JP2010512650A - 乾燥フォトレジスト除去プロセスと装置 - Google Patents

乾燥フォトレジスト除去プロセスと装置 Download PDF

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Publication number
JP2010512650A
JP2010512650A JP2009540518A JP2009540518A JP2010512650A JP 2010512650 A JP2010512650 A JP 2010512650A JP 2009540518 A JP2009540518 A JP 2009540518A JP 2009540518 A JP2009540518 A JP 2009540518A JP 2010512650 A JP2010512650 A JP 2010512650A
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JP
Japan
Prior art keywords
chamber
substrate
photoresist
layer
removal
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JP2009540518A
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English (en)
Japanese (ja)
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JP2010512650A5 (enExample
Inventor
ソン−ミ チョー，
マジード， エー． フォード，
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2010512650A publication Critical patent/JP2010512650A/ja
Publication of JP2010512650A5 publication Critical patent/JP2010512650A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2009540518A 2006-12-11 2007-12-10 乾燥フォトレジスト除去プロセスと装置 Pending JP2010512650A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86955406P 2006-12-11 2006-12-11
PCT/US2007/087008 WO2008073906A2 (en) 2006-12-11 2007-12-10 Dry photoresist stripping process and apparatus

Publications (2)

Publication Number Publication Date
JP2010512650A true JP2010512650A (ja) 2010-04-22
JP2010512650A5 JP2010512650A5 (enExample) 2010-12-02

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JP2009540518A Pending JP2010512650A (ja) 2006-12-11 2007-12-10 乾燥フォトレジスト除去プロセスと装置

Country Status (6)

Country Link
US (1) US20080153306A1 (enExample)
JP (1) JP2010512650A (enExample)
KR (1) KR20090094368A (enExample)
CN (1) CN101542693A (enExample)
TW (1) TW200834265A (enExample)
WO (1) WO2008073906A2 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
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JP2014507073A (ja) * 2011-02-22 2014-03-20 アプライド マテリアルズ インコーポレイテッド 遠隔励起式のフッ素および水蒸気エッチング

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