
KR20030010148A (ko) * | 2001-07-25 | 2003-02-05 | 주식회사 하이닉스반도체 | 이미지 센서 |
US6909162B2 (en) * | 2001-11-02 | 2005-06-21 | Omnivision Technologies, Inc. | Surface passivation to reduce dark current in a CMOS image sensor |
US6795117B2 (en) * | 2001-11-06 | 2004-09-21 | Candela Microsystems, Inc. | CMOS image sensor with noise cancellation |
US7420231B2 (en) * | 2002-09-20 | 2008-09-02 | Sony Corporation | Solid state imaging pick-up device and method of manufacturing the same |
US7091536B2 (en) * | 2002-11-14 | 2006-08-15 | Micron Technology, Inc. | Isolation process and structure for CMOS imagers |
JP2004207455A (ja) * | 2002-12-25 | 2004-07-22 | Trecenti Technologies Inc | フォトダイオードおよびイメージセンサ |
US7087944B2 (en) * | 2003-01-16 | 2006-08-08 | Micron Technology, Inc. | Image sensor having a charge storage region provided within an implant region |
KR100659503B1 (ko) * | 2004-07-27 | 2006-12-20 | 삼성전자주식회사 | 광감도를 개선한 이미지 센서 |
US20060255372A1 (en) * | 2005-05-16 | 2006-11-16 | Micron Technology, Inc. | Color pixels with anti-blooming isolation and method of formation |
US7253461B2 (en) * | 2005-05-27 | 2007-08-07 | Dialog Imaging Systems Gmbh | Snapshot CMOS image sensor with high shutter rejection ratio |
US20070029580A1 (en) * | 2005-08-08 | 2007-02-08 | Tsuan-Lun Lung | Image-processing unit |
US7964928B2 (en) * | 2005-11-22 | 2011-06-21 | Stmicroelectronics S.A. | Photodetector with an improved resolution |
US7442974B2 (en) * | 2006-01-31 | 2008-10-28 | Hiok Nam Tay | Image sensor with inter-pixel isolation |
-
2007
- 2007-03-01 US US11/713,301 patent/US20080211050A1/en not_active Abandoned
-
2008
- 2008-02-28 ES ES200990014A patent/ES2334766B1/es not_active Expired - Fee Related
- 2008-02-29 MX MX2009009322A patent/MX2009009322A/es active IP Right Grant
- 2008-02-29 JP JP2009551287A patent/JP5435640B2/ja not_active Expired - Fee Related
- 2008-02-29 BR BRPI0815520-8A2A patent/BRPI0815520A2/pt not_active IP Right Cessation
- 2008-02-29 GB GB0917164A patent/GB2460010B/en not_active Expired - Fee Related
- 2008-02-29 DE DE112008000500T patent/DE112008000500B4/de not_active Expired - Fee Related
- 2008-02-29 WO PCT/IB2008/001791 patent/WO2008125986A2/en active Application Filing
- 2008-02-29 CN CN2008800068242A patent/CN101675523B/zh not_active Expired - Fee Related
-
2010
- 2010-11-23 US US12/952,221 patent/US20110068430A1/en not_active Abandoned
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH11233747A (ja) * | 1998-02-13 | 1999-08-27 | Toshiba Corp | Mosイメージセンサ |
JPH11274456A (ja) * | 1998-03-19 | 1999-10-08 | Toshiba Corp | 固体撮像装置 |
JPH11284168A (ja) * | 1998-03-31 | 1999-10-15 | Toshiba Corp | 固体撮像装置 |
JP2003507902A (ja) * | 1999-07-20 | 2003-02-25 | インスティチュート フュア ミクロエレクトロニク シュトゥットガルト | イメージ・セル、イメージ・センサおよびその製造方法 |
JP2004134790A (ja) * | 2002-09-20 | 2004-04-30 | Sony Corp | 固体撮像装置及びその製造方法並びに電子機器 |
JP2006024907A (ja) * | 2004-06-07 | 2006-01-26 | Canon Inc | 固体撮像装置 |
JP2006216577A (ja) * | 2005-02-01 | 2006-08-17 | Sony Corp | 固体撮像装置及びその製造方法 |
JP2006279048A (ja) * | 2005-03-28 | 2006-10-12 | Samsung Electronics Co Ltd | イメージセンサ及びその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009212465A (ja) * | 2008-03-06 | 2009-09-17 | Canon Inc | 撮像装置及び撮像システム |
Also Published As
Publication number | Publication date |
---|---|
GB2460010A8 (en) | 2009-12-02 |
US20110068430A1 (en) | 2011-03-24 |
MX2009009322A (es) | 2009-09-11 |
BRPI0815520A2 (pt) | 2015-02-03 |
CN101675523A (zh) | 2010-03-17 |
WO2008125986A2 (en) | 2008-10-23 |
JP5435640B2 (ja) | 2014-03-05 |
US20080211050A1 (en) | 2008-09-04 |
CN101675523B (zh) | 2012-06-20 |
ES2334766A1 (es) | 2010-03-15 |
DE112008000500T5 (de) | 2010-04-08 |
WO2008125986A3 (en) | 2008-12-24 |
GB2460010B (en) | 2011-08-17 |
GB0917164D0 (en) | 2009-11-11 |
GB2460010A (en) | 2009-11-18 |
DE112008000500B4 (de) | 2013-08-14 |
ES2334766B1 (es) | 2010-12-07 |
WO2008125986A4 (en) | 2009-05-07 |
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