JP2010163690A5 - - Google Patents

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Publication number
JP2010163690A5
JP2010163690A5 JP2010045946A JP2010045946A JP2010163690A5 JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5 JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5
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JP
Japan
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main body
chamber
plasma
separation
substrate stage
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JP2010045946A
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English (en)
Japanese (ja)
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JP2010163690A (ja
JP5189609B2 (ja
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Publication of JP2010163690A5 publication Critical patent/JP2010163690A5/ja
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JP2010045946A 2008-07-31 2010-03-02 プラズマ処理装置 Active JP5189609B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010045946A JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197582 2008-07-31
JP2008197582 2008-07-31
JP2010045946A JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Related Parent Applications (1)

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JP2010504100A Division JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2010163690A JP2010163690A (ja) 2010-07-29
JP2010163690A5 true JP2010163690A5 (enExample) 2011-05-26
JP5189609B2 JP5189609B2 (ja) 2013-04-24

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Family Applications (2)

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JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法
JP2010045946A Active JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Country Status (5)

Country Link
US (1) US8303785B2 (enExample)
JP (2) JP4580040B2 (enExample)
KR (1) KR101216790B1 (enExample)
CN (1) CN102105618B (enExample)
WO (1) WO2010013476A1 (enExample)

Families Citing this family (36)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US10707055B2 (en) 2017-11-17 2020-07-07 Advanced Energy Industries, Inc. Spatial and temporal control of ion bias voltage for plasma processing
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
JP5458177B2 (ja) 2010-12-28 2014-04-02 キヤノンアネルバ株式会社 半導体装置の製造方法および装置
KR101904516B1 (ko) * 2011-02-09 2018-10-04 어플라이드 머티어리얼스, 인코포레이티드 Rf pvd 챔버를 위한 균일성 튜닝 가능한 정전척 접지 키트
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
TW201325326A (zh) * 2011-10-05 2013-06-16 應用材料股份有限公司 電漿處理設備及其基板支撐組件
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
KR102025540B1 (ko) 2012-08-28 2019-09-26 에이이에스 글로벌 홀딩스 피티이 리미티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어; 고속 이온 에너지 스위칭; 이온 에너지 제어와 펄스동작 바이어스 서플라이; 및 가상 전면 패널
DE102013005868A1 (de) * 2013-04-05 2014-10-09 Leybold Optics Gmbh Vorrichtung zur Vakuumbehandlung von Substraten
SG11201700850QA (en) 2014-08-08 2017-03-30 Canon Anelva Corp Sputtering apparatus and processing apparatus
US20180358212A1 (en) * 2015-12-09 2018-12-13 Applied Materials, Inc. System configured for sputter deposition on a substrate, shielding device for a sputter deposition chamber, and method for providing an electrical shielding in a sputter deposition chamber
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
CN111868873B (zh) 2017-11-17 2023-06-16 先进工程解决方案全球控股私人有限公司 等离子体处理源和衬底偏置的同步的脉冲化
JP2021503702A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス, プライベート リミテッド プラズマ処理システムにおける変調供給源の改良された印加
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
KR102071807B1 (ko) * 2018-10-31 2020-01-30 동국대학교 경주캠퍼스 산학협력단 듀오플라즈마트론의 교체형 중간전극판
WO2020137489A1 (ja) * 2018-12-27 2020-07-02 株式会社アルバック 防着部材及び真空処理装置
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply
US12567572B2 (en) 2023-07-11 2026-03-03 Advanced Energy Industries, Inc. Plasma behaviors predicted by current measurements during asymmetric bias waveform application

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3086095B2 (ja) * 1992-12-22 2000-09-11 キヤノン株式会社 スパッタリング装置
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2954028B2 (ja) 1996-08-16 1999-09-27 山形日本電気株式会社 スパッタリング装置
JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
JP4406188B2 (ja) * 2002-06-12 2010-01-27 キヤノンアネルバ株式会社 成膜装置
JP4451684B2 (ja) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
CN1315150C (zh) * 2004-11-12 2007-05-09 哈尔滨工业大学 等离子体脉冲注入的装置
JP4418032B2 (ja) 2007-09-11 2010-02-17 キヤノンアネルバ株式会社 静電チャック
JP5037630B2 (ja) 2007-12-18 2012-10-03 キヤノンアネルバ株式会社 プラズマ処理装置
JP5324251B2 (ja) 2008-05-16 2013-10-23 キヤノンアネルバ株式会社 基板保持装置

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