JP2010219436A - 多波長半導体レーザおよび光学記録再生装置 - Google Patents

多波長半導体レーザおよび光学記録再生装置 Download PDF

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Publication number
JP2010219436A
JP2010219436A JP2009066842A JP2009066842A JP2010219436A JP 2010219436 A JP2010219436 A JP 2010219436A JP 2009066842 A JP2009066842 A JP 2009066842A JP 2009066842 A JP2009066842 A JP 2009066842A JP 2010219436 A JP2010219436 A JP 2010219436A
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JP
Japan
Prior art keywords
film
dielectric film
semiconductor laser
light emitting
wavelength
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009066842A
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English (en)
Japanese (ja)
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JP2010219436A5 (enExample
Inventor
Yoshihiko Takahashi
義彦 高橋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2009066842A priority Critical patent/JP2010219436A/ja
Priority to US12/656,386 priority patent/US20100238784A1/en
Priority to CN201010134278XA priority patent/CN101841126B/zh
Publication of JP2010219436A publication Critical patent/JP2010219436A/ja
Publication of JP2010219436A5 publication Critical patent/JP2010219436A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G11B7/1275—Two or more lasers having different wavelengths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
    • G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
JP2009066842A 2009-03-18 2009-03-18 多波長半導体レーザおよび光学記録再生装置 Pending JP2010219436A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009066842A JP2010219436A (ja) 2009-03-18 2009-03-18 多波長半導体レーザおよび光学記録再生装置
US12/656,386 US20100238784A1 (en) 2009-03-18 2010-01-28 Multiwavelength semiconductor laser and optical recording/reproducing device
CN201010134278XA CN101841126B (zh) 2009-03-18 2010-03-11 多波长半导体激光器和光学记录/再现装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009066842A JP2010219436A (ja) 2009-03-18 2009-03-18 多波長半導体レーザおよび光学記録再生装置

Publications (2)

Publication Number Publication Date
JP2010219436A true JP2010219436A (ja) 2010-09-30
JP2010219436A5 JP2010219436A5 (enExample) 2012-04-19

Family

ID=42737501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009066842A Pending JP2010219436A (ja) 2009-03-18 2009-03-18 多波長半導体レーザおよび光学記録再生装置

Country Status (3)

Country Link
US (1) US20100238784A1 (enExample)
JP (1) JP2010219436A (enExample)
CN (1) CN101841126B (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102496851A (zh) * 2011-11-24 2012-06-13 上海宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法
CN102738704A (zh) * 2011-03-30 2012-10-17 索尼公司 多波长半导体激光器件
WO2023149081A1 (ja) 2022-02-01 2023-08-10 パナソニックホールディングス株式会社 半導体レーザ素子

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG11201509788QA (en) * 2013-06-06 2015-12-30 Heptagon Micro Optics Pte Ltd Sensor system with active illumination
JP6257361B2 (ja) 2014-02-04 2018-01-10 三菱電機株式会社 半導体レーザアレイ
WO2021187081A1 (ja) * 2020-03-17 2021-09-23 パナソニック株式会社 半導体レーザ素子

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186656A (ja) * 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ素子用反射膜及びその製造方法
JP2001077456A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体レーザおよび光学部品用コート膜
JP2001077457A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体レーザおよびその製造方法
JP2001119096A (ja) * 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子
JPH1084161A (ja) * 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2005175111A (ja) * 2003-12-10 2005-06-30 Hitachi Ltd 半導体レーザ及びその製造方法
KR100550924B1 (ko) * 2004-09-14 2006-02-13 삼성전기주식회사 다파장 레이저 다이오드
JP2006351967A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4789558B2 (ja) * 2005-09-22 2011-10-12 パナソニック株式会社 多波長半導体レーザ装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186656A (ja) * 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ素子用反射膜及びその製造方法
JP2001077456A (ja) * 1999-09-07 2001-03-23 Sony Corp 半導体レーザおよび光学部品用コート膜
JP2001077457A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体レーザおよびその製造方法
JP2001119096A (ja) * 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102738704A (zh) * 2011-03-30 2012-10-17 索尼公司 多波长半导体激光器件
JP2012216742A (ja) * 2011-03-30 2012-11-08 Sony Corp 多波長半導体レーザ素子
CN102496851A (zh) * 2011-11-24 2012-06-13 上海宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法
CN102496851B (zh) * 2011-11-24 2015-11-25 上海华虹宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法
WO2023149081A1 (ja) 2022-02-01 2023-08-10 パナソニックホールディングス株式会社 半導体レーザ素子

Also Published As

Publication number Publication date
CN101841126A (zh) 2010-09-22
CN101841126B (zh) 2012-04-25
US20100238784A1 (en) 2010-09-23

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