JP2010163690A5 - - Google Patents
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- Publication number
- JP2010163690A5 JP2010163690A5 JP2010045946A JP2010045946A JP2010163690A5 JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5 JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5
- Authority
- JP
- Japan
- Prior art keywords
- main body
- chamber
- plasma
- separation
- substrate stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000926 separation method Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 10
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010045946A JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008197582 | 2008-07-31 | ||
| JP2008197582 | 2008-07-31 | ||
| JP2010045946A JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504100A Division JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010163690A JP2010163690A (ja) | 2010-07-29 |
| JP2010163690A5 true JP2010163690A5 (enExample) | 2011-05-26 |
| JP5189609B2 JP5189609B2 (ja) | 2013-04-24 |
Family
ID=41610190
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504100A Active JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
| JP2010045946A Active JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010504100A Active JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US8303785B2 (enExample) |
| JP (2) | JP4580040B2 (enExample) |
| KR (1) | KR101216790B1 (enExample) |
| CN (1) | CN102105618B (enExample) |
| WO (1) | WO2010013476A1 (enExample) |
Families Citing this family (35)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
| US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
| US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
| US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
| US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
| US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
| KR101409433B1 (ko) | 2010-12-28 | 2014-06-24 | 캐논 아네르바 가부시키가이샤 | 반도체 디바이스 제조방법 및 장치 |
| WO2012109104A2 (en) * | 2011-02-09 | 2012-08-16 | Applied Materials, Inc. | Uniformity tuning capable esc grounding kit for rf pvd chamber |
| JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
| TWI719473B (zh) * | 2011-10-05 | 2021-02-21 | 美商應用材料股份有限公司 | 對稱電漿處理腔室 |
| US9105447B2 (en) | 2012-08-28 | 2015-08-11 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
| US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
| US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
| DE102013005868A1 (de) * | 2013-04-05 | 2014-10-09 | Leybold Optics Gmbh | Vorrichtung zur Vakuumbehandlung von Substraten |
| WO2016021496A1 (ja) | 2014-08-08 | 2016-02-11 | キヤノンアネルバ株式会社 | スパッタ装置および処理装置 |
| WO2017098292A1 (en) * | 2015-12-09 | 2017-06-15 | Applied Materials, Inc. | System configured for sputter deposition on a substrate, shielding device for a sputter deposition chamber, and method for providing an electrical shielding in a sputter deposition chamber |
| CN109473331B (zh) * | 2017-09-08 | 2022-11-25 | 北京北方华创微电子装备有限公司 | 腔室屏蔽装置和半导体处理腔 |
| KR102768697B1 (ko) | 2017-11-17 | 2025-02-14 | 에이이에스 글로벌 홀딩스 피티이 리미티드 | 플라즈마 프로세싱을 위한 이온 바이어스 전압의 공간 및 시간 제어 |
| TWI804836B (zh) | 2017-11-17 | 2023-06-11 | 新加坡商Aes 全球公司 | 用於電漿處理之方法和系統以及相關的非暫時性電腦可讀取媒體 |
| US12230476B2 (en) | 2017-11-17 | 2025-02-18 | Advanced Energy Industries, Inc. | Integrated control of a plasma processing system |
| US11437221B2 (en) | 2017-11-17 | 2022-09-06 | Advanced Energy Industries, Inc. | Spatial monitoring and control of plasma processing environments |
| WO2019099937A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Improved application of modulating supplies in a plasma processing system |
| US12505986B2 (en) | 2017-11-17 | 2025-12-23 | Advanced Energy Industries, Inc. | Synchronization of plasma processing components |
| CN111602235B (zh) * | 2018-01-29 | 2025-03-14 | 应用材料公司 | 用于在pvd处理中减少颗粒的处理配件几何形状 |
| KR102071807B1 (ko) * | 2018-10-31 | 2020-01-30 | 동국대학교 경주캠퍼스 산학협력단 | 듀오플라즈마트론의 교체형 중간전극판 |
| KR102458281B1 (ko) * | 2018-12-27 | 2022-10-24 | 가부시키가이샤 아루박 | 방착부재 및 진공처리장치 |
| CN114222958B (zh) | 2019-07-12 | 2024-03-19 | 先进工程解决方案全球控股私人有限公司 | 具有单个受控开关的偏置电源 |
| US12125674B2 (en) | 2020-05-11 | 2024-10-22 | Advanced Energy Industries, Inc. | Surface charge and power feedback and control using a switch mode bias system |
| US20210391146A1 (en) * | 2020-06-11 | 2021-12-16 | Applied Materials, Inc. | Rf frequency control and ground path return in semiconductor process chambers |
| US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
| US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
| US11942309B2 (en) | 2022-01-26 | 2024-03-26 | Advanced Energy Industries, Inc. | Bias supply with resonant switching |
| JP7776233B2 (ja) * | 2022-06-16 | 2025-11-26 | 東京エレクトロン株式会社 | 成膜装置 |
| US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3086095B2 (ja) * | 1992-12-22 | 2000-09-11 | キヤノン株式会社 | スパッタリング装置 |
| JP3563095B2 (ja) * | 1993-10-28 | 2004-09-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
| JP2954028B2 (ja) * | 1996-08-16 | 1999-09-27 | 山形日本電気株式会社 | スパッタリング装置 |
| JP4108354B2 (ja) * | 2001-03-30 | 2008-06-25 | キヤノンアネルバ株式会社 | スパッタリング装置 |
| JP4406188B2 (ja) * | 2002-06-12 | 2010-01-27 | キヤノンアネルバ株式会社 | 成膜装置 |
| JP4451684B2 (ja) * | 2004-03-17 | 2010-04-14 | キヤノンアネルバ株式会社 | 真空処理装置 |
| CN1315150C (zh) * | 2004-11-12 | 2007-05-09 | 哈尔滨工业大学 | 等离子体脉冲注入的装置 |
| CN101802998B (zh) | 2007-09-11 | 2014-07-30 | 佳能安内华股份有限公司 | 静电夹具 |
| WO2009078094A1 (ja) | 2007-12-18 | 2009-06-25 | Canon Anelva Corporation | プラズマ処理装置 |
| JP5324251B2 (ja) | 2008-05-16 | 2013-10-23 | キヤノンアネルバ株式会社 | 基板保持装置 |
-
2009
- 2009-07-30 CN CN2009801292803A patent/CN102105618B/zh active Active
- 2009-07-30 WO PCT/JP2009/003612 patent/WO2010013476A1/ja not_active Ceased
- 2009-07-30 KR KR1020107014755A patent/KR101216790B1/ko active Active
- 2009-07-30 JP JP2010504100A patent/JP4580040B2/ja active Active
-
2010
- 2010-03-02 JP JP2010045946A patent/JP5189609B2/ja active Active
- 2010-12-28 US US12/979,968 patent/US8303785B2/en active Active
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