JP2010129868A - 電力用半導体モジュール及びその製造方法 - Google Patents
電力用半導体モジュール及びその製造方法 Download PDFInfo
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- JP2010129868A JP2010129868A JP2008304545A JP2008304545A JP2010129868A JP 2010129868 A JP2010129868 A JP 2010129868A JP 2008304545 A JP2008304545 A JP 2008304545A JP 2008304545 A JP2008304545 A JP 2008304545A JP 2010129868 A JP2010129868 A JP 2010129868A
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- metal base
- base plate
- hole
- power semiconductor
- semiconductor module
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 229910052751 metal Inorganic materials 0.000 claims abstract description 139
- 239000002184 metal Substances 0.000 claims abstract description 139
- 229920005989 resin Polymers 0.000 claims abstract description 75
- 239000011347 resin Substances 0.000 claims abstract description 75
- 238000012546 transfer Methods 0.000 claims abstract description 50
- 238000003780 insertion Methods 0.000 claims abstract description 43
- 230000037431 insertion Effects 0.000 claims abstract description 43
- 238000001816 cooling Methods 0.000 claims abstract description 29
- 238000000034 method Methods 0.000 claims description 12
- 238000000465 moulding Methods 0.000 claims description 12
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 238000004891 communication Methods 0.000 claims description 2
- 238000007789 sealing Methods 0.000 abstract description 23
- 238000009413 insulation Methods 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 11
- 239000010949 copper Substances 0.000 description 9
- 239000000843 powder Substances 0.000 description 9
- 229910052802 copper Inorganic materials 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000004809 Teflon Substances 0.000 description 5
- 229920006362 Teflon® Polymers 0.000 description 5
- 239000000919 ceramic Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229920006122 polyamide resin Polymers 0.000 description 5
- 238000001721 transfer moulding Methods 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
- 239000003822 epoxy resin Substances 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 229920000647 polyepoxide Polymers 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910000881 Cu alloy Inorganic materials 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000004519 grease Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910000640 Fe alloy Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000032798 delamination Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
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- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/565—Moulds
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- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
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- H01L23/433—Auxiliary members in containers characterised by their shape, e.g. pistons
- H01L23/4334—Auxiliary members in encapsulations
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- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
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- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
- H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H01L2224/45012—Cross-sectional shape
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
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- H01L2224/4809—Loop shape
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- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H01L2224/49105—Connecting at different heights
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- H01L2224/732—Location after the connecting process
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- Condensed Matter Physics & Semiconductors (AREA)
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- Ceramic Engineering (AREA)
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Abstract
【解決手段】金属ベース板1と高熱伝導絶縁層2と配線パターン3とから構成される回路基板4と、配線パターンの素子搭載部に接合された電力用半導体素子5と、電力用半導体素子と電気的に接続された配線パターンに設置され、且つ外部端子が挿入接続される筒状外部端子接続体7と、金属ベース板に形成され、金属ベース板の他方側の面に取り付けられる冷却フィンを金属ベース板に取り付け部材で固定するための貫通孔10と、金属ベース板の他方側の面と筒状外部端子接続体の上部とが露出され、貫通孔と連通し貫通孔の直径よりも大きい取り付け部材の挿入孔部12が形成され、且つ金属ベース板の一方側と側面及び電力用半導体素子を覆うように封止されたトランスファーモールド樹脂体11とを備えたものである。
【選択図】図1
Description
以下に、この発明の実施に形態1に係る電力用半導体モジュールを図1および図2に基づいて説明する。図1は図2のX−X線における断面図であり、図2は平面図である。
この発明の実施の形態2においては、図1に示す電力用半導体モジュールの製造方法を図5に基づいて説明する。図5は、金属ベース板1とこの金属ベース板1の一方側の面1aに接合された高熱伝導絶縁層である樹脂絶縁層2とこの樹脂絶縁層2における金属ベース板1に接合された面と反対側の面に設けられた配線パターン3とから構成される回路基板4に、電力用半導体素子5と筒状外部端子接続体7とを実装し、電力用半導体素子5と配線パターン3との間の各間を電気的に接続するワイヤーボンド9からなる回路形成手段を形成して構成体を製作する工程、金属ベース板1の他方側の面1bに冷却フィン13を固定するボルト14を配置するための貫通孔10を金属ベース板1に形成する工程、金属ベース板1に形成された貫通孔10と連通しその貫通孔10の直径よりも大きい直径のボルト14の挿入孔12を形成するために貫通孔10を成型物15で塞ぐ工程、並びに、成型物15で貫通孔10を塞いだ構成体を金型16内で、金属ベース板1の他方側の面1bを金型16の内底面に当接させ、筒状外部端子接続体7の上部と成型物15の上部を金型16の内上面に当接させ、金属ベース板1の側面と金型16の内側面と所定の間隔を持って配置し、金型16内の構成体と成型物15で形成される空隙部にモールド樹脂を充填してトランスファーモールド樹脂体11を形成する工程を施すことにより電力用半導体モジュールを製造する方法を示す。
この発明の実施の形態3を図7に基づいて説明する。この実施の形態3は上述した実施の形態1における回路基板4の別の構成体を示すものである。すなわち、樹脂絶縁層2の代わりに、高熱伝導絶縁層であるセラミック板21を設け、このセラミック板21の金属ベース板1側の面に金属放熱体である金属箔22が設けられ、セラミック板21の金属箔22が設けられた面と反対側の面に配線パターン3が設けられたものである。なお、セラミック板21の金属箔22ははんだ23により金属ベース板1上に接合される。その他の構成は上述した実施の形態1の構成と同様であり、この実施の形態3においても、上述した実施の形態1と同様の効果を奏するものである。なお、セラミック板21の材質としては、アルミナ、窒化アルミニウム、窒化珪素等が用いられる。
この発明の実施の形態4を図8〜図10に基づいて説明する。図8は断面図を示し、図9は平面図を示し、図10は冷却フィンを取り付けた状態を示す断面図ある。これら各図において、1〜11、13、14は上述した実施の形態1の構成と同様である。この実施の形態4と上述した実施の形態1との相違は、貫通孔10と連通しその貫通孔10の直径よりも大きいボルト14の挿入孔の形状が相違するものである。上述した実施の形態1における挿入孔12は円形であるのに対し、この実施の形態4における挿入孔24はトランスファーモールド樹脂体11の側面にも開口するよう形成されている。すなわち、上面方向だけでなく側面方向にも開口した挿入孔24である。
この発明の実施の形態5においては、図8に示す電力用半導体モジュールの製造方法を図11に基づいて説明する。この実施の形態5と上述した実施の形態2との相違は、貫通孔10と連通しその貫通孔10の直径よりも大きい直径のボルト14の挿入孔の形成方法が相違するものである。上述した実施の形態1における挿入孔12は円柱状の成型物15により円形の挿入孔12を形成するようにしたものに対し、この実施の形態5における挿入孔24はトランスファーモールド樹脂体11の側面にも開口するよう形成された成型物25を金型26に一体形成したものである。すなわち、上面方向だけでなく側面方向にも開口した挿入孔24を形成するものである。図12は金型26に一体形成される成型物25の形状を示している。
Claims (7)
- 金属ベース板とこの金属ベース板の一方側の面に接合された高熱伝導絶縁層とこの高熱伝導絶縁層における前記金属ベース板に接合された面と反対側の面に設けられた配線パターンとから構成される回路基板と、
前記配線パターンの素子搭載部に接合された電力用半導体素子と、
前記配線パターンに設置され、且つ外部端子が挿入接続される筒状外部端子接続体と、
前記金属ベース板の他方側の面と前記筒状外部端子接続体の上部とが露出され、且つ前記金属ベース板の前記一方側と側面、前記電力用半導体素子及び前記筒状外部端子接続体を覆うように封止されたトランスファーモールド樹脂体とを備え、
前記金属ベース板には、冷却フィンを前記金属ベース板の前記他方側の面に固定する取り付け部材を配置するための貫通孔が形成され、
前記トランスファーモールド樹脂体には、前記貫通孔と連通し前記貫通孔の直径よりも大きい前記取り付け部材の挿入孔が形成された
ことを特徴とする電力用半導体モジュール。 - 前記貫通孔の外周縁部における前記金属ベース板の金属面に、前記取り付け部材の頭部が接触し得るように、前記挿入孔の直径は前記貫通孔の直径よりも大きくしたことを特徴とする請求項1記載の電力用半導体モジュール。
- 前記金属ベース板上の前記トランスファーモールド樹脂体の高さは、前記挿入孔に挿入された前記取り付け部材の頭部の高さより高く形成されたことを特徴とする請求項1または2記載の電力用半導体モジュール。
- 前記挿入孔は、トランスファーモールド樹脂体の側面にも開口するように形成されたことを特徴とする請求項1〜3のいずれか1項に記載の電力用半導体モジュール。
- 金属ベース板とこの金属ベース板の一方側の面に接合された高熱伝導絶縁層とこの高熱伝導絶縁層における前記金属ベース板に接合された面と反対側の面に設けられた配線パターンとから構成される回路基板に、電力用半導体素子と筒状外部端子接続体とを実装し、前記電力用半導体素子と前記配線パターンとの間の各間を電気的に接続する回路形成手段を形成して構成体を製作する工程、
前記金属ベース板の他方側の面に冷却フィンを固定する取り付け部材を配置するための貫通孔を前記金属ベース板に形成する工程、
前記貫通孔と連通し前記貫通孔の直径よりも大きい前記取り付け部材の挿入孔を形成するために前記貫通孔を成型物で塞ぐ工程、並びに、
前記成型物で前記貫通孔を塞いだ前記構成体を金型内で、前記金属ベース板の前記他方側の面を前記金型の内底面に当接させ、前記筒状外部端子接続体の上部と前記成型物の上部を前記金型の内上面に当接させ、前記金属ベース板の側面と前記金型の内側面と所定の間隔を持って配置し、前記金型内の前記構成体と前記成型物で形成される空隙部にモールド樹脂を充填してトランスファーモールド樹脂体を形成する工程
を施す電力用半導体モジュールの製造方法。 - 前記成型物は、前記貫通孔に挿通される位置決め部を有することを特徴とする請求項5記載の電力用半導体モジュールの製造方法。
- 前記金型に前記成型物が一体形成されたことを特徴とする請求項5記載の電力用半導体モジュールの製造方法。
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Cited By (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012256746A (ja) * | 2011-06-09 | 2012-12-27 | Mitsubishi Electric Corp | 半導体装置 |
JP2013074254A (ja) * | 2011-09-29 | 2013-04-22 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2013110234A (ja) * | 2011-11-21 | 2013-06-06 | Toyota Industries Corp | 樹脂封止型パワー半導体モジュール |
US8810026B2 (en) | 2010-09-02 | 2014-08-19 | Toyota Jidosha Kabushiki Kaisha | Semiconductor module |
JP2014179376A (ja) * | 2013-03-13 | 2014-09-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
KR101533895B1 (ko) * | 2010-09-02 | 2015-07-03 | 도요타지도샤가부시키가이샤 | 반도체 모듈 |
JP2015185835A (ja) * | 2014-03-26 | 2015-10-22 | 株式会社デンソー | 半導体装置及びその製造方法 |
WO2016047083A1 (ja) * | 2014-09-22 | 2016-03-31 | 株式会社デンソー | 電子装置の製造方法、及び電子装置 |
JP2017010970A (ja) * | 2015-06-17 | 2017-01-12 | 三菱電機株式会社 | 半導体装置 |
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Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4576448B2 (ja) * | 2008-07-18 | 2010-11-10 | 三菱電機株式会社 | 電力用半導体装置 |
KR101077378B1 (ko) * | 2010-06-23 | 2011-10-26 | 삼성전기주식회사 | 방열기판 및 그 제조방법 |
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JP2012253125A (ja) * | 2011-06-01 | 2012-12-20 | Sumitomo Electric Ind Ltd | 半導体装置及び配線基板 |
US8586420B2 (en) * | 2011-09-29 | 2013-11-19 | Infineon Technologies Ag | Power semiconductor arrangement and method for producing a power semiconductor arrangement |
US20150001702A1 (en) * | 2012-05-17 | 2015-01-01 | Mitsubishi Electric Corporation | Semiconductor module and semiconductor device |
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US9529391B2 (en) | 2013-09-27 | 2016-12-27 | Apple Inc. | Button retention, assembly, and water sealing |
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US9148946B1 (en) * | 2014-03-28 | 2015-09-29 | Deere & Company | Electronic assembly for an inverter |
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US10165694B1 (en) | 2017-09-11 | 2018-12-25 | Apple Inc. | Concealed barometric vent for an electronic device |
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US10319659B2 (en) * | 2017-10-13 | 2019-06-11 | Semiconductor Components Industries, Llc | Semiconductor package and related methods |
US11107962B2 (en) * | 2018-12-18 | 2021-08-31 | Soulnano Limited | UV LED array with power interconnect and heat sink |
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US11682606B2 (en) * | 2019-02-07 | 2023-06-20 | Ford Global Technologies, Llc | Semiconductor with integrated electrically conductive cooling channels |
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US11614716B2 (en) | 2019-09-23 | 2023-03-28 | Apple Inc. | Pressure-sensing system for a wearable electronic device |
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US11860585B2 (en) | 2020-06-17 | 2024-01-02 | Apple Inc. | Wearable electronic device with a compressible air-permeable seal |
CN112271165A (zh) * | 2020-09-28 | 2021-01-26 | 华为技术有限公司 | 半导体封装结构及其制造方法和半导体器件 |
CN114326203A (zh) * | 2020-09-30 | 2022-04-12 | 京东方科技集团股份有限公司 | 显示装置和电路板 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5978537A (ja) * | 1982-10-27 | 1984-05-07 | Sanyo Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPS6288347A (ja) * | 1985-10-15 | 1987-04-22 | Shindengen Electric Mfg Co Ltd | 樹脂封止型半導体装置 |
JPS63165852A (ja) * | 1986-12-27 | 1988-07-09 | Dainippon Printing Co Ltd | 雑誌編集システム |
WO2008090734A1 (ja) * | 2007-01-22 | 2008-07-31 | Mitsubishi Electric Corporation | 電力用半導体装置 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5408128A (en) * | 1993-09-15 | 1995-04-18 | International Rectifier Corporation | High power semiconductor device module with low thermal resistance and simplified manufacturing |
JP4413649B2 (ja) * | 2004-03-03 | 2010-02-10 | 日産自動車株式会社 | 放熱構造体及びその製造方法 |
JP4455488B2 (ja) * | 2005-12-19 | 2010-04-21 | 三菱電機株式会社 | 半導体装置 |
JP2007184316A (ja) * | 2006-01-04 | 2007-07-19 | Toshiba Corp | 半導体装置 |
JP4569473B2 (ja) | 2006-01-04 | 2010-10-27 | 株式会社日立製作所 | 樹脂封止型パワー半導体モジュール |
JP2007235004A (ja) * | 2006-03-03 | 2007-09-13 | Mitsubishi Electric Corp | 半導体装置 |
DE102006045939B4 (de) * | 2006-09-28 | 2021-06-02 | Infineon Technologies Ag | Leistungshalbleitermodul mit verbesserter Temperaturwechselstabilität |
US7816781B2 (en) * | 2007-10-02 | 2010-10-19 | Infineon Technologies Ag | Power semiconductor module |
DE102008045615C5 (de) * | 2008-09-03 | 2018-01-04 | Infineon Technologies Ag | Verfahren zur Herstellung eines Leistungshalbleitermoduls |
-
2008
- 2008-11-28 JP JP2008304545A patent/JP4825259B2/ja active Active
-
2009
- 2009-08-04 US US12/535,222 patent/US8299601B2/en active Active
- 2009-09-23 DE DE200910042600 patent/DE102009042600B4/de active Active
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5978537A (ja) * | 1982-10-27 | 1984-05-07 | Sanyo Electric Co Ltd | 樹脂封止型半導体装置の製造方法 |
JPS6288347A (ja) * | 1985-10-15 | 1987-04-22 | Shindengen Electric Mfg Co Ltd | 樹脂封止型半導体装置 |
JPS63165852A (ja) * | 1986-12-27 | 1988-07-09 | Dainippon Printing Co Ltd | 雑誌編集システム |
WO2008090734A1 (ja) * | 2007-01-22 | 2008-07-31 | Mitsubishi Electric Corporation | 電力用半導体装置 |
Cited By (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9331001B2 (en) | 2010-09-02 | 2016-05-03 | Toyota Jidosha Kabushiki Kaisha | Semiconductor module |
US8810026B2 (en) | 2010-09-02 | 2014-08-19 | Toyota Jidosha Kabushiki Kaisha | Semiconductor module |
KR101533895B1 (ko) * | 2010-09-02 | 2015-07-03 | 도요타지도샤가부시키가이샤 | 반도체 모듈 |
US9029994B2 (en) | 2011-06-09 | 2015-05-12 | Mitsubishi Electric Corporation | Semiconductor device |
JP2012256746A (ja) * | 2011-06-09 | 2012-12-27 | Mitsubishi Electric Corp | 半導体装置 |
US9425065B2 (en) | 2011-09-29 | 2016-08-23 | Mitsubishi Electric Corporation | Semiconductor device and method of manufacture thereof |
JP2013074254A (ja) * | 2011-09-29 | 2013-04-22 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2013110234A (ja) * | 2011-11-21 | 2013-06-06 | Toyota Industries Corp | 樹脂封止型パワー半導体モジュール |
JP2014179376A (ja) * | 2013-03-13 | 2014-09-25 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP2015185835A (ja) * | 2014-03-26 | 2015-10-22 | 株式会社デンソー | 半導体装置及びその製造方法 |
WO2016047083A1 (ja) * | 2014-09-22 | 2016-03-31 | 株式会社デンソー | 電子装置の製造方法、及び電子装置 |
JP2017010970A (ja) * | 2015-06-17 | 2017-01-12 | 三菱電機株式会社 | 半導体装置 |
WO2018122897A1 (ja) * | 2016-12-26 | 2018-07-05 | 新電元工業株式会社 | 電子装置及び電子装置の製造方法 |
JP6321891B1 (ja) * | 2016-12-26 | 2018-05-09 | 新電元工業株式会社 | 電子装置及び電子装置の製造方法 |
JP6321892B1 (ja) * | 2016-12-26 | 2018-05-09 | 新電元工業株式会社 | 電子装置の製造方法及び電子装置 |
WO2018122894A1 (ja) * | 2016-12-26 | 2018-07-05 | 新電元工業株式会社 | 電子装置の製造方法及び電子装置 |
CN108604576A (zh) * | 2016-12-26 | 2018-09-28 | 新电元工业株式会社 | 电子装置的制造方法以及电子装置 |
US10347555B2 (en) | 2016-12-26 | 2019-07-09 | Shindengen Electric Manufacturing Co., Ltd. | Electronic device and method for manufacturing electronic device |
US10559478B2 (en) | 2016-12-26 | 2020-02-11 | Shindengen Electric Manufacturing Co., Ltd. | Method for manufacturing electronic device and electronic device |
CN108604576B (zh) * | 2016-12-26 | 2021-07-09 | 新电元工业株式会社 | 电子装置的制造方法以及电子装置 |
WO2022054560A1 (ja) * | 2020-09-14 | 2022-03-17 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
JP7450740B2 (ja) | 2020-09-14 | 2024-03-15 | 三菱電機株式会社 | 半導体装置、半導体装置の製造方法および電力変換装置 |
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DE102009042600A1 (de) | 2010-07-08 |
US8299601B2 (en) | 2012-10-30 |
DE102009042600B4 (de) | 2014-07-31 |
JP4825259B2 (ja) | 2011-11-30 |
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