CN107123977B - 晶体管的驱动电路 - Google Patents
晶体管的驱动电路 Download PDFInfo
- Publication number
- CN107123977B CN107123977B CN201610100870.5A CN201610100870A CN107123977B CN 107123977 B CN107123977 B CN 107123977B CN 201610100870 A CN201610100870 A CN 201610100870A CN 107123977 B CN107123977 B CN 107123977B
- Authority
- CN
- China
- Prior art keywords
- circuit
- low
- cathode
- power supply
- driving circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000005611 electricity Effects 0.000 claims abstract description 46
- 230000003068 static effect Effects 0.000 claims abstract description 12
- 239000004065 semiconductor Substances 0.000 claims description 18
- 239000003381 stabilizer Substances 0.000 claims description 15
- 230000000694 effects Effects 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 8
- 230000001808 coupling effect Effects 0.000 description 4
- 238000001514 detection method Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 208000033999 Device damage Diseases 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/08104—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
- H03K17/0822—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/162—Modifications for eliminating interference voltages or currents in field-effect transistor switches without feedback from the output circuit to the control circuit
- H03K17/163—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/16—Modifications for eliminating interference voltages or currents
- H03K17/161—Modifications for eliminating interference voltages or currents in field-effect transistor switches
- H03K17/165—Modifications for eliminating interference voltages or currents in field-effect transistor switches by feedback from the output circuit to the control circuit
- H03K17/166—Soft switching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (9)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610100870.5A CN107123977B (zh) | 2016-02-24 | 2016-02-24 | 晶体管的驱动电路 |
EP17755827.7A EP3422546B1 (en) | 2016-02-24 | 2017-02-23 | Transistor driving circuit |
PCT/CN2017/074625 WO2017143998A1 (zh) | 2016-02-24 | 2017-02-23 | 晶体管的驱动电路 |
US16/110,147 US10574224B2 (en) | 2016-02-24 | 2018-08-23 | Drive circuit of transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201610100870.5A CN107123977B (zh) | 2016-02-24 | 2016-02-24 | 晶体管的驱动电路 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107123977A CN107123977A (zh) | 2017-09-01 |
CN107123977B true CN107123977B (zh) | 2019-04-19 |
Family
ID=59685818
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201610100870.5A Active CN107123977B (zh) | 2016-02-24 | 2016-02-24 | 晶体管的驱动电路 |
Country Status (4)
Country | Link |
---|---|
US (1) | US10574224B2 (zh) |
EP (1) | EP3422546B1 (zh) |
CN (1) | CN107123977B (zh) |
WO (1) | WO2017143998A1 (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11689097B2 (en) * | 2021-05-05 | 2023-06-27 | Analog Devices, Inc. | High-voltage to low-voltage interface in power converter circuit |
CN114553212A (zh) * | 2022-02-23 | 2022-05-27 | 中国电子科技集团公司第五十八研究所 | 一种高压电源域地可浮动的低压转高压电平位移电路 |
Family Cites Families (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5477414A (en) * | 1993-05-03 | 1995-12-19 | Xilinx, Inc. | ESD protection circuit |
US5917220A (en) * | 1996-12-31 | 1999-06-29 | Stmicroelectronics, Inc. | Integrated circuit with improved overvoltage protection |
US6002568A (en) * | 1998-06-29 | 1999-12-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD protection scheme for mixed-voltage CMOS integrated circuits |
US6268993B1 (en) | 1999-07-07 | 2001-07-31 | Compaq Computer Corporation | Electrostatic discharge protection clamp for high-voltage power supply or I/O with nominal-voltage reference |
US7023664B2 (en) | 2002-09-12 | 2006-04-04 | Hitachi Global Storage Technologies Netherlands B.V. | Air bearing designs to reduce external van der waals and electrostatic forces |
US7394630B2 (en) | 2002-10-11 | 2008-07-01 | Ming-Dou Ker | Electrostatic discharge protection device for mixed voltage interface |
JP3989358B2 (ja) | 2002-11-13 | 2007-10-10 | 株式会社日立製作所 | 半導体集積回路装置および電子システム |
TWI234266B (en) * | 2004-06-24 | 2005-06-11 | Novatek Microelectronics Corp | Level shifter circuits for ESD protection |
US8144441B2 (en) * | 2006-08-30 | 2012-03-27 | Triquint Semiconductor, Inc. | Electrostatic discharge protection circuit for compound semiconductor devices and circuits |
EP1919082B1 (en) * | 2006-10-30 | 2009-12-02 | Infineon Technologies Austria AG | Circuit arrangement and methods for driving a high-side semiconductor switch |
JP2009117999A (ja) * | 2007-11-02 | 2009-05-28 | Denso Corp | レベルシフト回路 |
TWI390377B (zh) * | 2008-01-28 | 2013-03-21 | Faraday Tech Corp | 準位切換器 |
CN101562334B (zh) | 2008-04-17 | 2012-05-23 | 盛群半导体股份有限公司 | 静电放电防护的电源箝制电路 |
JP5003588B2 (ja) * | 2008-05-15 | 2012-08-15 | 三菱電機株式会社 | 半導体回路 |
KR20110063668A (ko) * | 2008-09-30 | 2011-06-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체장치 |
JP5267402B2 (ja) * | 2009-09-29 | 2013-08-21 | 三菱電機株式会社 | 半導体回路 |
US8339757B2 (en) * | 2010-04-19 | 2012-12-25 | Faraday Technology Corp. | Electrostatic discharge circuit for integrated circuit with multiple power domain |
CN201699675U (zh) * | 2010-07-02 | 2011-01-05 | 日银Imp微电子有限公司 | 一种用于控制桥式驱动电路的栅极驱动电路 |
JP5752659B2 (ja) | 2012-09-20 | 2015-07-22 | 株式会社東芝 | 半導体回路 |
US9153958B2 (en) | 2013-08-15 | 2015-10-06 | Nxp B.V. | Bias-insensitive trigger circuit for bigFET ESD supply protection |
TWI508452B (zh) * | 2013-10-04 | 2015-11-11 | Raydium Semiconductor Corp | 驅動電路之位準偏移器及其運作方法 |
JP6228428B2 (ja) * | 2013-10-30 | 2017-11-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US9960620B2 (en) | 2014-09-16 | 2018-05-01 | Navitas Semiconductor, Inc. | Bootstrap capacitor charging circuit for GaN devices |
US9473116B1 (en) * | 2015-04-15 | 2016-10-18 | Balanstring Technology, Llc | Low-cost, capacitive-coupled level shifter scalable for high-voltage applications |
CN106207953B (zh) * | 2016-07-26 | 2021-10-01 | 中国科学院等离子体物理研究所 | 大功率混合式直流断路器 |
-
2016
- 2016-02-24 CN CN201610100870.5A patent/CN107123977B/zh active Active
-
2017
- 2017-02-23 EP EP17755827.7A patent/EP3422546B1/en active Active
- 2017-02-23 WO PCT/CN2017/074625 patent/WO2017143998A1/zh active Application Filing
-
2018
- 2018-08-23 US US16/110,147 patent/US10574224B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20180367132A1 (en) | 2018-12-20 |
CN107123977A (zh) | 2017-09-01 |
US10574224B2 (en) | 2020-02-25 |
EP3422546A1 (en) | 2019-01-02 |
EP3422546B1 (en) | 2021-09-08 |
EP3422546A4 (en) | 2019-02-20 |
WO2017143998A1 (zh) | 2017-08-31 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20191205 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
TR01 | Transfer of patent right | ||
CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. |
|
CP01 | Change in the name or title of a patent holder | ||
CP03 | Change of name, title or address |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kwai Chung street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
|
CP03 | Change of name, title or address |