JP2010130009A - 歪み緩和Si1−xGex層を有する半導体ウェハをポリシングする方法 - Google Patents
歪み緩和Si1−xGex層を有する半導体ウェハをポリシングする方法 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 36
- 238000007517 polishing process Methods 0.000 title claims abstract description 5
- 229910006990 Si1-xGex Inorganic materials 0.000 title 1
- 229910007020 Si1−xGex Inorganic materials 0.000 title 1
- 238000005498 polishing Methods 0.000 claims abstract description 123
- 238000000034 method Methods 0.000 claims abstract description 60
- 239000002245 particle Substances 0.000 claims abstract description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 29
- 239000003082 abrasive agent Substances 0.000 claims abstract description 28
- 239000010703 silicon Substances 0.000 claims abstract description 28
- 239000002002 slurry Substances 0.000 claims abstract description 16
- 239000004744 fabric Substances 0.000 claims description 43
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 15
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 10
- 230000008569 process Effects 0.000 claims description 9
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 6
- 239000010432 diamond Substances 0.000 claims description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 6
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 3
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910000029 sodium carbonate Inorganic materials 0.000 claims description 3
- 239000007787 solid Substances 0.000 claims description 3
- 229910052582 BN Inorganic materials 0.000 claims description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 abstract description 13
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract description 13
- 239000000126 substance Substances 0.000 abstract description 10
- 239000003795 chemical substances by application Substances 0.000 abstract description 4
- 230000003750 conditioning effect Effects 0.000 abstract description 2
- 238000003754 machining Methods 0.000 abstract 2
- 235000012431 wafers Nutrition 0.000 description 33
- 230000007547 defect Effects 0.000 description 7
- 239000000654 additive Substances 0.000 description 5
- 239000002800 charge carrier Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 238000004377 microelectronic Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 239000003139 biocide Substances 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000003755 preservative agent Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 239000000080 wetting agent Substances 0.000 description 2
- BZSXEZOLBIJVQK-UHFFFAOYSA-N 2-methylsulfonylbenzoic acid Chemical compound CS(=O)(=O)C1=CC=CC=C1C(O)=O BZSXEZOLBIJVQK-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- -1 GeH 4 Chemical compound 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000005708 Sodium hypochlorite Substances 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000010668 complexation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000003574 free electron Substances 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000000414 obstructive effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- CHWRSCGUEQEHOH-UHFFFAOYSA-N potassium oxide Chemical compound [O-2].[K+].[K+] CHWRSCGUEQEHOH-UHFFFAOYSA-N 0.000 description 1
- 229910001950 potassium oxide Inorganic materials 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- SUKJFIGYRHOWBL-UHFFFAOYSA-N sodium hypochlorite Chemical compound [Na+].Cl[O-] SUKJFIGYRHOWBL-UHFFFAOYSA-N 0.000 description 1
- 239000010421 standard material Substances 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 230000017105 transposition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
【解決手段】0.55μm以下の粒径を有する固定結合した研磨材料を含有する研磨布を使用して、研磨装置中の半導体ウェハのSi1-xGex層を機械的に加工する第1の工程と、研磨布を使用してかつ研磨材料を含有する研磨剤スラリーを供給しながら、予め機械的に加工された前記半導体ウェハのSi1-xGex層を化学機械的に加工する第2の工程とを有する、Si1-xGexの歪み緩和層を備えた半導体ウェハをポリシングする方法
【選択図】なし
Description
Claims (22)
- 0.55μm以下の粒径を有する固定結合した研磨材料を含有する研磨布を使用して、研磨装置中の半導体ウェハのSi1-xGex層を機械的に加工する第1の工程と、研磨布を使用してかつ研磨材料を含有する研磨剤スラリーを供給しながら、予め機械的に加工された前記半導体ウェハのSi1-xGex層を化学機械的に加工する第2の工程とを有する、Si1-xGexの歪み緩和層を備えた半導体ウェハをポリシングする方法。
- 前記方法の第2の工程による前記研磨剤スラリー中の研磨材料の割合は、0.25〜20質量%である、請求項1記載の方法。
- 前記方法の第2の工程による前記研磨剤スラリー中の研磨材料の割合は、0.25〜1質量%である、請求項1又は2記載の方法。
- 前記研磨剤スラリー中の平均粒径は5〜300nmである、請求項1から3までのいずれか1項記載の方法。
- 前記研磨剤スラリー中の平均粒径は5〜50nmである、請求項4記載の方法。
- 前記研磨剤スラリー中の研磨材料は、アルミニウム、セリウム又はシリコンの元素の1種以上の酸化物からなる、請求項1から5までのいずれか1項記載の方法。
- 前記研磨剤スラリーはコロイド分散性ケイ酸を含有する、請求項6記載の方法。
- 前記方法の第2の工程も、固定結合した研磨材料を有する研磨布で行う、請求項1から7までのいずれか1項記載の方法。
- 0.55μm以下の粒度を有する微細な研磨材料を含有する研磨布を有する、請求項8記載の方法。
- 前記方法の第2の工程において、結合した研磨材料を含有しない一次研磨布を使用する、請求項1から9までのいずれか1項記載の方法。
- 第1の加工工程及び第2の加工工程を、同じ研磨布を使用して、1つの研磨装置の1つの研磨定盤で行うことを特徴とする、請求項9記載の方法。
- 機械的加工の第1の工程を、固体を有していない研磨溶液を供給しながら行う、請求項1から11までのいずれか1項記載の方法。
- 前記方法の第1の工程による研磨溶液は水である、請求項12記載の方法。
- 前記研磨溶液は脱塩水である、請求項13記載の方法。
- 研磨剤溶液は、炭酸ナトリウム(Na2CO3)、炭酸カリウム(K2CO3)、水酸化ナトリウム(NaOH)、水酸化カリウム(KOH)、水酸化アンモニウム(NH4OH)、テトラメチルアンモニウムヒドロキシド(TMAH)からなるグループから選択される1種又は数種の化合物を含有する、請求項1から14までのいずれか1項記載の方法。
- 前記研磨剤溶液中の前記化合物の割合は0.01〜10質量%である、請求項15記載の方法。
- 前記研磨剤溶液のpH値は10〜12.5の範囲内にある、請求項1から16までのいずれか1項記載の方法。
- 前記方法の第1の工程において、0.1μm以上でかつ0.55μm以下の平均粒径を有する結合した研磨材料を含有する研磨布を使用する、請求項1から17までのいずれか1項記載の方法。
- 前記方法の第1の工程において、0.1μm以上でかつ0.3μm以下の平均粒径を有する結合した研磨材料を含有する研磨布を使用する、請求項18記載の方法。
- 前記研磨布の研磨材料は、炭化ケイ素、窒化ホウ素、ダイヤモンド並びにセリウム、アルミニウム、ケイ素、ジルコニウム、鉄又はクロムの元素の酸化物の粒子からなるグループから選択される、請求項18又は19記載の方法。
- 本発明による方法を用いて加工される半導体ウェハは歪み緩和Si1-xGex層を有し、xは0.2以上である、請求項1から20までのいずれか1項記載の方法。
- ダイヤモンド、酸化アルミニウム及び炭化ケイ素からなるグループから選択される0.1〜0.55μmの平均粒径を有する研磨材料を含有する研磨布の、シリコン−ゲルマニウム層の機械的加工のための使用。
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102008059044A DE102008059044B4 (de) | 2008-11-26 | 2008-11-26 | Verfahren zum Polieren einer Halbleiterscheibe mit einer verspannt-relaxierten Si1-xGex-Schicht |
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JP2010130009A true JP2010130009A (ja) | 2010-06-10 |
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JP2009255451A Pending JP2010130009A (ja) | 2008-11-26 | 2009-11-06 | 歪み緩和Si1−xGex層を有する半導体ウェハをポリシングする方法 |
Country Status (6)
Country | Link |
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US (1) | US8338302B2 (ja) |
JP (1) | JP2010130009A (ja) |
KR (1) | KR101111051B1 (ja) |
CN (1) | CN101733699B (ja) |
DE (1) | DE102008059044B4 (ja) |
TW (1) | TWI433226B (ja) |
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KR20140094625A (ko) | 2011-11-25 | 2014-07-30 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
KR20140094624A (ko) | 2011-11-25 | 2014-07-30 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
WO2015045757A1 (ja) | 2013-09-30 | 2015-04-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2015102101A1 (ja) * | 2014-01-06 | 2015-07-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、および半導体ウェハの製造方法 |
US9376594B2 (en) | 2012-03-16 | 2016-06-28 | Fujimi Incorporated | Polishing composition |
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DE102011107657A1 (de) * | 2011-07-12 | 2013-01-17 | Nasp Iii/V Gmbh | Monolithische integrierte Halbleiterstruktur |
EP2554612A1 (en) | 2011-08-01 | 2013-02-06 | Basf Se | A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5 |
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JP7488672B2 (ja) * | 2020-03-19 | 2024-05-22 | 株式会社フジミインコーポレーテッド | 研磨方法および半導体基板の製造方法 |
CN111805413A (zh) * | 2020-07-23 | 2020-10-23 | 中国科学院微电子研究所 | 化学机械研磨方法 |
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KR20140094625A (ko) | 2011-11-25 | 2014-07-30 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
KR20140094624A (ko) | 2011-11-25 | 2014-07-30 | 가부시키가이샤 후지미인코퍼레이티드 | 연마용 조성물 |
US9238755B2 (en) | 2011-11-25 | 2016-01-19 | Fujima Incorporated | Polishing composition |
US9688884B2 (en) | 2011-11-25 | 2017-06-27 | Fujimi Incorporated | Polishing composition |
US9816010B2 (en) | 2011-11-25 | 2017-11-14 | Fujimi Incorporated | Polishing composition |
US9376594B2 (en) | 2012-03-16 | 2016-06-28 | Fujimi Incorporated | Polishing composition |
WO2015045757A1 (ja) | 2013-09-30 | 2015-04-02 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
WO2015102101A1 (ja) * | 2014-01-06 | 2015-07-09 | 株式会社フジミインコーポレーテッド | 研磨用組成物、および半導体ウェハの製造方法 |
Also Published As
Publication number | Publication date |
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US8338302B2 (en) | 2012-12-25 |
TWI433226B (zh) | 2014-04-01 |
KR20100059678A (ko) | 2010-06-04 |
CN101733699B (zh) | 2014-08-20 |
DE102008059044B4 (de) | 2013-08-22 |
CN101733699A (zh) | 2010-06-16 |
US20100130012A1 (en) | 2010-05-27 |
TW201021112A (en) | 2010-06-01 |
KR101111051B1 (ko) | 2012-02-14 |
DE102008059044A1 (de) | 2010-06-02 |
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