CN101542693A - 干式光阻剥除方法及设备 - Google Patents

干式光阻剥除方法及设备 Download PDF

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Publication number
CN101542693A
CN101542693A CNA2007800441125A CN200780044112A CN101542693A CN 101542693 A CN101542693 A CN 101542693A CN A2007800441125 A CNA2007800441125 A CN A2007800441125A CN 200780044112 A CN200780044112 A CN 200780044112A CN 101542693 A CN101542693 A CN 101542693A
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CN
China
Prior art keywords
chamber
base material
photoresistance
outer shell
photoresist layer
Prior art date
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Pending
Application number
CNA2007800441125A
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English (en)
Chinese (zh)
Inventor
塞奥-米·乔
马耶德·A·福阿德
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Applied Materials Inc
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Applied Materials Inc
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Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN101542693A publication Critical patent/CN101542693A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/427—Stripping or agents therefor using plasma means only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H01L21/31138—Etching organic layers by chemical means by dry-etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Plasma & Fusion (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CNA2007800441125A 2006-12-11 2007-12-10 干式光阻剥除方法及设备 Pending CN101542693A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US86955406P 2006-12-11 2006-12-11
US60/869,554 2006-12-11

Publications (1)

Publication Number Publication Date
CN101542693A true CN101542693A (zh) 2009-09-23

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Family Applications (1)

Application Number Title Priority Date Filing Date
CNA2007800441125A Pending CN101542693A (zh) 2006-12-11 2007-12-10 干式光阻剥除方法及设备

Country Status (6)

Country Link
US (1) US20080153306A1 (enExample)
JP (1) JP2010512650A (enExample)
KR (1) KR20090094368A (enExample)
CN (1) CN101542693A (enExample)
TW (1) TW200834265A (enExample)
WO (1) WO2008073906A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101898391A (zh) * 2010-08-19 2010-12-01 英利能源（中国）有限公司 硅块脱胶系统和脱胶方法
CN109698126A (zh) * 2018-12-24 2019-04-30 上海华力集成电路制造有限公司 改善硅针孔缺陷的方法

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CN109698126A (zh) * 2018-12-24 2019-04-30 上海华力集成电路制造有限公司 改善硅针孔缺陷的方法

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