JP2010163690A5 - - Google Patents
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- Publication number
- JP2010163690A5 JP2010163690A5 JP2010045946A JP2010045946A JP2010163690A5 JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5 JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5
- Authority
- JP
- Japan
- Prior art keywords
- main body
- chamber
- plasma
- separation
- substrate stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000926 separation method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010045946A JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008197582 | 2008-07-31 | ||
| JP2008197582 | 2008-07-31 | ||
| JP2010045946A JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504100A Division JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010163690A JP2010163690A (ja) | 2010-07-29 |
| JP2010163690A5 true JP2010163690A5 (enExample) | 2011-05-26 |
| JP5189609B2 JP5189609B2 (ja) | 2013-04-24 |
Family
ID=41610190
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504100A Active JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
| JP2010045946A Active JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504100A Active JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8303785B2 (enExample) |
| JP (2) | JP4580040B2 (enExample) |
| KR (1) | KR101216790B1 (enExample) |
| CN (1) | CN102105618B (enExample) |
| WO (1) | WO2010013476A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| JP5458177B2 (ja) | 2010-12-28 | 2014-04-02 | キヤノンアネルバ株式会社 | 半導体装置の製造方法および装置 |
| US9087679B2 (en) * | 2011-02-09 | 2015-07-21 | Applied Materials, Inc. | Uniformity tuning capable ESC grounding kit for RF PVD chamber |
| JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
| TWI646869B (zh) * | 2011-10-05 | 2019-01-01 | 美商應用材料股份有限公司 | 對稱電漿處理腔室 |
| US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| JP6377060B2 (ja) | 2012-08-28 | 2018-08-22 | アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． | 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル |
| DE102013005868A1 (de) * | 2013-04-05 | 2014-10-09 | Leybold Optics Gmbh | Vorrichtung zur Vakuumbehandlung von Substraten |
| SG11201700850QA (en) | 2014-08-08 | 2017-03-30 | Canon Anelva Corp | Sputtering apparatus and processing apparatus |
| CN108291293A (zh) * | 2015-12-09 | 2018-07-17 | 应用材料公司 | 被配置为用于在基板上进行溅射沉积的系统、用于溅射沉积腔室的屏蔽装置及用于在溅射沉积腔室中提供电屏蔽的方法 |
| CN109473331B (zh) * | 2017-09-08 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 腔室屏蔽装置和半导体处理腔 |
| CN111788654B (zh) | 2017-11-17 | 2023-04-14 | 先进工程解决方案全球控股私人有限公司 | 等离子体处理系统中的调制电源的改进应用 |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| PL3711081T3 (pl) | 2017-11-17 | 2024-08-19 | Aes Global Holdings, Pte. Ltd. | Przestrzenne i czasowe sterowanie napięciem polaryzacji jonów do przetwarzania plazmowego |
| EP4231328A1 (en) | 2017-11-17 | 2023-08-23 | AES Global Holdings, Pte. Ltd. | Synchronized pulsing of plasma processing source and substrate bias |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| KR102717559B1 (ko) * | 2018-01-29 | 2024-10-14 | 어플라이드 머티어리얼스, 인코포레이티드 | Pvd 프로세스들에서의 입자 감소를 위한 프로세스 키트 기하형상 |
| KR102071807B1 (ko) * | 2018-10-31 | 2020-01-30 | 동국대학교 경주캠퍼스 산학협력단 | 듀오플라즈마트론의 교체형 중간전극판 |
| WO2020137489A1 (ja) * | 2018-12-27 | 2020-07-02 | 株式会社アルバック | 防着部材及び真空処理装置 |
| WO2021011450A1 (en) | 2019-07-12 | 2021-01-21 | Advanced Energy Industries, Inc. | Bias supply with a single controlled switch |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US20210391146A1 (en) * | 2020-06-11 | 2021-12-16 | Applied Materials, Inc. | Rf frequency control and ground path return in semiconductor process chambers |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| JP7776233B2 (ja) * | 2022-06-16 | 2025-11-26 | 東京エレクトロン株式会社 | 成膜装置 |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3086095B2 (ja) * | 1992-12-22 | 2000-09-11 | キヤノン株式会社 | スパッタリング装置 |
| JP3563095B2 (ja) * | 1993-10-28 | 2004-09-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2954028B2 (ja) * | 1996-08-16 | 1999-09-27 | 山形日本電気株式会社 | スパッタリング装置 |
| JP4108354B2 (ja) * | 2001-03-30 | 2008-06-25 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| JP4406188B2 (ja) * | 2002-06-12 | 2010-01-27 | キヤノンアネルバ株式会社 | 成膜装置 |
| JP4451684B2 (ja) * | 2004-03-17 | 2010-04-14 | キヤノンアネルバ株式会社 | 真空処理装置 |
| CN1315150C (zh) * | 2004-11-12 | 2007-05-09 | 哈尔滨工业大学 | 等离子体脉冲注入的装置 |
| US7944677B2 (en) * | 2007-09-11 | 2011-05-17 | Canon Anelva Corporation | Electrostatic chuck |
| WO2009078094A1 (ja) * | 2007-12-18 | 2009-06-25 | Canon Anelva Corporation | プラズマ処理装置 |
| JP5324251B2 (ja) * | 2008-05-16 | 2013-10-23 | キヤノンアネルバ株式会社 | 基板保持装置 |
-
2009
- 2009-07-30 CN CN2009801292803A patent/CN102105618B/zh active Active
- 2009-07-30 JP JP2010504100A patent/JP4580040B2/ja active Active
- 2009-07-30 WO PCT/JP2009/003612 patent/WO2010013476A1/ja not_active Ceased
- 2009-07-30 KR KR1020107014755A patent/KR101216790B1/ko active Active
-
2010
- 2010-03-02 JP JP2010045946A patent/JP5189609B2/ja active Active
- 2010-12-28 US US12/979,968 patent/US8303785B2/en active Active
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