JP2010232333A5 - - Google Patents

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Publication number
JP2010232333A5
JP2010232333A5 JP2009077033A JP2009077033A JP2010232333A5 JP 2010232333 A5 JP2010232333 A5 JP 2010232333A5 JP 2009077033 A JP2009077033 A JP 2009077033A JP 2009077033 A JP2009077033 A JP 2009077033A JP 2010232333 A5 JP2010232333 A5 JP 2010232333A5
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JP
Japan
Prior art keywords
electrode
pad
plane
electronic component
semiconductor device
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Application number
JP2009077033A
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English (en)
Japanese (ja)
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JP5106460B2 (ja
JP2010232333A (ja
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Priority to JP2009077033A priority Critical patent/JP5106460B2/ja
Priority claimed from JP2009077033A external-priority patent/JP5106460B2/ja
Priority to US12/730,455 priority patent/US8669653B2/en
Publication of JP2010232333A publication Critical patent/JP2010232333A/ja
Publication of JP2010232333A5 publication Critical patent/JP2010232333A5/ja
Application granted granted Critical
Publication of JP5106460B2 publication Critical patent/JP5106460B2/ja
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Anticipated expiration legal-status Critical

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JP2009077033A 2009-03-26 2009-03-26 半導体装置及びその製造方法、並びに電子装置 Active JP5106460B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009077033A JP5106460B2 (ja) 2009-03-26 2009-03-26 半導体装置及びその製造方法、並びに電子装置
US12/730,455 US8669653B2 (en) 2009-03-26 2010-03-24 Semiconductor device having electronic component in through part, electronic device, and manufacturing method of semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009077033A JP5106460B2 (ja) 2009-03-26 2009-03-26 半導体装置及びその製造方法、並びに電子装置

Publications (3)

Publication Number Publication Date
JP2010232333A JP2010232333A (ja) 2010-10-14
JP2010232333A5 true JP2010232333A5 (cg-RX-API-DMAC7.html) 2012-03-29
JP5106460B2 JP5106460B2 (ja) 2012-12-26

Family

ID=42783089

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009077033A Active JP5106460B2 (ja) 2009-03-26 2009-03-26 半導体装置及びその製造方法、並びに電子装置

Country Status (2)

Country Link
US (1) US8669653B2 (cg-RX-API-DMAC7.html)
JP (1) JP5106460B2 (cg-RX-API-DMAC7.html)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5136632B2 (ja) * 2010-01-08 2013-02-06 大日本印刷株式会社 電子部品
US8604614B2 (en) * 2010-03-26 2013-12-10 Samsung Electronics Co., Ltd. Semiconductor packages having warpage compensation
US8669651B2 (en) * 2010-07-26 2014-03-11 Taiwan Semiconductor Manufacturing Company, Ltd. Package-on-package structures with reduced bump bridging
KR101236798B1 (ko) * 2011-02-16 2013-02-25 앰코 테크놀로지 코리아 주식회사 웨이퍼 레벨 적층형 반도체 패키지 제조 방법
US8963310B2 (en) 2011-08-24 2015-02-24 Tessera, Inc. Low cost hybrid high density package
US10115671B2 (en) * 2012-08-03 2018-10-30 Snaptrack, Inc. Incorporation of passives and fine pitch through via for package on package
KR101515777B1 (ko) * 2013-04-22 2015-05-04 주식회사 네패스 반도체 패키지 제조방법
WO2015026344A1 (en) * 2013-08-21 2015-02-26 Intel Corporation Bumpless die-package interface for bumpless build-up layer (bbul)
US9691726B2 (en) * 2014-07-08 2017-06-27 Taiwan Semiconductor Manufacturing Company, Ltd. Methods for forming fan-out package structure
WO2017037828A1 (ja) 2015-08-31 2017-03-09 オリンパス株式会社 内視鏡、電子ユニットおよび電子ユニットの製造方法
KR102565119B1 (ko) * 2016-08-25 2023-08-08 삼성전기주식회사 전자 소자 내장 기판과 그 제조 방법 및 전자 소자 모듈
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US20200027728A1 (en) * 2018-07-23 2020-01-23 Intel Corporation Substrate package with glass dielectric
US11715699B2 (en) 2020-03-17 2023-08-01 Amkor Technology Singapore Holding Pte. Ltd. Semiconductor devices and methods of manufacturing semiconductor devices
TWI891722B (zh) * 2020-03-17 2025-08-01 新加坡商安靠科技新加坡控股私人有限公司 半導體裝置和製造半導體裝置的方法

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