JP2010503217A5 - - Google Patents

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Publication number
JP2010503217A5
JP2010503217A5 JP2009526823A JP2009526823A JP2010503217A5 JP 2010503217 A5 JP2010503217 A5 JP 2010503217A5 JP 2009526823 A JP2009526823 A JP 2009526823A JP 2009526823 A JP2009526823 A JP 2009526823A JP 2010503217 A5 JP2010503217 A5 JP 2010503217A5
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JP
Japan
Prior art keywords
series
transistor
circuit
terminal
coupled
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JP2009526823A
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English (en)
Japanese (ja)
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JP2010503217A (ja
JP5497437B2 (ja
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Priority claimed from US11/512,951 external-priority patent/US8144441B2/en
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Publication of JP2010503217A5 publication Critical patent/JP2010503217A5/ja
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Publication of JP5497437B2 publication Critical patent/JP5497437B2/ja
Expired - Fee Related legal-status Critical Current
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JP2009526823A 2006-08-30 2007-08-24 化合物半導体素子および回路のための静電放電保護回路 Expired - Fee Related JP5497437B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/512,951 US8144441B2 (en) 2006-08-30 2006-08-30 Electrostatic discharge protection circuit for compound semiconductor devices and circuits
US11/512,951 2006-08-30
PCT/US2007/076724 WO2008027802A2 (en) 2006-08-30 2007-08-24 Electrostatic discharge protection circuit for compound semiconductor devices and circuits

Publications (3)

Publication Number Publication Date
JP2010503217A JP2010503217A (ja) 2010-01-28
JP2010503217A5 true JP2010503217A5 (enExample) 2010-10-14
JP5497437B2 JP5497437B2 (ja) 2014-05-21

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Application Number Title Priority Date Filing Date
JP2009526823A Expired - Fee Related JP5497437B2 (ja) 2006-08-30 2007-08-24 化合物半導体素子および回路のための静電放電保護回路

Country Status (4)

Country Link
US (2) US8144441B2 (enExample)
JP (1) JP5497437B2 (enExample)
TW (1) TWI413228B (enExample)
WO (1) WO2008027802A2 (enExample)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7593204B1 (en) * 2006-06-06 2009-09-22 Rf Micro Devices, Inc. On-chip ESD protection circuit for radio frequency (RF) integrated circuits
US7679870B2 (en) * 2006-10-02 2010-03-16 Win Semiconductors Corp. On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology
JP2008251755A (ja) * 2007-03-30 2008-10-16 Eudyna Devices Inc 半導体装置
JP5532538B2 (ja) * 2008-02-04 2014-06-25 三菱電機株式会社 保護回路
US7881030B1 (en) * 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Enhancement-mode field effect transistor based electrostatic discharge protection circuit
US7881029B1 (en) * 2008-07-07 2011-02-01 Rf Micro Devices, Inc. Depletion-mode field effect transistor based electrostatic discharge protection circuit
US8300378B2 (en) * 2008-09-19 2012-10-30 Advanced Fusion Systems, Llc Method and apparatus for protecting power systems from extraordinary electromagnetic pulses
EP2434627A4 (en) * 2009-05-19 2014-07-02 Mitsubishi Electric Corp GATE DRIVE CIRCUIT
JP5431791B2 (ja) * 2009-05-27 2014-03-05 ルネサスエレクトロニクス株式会社 静電気保護回路
JP2011165749A (ja) * 2010-02-05 2011-08-25 Panasonic Corp 半導体装置
US8785973B2 (en) * 2010-04-19 2014-07-22 National Semiconductor Corporation Ultra high voltage GaN ESD protection device
US8462477B2 (en) * 2010-09-13 2013-06-11 Analog Devices, Inc. Junction field effect transistor for voltage protection
JP5678866B2 (ja) 2011-10-31 2015-03-04 株式会社デンソー 半導体装置およびその製造方法
US8854103B2 (en) * 2012-03-28 2014-10-07 Infineon Technologies Ag Clamping circuit
US9160326B2 (en) 2012-07-10 2015-10-13 The Hong Kong University Of Science And Technology Gate protected semiconductor devices
JP2014026996A (ja) * 2012-07-24 2014-02-06 Toshiba Corp Ｅｓｄ保護回路
US8723227B2 (en) 2012-09-24 2014-05-13 Analog Devices, Inc. Heterojunction compound semiconductor protection clamps and methods of forming the same
US8913359B2 (en) * 2012-12-11 2014-12-16 Globalfoundries Singapore Pte. Ltd. Latch-up free RC-based NMOS ESD power clamp in HV use
US9064704B2 (en) * 2013-02-15 2015-06-23 Win Semiconductors Corp. Integrated circuits with ESD protection devices
KR20140104379A (ko) * 2013-02-20 2014-08-28 페어차일드 세미컨덕터 코포레이션 전기적 과부하/서지/iec를 위한 클램핑 회로 및 장치
US9431390B2 (en) * 2013-05-03 2016-08-30 Microchip Technology Incorporated Compact electrostatic discharge (ESD) protection structure
JP6052068B2 (ja) * 2013-06-07 2016-12-27 株式会社デンソー 半導体装置の保護回路
US9225163B2 (en) * 2013-11-01 2015-12-29 Infineon Technologies Ag Combined ESD active clamp for cascaded voltage pins
US9921596B2 (en) * 2013-12-23 2018-03-20 Marvell Israel (M.I.S.L) Ltd Power supply noise reduction circuit and power supply noise reduction method
US9571093B2 (en) 2014-09-16 2017-02-14 Navitas Semiconductor, Inc. Half bridge driver circuits
US9647476B2 (en) 2014-09-16 2017-05-09 Navitas Semiconductor Inc. Integrated bias supply, reference and bias current circuits for GaN devices
US10290623B2 (en) 2015-04-16 2019-05-14 Gan Systems Inc. Gate input protection for devices and systems comprising high power E-mode GaN transistors
US20160372920A1 (en) * 2015-06-18 2016-12-22 Navitas Semiconductor, Inc. Integrated esd protection circuits in gan
US20170092637A1 (en) * 2015-09-30 2017-03-30 Infineon Technologies Ag Semiconductor ESD Protection Device and Method
US10505032B2 (en) 2015-10-30 2019-12-10 The Hong Kong University Of Science And Technology Semiconductor device with III-nitride channel region and silicon carbide drift region
JP6597357B2 (ja) * 2016-02-09 2019-10-30 三菱電機株式会社 保護ダイオード付き電界効果トランジスタ
US9831867B1 (en) 2016-02-22 2017-11-28 Navitas Semiconductor, Inc. Half bridge driver circuits
CN107123977B (zh) * 2016-02-24 2019-04-19 比亚迪股份有限公司 晶体管的驱动电路
US11373990B2 (en) 2016-02-29 2022-06-28 Semtech Corporation Semiconductor device and method of stacking semiconductor die for system-level ESD protection
US10438940B2 (en) * 2016-12-29 2019-10-08 Nxp Usa, Inc. ESD protection for depletion-mode devices
DE102018124676B4 (de) 2017-10-13 2023-11-02 Taiwan Semiconductor Manufacturing Company, Ltd. Schaltung, System und Verfahren für elektrostatischen Entladungsschutz (ESD-Schutz)
US20190115750A1 (en) * 2017-10-13 2019-04-18 Getac Technology Corporation Electronic device with output energy limiting function
US10879232B2 (en) * 2017-10-13 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Circuit, system and method for electrostatic discharge (ESD) protection
US11081881B2 (en) * 2017-12-20 2021-08-03 Stmicroelectronics International N.V. Full swing positive to negative MOSFET supply clamp for electrostatic discharge (ESD) protection
US10381828B1 (en) * 2018-01-29 2019-08-13 Dialog Semiconductor (Uk) Limited Overvoltage protection of transistor devices
CN108110746A (zh) * 2018-02-09 2018-06-01 苏州容芯微电子有限公司 一种基于增强型phemt的esd保护电路
CN108321781A (zh) * 2018-04-17 2018-07-24 江苏卓胜微电子股份有限公司 一种ESD保护电路及基于GaAs PHEMT工艺的集成模块
TWI680560B (zh) * 2018-05-16 2019-12-21 財團法人工業技術研究院 系統封裝結構及其靜電放電防護結構
US11387230B2 (en) 2018-05-16 2022-07-12 Industrial Technology Research Institute System in package structure for perform electrostatic discharge operation and electrostatic discharge protection structure thereof
CN110571212A (zh) * 2018-06-06 2019-12-13 中芯国际集成电路制造(上海)有限公司 静电保护结构及其形成方法和工作方法、静电保护电路
US10693288B2 (en) * 2018-06-26 2020-06-23 Vishay SIliconix, LLC Protection circuits with negative gate swing capability
US10833063B2 (en) 2018-07-25 2020-11-10 Vishay SIliconix, LLC High electron mobility transistor ESD protection structures
WO2021217400A1 (en) * 2020-04-28 2021-11-04 Innoscience (Zhuhai) Technology Co., Ltd. Electronic device and electrostatic discharge protection circuit
US11715946B2 (en) * 2020-11-30 2023-08-01 Innoscience (suzhou) Semiconductor Co., Ltd. Electronic device and electrostatic discharge protection circuit
CN113809067B (zh) * 2021-11-16 2022-02-18 芯众享(成都)微电子有限公司 一种带有片内栅极回跳保护的常关型hemt器件
US12107416B2 (en) 2021-12-17 2024-10-01 Gan Systems Inc. Integrated bidirectional ESD protection circuit for power semiconductor switching devices
US11695272B1 (en) * 2021-12-30 2023-07-04 Halo Microelectronics International Surge protection apparatus
CN116073768A (zh) * 2023-03-20 2023-05-05 成都明夷电子科技有限公司 射频低噪声放大器芯片的静电保护电路及射频放大电路

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6151877A (ja) * 1984-08-21 1986-03-14 Toshiba Corp 半導体装置
US4707216A (en) * 1986-01-24 1987-11-17 University Of Illinois Semiconductor deposition method and device
EP0348944B1 (en) * 1988-06-28 1997-10-22 Nec Corporation Semiconductor device having compound semiconductor fet of E/D structure with high noise margin
US4930036A (en) * 1989-07-13 1990-05-29 Northern Telecom Limited Electrostatic discharge protection circuit for an integrated circuit
JPH05343374A (ja) * 1992-06-05 1993-12-24 Hitachi Ltd 化合物半導体の加工方法及び加工装置
US5570276A (en) * 1993-11-15 1996-10-29 Optimun Power Conversion, Inc. Switching converter with open-loop input voltage regulation on primary side and closed-loop load regulation on secondary side
JP3495847B2 (ja) * 1995-09-11 2004-02-09 シャープ株式会社 サイリスタを備える半導体集積回路
JP2897736B2 (ja) * 1996-09-30 1999-05-31 日本電気株式会社 化合物半導体電界効果トランジスタ
US6172383B1 (en) * 1997-12-31 2001-01-09 Siliconix Incorporated Power MOSFET having voltage-clamped gate
US6069782A (en) * 1998-08-26 2000-05-30 Integrated Device Technology, Inc. ESD damage protection using a clamp circuit
US6600356B1 (en) * 1999-04-30 2003-07-29 Analog Devices, Inc. ESD protection circuit with controlled breakdown voltage
JP2001358297A (ja) * 2000-06-14 2001-12-26 Nec Corp 静電保護回路
KR20030019432A (ko) * 2000-06-15 2003-03-06 사르노프 코포레이션 멀티-핑거 전류 밸러스팅 ｅｓｄ 보호 회로 및 ｅｓｄ감지 회로용 인터리브 밸러스팅 방법
US6646840B1 (en) * 2000-08-03 2003-11-11 Fairchild Semiconductor Corporation Internally triggered electrostatic device clamp with stand-off voltage
US6507471B2 (en) * 2000-12-07 2003-01-14 Koninklijke Philips Electronics N.V. ESD protection devices
JP3678156B2 (ja) * 2001-03-01 2005-08-03 株式会社デンソー 静電気保護回路
US7589944B2 (en) * 2001-03-16 2009-09-15 Sofics Bvba Electrostatic discharge protection structures for high speed technologies with mixed and ultra-low voltage supplies
JP2003068870A (ja) * 2001-08-29 2003-03-07 Yamaha Corp Ｅｓｄ保護回路
TW502428B (en) * 2001-09-03 2002-09-11 Faraday Tech Corp Electrostatic discharge protection circuit for power source terminal with dual trigger voltages
WO2003063203A2 (en) * 2002-01-18 2003-07-31 The Regents Of The University Of California On-chip esd protection circuit
US20040057172A1 (en) * 2002-09-25 2004-03-25 Maoyou Sun Circuit for protection against electrostatic discharge
US7064942B2 (en) * 2003-05-19 2006-06-20 Silicon Integrated Systems Corp. ESD protection circuit with tunable gate-bias
JP4463635B2 (ja) * 2004-07-20 2010-05-19 株式会社リコー スイッチングレギュレータ、スイッチングレギュレータを使用した電源回路及びスイッチングレギュレータを使用した二次電池の充電回路
JP4843927B2 (ja) * 2004-10-13 2011-12-21 ソニー株式会社 高周波集積回路
US7236053B2 (en) * 2004-12-31 2007-06-26 Cree, Inc. High efficiency switch-mode power amplifier
JP2006303110A (ja) * 2005-04-19 2006-11-02 Nec Electronics Corp 半導体装置
US7679870B2 (en) * 2006-10-02 2010-03-16 Win Semiconductors Corp. On-chip ESD protection circuit using enhancement-mode HEMT/MESFET technology
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US20120049241A1 (en) * 2010-08-27 2012-03-01 National Semiconductor Corporation CDM-resilient high voltage ESD protection cell

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