JP2010219528A - リソグラフィ装置のためのレベルセンサの構成及びデバイス製造方法 - Google Patents
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Abstract
【解決手段】レベルセンサはリソグラフィ装置において基板表面高さを測定する。レベルセンサには、検出用の放射を基板に発する光源と、基板から反射された放射を測定するための検出器ユニットと、が設けられている。光源は、リソグラフィ装置において基板を処理するために使用されるレジストが反応する波長域の検出用放射を発する。
【選択図】図4
Description
放射ビームB(例えばUV放射またはDUV放射)を調整するよう構成されている照明光学系(イルミネータ)ILと、
パターニングデバイス(例えばマスク)MAを支持するよう構成され、いくつかのパラメータに従ってパターニングデバイスを正確に位置決めするよう構成されている第1の位置決め装置PMに接続されている支持構造(例えばマスクテーブル)MTと、
基板(例えばレジストでコーティングされたウエーハ)Wを保持するよう構成され、いくつかのパラメータに従って基板を正確に位置決めするよう構成されている第2の位置決め装置PWに接続されている基板テーブル(例えばウエーハテーブル)WTと、
パターニングデバイスMAにより放射ビームBに付与されたパターンを基板Wの(例えば1つまたは複数のダイからなる)目標部分Cに投影するよう構成されている投影系(例えば屈折投影レンズ系)PSと、を備える。
Claims (18)
- リソグラフィ装置における基板の感光層表面の位置を測定するためのレベルセンサであって、
基板からの反射された放射を動作中に測定するための放射検出器を備え、
前記放射検出器は、基板を処理するために使用される感光層に反応する波長範囲の放射を測定することを特徴とするレベルセンサ。 - 前記波長範囲の放射を基板に向けて発する光源と、
基板を支持し前記表面を位置決めするための基板支持部と、を備え、
前記光源の放射が前記検出器へと基板により鏡面反射されることを特徴とする請求項1に記載のレベルセンサ。 - 前記光源は重水素光源であることを特徴とする請求項2に記載のレベルセンサ。
- 前記波長範囲は400nm未満の放射を含むことを特徴とする請求項1から3のいずれかに記載のレベルセンサ。
- 基板の感光層表面の受光する放射の線量が予め定められた水準を下回ることを特徴とする請求項1から4のいずれかに記載のレベルセンサ。
- 前記予め定められた水準は、1×10−8J/m2であることを特徴とする請求項5に記載のレベルセンサ。
- 前記検出器ユニットは、前記光源の発する放射の波長よりも大きいピッチで刻線が刻まれた刻線格子を備えることを特徴とする請求項1から6のいずれかに記載のレベルセンサ。
- 前記光源と基板との間に配置された投影用の格子をさらに備え、前記刻線格子のピッチと前記投影用の格子のピッチとが等しいことを特徴とする請求項7に記載のレベルセンサ。
- 前記検出器ユニットは、光源波長の関数である分光放射照度プロファイルとは実質的に反比例であり波長の関数である感度プロファイルを有する素子を備えることを特徴とする請求項1から8のいずれかに記載のレベルセンサ。
- 前記光源から基板に投射される光を遮るよう動作するシャッタをさらに備えることを特徴とする請求項2から9のいずれかに記載のレベルセンサ。
- 前記光源を消灯するためのコントローラをさらに備えることを特徴とする請求項2から9のいずれかに記載のレベルセンサ。
- 基板の感光層表面の位置を測定するよう構成されているリソグラフィ装置であって、
前記リソグラフィ装置は、基板により反射された化学線に基づいて高さを測定することを特徴とするリソグラフィ装置。 - 請求項1から11のいずれかに記載のレベルセンサを備えることを特徴とする請求項12に記載のリソグラフィ装置。
- 前記リソグラフィ装置は、基板の目標部分に露光放射のパターン付き放射ビームを投影する投影系をさらに備え、基板の感光層表面の受光する放射の線量が予め定められた水準以下であり、該水準は、前記投影系を出射することが許容されている迷光の大きさに依存することを特徴とする請求項12または13に記載のリソグラフィ装置。
- 露光放射の放射ビームを調整する照明系を備え、該照明系は、前記レベルセンサにより与えられる放射の線量を補正するための露光レベルのオフセットを与えることを特徴とする請求項12から14のいずれかに記載のリソグラフィ装置。
- リソグラフィ装置における基板の感光層表面の位置を測定する方法であって、
基板からの反射された放射を動作中に測定することを含み、
反射された放射は、基板を処理するために使用される感光層に反応する波長範囲にあることを特徴とする方法。 - リソグラフィ装置において基板上の感光層表面の位置を測定する方法であって、該リソグラフィ装置は前記感光層に放射ビームを投影し、前記感光層は前記放射ビームの波長を含む波長範囲の放射に反応する材料を含み、該測定方法は、
前記感光層の材料が反応する前記波長範囲内の波長を有する測定放射ビームを前記感光性表面で反射し、
反射された測定ビームを受光し、
反射された測定ビームに基づいて前記感光性表面の位置を決定することを含むことを特徴とする方法。 - パターニングデバイスから基板にパターンを転写することを含むデバイス製造方法であって、該基板により反射された化学線に基づいて基板の感光層表面の位置を測定することを含む方法。
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KR20180052633A (ko) | 2015-09-15 | 2018-05-18 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
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JP5162006B2 (ja) * | 2011-06-01 | 2013-03-13 | キヤノン株式会社 | 検出装置、露光装置、および、デバイスの製造方法 |
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JP2013055338A (ja) * | 2011-08-31 | 2013-03-21 | Asml Netherlands Bv | リソグラフィ装置用のレベルセンサアレンジメント、リソグラフィ装置及びデバイス製造方法 |
US9279657B2 (en) | 2011-08-31 | 2016-03-08 | Asml Netherlands B.V. | Level sensor arrangement in a lithographic apparatus for measuring multi-layer surfaces |
KR20180052633A (ko) | 2015-09-15 | 2018-05-18 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 기판 처리 방법 및 기억 매체 |
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Also Published As
Publication number | Publication date |
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TWI431439B (zh) | 2014-03-21 |
JP5192505B2 (ja) | 2013-05-08 |
TW201042404A (en) | 2010-12-01 |
US8842293B2 (en) | 2014-09-23 |
KR101198347B1 (ko) | 2012-11-06 |
EP2228685A2 (en) | 2010-09-15 |
US20100233600A1 (en) | 2010-09-16 |
JP5600145B2 (ja) | 2014-10-01 |
CN101840166B (zh) | 2012-07-11 |
KR20100103420A (ko) | 2010-09-27 |
CN101840166A (zh) | 2010-09-22 |
EP2228685B1 (en) | 2018-06-27 |
EP2228685A3 (en) | 2014-07-30 |
SG165245A1 (en) | 2010-10-28 |
JP2012199594A (ja) | 2012-10-18 |
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