JP4580040B2 - プラズマ処理装置および電子デバイスの製造方法 - Google Patents

プラズマ処理装置および電子デバイスの製造方法 Download PDF

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Publication number
JP4580040B2
JP4580040B2 JP2010504100A JP2010504100A JP4580040B2 JP 4580040 B2 JP4580040 B2 JP 4580040B2 JP 2010504100 A JP2010504100 A JP 2010504100A JP 2010504100 A JP2010504100 A JP 2010504100A JP 4580040 B2 JP4580040 B2 JP 4580040B2
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Prior art keywords
shield
plasma
outer member
processing apparatus
chamber
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Japanese (ja)
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JPWO2010013476A1 (ja
Inventor
洋 田中
和也 小長
栄作 渡邊
栄太郎 森本
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Canon Anelva Corp
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Canon Anelva Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
    • F04D—NON-POSITIVE-DISPLACEMENT PUMPS
    • F04D17/00—Radial-flow pumps, e.g. centrifugal pumps; Helico-centrifugal pumps
    • F04D17/08—Centrifugal pumps
    • F04D17/16—Centrifugal pumps for displacing without appreciable compression
    • F04D17/168—Pumps specially adapted to produce a vacuum
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
    • F16B—DEVICES FOR FASTENING OR SECURING CONSTRUCTIONAL ELEMENTS OR MACHINE PARTS TOGETHER, e.g. NAILS, BOLTS, CIRCLIPS, CLAMPS, CLIPS OR WEDGES; JOINTS OR JOINTING
    • F16B35/00—Screw-bolts; Stay-bolts; Screw-threaded studs; Screws; Set screws
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3441—Dark space shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • General Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2010504100A 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法 Active JP4580040B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2008197582 2008-07-31
JP2008197582 2008-07-31
PCT/JP2009/003612 WO2010013476A1 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2010045946A Division JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JP4580040B2 true JP4580040B2 (ja) 2010-11-10
JPWO2010013476A1 JPWO2010013476A1 (ja) 2012-01-05

Family

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JP2010504100A Active JP4580040B2 (ja) 2008-07-31 2009-07-30 プラズマ処理装置および電子デバイスの製造方法
JP2010045946A Active JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

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JP2010045946A Active JP5189609B2 (ja) 2008-07-31 2010-03-02 プラズマ処理装置

Country Status (5)

Country Link
US (1) US8303785B2 (enExample)
JP (2) JP4580040B2 (enExample)
KR (1) KR101216790B1 (enExample)
CN (1) CN102105618B (enExample)
WO (1) WO2010013476A1 (enExample)

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US9287092B2 (en) 2009-05-01 2016-03-15 Advanced Energy Industries, Inc. Method and apparatus for controlling ion energy distribution
US9287086B2 (en) 2010-04-26 2016-03-15 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution
US9767988B2 (en) 2010-08-29 2017-09-19 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
US11615941B2 (en) 2009-05-01 2023-03-28 Advanced Energy Industries, Inc. System, method, and apparatus for controlling ion energy distribution in plasma processing systems
US9435029B2 (en) * 2010-08-29 2016-09-06 Advanced Energy Industries, Inc. Wafer chucking system for advanced plasma ion energy processing systems
US9309594B2 (en) 2010-04-26 2016-04-12 Advanced Energy Industries, Inc. System, method and apparatus for controlling ion energy distribution of a projected plasma
US9362089B2 (en) 2010-08-29 2016-06-07 Advanced Energy Industries, Inc. Method of controlling the switched mode ion energy distribution system
JP5458177B2 (ja) 2010-12-28 2014-04-02 キヤノンアネルバ株式会社 半導体装置の製造方法および装置
US9087679B2 (en) * 2011-02-09 2015-07-21 Applied Materials, Inc. Uniformity tuning capable ESC grounding kit for RF PVD chamber
JP5654939B2 (ja) * 2011-04-20 2015-01-14 株式会社アルバック 成膜装置
TWI646869B (zh) * 2011-10-05 2019-01-01 美商應用材料股份有限公司 對稱電漿處理腔室
US9210790B2 (en) 2012-08-28 2015-12-08 Advanced Energy Industries, Inc. Systems and methods for calibrating a switched mode ion energy distribution system
US9685297B2 (en) 2012-08-28 2017-06-20 Advanced Energy Industries, Inc. Systems and methods for monitoring faults, anomalies, and other characteristics of a switched mode ion energy distribution system
JP6377060B2 (ja) 2012-08-28 2018-08-22 アドバンスト・エナジー・インダストリーズ・インコーポレイテッドＡｄｖａｎｃｅｄ Ｅｎｅｒｇｙ Ｉｎｄｕｓｔｒｉｅｓ， Ｉｎｃ． 広ダイナミックレンジイオンエネルギーバイアス制御、高速イオンエネルギー切り替え、イオンエネルギー制御およびパルスバイアス供給部、および仮想フロントパネル
DE102013005868A1 (de) * 2013-04-05 2014-10-09 Leybold Optics Gmbh Vorrichtung zur Vakuumbehandlung von Substraten
SG11201700850QA (en) 2014-08-08 2017-03-30 Canon Anelva Corp Sputtering apparatus and processing apparatus
CN108291293A (zh) * 2015-12-09 2018-07-17 应用材料公司 被配置为用于在基板上进行溅射沉积的系统、用于溅射沉积腔室的屏蔽装置及用于在溅射沉积腔室中提供电屏蔽的方法
CN109473331B (zh) * 2017-09-08 2022-11-25 北京北方华创微电子装备有限公司 腔室屏蔽装置和半导体处理腔
CN111788654B (zh) 2017-11-17 2023-04-14 先进工程解决方案全球控股私人有限公司 等离子体处理系统中的调制电源的改进应用
US11437221B2 (en) 2017-11-17 2022-09-06 Advanced Energy Industries, Inc. Spatial monitoring and control of plasma processing environments
PL3711081T3 (pl) 2017-11-17 2024-08-19 Aes Global Holdings, Pte. Ltd. Przestrzenne i czasowe sterowanie napięciem polaryzacji jonów do przetwarzania plazmowego
EP4231328A1 (en) 2017-11-17 2023-08-23 AES Global Holdings, Pte. Ltd. Synchronized pulsing of plasma processing source and substrate bias
US12230476B2 (en) 2017-11-17 2025-02-18 Advanced Energy Industries, Inc. Integrated control of a plasma processing system
KR102717559B1 (ko) * 2018-01-29 2024-10-14 어플라이드 머티어리얼스, 인코포레이티드 Pvd 프로세스들에서의 입자 감소를 위한 프로세스 키트 기하형상
KR102071807B1 (ko) * 2018-10-31 2020-01-30 동국대학교 경주캠퍼스 산학협력단 듀오플라즈마트론의 교체형 중간전극판
WO2020137489A1 (ja) * 2018-12-27 2020-07-02 株式会社アルバック 防着部材及び真空処理装置
WO2021011450A1 (en) 2019-07-12 2021-01-21 Advanced Energy Industries, Inc. Bias supply with a single controlled switch
US12125674B2 (en) 2020-05-11 2024-10-22 Advanced Energy Industries, Inc. Surface charge and power feedback and control using a switch mode bias system
US20210391146A1 (en) * 2020-06-11 2021-12-16 Applied Materials, Inc. Rf frequency control and ground path return in semiconductor process chambers
US11942309B2 (en) 2022-01-26 2024-03-26 Advanced Energy Industries, Inc. Bias supply with resonant switching
US11670487B1 (en) 2022-01-26 2023-06-06 Advanced Energy Industries, Inc. Bias supply control and data processing
US12046448B2 (en) 2022-01-26 2024-07-23 Advanced Energy Industries, Inc. Active switch on time control for bias supply
JP7776233B2 (ja) * 2022-06-16 2025-11-26 東京エレクトロン株式会社 成膜装置
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JP3086095B2 (ja) * 1992-12-22 2000-09-11 キヤノン株式会社 スパッタリング装置
JP3563095B2 (ja) * 1993-10-28 2004-09-08 株式会社ルネサステクノロジ 半導体装置の製造方法
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JP4108354B2 (ja) * 2001-03-30 2008-06-25 キヤノンアネルバ株式会社 スパッタリング装置
JP4406188B2 (ja) * 2002-06-12 2010-01-27 キヤノンアネルバ株式会社 成膜装置
JP4451684B2 (ja) * 2004-03-17 2010-04-14 キヤノンアネルバ株式会社 真空処理装置
CN1315150C (zh) * 2004-11-12 2007-05-09 哈尔滨工业大学 等离子体脉冲注入的装置
US7944677B2 (en) * 2007-09-11 2011-05-17 Canon Anelva Corporation Electrostatic chuck
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JP5324251B2 (ja) * 2008-05-16 2013-10-23 キヤノンアネルバ株式会社 基板保持装置

Also Published As

Publication number Publication date
KR101216790B1 (ko) 2012-12-28
CN102105618B (zh) 2012-07-25
JPWO2010013476A1 (ja) 2012-01-05
CN102105618A (zh) 2011-06-22
WO2010013476A1 (ja) 2010-02-04
KR20100084705A (ko) 2010-07-27
JP5189609B2 (ja) 2013-04-24
JP2010163690A (ja) 2010-07-29
US20110089023A1 (en) 2011-04-21
US8303785B2 (en) 2012-11-06

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