JP2010519739A - バウ状ウェハのハイブリッド化補完 - Google Patents
バウ状ウェハのハイブリッド化補完 Download PDFInfo
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- 235000012431 wafers Nutrition 0.000 title claims abstract description 119
- 230000000295 complement effect Effects 0.000 title 1
- 238000009396 hybridization Methods 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 62
- 239000000463 material Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims description 6
- 238000009499 grossing Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 239000011343 solid material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000009969 flowable effect Effects 0.000 claims description 2
- 238000005498 polishing Methods 0.000 description 8
- 239000011295 pitch Substances 0.000 description 5
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- BGTFCAQCKWKTRL-YDEUACAXSA-N chembl1095986 Chemical compound C1[C@@H](N)[C@@H](O)[C@H](C)O[C@H]1O[C@@H]([C@H]1C(N[C@H](C2=CC(O)=CC(O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O)=C2C=2C(O)=CC=C(C=2)[C@@H](NC(=O)[C@@H]2NC(=O)[C@@H]3C=4C=C(C(=C(O)C=4)C)OC=4C(O)=CC=C(C=4)[C@@H](N)C(=O)N[C@@H](C(=O)N3)[C@H](O)C=3C=CC(O4)=CC=3)C(=O)N1)C(O)=O)=O)C(C=C1)=CC=C1OC1=C(O[C@@H]3[C@H]([C@H](O)[C@@H](O)[C@H](CO[C@@H]5[C@H]([C@@H](O)[C@H](O)[C@@H](C)O5)O)O3)O[C@@H]3[C@H]([C@@H](O)[C@H](O)[C@@H](CO)O3)O[C@@H]3[C@H]([C@H](O)[C@@H](CO)O3)O)C4=CC2=C1 BGTFCAQCKWKTRL-YDEUACAXSA-N 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
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Abstract
Description
Claims (16)
- 高さのある接点を面上に有する非平面状ウェハに対して行われる平坦化方法であって、前記ウェハは前記高さを超える分だけ平面から偏っており、前記方法は:
前記ウェハの前記面に材料を塗付する工程であって、前記材料は平面からの前記偏りを超える厚さとなる工程と;
前記材料を貫通して前記面上の接続点まで延びる開口を前記材料に形成する工程と;
前記開口を導電性材料で充填する工程と;
前記材料および導電性材料を実質的に平面状になるまで平滑化する工程と;
前記材料を除去する工程とを備える;
方法。 - 前記材料の除去により露出したポストを使用して、チップを前記ウェハに接合し、前記ウェハと前記チップとの間の電気接続を形成する工程を更に備える;
請求項1の方法。 - 前記接合は、ポスト−ペネトレーション接続を形成する工程を備える;
請求項2の方法。 - 前記材料の除去により露出したポストを使用して、他のウェハを前記ウェハに接合し、前記ウェハ間に電気接続を形成する工程を更に備える;
請求項1の方法。 - 前記ウェハの面に前記材料を塗付する工程は、前記面に流動性材料を塗付する工程を備える;
請求項1の方法。 - 前記ウェハの面に前記材料を塗付する工程は、前記面に固体材料を塗付する工程を備える;
請求項1の方法。 - 高さのある接点を面上に有する非平面状ウェハに対して行われる平坦化方法であって、前記ウェハは前記高さを超える分だけ平面から偏っており、前記方法は:
前記面から、前記面に配置される除去可能な材料を貫通して延びる複数の導電性ポストを形成する工程であって、前記ポストの各々は、各ポストの上面が前記ウェハに対して最大の偏り点を規定する平面の上方に位置するような長さを有する工程と;
前記材料およびポストを同時に平滑化して、前記面の上方に実質的に平面状の表面を形成する工程と;
前記材料を除去する工程とを備える;
方法。 - 前記ポストを使用して前記ウェハ上に他のウェハをスタックし、前記ウェハ間に電気接続を形成する工程を更に備える;
請求項7の方法。 - 前記ポストを使用して前記ウェハ上にチップをスタックして、前記ウェハと前記チップとの間に電気接続を形成する工程を更に備える;
請求項7の方法。 - 接点を上に有する非平面状ウェハであって、前記ウェハはウェハ上の少なくとも1つの接点の高さを超える分だけ平面から偏っている、非平面状ウェハと;
前記ウェハの表面から離れるように延びる一連の導電性ポストであって、前記ポストの各々は遠位端を有し、前記ポストの前記遠位端が実質的に平坦な面を集合的に画成する導電性ポストとを備える;
装置。 - 前記ポストが、導電性材料を備える;
請求項10の装置。 - 前記ポストが、金属を備える;
請求項11の装置。 - 前記ウェハが、半導体材料を備える;
請求項10の装置。 - 前記ウェハが、セラミックを備える;
請求項10の装置。 - 前記ポストのうちの少なくとも1つは、前記偏りより大きい、前記遠位端から前記ウェハの表面までの長さを有する、
請求項10の装置。 - 前記ポストのうちの少なくとも1つは、前記偏りに等しい、前記遠位端から前記ウェハの表面までの長さを有する、
請求項10の装置。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/675,453 | 2007-02-15 | ||
US11/675,453 US7803693B2 (en) | 2007-02-15 | 2007-02-15 | Bowed wafer hybridization compensation |
PCT/US2008/053991 WO2008101099A1 (en) | 2007-02-15 | 2008-02-14 | Bowed wafer hybridization compensation |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010519739A true JP2010519739A (ja) | 2010-06-03 |
JP2010519739A5 JP2010519739A5 (ja) | 2010-10-28 |
JP5296712B2 JP5296712B2 (ja) | 2013-09-25 |
Family
ID=39431144
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009549724A Active JP5296712B2 (ja) | 2007-02-15 | 2008-02-14 | バウ状ウェハのハイブリッド化補完 |
Country Status (6)
Country | Link |
---|---|
US (1) | US7803693B2 (ja) |
EP (1) | EP2122675A1 (ja) |
JP (1) | JP5296712B2 (ja) |
KR (1) | KR101169511B1 (ja) |
CN (1) | CN101632161B (ja) |
WO (1) | WO2008101099A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2018061394A1 (ja) * | 2016-09-27 | 2018-04-05 | 株式会社村田製作所 | 電子部品 |
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TWI822659B (zh) | 2016-10-27 | 2023-11-21 | 美商艾德亞半導體科技有限責任公司 | 用於低溫接合的結構和方法 |
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US20080197488A1 (en) | 2008-08-21 |
CN101632161B (zh) | 2012-05-09 |
JP5296712B2 (ja) | 2013-09-25 |
WO2008101099A1 (en) | 2008-08-21 |
US7803693B2 (en) | 2010-09-28 |
EP2122675A1 (en) | 2009-11-25 |
KR20090118970A (ko) | 2009-11-18 |
KR101169511B1 (ko) | 2012-07-27 |
CN101632161A (zh) | 2010-01-20 |
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