JP5309161B2 - プラズマcvd装置 - Google Patents
プラズマcvd装置 Download PDFInfo
- Publication number
- JP5309161B2 JP5309161B2 JP2010546584A JP2010546584A JP5309161B2 JP 5309161 B2 JP5309161 B2 JP 5309161B2 JP 2010546584 A JP2010546584 A JP 2010546584A JP 2010546584 A JP2010546584 A JP 2010546584A JP 5309161 B2 JP5309161 B2 JP 5309161B2
- Authority
- JP
- Japan
- Prior art keywords
- chamber
- plasma cvd
- cvd apparatus
- chamber block
- shower plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005268 plasma chemical vapour deposition Methods 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims description 38
- 238000000605 extraction Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 16
- 230000008569 process Effects 0.000 description 14
- 239000010408 film Substances 0.000 description 10
- 230000008878 coupling Effects 0.000 description 9
- 238000010168 coupling process Methods 0.000 description 9
- 238000005859 coupling reaction Methods 0.000 description 9
- 238000005304 joining Methods 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000009434 installation Methods 0.000 description 3
- 239000012212 insulator Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000010292 electrical insulation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000001965 increasing effect Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
- H01J2237/3321—CVD [Chemical Vapor Deposition]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Plasma & Fusion (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Physical Vapour Deposition (AREA)
Description
上記第1のチャンバブロックは、第1の側面と、第2の側面とを有する。上記第1の側面は、第1の方向と交差する第1の開口を有する。上記第2の側面は、基板を通過させるための第1の搬送口を有する。
上記第2のチャンバブロックは、第3の側面と、第4の側面とを有する。上記第3の側面は、上記第1の方向と交差する第2の開口を有する。上記第4の側面は、上記第1の方向において上記第3の側面に対向する。上記第2のチャンバブロックは、上記第3の側面が上記第1の側面と接合されることで、上記第1及び第2の開口を含む真空排気可能な内部空間を形成する。
上記シャワープレートは、上記第1のチャンバブロックの上記第1の方向に沿う第1の長さ及び上記第2のチャンバブロックの上記第1の方向に沿う第2の長さよりも大きく、かつ、上記第1の長さと上記第2の長さの和よりも小さい第3の長さを有する。上記シャワープレートは、上記第3の長さ方向を上記第1の方向と平行にして上記内部空間に配置される。
上記取出し部は、上記内部空間から上記シャワープレートを搬出入するためのものであり、上記第4の側面に設けられる。
上記第1のチャンバブロックは、第1の方向と交差する第1の開口が形成された第1の側面を有する。
上記第2のチャンバブロックは、第2の側面と、第3の側面とを有する。上記第2の側面は、上記第1の方向と交差する第2の開口を有する。上記第3の側面は、上記第1の方向において上記第2の側面に対向する。上記第2のチャンバブロックは、上記第2の側面が上記第1の側面と接合されることで、上記第1及び第2の開口を含む真空排気可能な内部空間を形成する。
上記シャワープレートは、上記第1及び第2の開口を貫通するように上記内部空間に配置される。
上記取出し部は、上記内部空間から上記シャワープレートを上記第1の方向に沿って取り出すためのものであり、上記第3の側面に設けられる。
これにより、取出し部の構成を簡素化でき、蓋部材を開閉するだけでシャワープレートの搬送作業を実行することができる。蓋部材は、機械式あるいは電磁式に開閉するバルブで構成することも可能である。
この構成により、第1の電極プレートと軸部材との連結操作及びその解除操作によって、内部空間へのシャワープレートの取り付け及び取り外しを行うことが可能となる。
第2の電極プレートは、基板を支持するステージとして用いることができる。第2の電極プレートは、基板を所定温度に加熱するヒータを内蔵してもよい。
これにより、シャワープレートのみならず、第2の電極プレートの取り外し作業も容易に行うことが可能となる。
これにより、上記開口部を介して真空チャンバの内部空間に基板を搬送することが可能となる。
2…搬送室
3…プラズマCVD装置
4…ゲートバルブ
5…取出し部
6…電極ユニット
7…ステージユニット
8…処理室(内部空間)
9…軸部
10…真空チャンバ
11…第1のチャンバブロック
11a、12a…開口(第1、第2の開口)
11b…開口部
12b…搬送口
11c、12c…窓部
12…第2のチャンバブロック
13…シール部材
18…支持軸
19…結合部
21、22…蓋体
23…蓋部材
61…シャワープレート
62…電極プレート
71…ステージ
72…ヒータ
Claims (4)
- 第1の方向と交差する第1の開口が形成された第1の側面を有する第1のチャンバブロックと、
前記第1の方向と交差する第2の開口が形成された第2の側面と、前記第1の方向において前記第2の側面に対向する第3の側面とを有し、前記第2の側面が前記第1の側面と環状のシール部材を介して接合されることで、前記第1及び第2の開口を含む真空排気可能な内部空間を形成する第2のチャンバブロックと、
前記第1及び第2の開口を貫通するように前記内部空間に配置されたシャワープレートと、前記シャワープレートと一体的に取り付けられた第1の電極プレートとを有する電極ユニットと、
前記第1のチャンバブロック又は前記第2のチャンバブロックを貫通し、前記第1の電極プレートに対して着脱自在に連結された軸部材と、
前記第3の側面に設けられ、前記内部空間から前記電極ユニットを前記第1の方向に沿って取り出すための取出し部と
を具備し、
前記第1のチャンバブロックは、
前記第1の方向と直交し、前記軸部材の軸方向である第2の方向において第1の長さで開口する基板搬送用の開口部が形成され、前記第1の側面と前記第1の方向に対向する第4の側面を有し、
前記取出し部は、
前記第3の側面に形成され、前記第2の方向において前記第1の長さより長い第2の長さで開口し、前記電極ユニットが通過可能な搬送口と、
前記搬送口を開閉自在な蓋部材とを有する
プラズマCVD装置。 - 請求項1に記載のプラズマCVD装置であって、
前記基板を支持し前記第2の方向において前記シャワープレートと対向する第2の電極プレートを有し、前記第1及び第2の開口を貫通するように前記内部空間に配置されるステージユニットをさらに具備する
プラズマCVD装置。 - 請求項2に記載のプラズマCVD装置であって、
前記搬送口は、前記ステージユニットが通過可能な大きさに形成されている
プラズマCVD装置。 - 請求項1に記載のプラズマCVD装置であって、
前記第1のチャンバブロックは、
前記第1及び第4の側面とを接続する第1の上面に形成された第1の窓部と、
前記第1の窓部を開閉自在な第1の蓋体とを有し、
前記第2のチャンバブロックは、
前記第2及び第3の側面とを接続する第2の上面に形成された第2の窓部と、
前記第2の窓部を開閉自在な第2の蓋体とを有する
プラズマCVD装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010546584A JP5309161B2 (ja) | 2009-01-14 | 2010-01-12 | プラズマcvd装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009006104 | 2009-01-14 | ||
JP2009006104 | 2009-01-14 | ||
JP2010546584A JP5309161B2 (ja) | 2009-01-14 | 2010-01-12 | プラズマcvd装置 |
PCT/JP2010/000106 WO2010082467A1 (ja) | 2009-01-14 | 2010-01-12 | プラズマcvd装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2010082467A1 JPWO2010082467A1 (ja) | 2012-07-05 |
JP5309161B2 true JP5309161B2 (ja) | 2013-10-09 |
Family
ID=42339720
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010546584A Active JP5309161B2 (ja) | 2009-01-14 | 2010-01-12 | プラズマcvd装置 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5309161B2 (ja) |
KR (1) | KR101338629B1 (ja) |
CN (1) | CN102272350B (ja) |
TW (1) | TWI419993B (ja) |
WO (1) | WO2010082467A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8900403B2 (en) | 2011-05-10 | 2014-12-02 | Lam Research Corporation | Semiconductor processing system having multiple decoupled plasma sources |
SG193614A1 (en) * | 2011-05-10 | 2013-10-30 | Lam Res Corp | Semiconductor processing system having multiple decoupled plasma sources |
JP6812264B2 (ja) * | 2017-02-16 | 2021-01-13 | 東京エレクトロン株式会社 | 真空処理装置、及びメンテナンス装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006137995A (ja) * | 2004-11-12 | 2006-06-01 | Ulvac Japan Ltd | 真空チャンバ |
JP2007067218A (ja) * | 2005-08-31 | 2007-03-15 | Tokyo Electron Ltd | 基板処理装置および基板処理システム |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4353601B2 (ja) * | 2000-01-04 | 2009-10-28 | 株式会社アルバック | プラズマcvd装置 |
JP2007019284A (ja) * | 2005-07-08 | 2007-01-25 | Sony Corp | プラズマcvd装置及び薄膜形成方法 |
JP4791110B2 (ja) * | 2005-09-02 | 2011-10-12 | 東京エレクトロン株式会社 | 真空チャンバおよび真空処理装置 |
JP4916220B2 (ja) * | 2006-05-31 | 2012-04-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びそれに用いられる電極 |
JP5551346B2 (ja) * | 2008-06-10 | 2014-07-16 | 東京エレクトロン株式会社 | チャンバ及び処理装置 |
-
2010
- 2010-01-12 KR KR1020117013488A patent/KR101338629B1/ko active IP Right Grant
- 2010-01-12 JP JP2010546584A patent/JP5309161B2/ja active Active
- 2010-01-12 CN CN201080004227.3A patent/CN102272350B/zh active Active
- 2010-01-12 WO PCT/JP2010/000106 patent/WO2010082467A1/ja active Application Filing
- 2010-01-13 TW TW099100799A patent/TWI419993B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006137995A (ja) * | 2004-11-12 | 2006-06-01 | Ulvac Japan Ltd | 真空チャンバ |
JP2007067218A (ja) * | 2005-08-31 | 2007-03-15 | Tokyo Electron Ltd | 基板処理装置および基板処理システム |
Also Published As
Publication number | Publication date |
---|---|
KR20110084530A (ko) | 2011-07-25 |
TWI419993B (zh) | 2013-12-21 |
KR101338629B1 (ko) | 2013-12-06 |
CN102272350B (zh) | 2014-12-24 |
TW201033395A (en) | 2010-09-16 |
JPWO2010082467A1 (ja) | 2012-07-05 |
WO2010082467A1 (ja) | 2010-07-22 |
CN102272350A (zh) | 2011-12-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5189609B2 (ja) | プラズマ処理装置 | |
US10190214B2 (en) | Deposition apparatus and deposition system having the same | |
KR101284961B1 (ko) | 평판 기판용 처리 시스템 | |
US7534301B2 (en) | RF grounding of cathode in process chamber | |
CN109314034B (zh) | 真空处理室及制造真空处理的板形基底的方法 | |
US20040149214A1 (en) | Vacuum processing apparatus | |
JP5309161B2 (ja) | プラズマcvd装置 | |
KR20170092135A (ko) | 플라즈마 처리 용기 및 플라즈마 처리 장치 | |
WO2000055894A1 (fr) | Appareil de traitement au plasma et son procede d'entretien | |
KR20060047678A (ko) | 성막장치 및 성막장치를 사용하는 성막시스템 | |
JP4679051B2 (ja) | Cvd装置 | |
JP2017197781A (ja) | 成膜方法及び成膜装置 | |
EP3414357B1 (en) | An apparatus for atomic layer deposition | |
CN100593228C (zh) | 真空处理装置以及真空处理方法 | |
TW201028629A (en) | Heat treatment device | |
JP6567886B2 (ja) | プラズマ処理装置 | |
JP7108347B2 (ja) | 成膜装置 | |
CN104120410A (zh) | 一种反应腔室及等离子体加工设备 | |
JPH11260881A (ja) | 処理装置 | |
US20050150458A1 (en) | Reduced volume reactor | |
JP6969373B2 (ja) | プラズマ処理装置 | |
JP2015508565A (ja) | セグメント化されたアンテナアセンブリ | |
WO2023054044A1 (ja) | 表面処理装置 | |
JP5293220B2 (ja) | 成膜装置 | |
JP2001077172A (ja) | 基板の処理装置、基板の搬送体、並びに電子部品の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130312 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130416 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130522 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130618 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130701 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5309161 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |