JP2010507559A5 - - Google Patents

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Publication number
JP2010507559A5
JP2010507559A5 JP2009534570A JP2009534570A JP2010507559A5 JP 2010507559 A5 JP2010507559 A5 JP 2010507559A5 JP 2009534570 A JP2009534570 A JP 2009534570A JP 2009534570 A JP2009534570 A JP 2009534570A JP 2010507559 A5 JP2010507559 A5 JP 2010507559A5
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JP
Japan
Prior art keywords
neopentasilane
composition
trihalosilyl
silane
tetrakis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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JP2009534570A
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English (en)
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JP2010507559A (ja
JP5103480B2 (ja
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Priority claimed from PCT/US2007/019165 external-priority patent/WO2008051328A1/en
Publication of JP2010507559A publication Critical patent/JP2010507559A/ja
Publication of JP2010507559A5 publication Critical patent/JP2010507559A5/ja
Application granted granted Critical
Publication of JP5103480B2 publication Critical patent/JP5103480B2/ja
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Claims (5)

  1. 組成物であって、
    少なくとも93%(w/w)のネオペンタシランと、
    5%(w/w)以下の他のシランと、
    2%(w/w)以下の炭化水素と、
    を含む、組成物。
  2. 少なくとも97%(w/w)のネオペンタシランを含む、請求項1に記載の組成物。
  3. ネオペンタシランを含む組成物を製造する方法であって、
    (i)式X3SiSiX3(式中、Xは−Cl又は−Brである)を有するヘキサハロジシランを第三級アミン触媒で処理して、テトラキス(トリハロシリル)シランと四ハロゲン化ケイ素とを含む第1の混合物を生成すること、
    (ii)該テトラキス(トリハロシリル)シランと該四ハロゲン化ケイ素とを分離すること、
    (iii)分離した該テトラキス(トリハロシリル)シランを水素化ジイソブチルアルミニウムで処理して、ネオペンタシランを含む第2の混合物を生成すること、及び
    (iv)該第2の混合物を蒸留して、該ネオペンタシランを取り出すこと、
    を含む、ネオペンタシランを含む組成物を製造する方法。
  4. 前記第三級アミン触媒が1,4−ジアザビシクロ[2.2.2]オクタンである、請求項に記載の方法。
  5. 前記テトラキス(トリハロシリル)シランに対する前記水素化ジイソブチルアルミニウムのモル比が12〜14である、請求項に記載の方法。
JP2009534570A 2006-10-24 2007-08-29 ネオペンタシランを含む組成物及びその製造方法 Active JP5103480B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US85395806P 2006-10-24 2006-10-24
US60/853,958 2006-10-24
PCT/US2007/019165 WO2008051328A1 (en) 2006-10-24 2007-08-29 Composition comprising neopentasilane and method of preparing same

Publications (3)

Publication Number Publication Date
JP2010507559A JP2010507559A (ja) 2010-03-11
JP2010507559A5 true JP2010507559A5 (ja) 2011-08-25
JP5103480B2 JP5103480B2 (ja) 2012-12-19

Family

ID=38896166

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009534570A Active JP5103480B2 (ja) 2006-10-24 2007-08-29 ネオペンタシランを含む組成物及びその製造方法

Country Status (7)

Country Link
US (1) US8147789B2 (ja)
EP (1) EP2076558B8 (ja)
JP (1) JP5103480B2 (ja)
KR (1) KR101506136B1 (ja)
CN (1) CN101528813B (ja)
TW (1) TWI412530B (ja)
WO (1) WO2008051328A1 (ja)

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DE102008042934A1 (de) 2008-10-17 2010-04-22 Wacker Chemie Ag Verfahren zur Herstellung von Neopentasilanen
DE102009027194A1 (de) * 2009-06-25 2010-12-30 Wacker Chemie Ag Verfahren zur Herstellung von Dodecahalogenneopentasilanen
DE102009053804B3 (de) * 2009-11-18 2011-03-17 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
DE102009056731A1 (de) 2009-12-04 2011-06-09 Rev Renewable Energy Ventures, Inc. Halogenierte Polysilane und Polygermane
TWI559372B (zh) 2010-04-06 2016-11-21 薄膜電子Asa公司 磊晶結構、其形成方法及含此結構之元件
DE102010062984A1 (de) * 2010-12-14 2012-06-14 Evonik Degussa Gmbh Verfahren zur Herstellung höherer Halogen- und Hydridosilane
DE102010063823A1 (de) * 2010-12-22 2012-06-28 Evonik Degussa Gmbh Verfahren zur Herstellung von Hydridosilanen
TW201300459A (zh) * 2011-03-10 2013-01-01 Dow Corning 用於抗反射塗層的聚矽烷矽氧烷(polysilanesiloxane)樹脂
DE102011005387A1 (de) 2011-03-10 2012-09-13 Wacker Chemie Ag Verfahren zur Reduzierung des Aluminiumgehaltes von Neopentasilan
DE102012224202A1 (de) 2012-12-21 2014-07-10 Evonik Industries Ag Verfahren zum Hydrieren höherer Halogen-haltiger Silanverbindungen
TWI634073B (zh) * 2013-09-05 2018-09-01 道康寧公司 2,2,4,4-四矽基五矽烷及其組成物、方法及用途
US11091649B2 (en) 2013-09-05 2021-08-17 Jiangsu Nata Opto-Electronic Materials Co. Ltd. 2,2,4,4-tetrasilylpentasilane and its compositions, methods and uses
DE102014018435A1 (de) * 2014-12-10 2016-06-16 Silicon Products Bitterfeld GmbH&CO.KG Verfahren zur Gewinnung von Hexachlordisilan aus in Prozessabgasströmen enthaltenen Gemischen von Chlorsilanen
US11117807B2 (en) * 2017-06-23 2021-09-14 Jiangsu Nata Opto-Electronic Materials Co. Ltd. Method of making aluminum-free neopentasilane
CN110997683B (zh) * 2017-06-29 2023-03-31 南大光电半导体材料有限公司 1,1,1-三氯乙硅烷的合成
KR20190101001A (ko) 2018-02-22 2019-08-30 박계균 주열식 가설 흙막이 벽체의 시공방법
EP3587348B1 (en) * 2018-06-29 2021-08-11 Evonik Operations GmbH Partially hydrogenated chlorosilanes and methods for preparing same by selective hydrogenation
CN115417413B (zh) * 2022-08-31 2024-01-09 南大光电半导体材料有限公司 一种新戊硅烷中间体制备方法及其应用

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JPH0760792B2 (ja) 1984-05-16 1995-06-28 キヤノン株式会社 堆積膜の形成方法
JPS6191010A (ja) 1984-10-09 1986-05-09 Canon Inc 堆積膜形成法
JP3517934B2 (ja) * 1994-03-24 2004-04-12 昭和電工株式会社 シリコン膜の形成方法
EP0902030B1 (en) * 1997-08-27 2002-10-02 Dow Corning Corporation Compounds containing tetradecachlorocyclohexasilane dianion
JPH11260729A (ja) * 1998-01-08 1999-09-24 Showa Denko Kk 高次シランの製造法
KR100731558B1 (ko) * 2000-08-02 2007-06-22 미쯔비시 마테리알 폴리실리콘 가부시끼가이샤 육염화이규소의 제조 방법
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