JP5189609B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
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- JP5189609B2 JP5189609B2 JP2010045946A JP2010045946A JP5189609B2 JP 5189609 B2 JP5189609 B2 JP 5189609B2 JP 2010045946 A JP2010045946 A JP 2010045946A JP 2010045946 A JP2010045946 A JP 2010045946A JP 5189609 B2 JP5189609 B2 JP 5189609B2
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- 239000000758 substrate Substances 0.000 claims description 43
- 238000000926 separation method Methods 0.000 claims description 14
- 238000000151 deposition Methods 0.000 description 37
- 230000008021 deposition Effects 0.000 description 37
- 239000010408 film Substances 0.000 description 14
- 238000004544 sputter deposition Methods 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000002245 particle Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 230000003028 elevating effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000007599 discharging Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04D—NON-POSITIVE-DISPLACEMENT PUMPS
- F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
- F04D17/08—Centrifugal pumps
- F04D17/16—Centrifugal pumps for displacing without appreciable compression
- F04D17/168—Pumps specially adapted to produce a vacuum
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
- F16B35/00—Screw-bolts; Stay-bolts; Screw-threaded studs; Screws; Set screws
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3441—Dark space shields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Description
チャンバと、
前記チャンバ内で基板を保持するための基板ステージと、
チャンバ内部にプラズマを生成するための電極と、
本体部と前記本体部から分割形成された分離部とを備え、前記電極と前記基板ステージとの間のプラズマ空間を取り囲むように形成されたシールド部材と、
前記基板ステージおよび前記分離部を昇降させるための駆動手段と、を備え、
前記本体部及び前記分離部は、内側部及び前記内側部よりもプラズマ空間の外側に位置する外側部を夫々有し、
前記本体部及び前記分離部の外側部は、導電性部材であって、互いの接触を介して前記チャンバと基板ステージとを連結可能に形成され、
前記本体部及び分離部の内側部は、互いに非接触に形成されており、
前記プラズマを生成するためのプラズマ空間を開放する開放位置と、前記本体部及び分離部の外側部が互いに接触する接触位置との間で、前記駆動手段は前記分離部を昇降移動させることを特徴とする。
本発明の実施形態にかかるプラズマ処理装置は、例えば、大型フラットパネルディスプレイ(液晶ディスプレイ)や薄膜太陽電池パネル、マイクロインダクタ、磁気記録ヘッドなどの電子デバイス、あるいは、MRAM(Magnetoresistive Random Access Memory)のような磁性薄膜を使用したメモリデバイスなどを製造するための成膜工程に適用可能である。
Claims (1)
- チャンバと、
前記チャンバ内で基板を保持するための基板ステージと、
チャンバ内部にプラズマを生成するための電極と、
本体部と前記本体部から分割形成された分離部とを備え、前記電極と前記基板ステージとの間のプラズマ空間を取り囲むように形成されたシールド部材と、
前記基板ステージおよび前記分離部を昇降させるための駆動手段と、を備え、
前記本体部及び前記分離部は、内側部及び前記内側部よりもプラズマ空間の外側に位置する外側部を夫々有し、
前記本体部及び前記分離部の外側部は、導電性部材であって、互いの接触を介して前記チャンバと基板ステージとを連結可能に形成され、
前記本体部及び分離部の内側部は、互いに非接触に形成されており、
前記プラズマを生成するためのプラズマ空間を開放する開放位置と、前記本体部及び分離部の外側部が互いに接触する接触位置との間で、前記駆動手段は前記分離部を昇降移動させることを特徴とするプラズマ処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010045946A JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008197582 | 2008-07-31 | ||
JP2008197582 | 2008-07-31 | ||
JP2010045946A JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504100A Division JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2010163690A JP2010163690A (ja) | 2010-07-29 |
JP2010163690A5 JP2010163690A5 (ja) | 2011-05-26 |
JP5189609B2 true JP5189609B2 (ja) | 2013-04-24 |
Family
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Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504100A Active JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
JP2010045946A Active JP5189609B2 (ja) | 2008-07-31 | 2010-03-02 | プラズマ処理装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010504100A Active JP4580040B2 (ja) | 2008-07-31 | 2009-07-30 | プラズマ処理装置および電子デバイスの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8303785B2 (ja) |
JP (2) | JP4580040B2 (ja) |
KR (1) | KR101216790B1 (ja) |
CN (1) | CN102105618B (ja) |
WO (1) | WO2010013476A1 (ja) |
Families Citing this family (30)
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US9287086B2 (en) | 2010-04-26 | 2016-03-15 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution |
US9287092B2 (en) | 2009-05-01 | 2016-03-15 | Advanced Energy Industries, Inc. | Method and apparatus for controlling ion energy distribution |
US9767988B2 (en) | 2010-08-29 | 2017-09-19 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
US9435029B2 (en) * | 2010-08-29 | 2016-09-06 | Advanced Energy Industries, Inc. | Wafer chucking system for advanced plasma ion energy processing systems |
US11615941B2 (en) | 2009-05-01 | 2023-03-28 | Advanced Energy Industries, Inc. | System, method, and apparatus for controlling ion energy distribution in plasma processing systems |
US9309594B2 (en) | 2010-04-26 | 2016-04-12 | Advanced Energy Industries, Inc. | System, method and apparatus for controlling ion energy distribution of a projected plasma |
US9362089B2 (en) | 2010-08-29 | 2016-06-07 | Advanced Energy Industries, Inc. | Method of controlling the switched mode ion energy distribution system |
JP5458177B2 (ja) | 2010-12-28 | 2014-04-02 | キヤノンアネルバ株式会社 | 半導体装置の製造方法および装置 |
US9087679B2 (en) * | 2011-02-09 | 2015-07-21 | Applied Materials, Inc. | Uniformity tuning capable ESC grounding kit for RF PVD chamber |
JP5654939B2 (ja) * | 2011-04-20 | 2015-01-14 | 株式会社アルバック | 成膜装置 |
TWI568319B (zh) * | 2011-10-05 | 2017-01-21 | 應用材料股份有限公司 | 電漿處理設備及其蓋組件(二) |
US9685297B2 (en) | 2012-08-28 | 2017-06-20 | Advanced Energy Industries, Inc. | Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system |
US9210790B2 (en) | 2012-08-28 | 2015-12-08 | Advanced Energy Industries, Inc. | Systems and methods for calibrating a switched mode ion energy distribution system |
US9105447B2 (en) | 2012-08-28 | 2015-08-11 | Advanced Energy Industries, Inc. | Wide dynamic range ion energy bias control; fast ion energy switching; ion energy control and a pulsed bias supply; and a virtual front panel |
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KR101939505B1 (ko) | 2014-08-08 | 2019-01-16 | 캐논 아네르바 가부시키가이샤 | 스퍼터 장치 및 처리 장치 |
CN108291293A (zh) * | 2015-12-09 | 2018-07-17 | 应用材料公司 | 被配置为用于在基板上进行溅射沉积的系统、用于溅射沉积腔室的屏蔽装置及用于在溅射沉积腔室中提供电屏蔽的方法 |
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TWI767088B (zh) | 2017-11-17 | 2022-06-11 | 新加坡商Aes全球公司 | 電漿處理系統,用於調變其中的電源的控制方法及相關的電漿處理控制系統 |
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WO2019099925A1 (en) | 2017-11-17 | 2019-05-23 | Advanced Energy Industries, Inc. | Spatial and temporal control of ion bias voltage for plasma processing |
JP7466460B2 (ja) * | 2018-01-29 | 2024-04-12 | アプライド マテリアルズ インコーポレイテッド | Pvdプロセスにおける粒子低減のためのプロセスキットの形状寸法 |
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CN112334591B (zh) * | 2018-12-27 | 2023-07-18 | 株式会社爱发科 | 防附着构件和真空处理装置 |
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US20210391146A1 (en) * | 2020-06-11 | 2021-12-16 | Applied Materials, Inc. | Rf frequency control and ground path return in semiconductor process chambers |
US11670487B1 (en) | 2022-01-26 | 2023-06-06 | Advanced Energy Industries, Inc. | Bias supply control and data processing |
US12046448B2 (en) | 2022-01-26 | 2024-07-23 | Advanced Energy Industries, Inc. | Active switch on time control for bias supply |
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US11978613B2 (en) | 2022-09-01 | 2024-05-07 | Advanced Energy Industries, Inc. | Transition control in a bias supply |
Family Cites Families (10)
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JP3086095B2 (ja) * | 1992-12-22 | 2000-09-11 | キヤノン株式会社 | スパッタリング装置 |
JP3563095B2 (ja) * | 1993-10-28 | 2004-09-08 | 株式会社ルネサステクノロジ | 半導体装置の製造方法 |
JP2954028B2 (ja) | 1996-08-16 | 1999-09-27 | 山形日本電気株式会社 | スパッタリング装置 |
JP4108354B2 (ja) * | 2001-03-30 | 2008-06-25 | キヤノンアネルバ株式会社 | スパッタリング装置 |
JP4406188B2 (ja) * | 2002-06-12 | 2010-01-27 | キヤノンアネルバ株式会社 | 成膜装置 |
JP4451684B2 (ja) * | 2004-03-17 | 2010-04-14 | キヤノンアネルバ株式会社 | 真空処理装置 |
CN1315150C (zh) * | 2004-11-12 | 2007-05-09 | 哈尔滨工业大学 | 等离子体脉冲注入的装置 |
CN101802998B (zh) | 2007-09-11 | 2014-07-30 | 佳能安内华股份有限公司 | 静电夹具 |
WO2009078094A1 (ja) | 2007-12-18 | 2009-06-25 | Canon Anelva Corporation | プラズマ処理装置 |
JP5324251B2 (ja) | 2008-05-16 | 2013-10-23 | キヤノンアネルバ株式会社 | 基板保持装置 |
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2009
- 2009-07-30 CN CN2009801292803A patent/CN102105618B/zh active Active
- 2009-07-30 JP JP2010504100A patent/JP4580040B2/ja active Active
- 2009-07-30 WO PCT/JP2009/003612 patent/WO2010013476A1/ja active Application Filing
- 2009-07-30 KR KR1020107014755A patent/KR101216790B1/ko active IP Right Grant
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2010
- 2010-03-02 JP JP2010045946A patent/JP5189609B2/ja active Active
- 2010-12-28 US US12/979,968 patent/US8303785B2/en active Active
Also Published As
Publication number | Publication date |
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KR20100084705A (ko) | 2010-07-27 |
US20110089023A1 (en) | 2011-04-21 |
US8303785B2 (en) | 2012-11-06 |
CN102105618A (zh) | 2011-06-22 |
JP2010163690A (ja) | 2010-07-29 |
WO2010013476A1 (ja) | 2010-02-04 |
JPWO2010013476A1 (ja) | 2012-01-05 |
KR101216790B1 (ko) | 2012-12-28 |
CN102105618B (zh) | 2012-07-25 |
JP4580040B2 (ja) | 2010-11-10 |
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