CN101841126B - 多波长半导体激光器和光学记录/再现装置 - Google Patents

多波长半导体激光器和光学记录/再现装置 Download PDF

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Publication number
CN101841126B
CN101841126B CN201010134278XA CN201010134278A CN101841126B CN 101841126 B CN101841126 B CN 101841126B CN 201010134278X A CN201010134278X A CN 201010134278XA CN 201010134278 A CN201010134278 A CN 201010134278A CN 101841126 B CN101841126 B CN 101841126B
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CN
China
Prior art keywords
wavelength
semiconductor laser
dielectric film
light emitting
refractive index
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Expired - Fee Related
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CN201010134278XA
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English (en)
Chinese (zh)
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CN101841126A (zh
Inventor
高桥义彦
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Sony Corp
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Sony Corp
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Publication date
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Publication of CN101841126A publication Critical patent/CN101841126A/zh
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
    • G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
    • G11B7/127—Lasers; Multiple laser arrays
    • G11B7/1275—Two or more lasers having different wavelengths
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
    • G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0287—Facet reflectivity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
CN201010134278XA 2009-03-18 2010-03-11 多波长半导体激光器和光学记录/再现装置 Expired - Fee Related CN101841126B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009066842A JP2010219436A (ja) 2009-03-18 2009-03-18 多波長半導体レーザおよび光学記録再生装置
JP066842/09 2009-03-18

Publications (2)

Publication Number Publication Date
CN101841126A CN101841126A (zh) 2010-09-22
CN101841126B true CN101841126B (zh) 2012-04-25

Family

ID=42737501

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201010134278XA Expired - Fee Related CN101841126B (zh) 2009-03-18 2010-03-11 多波长半导体激光器和光学记录/再现装置

Country Status (3)

Country Link
US (1) US20100238784A1 (enExample)
JP (1) JP2010219436A (enExample)
CN (1) CN101841126B (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5787069B2 (ja) * 2011-03-30 2015-09-30 ソニー株式会社 多波長半導体レーザ素子
CN102496851B (zh) * 2011-11-24 2015-11-25 上海华虹宏力半导体制造有限公司 激光器及其形成方法、谐振腔及其形成方法
SG11201509788QA (en) * 2013-06-06 2015-12-30 Heptagon Micro Optics Pte Ltd Sensor system with active illumination
JP6257361B2 (ja) 2014-02-04 2018-01-10 三菱電機株式会社 半導体レーザアレイ
WO2021187081A1 (ja) * 2020-03-17 2021-09-23 パナソニック株式会社 半導体レーザ素子
WO2023149081A1 (ja) 2022-02-01 2023-08-10 パナソニックホールディングス株式会社 半導体レーザ素子

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61207091A (ja) * 1985-03-11 1986-09-13 Sharp Corp 半導体レ−ザ素子
JPH1084161A (ja) * 1996-09-06 1998-03-31 Sumitomo Electric Ind Ltd 半導体レーザ及びその製造方法
JPH11186656A (ja) * 1997-12-22 1999-07-09 Victor Co Of Japan Ltd 半導体レーザ素子用反射膜及びその製造方法
JP4613374B2 (ja) * 1999-09-07 2011-01-19 ソニー株式会社 半導体レーザ
JP2001077457A (ja) * 1999-09-08 2001-03-23 Sony Corp 半導体レーザおよびその製造方法
JP2001119096A (ja) * 1999-10-18 2001-04-27 Fuji Photo Film Co Ltd 半導体レーザー装置
JP2001257413A (ja) * 2000-03-14 2001-09-21 Toshiba Electronic Engineering Corp 半導体レーザ装置及びその製造方法
JP4097552B2 (ja) * 2003-03-27 2008-06-11 三菱電機株式会社 半導体レーザ装置
JP2004327678A (ja) * 2003-04-24 2004-11-18 Sony Corp 多波長半導体レーザ及びその製造方法
JP2005175111A (ja) * 2003-12-10 2005-06-30 Hitachi Ltd 半導体レーザ及びその製造方法
KR100550924B1 (ko) * 2004-09-14 2006-02-13 삼성전기주식회사 다파장 레이저 다이오드
JP2006351967A (ja) * 2005-06-17 2006-12-28 Sony Corp 多波長半導体レーザ素子
JP4789558B2 (ja) * 2005-09-22 2011-10-12 パナソニック株式会社 多波長半導体レーザ装置

Also Published As

Publication number Publication date
JP2010219436A (ja) 2010-09-30
CN101841126A (zh) 2010-09-22
US20100238784A1 (en) 2010-09-23

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Granted publication date: 20120425

Termination date: 20140311