JP2010163690A5 - - Google Patents

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Publication number
JP2010163690A5
JP2010163690A5 JP2010045946A JP2010045946A JP2010163690A5 JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5 JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010163690 A5 JP2010163690 A5 JP 2010163690A5
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JP
Japan
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main body
chamber
plasma
separation
substrate stage
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JP2010045946A
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English (en)
Japanese (ja)
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JP2010163690A (ja
JP5189609B2 (ja
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Publication of JP2010163690A5 publication Critical patent/JP2010163690A5/ja
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JP2010045946A 2008-07-31 2010-03-02 プラズマ処理装置 Active JP5189609B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2010045946A JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197582 2008-07-31
JP2008197582 2008-07-31
JP2010045946A JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2010504100A Division JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Publications (3)

Publication Number Publication Date
JP2010163690A JP2010163690A (ja) 2010-07-29
JP2010163690A5 true JP2010163690A5 (enExample) 2011-05-26
JP5189609B2 JP5189609B2 (ja) 2013-04-24

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ID=41610190

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法
JP2010045946A Active JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Country Status (5)

Country Link
US (1) US8303785B2 (enExample)
JP (2) JP4580040B2 (enExample)
KR (1) KR101216790B1 (enExample)
CN (1) CN102105618B (enExample)
WO (1) WO2010013476A1 (enExample)

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US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
DE112011104624B4 (de) 2010-12-28 2019-01-24 Canon Anelva Corporation Verfahren zum Herstellen einer Halbleitervorrichtung
CN103348446B (zh) * 2011-02-09 2016-08-24 应用材料公司 用于rf pvd腔室且能均匀调整的esc接地套件
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
TWI594667B (zh) * 2011-10-05 2017-08-01 應用材料股份有限公司 對稱電漿處理腔室
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
KR101909571B1 (ko) 2012-08-28 2018-10-19 어드밴스드 에너지 인더스트리즈 인코포레이티드 넓은 다이내믹 레인지 이온 에너지 바이어스 제어； 고속 이온 에너지 스위칭； 이온 에너지 제어와 펄스동작 바이어스 서플라이； 및 가상 전면 패널
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
DE102013005868A1 (de) * 2013-04-05 2014-10-09 Leybold Optics Gmbh Vorrichtung zur Vakuumbehandlung von Substraten
KR101939505B1 (ko) * 2014-08-08 2019-01-16 캐논 아네르바 가부시키가이샤 스퍼터 장치 및 처리 장치
KR20180086217A (ko) * 2015-12-09 2018-07-30 어플라이드 머티어리얼스, 인코포레이티드 기판 상의 스퍼터 증착을 위해 구성된 시스템, 스퍼터 증착 챔버를 위한 차폐 디바이스, 및 스퍼터 증착 챔버에서 전기적 차폐를 제공하기 위한 방법
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
CN111788655B (zh) 2017-11-17 2024-04-05 先进工程解决方案全球控股私人有限公司 对等离子体处理的离子偏置电压的空间和时间控制
JP2021503702A (ja) 2017-11-17 2021-02-12 エーイーエス グローバル ホールディングス， プライベート リミテッド プラズマ処理システムにおける変調供給源の改良された印加
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
TWI726258B (zh) 2017-11-17 2021-05-01 新加坡商Ａｅｓ全球公司 用於電漿處理之方法和系統以及相關的非暫時性電腦可讀取媒體
US12505986B2 (en) 2017-11-17 2025-12-23 Advanced Energy Industries, Inc. Synchronization of plasma processing components
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
CN111602235B (zh) * 2018-01-29 2025-03-14 应用材料公司 用于在pvd处理中减少颗粒的处理配件几何形状
KR102071807B1 (ko) * 2018-10-31 2020-01-30 동국대학교 경주캠퍼스 산학협력단 듀오플라즈마트론의 교체형 중간전극판
KR102458281B1 (ko) * 2018-12-27 2022-10-24 가부시키가이샤 아루박 방착부재 및 진공처리장치
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
US11978613B2 (en) 2022-09-01 2024-05-07 Advanced Energy Industries, Inc. Transition control in a bias supply

Family Cites Families (10)

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JP3086095B2 (ja) * 1992-12-22 2000-09-11 キヤノン株式会社 スパッタリング装置
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
JP2954028B2 (ja) 1996-08-16 1999-09-27 山形日本電気株式会社 スパッタリング装置
JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
JP4406188B2 (ja) * 2002-06-12 2010-01-27 キヤノンアネルバ株式会社 成膜装置
JP4451684B2 (ja) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
CN1315150C (zh) * 2004-11-12 2007-05-09 哈尔滨工业大学 等离子体脉冲注入的装置
US7944677B2 (en) * 2007-09-11 2011-05-17 Canon Anelva Corporation Electrostatic chuck
WO2009078094A1 (ja) * 2007-12-18 2009-06-25 Canon Anelva Corporation プラズマ処理装置
JP5324251B2 (ja) * 2008-05-16 2013-10-23 キヤノンアネルバ株式会社 基板保持装置

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