TWI413228B - 複合半導體元件與電路之靜電放電保護電路 - Google Patents

複合半導體元件與電路之靜電放電保護電路 Download PDF

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Publication number
TWI413228B
TWI413228B TW096132093A TW96132093A TWI413228B TW I413228 B TWI413228 B TW I413228B TW 096132093 A TW096132093 A TW 096132093A TW 96132093 A TW96132093 A TW 96132093A TW I413228 B TWI413228 B TW I413228B
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TW
Taiwan
Prior art keywords
series
coupled
terminal
transistor
circuit
Prior art date
Application number
TW096132093A
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English (en)
Chinese (zh)
Other versions
TW200820415A (en
Inventor
Andrew T Ping
Dominic J Ogbonnah
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Triquint Semiconductor Inc
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Publication of TW200820415A publication Critical patent/TW200820415A/zh
Application granted granted Critical
Publication of TWI413228B publication Critical patent/TWI413228B/zh

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
    • H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
    • H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
    • H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
    • H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
    • H10D89/811—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs using FETs as protective elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Junction Field-Effect Transistors (AREA)
TW096132093A 2006-08-30 2007-08-29 複合半導體元件與電路之靜電放電保護電路 TWI413228B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/512,951 US8144441B2 (en) 2006-08-30 2006-08-30 Electrostatic discharge protection circuit for compound semiconductor devices and circuits

Publications (2)

Publication Number Publication Date
TW200820415A TW200820415A (en) 2008-05-01
TWI413228B true TWI413228B (zh) 2013-10-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096132093A TWI413228B (zh) 2006-08-30 2007-08-29 複合半導體元件與電路之靜電放電保護電路

Country Status (4)

Country Link
US (2) US8144441B2 (enExample)
JP (1) JP5497437B2 (enExample)
TW (1) TWI413228B (enExample)
WO (1) WO2008027802A2 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI680560B (zh) * 2018-05-16 2019-12-21 財團法人工業技術研究院 系統封裝結構及其靜電放電防護結構
US11387230B2 (en) 2018-05-16 2022-07-12 Industrial Technology Research Institute System in package structure for perform electrostatic discharge operation and electrostatic discharge protection structure thereof

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US10505032B2 (en) 2015-10-30 2019-12-10 The Hong Kong University Of Science And Technology Semiconductor device with III-nitride channel region and silicon carbide drift region
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US20190115750A1 (en) * 2017-10-13 2019-04-18 Getac Technology Corporation Electronic device with output energy limiting function
US10879232B2 (en) * 2017-10-13 2020-12-29 Taiwan Semiconductor Manufacturing Company Ltd. Circuit, system and method for electrostatic discharge (ESD) protection
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US10381828B1 (en) * 2018-01-29 2019-08-13 Dialog Semiconductor (Uk) Limited Overvoltage protection of transistor devices
CN108110746A (zh) * 2018-02-09 2018-06-01 苏州容芯微电子有限公司 一种基于增强型phemt的esd保护电路
CN108321781A (zh) * 2018-04-17 2018-07-24 江苏卓胜微电子股份有限公司 一种ESD保护电路及基于GaAs PHEMT工艺的集成模块
CN110571212A (zh) * 2018-06-06 2019-12-13 中芯国际集成电路制造(上海)有限公司 静电保护结构及其形成方法和工作方法、静电保护电路
US10693288B2 (en) * 2018-06-26 2020-06-23 Vishay SIliconix, LLC Protection circuits with negative gate swing capability
US10833063B2 (en) 2018-07-25 2020-11-10 Vishay SIliconix, LLC High electron mobility transistor ESD protection structures
US11699899B2 (en) * 2020-04-28 2023-07-11 Innoscience (Zhuhai) Technology Co., Ltd. Electronic device and electrostatic discharge protection circuit
CN112740498B (zh) * 2020-11-30 2023-03-31 英诺赛科(苏州)半导体有限公司 电子装置和静电放电保护电路
CN113809067B (zh) * 2021-11-16 2022-02-18 芯众享(成都)微电子有限公司 一种带有片内栅极回跳保护的常关型hemt器件
US12107416B2 (en) 2021-12-17 2024-10-01 Gan Systems Inc. Integrated bidirectional ESD protection circuit for power semiconductor switching devices
US11695272B1 (en) * 2021-12-30 2023-07-04 Halo Microelectronics International Surge protection apparatus
CN116073768A (zh) * 2023-03-20 2023-05-05 成都明夷电子科技有限公司 射频低噪声放大器芯片的静电保护电路及射频放大电路

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US11387230B2 (en) 2018-05-16 2022-07-12 Industrial Technology Research Institute System in package structure for perform electrostatic discharge operation and electrostatic discharge protection structure thereof

Also Published As

Publication number Publication date
WO2008027802A3 (en) 2008-05-02
JP5497437B2 (ja) 2014-05-21
WO2008027802A2 (en) 2008-03-06
US8144441B2 (en) 2012-03-27
TW200820415A (en) 2008-05-01
US20120236449A1 (en) 2012-09-20
US8767366B2 (en) 2014-07-01
US20080062595A1 (en) 2008-03-13
JP2010503217A (ja) 2010-01-28

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