WO2022056679A1 - 功率模组及其制造方法、转换器和电子设备 - Google Patents

功率模组及其制造方法、转换器和电子设备 Download PDF

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Publication number
WO2022056679A1
WO2022056679A1 PCT/CN2020/115360 CN2020115360W WO2022056679A1 WO 2022056679 A1 WO2022056679 A1 WO 2022056679A1 CN 2020115360 W CN2020115360 W CN 2020115360W WO 2022056679 A1 WO2022056679 A1 WO 2022056679A1
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Prior art keywords
power
board
chip
power module
driving board
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PCT/CN2020/115360
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English (en)
French (fr)
Inventor
骆文刚
侯召政
王军鹤
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华为技术有限公司
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Application filed by 华为技术有限公司 filed Critical 华为技术有限公司
Priority to JP2023516656A priority Critical patent/JP2023541621A/ja
Priority to CN202080015410.7A priority patent/CN115443531A/zh
Priority to EP20953540.0A priority patent/EP4203010A4/en
Priority to PCT/CN2020/115360 priority patent/WO2022056679A1/zh
Publication of WO2022056679A1 publication Critical patent/WO2022056679A1/zh
Priority to US18/183,367 priority patent/US20230215788A1/en

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Definitions

  • the present application relates to the technical field of chip packaging, and in particular, to a power module and a manufacturing method thereof, a converter and an electronic device.
  • a power module is a module formed by potting and encapsulating power electronic devices according to a certain functional combination.
  • the existing power module is connected to the drive board, and the switch of the power chip packaged in the power module is controlled by the drive board.
  • the parasitic parameters between the existing driving board and the power chip in the power module are too large, which affects the electrical performance of the power module.
  • the embodiment of the present application protects a power module, so as to reduce the parasitic parameters between the driving board and the power module, and improve the electrical performance of the power module.
  • Embodiments of the present application also protect a method for manufacturing a power module, a converter including the power module, and an electronic device including the converter.
  • the power module includes a power assembly and a drive board.
  • the power assembly includes a substrate, a power chip, and a package.
  • the power chip is disposed on the mounting surface of the substrate.
  • the package body encapsulates the power chip on the substrate, the drive board is arranged in the package body and is located on the side of the power chip facing away from the mounting surface, the drive board and the power chip electrical connection.
  • the driving board is arranged in the package of the power component, and the driving board is located on the side of the power chip facing away from the mounting surface, so as to reduce the distance between the driving board and the power chip, thereby shortening the distance between the driving board and the power chip.
  • the connection line between the power chip and the driver board can effectively reduce the parasitic parameters of the connection line between the power chip and the driver board, that is, reduce the parasitic parameters of the power module and improve the electrical performance of the power module.
  • arranging the driving board in the package of the power component that is, arranging the driving board inside the power component, can effectively reduce the plane area of the power module compared to arranging the driving board and the power component coplanar.
  • the thickness of the power component is usually more than 5mm, which is enough to allow the driver board to be embedded in the package of the power component without increasing the thickness of the power component, that is, In other words, arranging the driving board in the package body does not affect the thickness of the power component, which effectively improves the integration of the power module, reduces the package volume, and reduces the cost of the power module.
  • the parasitic parameters are mainly divided into two, one is the parasitic inductance, the other is the parasitic resistance.
  • the size is mainly affected by two aspects. One is the length of the connecting line. The longer the connecting line is, the greater the parasitic inductance is. The other is the area surrounded by the connecting line. The larger the area around the connecting line, the higher the parasitic inductance Big. For parasitic resistance, the longer the connection line is, the larger the parasitic resistance is.
  • Parasitic inductance and parasitic resistance improve the electrical performance of the power module.
  • the distance between the driving board and the power chip is smaller than the distance between the driving board and the surface of the package body facing away from the mounting surface. distance. In this embodiment, the distance between the driving board and the power chip is limited to be smaller than the distance between the driving board and the surface of the package body facing away from the mounting surface, so as to ensure the distance between the driving board and the power chip It is short enough to ensure that the parasitic parameters of the connection line between the driver board and the power chip are small enough, and the electrical performance of the power module is effectively improved.
  • the power component further includes a pin, the pin penetrates the driving board and part of the package body, and one end of the pin is disposed on the mounting surface, and is connected with the power chip. For electrical connection, the other end of the pin exposes the package body.
  • the pins are used to realize the electrical connection between the power chip and the circuit board.
  • the pins of the power chip can also be used to realize the electrical connection between the power chip and the driving board.
  • the pins may not penetrate through the driver board.
  • the power chip can also be connected to the circuit board through other structures other than pins.
  • the driver board is electrically connected to the power chip through the pins, that is, the pins are electrically connected to the driver board, so that the driver board and the power chip are electrically connected. connect.
  • the pin can realize the electrical connection between the power chip and the driving chip of the driving board at the same time, and also realize the electrical connection between the power chip and the external circuit board, which simplifies the structure of the power module.
  • the power module further includes a conductive member, the conductive member is located between the power chip and the driving board, and the power chip and the driving board are connected by the conductive member. Since the driving board is arranged in the package of the power component, the distance between the driving board and the power chip is reduced, thereby shortening the length of the connecting line (conducting member) connected between the driving board and the power chip, effectively reducing the power
  • the parasitic parameters of the connection lines of the module improve the electrical performance of the power module.
  • the conductive member is a copper pillar, and two ends of the copper pillar are electrically connected to the power chip and the driving board, respectively.
  • the length of the copper column is equal to the distance between the driver board and the power chip. It can be understood that the length direction of the copper column is the flow direction of the current in the copper column, so that the length of the copper column is the shortest and the power module is effectively reduced. The parasitic parameters of the connection line are improved, and the electrical performance of the power module is improved.
  • the conductive member is a lead frame
  • the lead frame includes a first end and a second end that are connected to each other, the first end is electrically connected to the power chip, and the second end is connected to the power chip.
  • the driver board is electrically connected.
  • the lead frame has a good current capacity, which can effectively reduce the parasitic parameters of the power module, and at the same time, can effectively increase the heat dissipation capacity of the power chip.
  • the electrical connection between the two power chips can also be electrically connected through the lead frame, which effectively reduces the manufacturing steps of the power module and improves the production efficiency of the power module.
  • the lead frame further includes a third end electrically connected to the first end, and the third end is electrically connected to the pin. That is to say, the lead frame can also realize the electrical connection between the pin and the power chip at the same time, so there is no need to introduce additional leads to connect the power chip and the pin, the structure of the power module is simpler, and the power module is also reduced. Compared with the lead frame, the lead frame has stronger current flow capacity and smaller parasitic parameters, and can also increase the heat dissipation effect of the power chip.
  • the package body is formed by a plastic sealing process.
  • the package body formed by the plastic encapsulation process has good sealing performance and can improve the moisture resistance and reliability of the package structure.
  • the power module further includes an encapsulation casing, the power component and the driving board are accommodated in the encapsulation casing, and an end of the pin facing away from the power chip protrudes from the Outside the package case, the package body is filled in the void in the package case through a case packaging process.
  • the package body is formed through a shell packaging process, which is simple and effectively improves the production efficiency of the power module.
  • the driving board and the power component form a package structure
  • the surface of the substrate facing away from the power chip is a back surface
  • the back surface exposes the package body
  • the power module further includes a heat sink
  • the heat sink is fixed on the package structure and in contact with the back surface.
  • the back of the substrate is in direct contact with the heat sink, which can quickly transfer the heat of the power chip to the heat sink, and then the heat sink to the outside, effectively improving the heat dissipation efficiency of the power chip.
  • the driving board includes a center area and an edge area surrounding the center area, the center area is disposed opposite the power component, and the package structure includes a mounting hole, and the mounting hole is located at the edge and penetrates through the driving board and the package body from the driving board toward the power chip, and the heat sink is connected to the package structure through the mounting hole.
  • the edge region and the package body located in the edge region can be understood as the mounting portion of the package structure, so that the package structure can be fixedly connected to other components through the mounting portion.
  • the surface of the edge region facing away from the power chip exposes the package body, so that screws can be fixed from the edge region facing away from the surface of the power chip.
  • the package body is a brittle material. If it is subjected to large stress, it is easy to break. Since there is no package body in the edge area, the screw directly transmits the locking force to the drive board, reducing the stress on the package body and preventing the screw from reducing the locking force. Risk of package cracking caused by direct transmission to the package.
  • the mounting surfaces of the two power components are arranged opposite to each other and are electrically connected, the packages of the two power components are connected, and the driving board is arranged on the two power components.
  • the components are electrically connected between and with at least one power component.
  • the driving board is embedded between the two power components to shorten the distance between the driving board and the power chips of the two power components, thereby shortening the connection between the driving board and the power chips of the two power components
  • the circuit can effectively reduce the parasitic parameters of the connection circuit and improve the electrical performance of the power module.
  • a second aspect of the present application protects a converter.
  • the converter includes a circuit board and the power module described in any one of the above embodiments, and the power module is electrically connected to the circuit board.
  • the integration degree and electrical performance of the converter with the power module provided by the present application are effectively improved.
  • a third aspect of the present application protects an electronic device, the electronic device includes the above-mentioned converter, and the converter is used to realize the conversion of an electrical signal of the electronic device.
  • the integration degree and electrical performance of the electronic device with the converter provided by the present application are effectively improved.
  • a fourth aspect of the present application protects a method for manufacturing a power module, wherein the method includes:
  • a first power board is provided, wherein the first power board includes a substrate and a power chip disposed on a mounting surface of the substrate;
  • a driving board is provided, the driving board is arranged on the side of the power chip facing away from the mounting surface, and the driving board and the power chip are electrically connected to form a structure to be packaged;
  • the to-be-packaged structure is packaged by a package body to form a power module.
  • the driver board is arranged on the side of the power chip facing away from the mounting surface, and the driver board and the power chip are electrically connected to form a structure to be packaged, and then the structure to be packaged is packaged to A package structure is formed. That is to say, encapsulating the driver board and the power chip together can shorten the distance between the driver board and the power chip, thereby shortening the connection line between the power chip and the driver board, and effectively reducing the distance between the power chip and the driver board.
  • the parasitic parameters of the connection lines are to reduce the parasitic parameters of the power module and improve the electrical performance of the power module.
  • the driving board and the first power board are packaged together, which can effectively reduce the plane area of the power module compared with the coplanar arrangement of the driving board and the first power board.
  • the thickness of the first power board after packaging is usually more than 5mm, which is enough to allow the driver board and the first power board to be packaged together without increasing the first power.
  • the thickness of the board, that is to say, packaging the driver board and the first power board together will not affect the thickness after packaging, which effectively improves the integration of the power module, reduces the package volume, and reduces the cost of the power module. .
  • the manufacturing method further includes, before disposing the driving board on the side of the power chip facing away from the mounting surface, forming a surface with the power chip facing away from the mounting surface.
  • the driving board is electrically connected to the conductive member when the driving board is disposed on the side of the power chip facing away from the mounting surface.
  • the conductive member is used to connect the power chip and the drive board in the subsequent process, so as to reduce the parasitic parameters of the power module and improve the electrical performance of the power module.
  • the conductive member is a copper post, or the conductive member is a lead frame.
  • the length of the copper pillar is equal to the distance between the driver board and the power chip. It can be understood that the length direction of the copper pillar is the direction of current flow in the copper pillar, so that the length of the copper pillar is the shortest, that is, the driver board and the power chip.
  • the connection lines between them are the shortest, which effectively reduces the parasitic parameters of the connection lines of the power modules and improves the electrical performance of the power modules.
  • the conductive member is a lead frame
  • the electrical connection between the pin and the power chip, and between the two power chips is realized at the same time, so there is no need to introduce additional leads to connect the power chip and the pin and connect the two power chips.
  • the structure of the power module is simpler, and the production steps of the power module are also reduced, and the production efficiency of the power module is improved.
  • the lead frame has stronger current flow capacity and smaller parasitic parameters, and can also increase the power. The cooling effect of the chip.
  • the manufacturing method further includes fixing pins on the mounting surface while the power chip is disposed on the mounting surface of the substrate, and the driving board is disposed on the power chip When facing away from the mounting surface, the pins penetrate through the driving board. It is beneficial to reduce the production steps of the power module, reduce the production cost, and improve the production efficiency of the power module.
  • the manufacturing method further includes, after electrically connecting the driving board and the first power board, and then providing a second power board, and arranging the second power board on the driving board facing away from the One side of the first power board is electrically connected to the first power board to form a structure to be packaged.
  • the driving board is embedded between the two power boards to shorten the distance between the driving board and the power chips of the two power boards, thereby shortening the connection between the driving board and the power chips of the two power boards
  • the circuit can effectively reduce the parasitic parameters of the connection circuit and improve the electrical performance of the power module.
  • the structure to be encapsulated is encapsulated by a plastic encapsulation process.
  • the power module formed by the plastic encapsulation process in this embodiment has good sealing performance, which can improve the moisture resistance and reliability of the power module.
  • a specific method for encapsulating the structure to be encapsulated is: providing an encapsulation shell, and fixing the structure to be encapsulated in the encapsulation shell; pouring glue into the encapsulation shell to fill the encapsulation voids in the housing.
  • the package body is formed through a shell packaging process, which is simple and effectively improves the production efficiency of the power module.
  • the package body and the to-be-packaged structure constitute a package structure, and the surface of the substrate facing away from the power chip is a back surface.
  • the manufacturing method further includes providing a heat sink, and connecting the heat sink to the power chip.
  • the package structure is fixedly connected and in contact with the back surface, so as to improve the heat dissipation efficiency of the power chip.
  • the driving board includes a center area and an edge area surrounding the center area, the center area is disposed opposite the power component, the edge area includes a through hole, and the manufacturing method further includes packaging the
  • a mounting hole is formed through the through hole and the package body, and the specific step of fixing the heat sink to the package structure is that a screw passes through the mounting hole and is screwed to the heat sink.
  • the heat sink may also be fixed to the package structure by screwing or other fixing methods.
  • the package structure may also be connected and fixed with the heat sink by other connection methods such as bonding, snap connection, and the like.
  • the driving board is arranged in the package of the power component, and the driving board is located on the side of the power chip facing away from the mounting surface, so as to reduce the distance between the driving board and the power chip, thereby shortening the distance between the driving board and the power chip.
  • the connection line between the power chip and the driver board can effectively reduce the parasitic parameters of the connection line between the power chip and the driver board, that is, reduce the parasitic parameters of the power module and improve the electrical performance of the power module.
  • FIG. 1 is a schematic structural diagram of an electronic device provided by an embodiment of the present application.
  • Fig. 2 is the partial structure schematic diagram of the converter of the electronic device shown in Fig. 1;
  • FIG. 3 is a schematic structural diagram of a first embodiment of the power module of the converter shown in FIG. 2;
  • FIG. 4 is a schematic structural diagram of another embodiment of the power module shown in FIG. 3;
  • FIG. 5 is a schematic structural diagram of a second embodiment of the power module shown in FIG. 2;
  • FIG. 6 is a schematic structural diagram of a third embodiment of the power module shown in FIG. 2;
  • FIG. 7 is a schematic structural diagram of a fourth embodiment of the power module shown in FIG. 2;
  • FIG. 8 is a schematic flowchart of the manufacturing method of the power module shown in FIG. 3;
  • 9-21 are schematic flowcharts of the specific flow of the manufacturing method shown in FIG. 8 .
  • FIG. 1 is a schematic structural diagram of an electronic device 100 provided by an embodiment of the present application.
  • the electronic device 100 includes a converter 1 and a housing 2 .
  • the converter 1 is accommodated inside the housing 2 , and the converter 1 is used to convert electrical signals of the electronic device 100 .
  • the electronic device 100 in this embodiment includes, but is not limited to, the electronic device 100 having the converter 1 , such as a wind turbine, a photovoltaic generator, an electric vehicle, and a white goods.
  • the integration degree and electrical performance of the electronic device 100 with the converter 1 provided by the present application are effectively improved.
  • FIG. 2 is a partial structural schematic diagram of the converter 1 of the electronic device 100 shown in FIG. 1 .
  • the converter 1 includes a power module 10 and a circuit board 20 .
  • the power module 10 is mounted on the circuit board 20 , and the circuit board 20 is electrically connected to the power module 10 to realize the control of the power module 10 .
  • the converter 1 in this embodiment includes, but is not limited to, a DC-AC converter, a DC-DC converter, and other converters having a power module 10 .
  • the integration and electrical performance of the converter 1 having the power module 10 provided by the present application are effectively improved.
  • FIG. 3 is a schematic structural diagram of the first embodiment of the power module 10 of the converter 1 shown in FIG. 2 .
  • the power module 10 includes a power assembly 11 and a drive board 12 .
  • the power assembly 11 includes a substrate 111 , a power chip 112 and a package body 113 .
  • the power chip 112 is arranged on the mounting surface 1110 of the substrate 111 , and the package body 113 encapsulates the power chip 112 on the substrate.
  • the driver board 12 is arranged in the package body 113 and is located on the side of the power chip 112 facing away from the mounting surface 1110 to form a package structure 13 with the power component 11, and the driver board 12 and the power chip 112 are electrically connected to drive the power chip. 112 runs. It can be understood that the package body 113 encapsulates the driving board 12 and the power chip 112 on the substrate 111 to form the package structure 13 .
  • the driving board 12 is arranged in the package body 113 of the power component 11 and the driving board 12 is located on the side of the power chip 112 away from the mounting surface 1110 to reduce the size of the driving board 12 and the mounting surface 1110 .
  • the parasitic parameters improve the electrical performance of the power module 10 .
  • arranging the driving board 12 in the package body 113 of the power component 11 can effectively reduce the power mode compared to arranging the driving board 12 and the power component 11 coplanar.
  • the thickness of the power component 11 is usually more than 5 mm, which is sufficient to allow the driving board 12 to be embedded in the package body 113 of the power component 11 without increasing the thickness of the power component 11.
  • the thickness of the power module 11, that is to say, arranging the driving board 12 in the package body 113 will not affect the thickness of the power module 11, which effectively improves the integration of the power module 10 and reduces the volume of the package body 113.
  • the cost of the power module 10 is reduced.
  • the parasitic parameters are mainly divided into two, one is the parasitic inductance, the other is the parasitic resistance.
  • the size is mainly affected by two aspects. One is the length of the connecting line. The longer the connecting line is, the greater the parasitic inductance is. The other is the area surrounded by the connecting line. The larger the area around the connecting line, the higher the parasitic inductance Big. For parasitic resistance, the longer the connection line is, the larger the parasitic resistance is.
  • the substrate 111 includes a carrier board a1, a circuit layer a2 and a metal layer a3, the circuit layer a2 and the metal layer a3 are respectively formed on two opposite surfaces of the carrier board a1, and the line layer a2 and the metal layer a3 are respectively located on both sides of the carrier board a1 to Ensure the flatness of the carrier board a1 and prevent the carrier board a1 from warping.
  • the surface of the circuit layer a2 facing away from the carrier board a1 is the mounting surface 1110, that is, the power chip 112 is disposed on the surface of the circuit layer a2 facing away from the carrier board a1, and the surface of the substrate 111 facing away from the power chip 112 is the backside 1111, that is, the metal layer a3
  • the surface facing away from the carrier board a1 is the back surface 1111 , and the package body 113 is exposed from the back surface 1111 .
  • the circuit layer a2 can be used to realize the electrical connection between the power chip 112 and other devices, and can also be used to realize the electrical connection between the power chips 112 .
  • the metal layer a3 can effectively transfer the heat of the power chip 112 to the outside, thereby improving the heat dissipation efficiency of the power chip 112 .
  • the metal layer a3 can also effectively enhance the strength of the substrate 111 .
  • the material of the carrier plate a1 may be an insulating and heat-dissipating material such as ceramic, and the ceramic may be, for example, a ceramic material such as alumina, silicon nitride, or aluminum nitride.
  • the ceramic material has a good heat dissipation effect and can quickly dissipate heat for the power chip 112 .
  • the materials of the circuit layer a2 and the metal layer a3 are metal materials, such as copper, nickel, aluminum, etc., which can quickly dissipate heat for the power chip 112 .
  • the materials of the circuit layer a2 and the metal layer a3 may be the same or different.
  • the circuit layer a2 is also used to realize the electrical connection between the power chip 112 and other circuits.
  • the material of the carrier board a1 may also be other insulating materials.
  • the circuit layer a2 includes a first circuit a21 and a second circuit a22, the second circuit a22 is located on both sides of the first circuit a21, and the surfaces of the first circuit a21 and the second circuit a22 facing away from the carrier board a1 are formed together Mounting surface 1110.
  • the power chip 112 is arranged on the first circuit a21, and the power chip 112 is connected to the second circuit a22 through leads.
  • the power chip 112 can also be connected to the second circuit a22 through other conductive structures, and the second circuit a22 is connected to other components. That is to say, the second line a22 is used to realize the connection between the power chip 112 and other components.
  • the structure of the circuit layer a2 is not limited to the above description, and the specific structure of the circuit layer a2 can be set according to the connection requirements of the power chip 112 .
  • the number of power chips 112 may be one or more, and FIG. 3 uses two power chips 112 as an example.
  • the two power chips 112 are arranged on the first line a21 at intervals, and the two power chips 112 are electrically connected by wires, the wire connection process is mature and simple, and the cost is low.
  • the power chip 112 may be an Insulated Gate Bipolar Transistor (IGBT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and/or a diode.
  • IGBT Insulated Gate Bipolar Transistor
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • the power chip 112 can be fixed on the first line a21 by welding, bonding or other connection methods.
  • the power chip 112 when the power chip 112 needs to be electrically connected to the first circuit a21, the power chip 112 can be fixed to the first circuit a21 by welding, and when the power chip 112 does not need to be electrically connected to the first circuit a21, the power chip 112 can be bonded to the first circuit a21. It is fixed to the first line a21 in other ways.
  • the two power chips 112 may also be connected by connecting structures such as lead frames.
  • the package body 113 in this embodiment is formed by a plastic sealing process.
  • the material for forming the package body 113 may be, for example, a plastic material such as epoxy resin, silica gel, or the like.
  • the package body 113 formed by the plastic encapsulation process has good sealing performance, which can improve the moisture resistance and reliability of the package structure 13 .
  • the package body 113 is packaged from the back side 1111 of the substrate 111 to the side of the driver board 12 facing away from the power chip 112 , and the edge of the side of the driver board 12 facing away from the power chip 112 is not provided with the package body 113 to facilitate the power chip 112 cooperates with related structures.
  • the package body 113 may also be formed by other processes such as a case packaging process.
  • the power component 11 further includes a pin 114, the pin 114 penetrates the driving board 12 and part of the package body 113, and one end of the pin 114 is disposed on the mounting surface 1110 and is electrically connected to the power chip 112, and the other end of the pin 114 is exposed to the package Body 113.
  • the pin 114 is set on the corresponding second line a22, so as to be electrically connected to the corresponding power chip 112 through the second line a22, and the pin 114 is used to realize the connection between the power chip 112 and the circuit board 20 (FIG. 2). electrical connection.
  • the pins 114 of the power chip 112 may also be used to realize the electrical connection between the power chip 112 and the driving board 12 .
  • the pins 114 may not penetrate through the driving board 12 .
  • the power chip 112 may also be connected to the circuit board 20 through other structures other than the pins 114 .
  • the distance between the driving board 12 and the power chip 112 is smaller than the distance between the driving board 12 and the surface of the package body 113 facing away from the mounting surface 1110 .
  • the distance between the driving board 12 and the power chip 112 is limited to be smaller than the distance between the driving board 12 and the surface of the package body 133 facing away from the mounting surface 1110 to ensure that the distance between the driving board 12 and the power chip 112 is sufficiently short. Therefore, it is ensured that the parasitic parameters of the connection line between the driving board 12 and the power chip 112 are sufficiently small, and the electrical performance of the power module 10 is effectively improved.
  • the two pins 114 there are two pins 114 , and the two pins 114 are respectively arranged on the second lines a22 on both sides of the two power chips 112 .
  • the two power chips 112 are arranged between the two pins 114 .
  • the pins 114 can be fixed to the corresponding second circuit a22 by solder paste welding, or can be fixed to the corresponding second circuit a22 by ultrasonic welding, silver sintering or other connection methods.
  • the shape of the pins 114 may be cylindrical, elliptical, rectangular, polygonal or the like, and the shapes of the two pins 114 may be the same or different.
  • the material of the pin 114 may be Cu, Ag, Al and other metals or alloys with excellent electrical conductivity.
  • the arrangement of the power chip 112 and the pins 114 and the number of the pins 114 can also be set according to actual needs.
  • the driving board 12 includes a central area 121 and an edge area 122 surrounding the central area 121.
  • the central area 121 is arranged opposite to the power component 11.
  • the central area 121 is provided with electronic components such as a driving chip 123, a resistor 124, a capacitor and an optocoupler to form a driving circuit , the power chip 112 of the power component 11 is electrically connected to the driving chip 123 .
  • the package structure 13 includes mounting holes 131 located in the edge region 122 and penetrating the drive board 12 and the package body 113 from the drive board 12 toward the power chip 112 , and related components are connected to the package structure 13 through the mounting holes.
  • the edge region 122 and the package body 113 located in the edge region 122 can be understood as the mounting portion of the package structure 13, so that the package structure 13 can be fixedly connected to other components through the mounting portion.
  • the relevant components may also be fixed to the packaging structure 13 by screwing or other fixing methods.
  • the encapsulation structure 13 may also be connected and fixed with the relevant components by other connection methods such as bonding, snap connection, and the like.
  • small electronic components such as the resistor 124 , capacitor, and optocoupler may also be partially disposed in the edge region 122 .
  • the driving board 12 when the driving board 12 does not need to be fixed with related components, the driving board 12 may also include only the central region 121 , that is, the driving board 12 may not include the edge region 122 .
  • the surface of the edge region 122 facing away from the power chip 112 exposes the package body 113 , that is, the surface of the edge region 122 facing away from the power chip 112 is not provided with the package body 113 , so that the screws 132 can be removed from the edge region 122 It is fixed to the surface of the power chip 112 .
  • the package body 113 is a brittle material, which is easy to break if subjected to a large stress. Since the edge region 122 is not provided with the package body 113 , the screws 132 directly transmit the locking force to the driving board 12 , reducing the load on the package body 113 . stress to avoid the risk of cracking of the package body 113 caused by the screw 132 directly transmitting the locking force to the package body 113 .
  • the driving board 12 further includes through holes 125 for allowing the corresponding pins 114 to pass therethrough, so that the pins 114 penetrate through the driving board 12 to be connected to external related components.
  • the pin 114 penetrates through the through hole 125 and is not electrically connected with the through hole 125 .
  • the pins 114 may also be electrically connected to the driving board 12 through the through holes 125 to realize the electrical connection between the driving board 12 and the power chip 112 .
  • the power module 10 further includes a heat sink 14 , and the heat sink 14 is fixed to the package structure 13 and is in contact with the back surface 1111 .
  • the screws 132 are screwed to the heat sink 14 through the mounting holes 131 to fix the heat sink 14 to the package structure 13 .
  • the back surface 1111 of the substrate 111 is in direct contact with the heat sink 14 , which can quickly transfer the heat of the power chip 112 to the heat sink 14 , and then the heat sink 14 transmits it to the outside, thereby effectively improving the heat dissipation efficiency of the power chip 112 .
  • the power module 10 further includes a conductive member 15 , the conductive member 15 is located between the power chip 112 and the driving board 12 , and the power chip 112 and the driving board 12 are connected by the conductive member 15 .
  • the driving chip 123 on the driving board 12 and the power chip 112 of the power component 11 are connected through the conductive member 15 . Since the driving board 12 is arranged in the package body 113 of the power component 11 , the distance between the driving board 12 and the power chip 112 is reduced, and the connecting line (conductive member) between the driving board 12 and the power chip 112 is shortened. 15), the parasitic parameters of the connection lines of the power module 10 are effectively reduced, and the electrical performance of the power module 10 is improved.
  • the conductive member 15 in this embodiment has various implementations, as shown in detail below.
  • the conductive member is a copper pillar 15 , and two ends of the copper pillar 15 are electrically connected to the power chip 112 and the driving board 12 respectively. Specifically, both ends of the copper pillar 15 are electrically connected to the power chip 112 and the driver chip 123 on the driver board 12 .
  • the number of copper pillars 15 is adapted to the number of power chips 112 , and one copper pillar 15 corresponds to one power chip 112 .
  • the length of the copper pillar 15 is equal to the distance between the driving board 12 and the power chip 112.
  • the length direction of the copper pillar 15 is the flow direction of the current in the copper pillar 15, so that the length of the copper pillar 15 is the shortest,
  • the parasitic parameters of the connection lines of the power module 10 are effectively reduced, and the electrical performance of the power module 10 is improved.
  • the power chip 112 and the driving board 12 may also be connected by other conductive structures such as leads.
  • FIG. 4 is a schematic structural diagram of another embodiment of the power module 10 shown in FIG. 3 .
  • the conductive member is a lead frame 15 (Lead Frame, LF).
  • the lead frame 15 includes a first end 151 and a second end 152 that are connected to each other.
  • the first end 151 is electrically connected to the power chip 112, and the second end 151 is electrically connected to the power chip 112.
  • the terminal 152 is electrically connected to the driving board 12 .
  • the second end 152 is electrically connected to the driving chip 123 on the driving board 12 .
  • the number of lead frames 15 is adapted to the number of power chips 112 .
  • the lead frame 15 has a good current flow capability, which can effectively reduce the parasitic parameters of the power module 10 and can effectively increase the heat dissipation capability of the power chip 112 .
  • the electrical connection between the two power chips 112 can also be electrically connected through a lead frame, which effectively reduces the manufacturing steps of the power module 10 and improves the production efficiency of the power module 10.
  • the lead frame 15 further includes a third end 153 electrically connected to the first end 151 , and the third end 153 is electrically connected to the pin 114 .
  • the third end 153 is electrically connected to the second line a22 so as to be electrically connected to the pin 114 . That is to say, the lead frame 15 of this embodiment can also realize the electrical connection between the pins 114 and the power chip 112 at the same time, so there is no need to introduce additional wires to connect the power chip 112 and the pins 114 .
  • the structure of the power module 10 It is simpler, and also reduces the manufacturing steps of the power module 10, improves the production efficiency of the power module 10, and the lead frame 15 has stronger current flow capacity and smaller parasitic parameters than the lead, and can also increase the power chip 112. cooling effect.
  • FIG. 5 is a schematic structural diagram of the second embodiment of the power module 10 shown in FIG. 2 .
  • the structure of the power module 10 in this embodiment is substantially the same as that in the first embodiment.
  • the difference is that the power chip 112 and the driving board 12 in this embodiment are electrically connected through pins 114 , and the pins 114 and the driving board 12 are electrically connected , so that the driving board 12 and the power chip 112 are electrically connected.
  • the pin 114 penetrates the driving board 12 through the through hole 125 , it is electrically connected to the hole wall of the through hole 125 , and the hole wall of the through hole 125 is electrically connected to the driving chip 123 of the driving board 12 .
  • the end of the pin 114 away from the mounting surface 1110 is also connected to the circuit board 20 ( FIG.
  • the pin 114 can realize the electrical connection between the power chip 112 and the driving chip 123 of the driving board 12 at the same time, and can also realize The electrical connection between the power chip 112 and the external circuit board 20 simplifies the structure of the power module 10 .
  • the pins 114 may also only be used to realize the electrical connection between the power chip 112 and the driving chip 123 of the driving board 12 .
  • FIG. 6 is a schematic structural diagram of the third embodiment of the power module 10 shown in FIG. 2 .
  • the structure of the power module 10 in this embodiment is substantially the same as that in the first embodiment.
  • the power module 10 in this embodiment further includes an encapsulation casing 16 , and the power module 11 and the driving board 12 are accommodated in the encapsulation casing.
  • the package body 113 is filled in the void in the package housing 16 through a housing packaging process.
  • the encapsulation body 113 is formed by pouring encapsulation materials such as silicon gel or epoxy resin into the encapsulation housing 16 .
  • the package body 113 is formed through a shell packaging process, which is simple and effectively improves the production efficiency of the power module 10 .
  • the package casing 16 includes a bottom plate 161 and an upper cover 162 .
  • the upper cover 162 covers the bottom plate 161 and forms a space for accommodating the power components 11 and the driving board 12 together with the bottom plate 161 .
  • the metal layer a3 of the substrate 111 is fixed on the bottom plate 161 by welding, and one end of the pin 114 facing away from the power chip 112 extends out of the upper cover 162 .
  • the metal layer a3 is fixed on the base plate 161 by welding.
  • the metal layer a3 of the base plate 111 may also be fixed to the base plate 161 by other connection methods such as bonding and clamping.
  • the two power chips 112 and between the power chip 112 and the pins 114 are connected by wires, and the power chip 112 and the driving board 12 are connected by copper posts 15 .
  • the power chip 112 and the driving board 12 may also be connected by wires.
  • the two power chips 112 , between the power chip 112 and the pins 114 , and between the power chip 112 and the driving board 12 can be connected through the lead frame 15 .
  • the driving board 12 in this embodiment only includes a central area 121, and the central area 121 is provided with electronic components such as a driving chip 123, a resistor 124, a capacitor and an optocoupler to form a driving circuit.
  • the power chip 112 of the power component 11 is electrically connected to the driving chip 123. connect.
  • the heat sink 14 is fixedly connected to the base plate 161 and is in contact with the surface of the base plate 161 facing away from the substrate 111, so that the base plate 161 can quickly transfer the heat of the power chip 112 to the outside through the heat sink 14, thereby improving the heat dissipation efficiency of the power chip 112, and further
  • the electrical performance of the power module 10 is improved.
  • the radiator 14 may be fixed on the bottom plate 161 by one of connection methods such as screwing, clamping, and bonding.
  • the power module of this embodiment may not be provided with a heat sink.
  • FIG. 7 is a schematic structural diagram of the fourth embodiment of the power module 10 shown in FIG. 2 .
  • the structures of the power modules 10 in this embodiment are substantially the same as those in the first embodiment. The difference lies in that there are two power modules 11 in this embodiment, and the mounting surfaces 1110 of the two power modules 11 are disposed opposite to each other and are electrically connected. The packages 113 of the two power components 11 are connected, and the driving board 12 is disposed between the two power components 11 and is electrically connected to at least one power component 11 .
  • the drive board 12 can be embedded in the package body 113 of any one of the power components 11 , and the drive board 12 can also be embedded between the package bodies 113 of the two power components 11 , that is, a part of the drive board 12 is embedded It is disposed in the package body 113 of one power component 11 , and the other part is embedded in the package body 113 of the other power component 11 .
  • the driving board 12 is embedded between the two power components 11 to shorten the distance between the driving board 12 and the power chips 112 of the two power components 11 , thereby shortening the driving board 12 and the two power components 11
  • the connection lines between the power chips 112 can effectively reduce the parasitic parameters of the connection lines and improve the electrical performance of the power module 10 .
  • the surfaces of the metal layers a3 of the two power components 11 facing away from the driving board 12 are exposed to the package body 113 , so as to facilitate heat dissipation of the corresponding power chips 112 , improve the heat dissipation efficiency of the power chips 112 , and effectively improve the electrical power of the power module 10 . performance.
  • the two power components 11 are respectively a power component 11a and a power component 11b, and the power component 11a is electrically connected to the driving board 12, specifically, the power chip 112 of the power component 11a It is connected with the driving chip 123 on the driving board 12 through the lead frame 15 .
  • the power chip 112 of the power component 11a and the driving chip 123 on the driving board 12 may also be connected through conductive structures such as leads or metal posts.
  • the driving board 12 may also be electrically connected to the power chips 112 of the two power components 11 .
  • the connection between the driving board 12 and the power components 11a and 11b may be the same or different.
  • the power module 10 includes a conductive column 17 and a pin 114. Both ends of the conductive column 17 are respectively connected between the corresponding mounting surface 1110 of the power component 11a and the mounting surface 1110 of the power component 11b.
  • the terminals are respectively connected to the corresponding second line a22 of the power component 11a and the second line a22 of the power component 11b, and are respectively electrically connected to the power chip 112 of the power component 11a and the power chip 112 of the power component 11b.
  • One end of the pin 114 is fixed on the conductive column 17 of the second circuit a22 of the power component 11a, and the other end of the pin 114 protrudes from the side of the package body 113 of the power component 11a and/or the power component 11b to be related to the outside Device connections, such as circuit boards.
  • the number of the conductive pillars 17 and the pins 114 is two.
  • the two conductive pillars 17 are located on both sides of the two power chips 112 respectively, and the two pins 114 extend from the two sides of the package body 113 respectively. out of the package body 113 .
  • the conductive pillars 17 in this application are used to realize the electrical connection between the power component 11a and the power component 11b, and the pins 114 are used to realize the connection between the power component 11a and the power component 11b and external devices.
  • the numbers and specific structures of the pins 114 and the conductive pillars 17 are not limited to the above description.
  • the two power chips 112 of the power component 11 a and the power chips 112 and the conductive pillars 17 are connected through the lead frame 15 .
  • the two power chips 112 of the power component 11b and between the power chip 112 and the conductive column 17 are connected by wires.
  • the two power chips 112 of the power component 11a, and between the power chip 112 and the conductive pillars 17 may also be connected by wires or other conductive structures.
  • the two power chips 112 of the power component 11b, and between the power chip 112 and the conductive pillars 17 may also be connected by a lead frame 15 or other conductive structures.
  • the package body 113 of the power component 11a and the package body 113 of the power component 11b are integral structures, so that the connection strength of the package structure 13 formed by the power component 11a, the power component 11b and the driving board 12 is better.
  • the package body 113 of the power component 11a and the package body 113 of the power component 11b are formed into an integrated package body 113 through a plastic sealing process.
  • the package body 113 of the power component 11a and the package body 113 of the power component 11b may also be formed through a case packaging process.
  • the protection scope of the present application is not limited to the first to fourth embodiments above, and any combination of the first to fourth embodiments is also within the protection scope of the present application. Any combination is required.
  • FIG. 8 is a schematic flowchart of the manufacturing method of the power module shown in FIG. 3 .
  • the manufacturing method of the power module includes the following S110 to S130.
  • S110 Provide a first power board, wherein the first power board includes a substrate 111 and a power chip 112 disposed on a mounting surface 1110 of the substrate 111 .
  • the specific steps of providing the first power board 11c are as follows: first, as shown in FIG. 9, the substrate 111 is provided.
  • the substrate 111 includes a carrier board a1, a circuit layer a2 and a metal layer a3, the circuit layer a2 and the metal layer a3 are respectively formed on two opposite surfaces of the carrier board a1, and the line layer a2 and the metal layer a3 are respectively located on both sides of the carrier board a1 to Ensure the flatness of the carrier board a1 and prevent the carrier board a1 from warping.
  • the surface of the circuit layer a2 facing away from the carrier board a1 is the mounting surface 1110, that is, the power chip is disposed on the surface of the circuit layer a2 facing away from the carrier board a1, and the surface of the substrate 111 facing away from the power chip is the backside 1111, that is, the metal layer a3 facing away
  • the front surface of the carrier board a1 is the back surface 1111 .
  • the circuit layer a2 includes a first circuit a21 and a second circuit a22.
  • the second circuit a22 is located on both sides of the first circuit a21.
  • the surfaces of the first circuit a21 and the second circuit a22 facing away from the carrier board a1 together form the mounting surface 1110.
  • the structure of the circuit layer a2 is not limited to the above structure, and the specific structure of the circuit layer a2 can be set according to the connection requirements of the power chip.
  • the material of the carrier plate a1 may be an insulating and heat-dissipating material such as ceramic, and the ceramic may be, for example, a ceramic material such as alumina, silicon nitride, or aluminum nitride.
  • the ceramic material has a good heat dissipation effect, and can quickly dissipate heat for the power chip disposed on the substrate 111 in the subsequent process.
  • the materials of the circuit layer a2 and the metal layer a3 are metal materials, such as copper, nickel, aluminum, etc., which can quickly dissipate heat for the power chips disposed on the substrate 111 in subsequent processes, and can effectively enhance the strength of the substrate 111 .
  • the materials of the circuit layer a2 and the metal layer a3 may be the same or different.
  • the circuit layer a2 is also used to realize the electrical connection between the power chip provided on the substrate 111 in the subsequent process and other circuits.
  • the material of the carrier board a1 may also be other insulating materials.
  • the power chip 112 may be an Insulated Gate Bipolar Transistor (IGBT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) and/or a diode.
  • IGBT Insulated Gate Bipolar Transistor
  • MOSFET Metal Oxide Semiconductor Field Effect Transistor
  • the power chip 112 may be provided first, and then the power chip 112 may be provided.
  • the substrate 111 and the power chip 112 may be provided at the same time.
  • the power chip 112 is installed on the mounting surface 1110 of the substrate 111 . Specifically, solder is printed on the first line a21, and then the power chip 112 is soldered on the first line a21. In this embodiment, the number of power chips 112 is two. The two power chips 112 are arranged on the first line a21 at intervals. Of course, in other embodiments, one or more power chips 112 may also be soldered on the first line a21. Alternatively, the power chip 112 may also be fixed on the first line a21 by welding, bonding or other connection methods according to different conditions.
  • the power chip 112 when the power chip 112 needs to be electrically connected to the first circuit a21, the power chip 112 can be fixed to the first circuit a21 by welding, and when the power chip 112 does not need to be electrically connected to the first circuit a21, the power chip 112 can be bonded to the first circuit a21. It is fixed to the first line a21 in other ways.
  • the pins 114 are fixed to the mounting surface 1110 .
  • solder is printed on the first line a21 and solder is printed on the second line a22, and then the power chip 112 is soldered to the first line a21 and the pin 114 is also soldered to the second line a22.
  • there are two pins 114 and the two pins 114 are respectively welded to the second lines a22 on both sides of the two power chips 112 .
  • the pins 114 are perpendicular to the mounting surface 1110 .
  • the pins 114 may also be fixed to the corresponding second lines a22 by solder paste welding, ultrasonic welding, silver sintering and other connection methods.
  • the shape of the pins 114 may be cylindrical, elliptical, rectangular, polygonal or the like, and the shapes of the two pins 114 may be the same or different.
  • the material of the pin 114 may be Cu, Ag, Al and other metals or alloys with excellent electrical conductivity. Of course, the number and arrangement of the pins 114 can also be set according to actual needs.
  • the pins 114 may also not be perpendicular to the mounting surface 1110 .
  • the power chip 112 and the pins 114 are simultaneously mounted on the mounting surface 1110 , which is beneficial to reduce the manufacturing steps of the power module, reduce the production cost, and improve the production efficiency of the power module.
  • the power chip 112 may also be mounted on the mounting surface 1110 prior to the pins 114 , or the pins 114 may also be mounted on the mounting surface 1110 prior to the power chip 112 .
  • a conductive member 15 electrically connected to the power chip 112 is formed on the surface of the power chip 112 facing away from the mounting surface 1110 .
  • the step of forming the conductive member 15 has various implementations, as follows:
  • the two power chips 112 are electrically connected and the power chip 112 is electrically connected. and its corresponding pin 114.
  • the two power chips 112 are connected by wires, and the power chips 112 and their corresponding pins 114 are indirectly electrically connected.
  • the wires are connected between the second line a22 and the power chip 112, so that the power chip 112 corresponds to the power chip 112.
  • the pins 114 are indirectly electrically connected.
  • the lead connection process is mature and simple, and the cost is low.
  • the two power chips 112 and the power chips 112 and their corresponding pins 114 may also be connected through a connection structure such as a lead frame. Then, one end of the copper pillar 15 is fixedly connected to the surface of the power chip 112 facing away from the mounting surface 1110 and is electrically connected to the power chip 112 .
  • the number of copper pillars 15 is adapted to the number of power chips 112 , and one copper pillar 15 corresponds to one power chip 112 .
  • the conductive member 15 may also be connected by other conductive structures such as leads.
  • the lead frame 15 when the conductive member is a lead frame 15, the lead frame 15 is provided, and the lead frame 15 includes a first end 151, a second end 152 and a third end 153 that are connected to each other.
  • the first end 151 is electrically connected to the second terminal 152 and the third terminal 153, respectively.
  • Corresponding pins 114 are connected, and the second ends 152 are used for connection with related components in subsequent processes.
  • the electrical connection between the two power chips 112 can also be realized through the lead frame 15 .
  • the conductive member is the lead frame 15
  • the electrical connection between the pin 114 and the power chip 112 and between the two power chips 112 is realized at the same time, so there is no need to introduce additional leads to connect the power chip 112 and the pin 114 and
  • the structure of the power module is simpler, the manufacturing steps of the power module are also reduced, and the production efficiency of the power module is improved.
  • the parameter is smaller, and the heat dissipation effect of the power chip 112 can also be increased.
  • S120 Provide the driver board 12, set the driver board 12 on the side of the power chip 112 away from the mounting surface 1110, and electrically connect the driver board 12 and the power chip 112 to form the to-be-packaged structure 13a.
  • the driving board 12 is provided first.
  • the driving board 12 includes a central area 121 and an edge area 122 surrounding the central area 121.
  • the central area 121 is provided with electronic components such as a driving chip 123, a resistor 124, a capacitor and an optocoupler to form a driving circuit.
  • the driving board 12 further includes a through hole 125 and a through hole 126 , the through hole 125 is located in the central area 121 , and the through hole 126 is located in the edge area 122 .
  • small electronic components such as resistors 124 , capacitors and optocouplers may also be partially disposed in the edge region 122 .
  • the driving board 12 may also include only the central region 121 , that is, the driving board 12 may not include the edge region 122 .
  • the driver board 12 is disposed on the side of the power chip 112 facing away from the mounting surface 1110 , and the driver board 12 and the power chip 112 are electrically connected to form the to-be-packaged structure 13 a .
  • the driving board 12 is disposed between two ends of the pins 114 and is electrically connected to one end of the power chip 112 near the pins 114 .
  • this step has various implementations.
  • One implementation is that in the scenario where the surface of the power chip 112 facing away from the mounting surface 1110 is provided with the copper pillar 15 or the lead frame 15 , as shown in FIG. 14 and FIG. 15 , first drive the driver
  • the board 12 is disposed at one end of the copper pillar 15 facing away from the power chip 112 or at the second end 152 of the lead frame 15 , the central area 121 is disposed opposite to the first power board 11c , the pins 114 penetrate through the through holes 125 of the driving board 12 and Insulated connection with the drive board 12 .
  • one end of the copper pillar 15 facing away from the power chip 112 or the second end 152 of the lead frame 15 and the driving board 12 are welded, so that the driving chip 123 of the driving board 12 is electrically connected to the power chip 112 through the conductive member 15 to form a package to be packaged Structure 13a.
  • the length of the copper pillar 15 is equal to the distance between the driving board 12 and the power chip 112 . It can be understood that the length direction of the copper pillar 15 is the flow direction of the current in the copper pillar 15 , so that the copper pillar The length of 15 is the shortest, that is, the connection line between the drive board 12 and the power chip 112 is the shortest, which effectively reduces the parasitic parameters of the connection line of the power module and improves the electrical performance of the power module.
  • the surface of the power chip 112 facing away from the mounting surface 1110 is not provided with the copper pillars 15 or the lead frame 15, as shown in FIG.
  • the central area 121 is disposed opposite to the first power board 11 c , and the pins 114 penetrate through the through holes 125 of the driving board 12 .
  • the hole wall of the through hole 125 and the pins 114 are electrically connected, so that the driving chip 123 of the driving board 12 is electrically connected to the power chip 112 through the pins 114 to form the to-be-packaged structure 13a.
  • the driving board 12 only includes the central area 121 , and the surface of the power chip 112 facing away from the mounting surface 1110 is provided with copper pillars or lead frames, and the pins 114 are not perpendicular to the mounting surface 1110 .
  • the lead frame 15 is provided on the surface of the power chip 112 facing away from the mounting surface 1110 as an example for illustration.
  • the driving board 12 is disposed on the second end 152 of the lead frame 15 , and the central area 121 is disposed opposite to the first power board 11 c and located between the two pins 114 .
  • a second power board 11d is provided.
  • the structures of the second power board 11d and the first power board 11c are basically the same.
  • a power board 11c is electrically connected to form the to-be-packaged structure 13a.
  • the mounting surface 1110 of the second power board 11d is disposed opposite to the mounting surface 1110 of the first power board 11c , that is, the first power board 11c and the second power board 11d are symmetrically arranged on both sides of the driving board 12 .
  • the arrangement of the first power board and the second power board of the pin 114 driving board 12 is not limited to the above description.
  • the power chip 112 may also be connected to the circuit board through other structures than the pins 114 .
  • S130 Encapsulate the structure to be encapsulated 13a by the encapsulation body 113 to form a power module.
  • the structure to be packaged 13a is packaged by a plastic packaging process.
  • the structure to be packaged 13a can be the structure to be packaged 13a shown in FIG. 14, FIG. 15, FIG. 16 and FIG. 17.
  • the following The description is given by taking as an example that the structure to be packaged 13a is the structure to be packaged 13a shown in FIG. 14 .
  • the structure to be packaged 13a is put into the package mold, the end of the pin 114 away from the power chip 112 extends out of the package mold, and the package mold is provided with an avoidance structure, and the avoidance structure is located in the edge area 122 of the drive board 12 It faces away from the surface of the power chip 112 and extends toward the plane where the back surface 1111 of the substrate 111 is located through the through holes of the edge region 122 .
  • a package body 113 is filled into the packaging mold.
  • the material of the package body 113 can be, for example, a plastic material such as epoxy resin.
  • the encapsulation mold is removed.
  • the power module 10 formed by the plastic encapsulation process in this embodiment has good sealing performance, which can improve the moisture resistance and reliability of the power module 10 .
  • the package body 113 is packaged on the back side 1111 of the substrate 111 to the side of the driving board 12 facing away from the power chip 112 , and the end of the pins 114 away from the power chip 112 is exposed to the package body 113 so as to facilitate electrical connection with external related devices. connect.
  • the backside 1111 of the substrate 111 exposes the package body 113 . Since the backside 1111 of the metal layer a3 exposes the package body 113 , the metal layer a3 can effectively transfer the heat of the power chip 112 to the outside, thereby improving the heat dissipation efficiency of the power chip 112 .
  • the formed package structure 13 includes a through hole 126 formed by avoiding the package body 113 through the avoidance structure and a mounting hole 131 of the package body 113 , and related components are connected to the package structure 13 through the mounting hole 131 .
  • the surface of the edge region 122 facing away from the power chip 112 exposes the package body 113 , so that the power chip 112 can be matched with related structures.
  • the distance between the driving board 12 and the power chip 112 is smaller than the distance between the driving board 12 and the surface of the package body 113 facing away from the mounting surface 1110 .
  • the distance between the driving board 12 and the power chip 112 is limited to be smaller than the distance between the driving board 12 and the surface of the package body 133 facing away from the mounting surface 1110 to ensure that the distance between the driving board 12 and the power chip 112 is sufficiently short. Therefore, it is ensured that the parasitic parameters of the connection line between the driving board 12 and the power chip 112 are sufficiently small, and the electrical performance of the power module 10 is effectively improved.
  • the heat sink 14 is fixed to the package structure 13 , and the heat sink 14 is in contact with the back surface 1111 of the substrate 111 to improve the heat dissipation efficiency of the power chip 112 .
  • the specific steps of fixing the heat sink 14 to the package structure 13 are as follows: the screws 132 are screwed to the heat sink 14 through the mounting holes 131 from the surface of the edge region 122 facing away from the power chip 112 .
  • the surface of the edge region 122 facing away from the power chip 112 is not provided with the package body 113 , so that the screws 132 can be fixed from the surface of the edge region 122 facing away from the power chip 112 .
  • the package body 113 is a brittle material, and it is easy to break if subjected to a large stress. Since the edge region 122 is not provided with a package body, the screws 132 directly transmit the locking force to the driving board 12, reducing the stress on the package body 113. , to avoid the risk of cracking of the package body 113 caused by the screw 132 directly transmitting the locking force to the package body 113 .
  • the heat sink 14 may also be fixed to the package structure 13 by screwing or other fixing methods. Alternatively, the encapsulation structure 13 may also be connected and fixed with the heat sink 14 by other connection methods such as bonding, snap connection, and the like.
  • the structure to be packaged 13 a ( FIG. 17 ) is composed of the first power board 11 c , the driving board 12 and the second power board 11 d
  • the first power The backsides 1111 of the substrates 111 of the board 11c and the second power board 11d are exposed to the package body 113, so that the substrates 111 of the first power board 11c and the second power board 11d are connected to their corresponding heat sinks, so as to realize the power module 10 for good cooling.
  • the specific method for encapsulating the structure to be packaged 13a by the package body 113 may also be as follows: first, a package housing 16 is provided, the structure to be packaged 13a is fixed in the package housing 16, and the pins 114 An end away from the mounting surface 1110 is exposed to the package housing 16 .
  • the to-be-packaged structure 13a may be composed of a first power board 11c and a driving board 12 (as shown in FIG. 21 ), or may be composed of a first power board 11c, a driving board 12 and a second power board.
  • glue is poured into the package shell 16 to fill the gap in the package shell 16 to form the package body 113.
  • the package body 113, the structure to be packaged 13a and the package shell 16 together form the package structure 13 to form a power module 10.
  • the package body 113 is formed by pouring silicon gel into the package casing 16 .
  • the encapsulation body 113 is formed by a shell encapsulation process, which is simple and effectively improves the production efficiency of the power module 10 .
  • the driving board 12 in the structure to be packaged 13 a includes only the central area 121 .
  • the heat sink 14 is disposed on the package casing 16 to dissipate heat from the power module 10 .
  • the driver board 12 is disposed on the side of the power chip 112 facing away from the mounting surface 1110 , and the driver board 12 and the power chip 112 are electrically connected to form the to-be-packaged structure 13 a , and then the to-be-packaged structure is packaged 13a to form the package structure 13 .
  • encapsulating the driving board 12 and the power chip 112 together can shorten the distance between the driving board 12 and the power chip 112 , thereby shortening the connection line between the power chip 112 and the driving board 12 , effectively reducing the power chip
  • the parasitic parameters of the connection line between 112 and the driving board 12 are to reduce the parasitic parameters of the power module 10 and improve the electrical performance of the power module 10 .
  • encapsulating the driving board 12 and the first power board 11c together can effectively reduce the plane area of the power module 10 compared to arranging the driving board 12 and the first power board 11c coplanar.
  • the thickness of the first power board 11c after packaging is usually more than 5 mm, which is enough to allow the driving board 12 and the first power board 11c to be packaged together without
  • the thickness of the first power board 11c is increased, that is to say, encapsulating the driving board 12 and the first power board 11c together will not affect the thickness after packaging, which effectively improves the integration of the power module 10 and reduces the packaging size.
  • the volume of the body 113 is reduced, and the cost of the power module 10 is reduced.

Abstract

一种功率模组（10）及其制造方法，所述功率模组（10）包括功率组件（11）和驱动板（12），所述功率组件（11）包括基板（111）、功率芯片（112）和封装体（113），所述功率芯片（112）设于所述基板（111）的安装面（1110），所述封装体（113）将所述功率芯片（112）封装于所述基板（111）上，所述驱动板（12）设于所述封装体（113）内并位于所述功率芯片（112）背向所述安装面（1110）的一侧，所述驱动板（12）和所述功率芯片（112）电连接。所述功率模组可以降低驱动板（12）和功率组件（11）之间的寄生参数，提高功率模组（10）的电性能。

Description

功率模组及其制造方法、转换器和电子设备 技术领域
本申请涉及芯片封装技术领域，尤其涉及一种功率模组及其制造方法、转换器和电子设备。
背景技术
功率模组即功率电力电子器件按一定的功能组合灌封成的模组，现有的功率模组与驱动板连接，通过驱动板控制封装在功率模组内的功率芯片的开关。但是，现有的驱动板和功率模组中的功率芯片之间的寄生参数太大，影响功率模组的电性能。
发明内容
本申请实施例保护一种功率模组，以降低驱动板和功率模组之间的寄生参数，提高功率模组的电性能。
本申请实施例还保护一种功率模组的制造方法以及包括该功率模组的转换器和包括该转换器的电子设备。
本申请一方面保护一种功率模组，所述功率模组包括功率组件和驱动板，所述功率组件包括基板、功率芯片和封装体，所述功率芯片设于所述基板的安装面，所述封装体将所述功率芯片封装于所述基板上，所述驱动板设于所述封装体内并位于所述功率芯片背向所述安装面的一侧，所述驱动板和所述功率芯片电连接。
本实施例中的功率模组通过将驱动板设于功率组件的封装体内，且使驱动板位于功率芯片背向安装面的一侧，以减小驱动板和功率芯片之间的距离，进而缩短功率芯片与驱动板之间的连接线路，有效减小功率芯片与驱动板之间的连接线路的寄生参数，即减小功率模组的寄生参数，提高功率模组的电性能。同时，将驱动板设于功率组件的封装体内，即将驱动板设于功率组件的内部，相比于将驱动板与功率组件共面设置，能有效减小功率模组的平面面积。由于功率组件在形成封装体时为了保证功率组件的强度，通常功率组件的厚度都会在5mm以上，这个厚度足以允许驱动板嵌入到功率组件的封装体中，而不增加功率组件的厚度，也就是说，将驱动板设于封装体中并不会对功率组件的厚度产生影响，有效提高了功率模组的集成度，减小封装体积，降低功率模组的成本。
可以理解的是，寄生参数主要分为两个，一个是寄生电感，一个是寄生电阻。对于寄生电感来说，其大小主要有两个方面影响，一是连接线路的长短，连接线路越长寄生电感越大，另外是连接线路所围绕的面积，连接线路所绕面积越大寄生电感越大。对于寄生电阻来说连接线路越长寄生电阻越大。因此，本申请中驱动板和功率芯片之间距离越短，驱动板与功率芯片之间的连接线路长度越短，同时也会减小其连接线路所围绕的面积，有效减小功率模组的寄生电感和寄生电阻，提高功率模组的电性能。
一些实施例中，在垂直于所述安装面的方向上，所述驱动板与所述功率芯片之间的距离小于所述驱动板与所述封装体背向所述安装面的表面之间的距离。本实施例通过限制所述驱动板与所述功率芯片之间的距离小于所述驱动板与所述封装体背向所述安装面的表面之间的距离，以保证驱动板距离功率芯片的距离足够短，从而保证驱动板和功率芯片之间 的连接线路的寄生参数足够小，有效提高功率模组的电性能。
一些实施例中，所述功率组件还包括插针，所述插针贯穿所述驱动板和部分所述封装体，且所述插针的一端设于所述安装面，并与所述功率芯片电连接，所述插针的另一端露出所述封装体。插针用于实现功率芯片和电路板之间的电连接。当然，其他实施例中，功率芯片插针还可以用于实现功率芯片和驱动板之间的电连接。或者，插针还可以不贯穿驱动板。或者，功率芯片还可以通过插针以外的其他结构实现与电路板之间的连接。
一些实施例中，所述驱动板通过所述插针电连接至所述功率芯片，也就是说，所述插针和所述驱动板电连接，以使所述驱动板和所述功率芯片电连接。插针能同时实现功率芯片与驱动板的驱动芯片之间的电连接，还能实现功率芯片与外部的电路板之间的电连接，简化了功率模组的结构。
一些实施例中，所述功率模组还包括导电件，所述导电件位于所述功率芯片和所述驱动板之间，所述功率芯片和所述驱动板通过导电件连接。由于驱动板设于功率组件的封装体内，减小了驱动板和功率芯片之间的距离，进而缩短了连接在驱动板和功率芯片之间的连接线路(导电件)的长度，有效减小功率模组的连接线路的寄生参数，提高了功率模组的电性能。
一些实施例中，所述导电件为铜柱，所述铜柱的两端分别电连接至所述功率芯片和所述驱动板。铜柱的长度与驱动板到功率芯片之间的距离相等，可以理解的是，铜柱的长度方向为电流在铜柱中的流动方向，从而使得铜柱的长度最短，有效减小功率模组的连接线路的寄生参数，提高了功率模组的电性能。
一些实施例中，所述导电件为引线框架，所述引线框架包括相互连接的第一端和第二端，所述第一端与所述功率芯片电连接，所述第二端与所述驱动板电连接。本实施方式中，引线框架具有很好的通流能力，能有效减小功率模组的寄生参数，同时能有效的增加功率芯片的散热能力。同时，两个功率芯片之间的电连接也可以通过引线框架电连接，有效减少功率模组的制作步骤，提高功率模组的成产效率。
一些实施例中，所述引线框架还包括与所述第一端电连接的第三端，所述第三端电连接所述插针。也就是说，引线框架还能同时实现插针和功率芯片之间的电连接，从而不需要再额外引入引线连接功率芯片和插针，功率模组的结构更加简单，同时也减少了功率模组的制作步骤，提高功率模组的成产效率，且引线框架相比于引线通流能力更强，寄生参数更小，还可以增加功率芯片的散热效果。
一些实施例中，所述封装体通过塑封工艺形成。通过塑封工艺形成的封装体密封性好，能提高封装结构的抗湿性和可靠性。
一些实施例中，所述功率模组还包括封装壳体，所述功率组件和所述驱动板收容于所述封装壳体内部，所述插针背向所述功率芯片的一端伸出所述封装壳体外部，所述封装体通过壳体封装工艺填充于所述封装壳体内的空隙中。本申请通过壳体封装工艺形成封装体，该工艺简单，有效提高了功率模组的生产效率。
一些实施例中，所述驱动板与所述功率组件构成封装结构，所述基板背向所述功率芯片的表面为背面，所述背面露出所述封装体，所述功率模组还包括散热器，所述散热器固接于所述封装结构并与所述背面接触。基板的背面直接与散热器接触，能快速地将功率芯 片的热量传递给散热器，再由散热器传递到外界，有效提高功率芯片的散热效率。
一些实施例中，所述驱动板包括中心区域和围绕所述中心区域的边缘区域，所述中心区域与所述功率组件相对设置，所述封装结构包括安装孔，所述安装孔位于所述边缘区域，并从所述驱动板朝向所述功率芯片的方向贯穿所述驱动板和所述封装体，所述散热器通过所述安装孔与所述封装结构连接。边缘区域及位于边缘区域的封装体可以理解为封装结构的安装部，以便于封装结构通过安装部与其他部件固定连接。
一些实施例中，所述边缘区域背向所述功率芯片的表面露出所述封装体，以便于螺钉从所述边缘区域背向所述功率芯片的表面固定。封装体属于脆性材料，如果承受较大的应力很容易断裂，由于边缘区域未设有封装体，螺钉直接将锁持力传递给驱动板，减小封装体承受的应力，避免螺钉将锁持力直接传递给封装体而导致封装体开裂的风险。
一些实施例中，所述功率组件为两个，两个所述功率组件的所述安装面相对设置且电连接，两个功率组件的封装体连接，所述驱动板设于两个所述功率组件之间并与至少一个功率组件电连接。本实施例通过将驱动板嵌设于两个功率组件之间，以缩短驱动板与两个功率组件的功率芯片之间的距离，从而缩短驱动板与两个功率组件的功率芯片之间的连接线路，有效减小连接线路的寄生参数，提高功率模组的电性能。
本申请第二方面保护一种转换器，所述转换器包括电路板和上述任一实施例所述的功率模组，所述功率模组与所述电路板电连接。具有本申请提供的功率模组的转换器的集成度和电性能有效提高。
本申请第三方面保护一种电子设备，所述电子设备包括上述的转换器，所述转换器用于实现电子设备的电信号的转换。具有本申请提供的转换器的电子设备的集成度和电性能有效提高。
本申请第四方面保护一种功率模组的制造方法，其特征在于，所述制造方法包括：
提供第一功率板，其中，所述第一功率板包括基板和设于所述基板的安装面的功率芯片；
提供驱动板，将所述驱动板设于所述功率芯片背向所述安装面的一侧，电连接所述驱动板和所述功率芯片，以形成待封装结构；
通过封装体封装所述待封装结构，以形成功率模组。
本申请的功率模组的制造方法通过将驱动板设于所述功率芯片背向所述安装面的一侧，电连接所述驱动板和功率芯片，形成待封装结构，然后封装待封装结构以形成封装结构。也就是说，将驱动板和功率芯片封装在一起，能够缩短驱动板和功率芯片之间的距离，进而缩短功率芯片与驱动板之间的连接线路，有效减小功率芯片与驱动板之间的连接线路的寄生参数，即减小功率模组的寄生参数，提高功率模组的电性能。同时，将驱动板和第一功率板封装在一起，相比于将驱动板与第一功率板共面设置，能有效减小功率模组的平面面积。由于第一功率板封装时为了保证其封装后的强度，通常第一功率板封装后的厚度都会在5mm以上，这个厚度足以允许驱动板和第一功率板封装在一起，而不增加第一功率板的厚度，也就是说，将驱动板和第一功率板封装在一起不会对封装后的厚度产生影响，有效提高了功率模组的集成度，减小封装体积，降低功率模组的成本。
一些实施例中，所述制造方法还包括，在将所述驱动板设于所述功率芯片背向所述安 装面的一侧之前，在所述功率芯片背向所述安装面的表面形成与所述功率芯片电连接的导电件，所述驱动板设于所述功率芯片背向所述安装面的一侧时所述驱动板与所述导电件电连接。导电件用于连接功率芯片和后续工艺中的驱动板，减少功率模组的寄生参数，提高功率模组的电性能。
一些实施例中，所述导电件为铜柱，或者所述导电件为引线框架。铜柱的长度与驱动板到功率芯片之间的距离相等，可以理解的是，铜柱的长度方向为电流在铜柱中的流动方向，从而使得铜柱的长度最短，即驱动板与功率芯片之间的连接线路最短，有效减小功率模组的连接线路的寄生参数，提高了功率模组的电性能。当导电件为引线框架时，还是同时实现插针和功率芯片之间，及两个功率芯片之间的电连接，从而不需要再额外引入引线连接功率芯片和插针及连接两个功率芯片，功率模组的结构更加简单，同时也减少了功率模组的制作步骤，提高功率模组的成产效率，且引线框架相比于引线通流能力更强，寄生参数更小，还可以增加功率芯片的散热效果。
一些实施例中，所述制造方法还包括在将所述功率芯片设于所述基板的所述安装面的同时，将插针固定于所述安装面，所述驱动板设于所述功率芯片背向所述安装面的一侧时，所述插针贯穿所述驱动板。有利于减少功率模组的制作步骤，降低生产成本，提高功率模组的生产效率。
一些实施例中，所述制造方法还包括，电连接所述驱动板和所述第一功率板之后，再提供第二功率板，将所述第二功率板设于所述驱动板背向所述第一功率板的一侧，并与所述第一功率板电连接，以形成待封装结构。本实施例通过将驱动板嵌设于两个功率板之间，以缩短驱动板与两个功率板的功率芯片之间的距离，从而缩短驱动板与两个功率板的功率芯片之间的连接线路，有效减小连接线路的寄生参数，提高功率模组的电性能。
一些实施例中，通过塑封工艺封装所述待封装结构。本实施例通过塑封工艺形成的功率模组密封性好，能提高功率模组的抗湿性和可靠性。
一些实施例中，封装所述待封装结构的具体方法为：提供封装壳体，将所述待封装结构固定在所述封装壳体中；向所述封装壳体内灌胶，以填充所述封装壳体内的空隙。本实施例通过壳体封装工艺形成封装体，该工艺简单，有效提高了功率模组的生产效率。
一些实施例中，所述封装体与所述待封装结构构成封装结构，所述基板背向所述功率芯片的表面为背面，所述制造方法还包括提供散热器，将所述散热器与所述封装结构固接，并与所述背面接触，以提高功率芯片的散热效率。
一些实施例中，所述驱动板包括中心区域和围绕所述中心区域的边缘区域，所述中心区域与所述功率组件相对设置，所述边缘区域包括通孔，所述制造方法还包括封装所述待封装结构时，形成贯穿所述通孔和封装体的安装孔，所述散热器与所述封装结构固接的具体步骤为螺钉穿过所述安装孔与所述散热器螺接。当然，在其他实施例中，还可以将散热器通过螺接或其他固定方式固接于封装结构。或者，封装结构还可以与散热器通过粘接、卡接等其他连接方式连接固定。
本实施例中的功率模组通过将驱动板设于功率组件的封装体内，且使驱动板位于功率芯片背向安装面的一侧，以减小驱动板和功率芯片之间的距离，进而缩短功率芯片与驱动板之间的连接线路，有效减小功率芯片与驱动板之间的连接线路的寄生参数，即减小功率 模组的寄生参数，提高功率模组的电性能。
附图说明
图1是本申请实施例提供的一种电子设备的结构示意图；
图2是图1所示的电子设备的转换器的部分结构示意图；
图3是图2所示的转换器的功率模组的第一实施例的结构示意图；
图4是图3所示的功率模组的另一实施方式的结构示意图；
图5是图2所示的功率模组的第二实施例的结构示意图；
图6是图2所示的功率模组的第三实施例的结构示意图；
图7是图2所示的功率模组的第四实施例的结构示意图；
图8是图3所示的功率模组的制造方法的流程示意图；
图9-图21为图8所示的制造方法的具体流程示意图。
具体实施方式
下面将结合本申请实施例中的附图对本申请实施例进行描述。
请参阅图1，图1是本申请实施例提供的一种电子设备100的结构示意图。
电子设备100包括转换器1和壳体2，转换器1收容于壳体2内部，转换器1用于实现电子设备100的电信号的转换。本实施例中的电子设备100包括且不限于风力发电机、光伏发电机、电动车、白色家电等具有转换器1的电子设备100。具有本申请提供的转换器1的电子设备100的集成度和电性能有效提高。
请参阅图2，图2是图1所示的电子设备100的转换器1的部分结构示意图。
转换器1包括功率模组10和电路板20，功率模组10安装于电路板20上，电路板20与功率模组10电连接以实现对功率模组10的控制。本实施例中的转换器1包括且不限于直流-交流转换器、直流-直流转换器等具有功率模组10的转换器。具有本申请提供的功率模组10的转换器1的集成度和电性能有效提高。
请参阅图3，图3是图2所示的转换器1的功率模组10的第一实施例的结构示意图。
功率模组10包括功率组件11和驱动板12，功率组件11包括基板111、功率芯片112和封装体113，功率芯片112设于基板111的安装面1110，封装体113将功率芯片112封装于基板111上，驱动板12设于封装体113内并位于功率芯片112背向安装面1110的一侧，以与功率组件11形成封装结构13，驱动板12和功率芯片112电连接，以驱动功率芯片112运行。可以理解的是，封装体113将驱动板12和功率芯片112封装于基板111上，以形成封装结构13。
本实施例中的功率模组10通过将驱动板12设于功率组件11的封装体113内，且使驱动板12位于功率芯片112背向安装面1110的一侧，以减小驱动板12和功率芯片112之间的距离，进而缩短功率芯片112与驱动板12之间的连接线路，有效减小功率芯片112与驱动板12之间的连接线路的寄生参数，即减小功率模组10的寄生参数，提高功率模组10的电性能。同时，将驱动板12设于功率组件11的封装体113内，即将驱动板12设于功率组件11的内部，相比于将驱动板12与功率组件11共面设置，能有效减小功率模组10的平 面面积。由于功率组件11在形成封装体113时为了保证功率组件11的强度，通常功率组件11的厚度都会在5mm以上，这个厚度足以允许驱动板12嵌入到功率组件11的封装体113中，而不增加功率组件11的厚度，也就是说，将驱动板12设于封装体113中并不会对功率组件11的厚度产生影响，有效提高了功率模组10的集成度，减小封装体113积，降低功率模组10的成本。
可以理解的是，寄生参数主要分为两个，一个是寄生电感，一个是寄生电阻。对于寄生电感来说，其大小主要有两个方面影响，一是连接线路的长短，连接线路越长寄生电感越大，另外是连接线路所围绕的面积，连接线路所绕面积越大寄生电感越大。对于寄生电阻来说连接线路越长寄生电阻越大。因此，本申请中驱动板12和功率芯片112之间距离越短，驱动板12与功率芯片112之间的连接线路长度越短，同时也会减小其连接线路所围绕的面积，有效减小功率模组10的寄生电感和寄生电阻，提高功率模组10的电性能。
基板111包括承载板a1、线路层a2和金属层a3，线路层a2和金属层a3分别形成于承载板a1相对两个表面，线路层a2和金属层a3分别位于承载板a1的两侧，以保证承载板a1的平整度，防止承载板a1发生翘曲。线路层a2背向承载板a1的表面为安装面1110，即功率芯片112设于线路层a2背向承载板a1的表面，基板111背向功率芯片112的表面为背面1111，即，金属层a3背向承载板a1的表面为背面1111，背面1111露出封装体113。线路层a2可以用于实现功率芯片112与其他器件的电连接，也可以用于实现功率芯片112之间的电连接。由于金属层a3的背面1111露出封装体113，以便于金属层a3有效将功率芯片112的热量传递至外界，提高功率芯片112的散热效率。且金属层a3还能有效增强基板111的强度。
本实施例中，承载板a1的材料可以为陶瓷等绝缘散热材料，陶瓷例如可以是氧化铝、氮化硅或氮化铝等陶瓷材料。陶瓷材料具有良好的散热效果，能快速为功率芯片112散热。线路层a2和金属层a3的材料为金属材料，例如可以是铜、镍、铝等材料，能快速为功率芯片112散热。线路层a2和金属层a3的材料可以相同，也可以不相同。同时线路层a2还用于实现功率芯片112与其他线路的电连接。当然，在其他实施例中，承载板a1的材料还可以其他绝缘材料。
本实施例中，线路层a2包括第一线路a21和第二线路a22，第二线路a22位于第一线路a21的两侧，第一线路a21和第二线路a22背向承载板a1的表面共同构成安装面1110。功率芯片112设于第一线路a21上，功率芯片112通过引线与第二线路a22连接，当然，功率芯片112还可以通过其他导电结构与第二线路a22连接，第二线路a22与其他元件连接，也就是说，第二线路a22用于实现功率芯片112与其他元件之间的连接。当然，在其他实施例中，线路层a2的结构不局限上述描述，线路层a2的具体结构可根据功率芯片112的连接需要设置。
本实施例中，功率芯片112的数量可以为一个或多个，图3以功率芯片112为两个进行示例。两个功率芯片112间隔设于第一线路a21上，且两个功率芯片112通过引线电连接，引线连接工艺成熟简单，成本低。功率芯片112可以是绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，IGBT)、金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor，MOSFET)和/或二极管。功率芯片112可以通过焊接、粘接等连接方 式固定在第一线路a21上。例如当功率芯片112需要和第一线路a21电连接时，功率芯片112可以通过焊接固定于第一线路a21，当功率芯片112不需要和第一线路a21电连接时，功率芯片112可以通过粘接等其他方式固定于第一线路a21。当然，在其他实施例中，两个功率芯片112还可通过引线框架等连接结构连接。
本实施例中的封装体113通过塑封工艺形成。形成封装体113的材料例如可以是环氧树脂、硅胶等塑胶材料。通过塑封工艺形成的封装体113密封性好，能提高封装结构13的抗湿性和可靠性。具体的，封装体113封装于基板111的背面1111至驱动板12背向功率芯片112的一侧，驱动板12背向功率芯片112的一侧的边缘未设有封装体113，以便于功率芯片112与相关结构配合。在其他实施例中，封装体113也可以通过壳体封装工艺等其他工艺形成。
功率组件11还包括插针114，插针114贯穿驱动板12和部分封装体113，且插针114的一端设于安装面1110，并与功率芯片112电连接，插针114的另一端露出封装体113。具体的，插针114设于与其对应的第二线路a22，从而通过第二线路a22与其对应的功率芯片112电连接，插针114用于实现功率芯片112和电路板20(图2)之间的电连接。当然，其他实施例中，功率芯片112插针114还可以用于实现功率芯片112和驱动板12之间的电连接。或者，插针114还可以不贯穿驱动板12。或者，功率芯片112还可以通过插针114以外的其他结构实现与电路板20之间的连接。
在垂直于安装面1110的方向上，驱动板12与功率芯片112之间的距离小于驱动板12与封装体113背向安装面1110的表面之间的距离。本实施例通过限制驱动板12与功率芯片112之间的距离小于驱动板12与封装体133背向安装面1110的表面之间的距离，以保证驱动板12距离功率芯片112的距离足够短，从而保证驱动板12和功率芯片112之间的连接线路的寄生参数足够小，有效提高功率模组10的电性能。
本实施例中，插针114为两个，两个插针114分别设于两个功率芯片112的两侧的第二线路a22，换言之，两个功率芯片112设于两个插针114之间。插针114可以通过锡膏焊接固接于其对应的第二线路a22，也可以通过超声焊接、银烧结等连接方式固接于其对应的第二线路a22。插针114的形状可以是圆柱形、椭圆柱，长方体形、多边体形等形状，两个插针114的形状可以相同，也可以不相同。插针114的材质可以为具有优异导电性能的Cu，Ag，Al等金属或合金。当然，其他实施例中，功率芯片112和插针114的排布方式及插针114的数量还可以根据实际需要设置。
驱动板12包括中心区域121和围绕中心区域121的边缘区域122，中心区域121与功率组件11相对设置，中心区域121设有驱动芯片123、电阻124、电容和光耦等电子元件，以形成驱动电路，功率组件11的功率芯片112与驱动芯片123电连接。封装结构13包括安装孔131，安装孔131位于边缘区域122，并从驱动板12朝向功率芯片112的方向贯穿驱动板12和封装体113，相关部件通过安装孔与封装结构13连接。边缘区域122及位于边缘区域122的封装体113可以理解为封装结构13的安装部，以便于封装结构13通过安装部与其他部件固定连接。
当然，在其他实施例的一种实施场景中，还可以将相关部件通过螺接或其他固定方式固接于封装结构13。在其他实施例的另一种实施场景中，封装结构13还可以与相关部件 通过粘接、卡接等其他连接方式连接固定。在其他实施例的又一种实施场景中，电阻124、电容和光耦等小型的电子元件也可以部分设于边缘区域122。在其他实施例的再一种实施场景中，当不需要通过驱动板12与相关部件固定时，驱动板12还可以仅包括中心区域121，也就是说，驱动板12可以不包括边缘区域122。
本实施例中，边缘区域122背向功率芯片112的表面露出封装体113，也就是说，边缘区域122背向功率芯片112的表面未设有封装体113，以便于螺钉132从边缘区域122背向功率芯片112的表面固定。同时，封装体113属于脆性材料，如果承受较大的应力很容易断裂，由于边缘区域122未设有封装体113，螺钉132直接将锁持力传递给驱动板12，减小封装体113承受的应力，避免螺钉132将锁持力直接传递给封装体113而导致封装体113开裂的风险。
驱动板12还包括贯通孔125，贯通孔125用于允许与其对应的插针114通过，以便于插针114贯穿驱动板12与外部相关元件相连。本实施例中，插针114贯穿贯通孔125并与贯通孔125之间为非电连接。当然，其他实施例中，插针114还可以通过贯通孔125与驱动板12电连接，以实现驱动板12和功率芯片112之间的电连接。
功率模组10还包括散热器14，散热器14固接于封装结构13并与背面1111接触。具体的，螺钉132通过安装孔131与散热器14螺接，以将散热器14固定于封装结构13。基板111的背面1111直接与散热器14接触，能快速地将功率芯片112的热量传递给散热器14，再由散热器14传递到外界，有效提高功率芯片112的散热效率。
功率模组10还包括导电件15，导电件15位于功率芯片112和驱动板12之间，功率芯片112和驱动板12通过导电件15连接。具体的，驱动板12上的驱动芯片123和功率组件11的功率芯片112之间通过导电件15连接。由于驱动板12设于功率组件11的封装体113内，减小了驱动板12和功率芯片112之间的距离，进而缩短了连接在驱动板12和功率芯片112之间的连接线路(导电件15)的长度，有效减小功率模组10的连接线路的寄生参数，提高了功率模组10的电性能。
本实施例中的导电件15具有多种实施方式，具体如下所示。
一种实施方式中，如图3所示，导电件为铜柱15，铜柱15的两端分别电连接至功率芯片112和驱动板12。具体的，铜柱15的两端电连接至功率芯片112和驱动板12上的驱动芯片123。铜柱15的数量与功率芯片112的数量适应，一个铜柱15对应一个功率芯片112。铜柱15的长度与驱动板12到功率芯片112之间的距离相等，可以理解的是，铜柱15的长度方向为电流在铜柱15中的流动方向，从而使得铜柱15的长度最短，有效减小功率模组10的连接线路的寄生参数，提高了功率模组10的电性能。当然，在其他实施例中，功率芯片112和驱动板12之间还可以通过引线等其他导电结构连接。
请参阅图4，图4是图3所示的功率模组10的另一实施方式的结构示意图。
另一种实施方式中，导电件为引线框架15(Lead Frame，LF)，引线框架15包括相互连接的第一端151和第二端152，第一端151与功率芯片112电连接，第二端152与驱动板12电连接。具体的，第二端152与驱动板12上的驱动芯片123电连接。引线框架15的数量和功率芯片112的数量相适应。本实施方式中，引线框架15具有很好的通流能力，能有效减小功率模组10的寄生参数，同时能有效的增加功率芯片112的散热能力。同时，两个 功率芯片112之间的电连接也可以通过引线框架电连接，有效减少功率模组10的制作步骤，提高功率模组10的成产效率。
引线框架15还包括与第一端151电连接的第三端153，第三端153电连接插针114。具体的，第三端153电连接至第二线路a22，从而与插针114电连接。也就是说，本实施方式的引线框架15还能同时实现插针114和功率芯片112之间的电连接，从而不需要再额外引入引线连接功率芯片112和插针114，功率模组10的结构更加简单，同时也减少了功率模组10的制作步骤，提高功率模组10的成产效率，且引线框架15相比于引线通流能力更强，寄生参数更小，还可以增加功率芯片112的散热效果。
请参阅图5，图5是图2所示的功率模组10的第二实施例的结构示意图。
本实施例和第一实施例中的功率模组10的结构大致相同，不同在于，本实施例中的功率芯片112和驱动板12通过插针114电连接，插针114和驱动板12电连接，以使驱动板12和功率芯片112电连接。具体的，插针114通过贯通孔125贯穿驱动板12时与贯通孔125的孔壁电连接，贯通孔125的孔壁与驱动板12的驱动芯片123电连接。插针114远离安装面1110的一端还与电路板20(图2)连接，也就是说，插针114能同时实现功率芯片112与驱动板12的驱动芯片123之间的电连接，还能实现功率芯片112与外部的电路板20之间的电连接，简化了功率模组10的结构。当然，其他实施例中，插针114还可以仅用于实现功率芯片112和驱动板12的驱动芯片123之间的电连接。
请参阅图6，图6是图2所示的功率模组10的第三实施例的结构示意图。
本实施例和第一实施例中的功率模组10的结构大致相同，不同在于，本实施例中的功率模组10还包括封装壳体16，功率组件11和驱动板12收容于封装壳体16内部，插针114背向功率芯片112的一端伸出封装壳体16外部，封装体113通过壳体封装工艺填充于封装壳体16内的空隙中。具体的，通过向封装壳体16中灌硅凝胶或环氧树脂等封装材料以形成封装体113。本申请通过壳体封装工艺形成封装体113，该工艺简单，有效提高了功率模组10的生产效率。
封装壳体16包括底板161和上盖162，上盖162盖于底板161上，与底板161形成收容功率组件11和驱动板12的空间。具体的，基板111的金属层a3通过焊接固接于底板161上，插针114背向功率芯片112的一端伸出上盖162外部。本实施例中，金属层a3通过焊接固接于底板161上，在保证基板111与底板161连接强度的基础上，有利于从功率芯片112传递到基板111的热量快速传递给底板161，通过底板161传递到外界，有效提高功率模组10的散热效率。当然，基板111的金属层a3还可以通过粘接、卡接等其他连接方式固接于底板161上。
本实施例中的两个功率芯片112之间及功率芯片112与插针114之间均通过引线连接，功率芯片112和驱动板12之间通过铜柱15连接。当然，功率芯片112和驱动板12之间还可以通过引线连接。且两个功率芯片112之间，功率芯片112和插针114之间及功率芯片112和驱动板12之间均可以通过引线框架15连接。
本实施例中的驱动板12仅包括中心区域121，中心区域121设有驱动芯片123、电阻124、电容和光耦等电子元件，以形成驱动电路，功率组件11的功率芯片112与驱动芯片123电连接。
散热器14固定连接于底板161，并与底板161背向基板111的表面接触，以便于底板161将功率芯片112的热量通过散热器14快速传递到外界，提高了功率芯片112的散热效率，进而提高了功率模组10的电性能。具体的，散热器14可以通过螺接、卡接、粘接等连接方式中的一种固定于底板161上。当然，在其他实施例中，本实施例的功率模组也可以不设置散热器。
请参阅图7，图7是图2所示的功率模组10的第四实施例的结构示意图。
本实施例和第一实施例中的功率模组10的结构大致相同，不同在于，本实施例中的功率组件11为两个，两个功率组件11的安装面1110相对设置且电连接，两个功率组件11的封装体113连接，驱动板12设于两个功率组件11之间并与至少一个功率组件11电连接。可以理解的是，驱动板12可以嵌设于任意一个功率组件11的封装体113内，驱动板12还可以嵌设于两个功率组件11的封装体113之间，即，驱动板12一部分嵌设于一个功率组件11的封装体113内，另一部分嵌设于另一个功率组件11的封装体113内。
本实施例通过将驱动板12嵌设于两个功率组件11之间，以缩短驱动板12与两个功率组件11的功率芯片112之间的距离，从而缩短驱动板12与两个功率组件11的功率芯片112之间的连接线路，有效减小连接线路的寄生参数，提高功率模组10的电性能。且两个功率组件11的金属层a3背向驱动板12的表面均露出封装体113，以便于为其对应的功率芯片112散热，提高功率芯片112的散热效率，有效提高功率模组10的电性能。
本实施例中，如图7所示，为了便于区分，两个功率组件11分别为功率组件11a和功率组件11b，功率组件11a与驱动板12电连接，具体的，功率组件11a的功率芯片112与驱动板12上的驱动芯片123通过引线框架15连接。当然，功率组件11a的功率芯片112与驱动板12上的驱动芯片123还可以通过引线或者金属柱等导电结构连接。在其他实施例中，驱动板12还可以与两个功率组件11的功率芯片112均电连接。且驱动板12与功率组件11a和功率组件11b之间的连接方式可以相同，也可以不同。
功率模组10包括导电柱17和插针114，导电柱17的两端分别连接与其对应的功率组件11a的安装面1110和功率组件11b的安装面1110之间，具体的，导电柱17的两端分别连接与其对应的功率组件11a的第二线路a22和功率组件11b的第二线路a22，并分别与功率组件11a的功率芯片112和功率组件11b的功率芯片112电连接。插针114一端固定于功率组件11a的第二线路a22的导电柱17上，插针114的另一端从功率组件11a和/或功率组件11b的封装体113的侧边伸出，以与外部相关器件连接，例如电路板。图7所示，导电柱17和插针114的数量均为两个，两个导电柱17分别位于两个功率芯片112的两侧，两个插针114分别从封装体113的两侧边伸出封装体113。本申请中的导电柱17用于实现功率组件11a和功率组件11b之间的电连接，插针114用于实现功率组件11a和功率组件11b与外部器件的连接。当然，其他实施例中，插针114和导电柱17的数量及具体结构不限于上述描述。
本实施例中，功率组件11a的两个功率芯片112之间，及功率芯片112与导电柱17之间均通过引线框架15连接。功率组件11b的两个功率芯片112之间，及功率芯片112与导电柱17之间均通过引线连接。当然，功率组件11a的两个功率芯片112之间，及功率芯片112与导电柱17之间还可以通过引线或其他导电结构连接。功率组件11b的两个功率芯片 112之间，及功率芯片112与导电柱17之间还可以通过引线框架15或其他导电结构连接。
功率组件11a的封装体113和功率组件11b的封装体113为一体结构，以使功率组件11a、功率组件11b和驱动板12形成的封装结构13的连接强度更好。具体的，功率组件11a的封装体113和功率组件11b的封装体113通过塑封工艺形成一体成型的封装体113。当然，功率组件11a的封装体113和功率组件11b的封装体113还可以通过壳体封装工艺形成。
本申请中的保护范围不限于上述实施例一至实施例四，实施例一至实施例四中的任意组合也在本申请的保护范围内，也就是说，上述描述的多个实施例还可根据实际需要任意组合。
请参阅图8，图8是图3所示的功率模组的制造方法的流程示意图。如图8所示，功率模组的制造方法，包括如下的S110～S130。
S110：提供第一功率板，其中，第一功率板包括基板111和设于基板111的安装面1110的功率芯片112。
具体的，请参阅图9-图12，提供第一功率板11c的具体步骤为，首先，如图9，提供基板111。基板111包括承载板a1、线路层a2和金属层a3，线路层a2和金属层a3分别形成于承载板a1相对两个表面，线路层a2和金属层a3分别位于承载板a1的两侧，以保证承载板a1的平整度，防止承载板a1发生翘曲。线路层a2背向承载板a1的表面为安装面1110，即功率芯片设于线路层a2背向承载板a1的表面，基板111背向功率芯片的表面为背面1111，即，金属层a3背向承载板a1的表面为背面1111。线路层a2包括第一线路a21和第二线路a22，第二线路a22位于第一线路a21的两侧，第一线路a21和第二线路a22背向承载板a1的表面共同构成安装面1110。当然，在其他实施例中，线路层a2的结构不局限上述结构，线路层a2的具体结构可根据功率芯片的连接需要设置。
本实施例中，承载板a1的材料可以为陶瓷等绝缘散热材料，陶瓷例如可以是氧化铝、氮化硅或氮化铝等陶瓷材料。陶瓷材料具有良好的散热效果，能快速为后续工艺设于基板111上的功率芯片散热。线路层a2和金属层a3的材料为金属材料，例如可以是铜、镍、铝等材料，能快速为后续工艺设于基板111上的功率芯片散热，还能有效增强基板111的强度。线路层a2和金属层a3的材料可以相同，也可以不相同。同时线路层a2还用于实现后续工艺设于基板111上的功率芯片与其他线路的电连接。当然，在其他实施例中，承载板a1的材料还可以其他绝缘材料。
其次，如图10，提供功率芯片112。功率芯片112可以是绝缘栅双极型晶体管(Insulated Gate Bipolar Transistor，IGBT)、金属氧化物半导体场效应晶体管(Metal Oxide Semiconductor Field Effect Transistor，MOSFET)和/或二极管。当然，在其他实施例中，可以先提供功率芯片112，后提供功率芯片112。或者可以同时提供基板111和功率芯片112。
然后，将功率芯片112设于基板111的安装面1110。具体的，在第一线路a21上印刷焊锡，然后将功率芯片112焊接于第一线路a21上。本实施例中，功率芯片112的数量为两个。将两个功率芯片112间隔设于第一线路a21上。当然，在其他实施例中，还可以将一个或多个功率芯片112焊接于第一线路a21上。或者，功率芯片112还可以根据不同条件通过焊接、粘接等连接方式固定在第一线路a21上。例如当功率芯片112需要和第一线路a21电连接时，功率芯片112可以通过焊接固定于第一线路a21，当功率芯片112不需要 和第一线路a21电连接时，功率芯片112可以通过粘接等其他方式固定于第一线路a21。
在将功率芯片112设于基板111的安装面1110的同时，将插针114固定于安装面1110。首先在第一线路a21上印刷焊锡的同时在第二线路a22上印刷焊锡，然后将功率芯片112焊接于第一线路a21上的同时也将插针114焊接与第二线路a22上。具体的，插针114为两个，两个插针114分别焊接于两个功率芯片112的两侧的第二线路a22。本实施例中，插针114垂直于安装面1110。插针114还可以通过锡膏焊接、超声焊接、银烧结等连接方式固接于其对应的第二线路a22。插针114的形状可以是圆柱形、椭圆柱，长方体形、多边体形等形状，两个插针114的形状可以相同，也可以不相同。插针114的材质可以为具有优异导电性能的Cu，Ag，Al等金属或合金。当然，插针114数量和排布方式还可以根据实际需要设置。插针114还可以不垂直于安装面1110。
本实施例将功率芯片112和插针114同时安装于安装面1110，有利于减少功率模组的制作步骤，降低生产成本，提高功率模组的生产效率。在其他实施例中，功率芯片112还可以先于插针114安装于安装面1110，或者插针114还可以先于功率芯片112安装于安装面1110。
接着，如图11-图12，在功率芯片112背向安装面1110的表面形成与功率芯片112电连接的导电件15，导电件15用于电连接功率芯片112和后续工艺安装的相关元件。具体的，形成导电件15的步骤具有多种实施方式，如下：
一种实施方式中，如图11，当导电件为铜柱15时，在功率芯片112背向安装面1110的表面形成导电件15之前，先电连接两个功率芯片112及电连接功率芯片112和其对应的插针114。两个功率芯片112之间通过引线连接，功率芯片112与其对应的插针114之间间接电连接，具体的，引线连接在第二线路a22和功率芯片112之间，以实现功率芯片112与其对应的插针114间接电连接。引线连接工艺成熟简单，成本低。当然，在其他实施例中，两个功率芯片112及功率芯片112和其对应的插针114均还可以通过引线框架等连接结构连接。然后，将铜柱15的一端固定连接在功率芯片112背向安装面1110的表面并与功率芯片112电连接。铜柱15的数量与功率芯片112的数量适应，一个铜柱15对应一个功率芯片112。当然，在其他实施例中，导电件15还可以是引线等其他导电结构连接。
另一种实施方式中，如图12，当导电件为引线框架15时，提供引线框架15，引线框架15包括相互连接的第一端151、第二端152和第三端153，第一端151分别与第二端152和第三端153电连接。本实施例中，引线框架15为两个，将引线框架15的第一端151与其对应的功率芯片112电连接，第三端153与其对应的第二线路a22连接，以通过第二线路a22与其对应的插针114连接，第二端152用于与后续工艺中的相关元件连接。且，还能通过引线框架15实现两个功率芯片112之间的电连接。
当导电件为引线框架15时，还是同时实现插针114和功率芯片112之间，及两个功率芯片112之间的电连接，从而不需要再额外引入引线连接功率芯片112和插针114及连接两个功率芯片112，功率模组的结构更加简单，同时也减少了功率模组的制作步骤，提高功率模组的成产效率，且引线框架15相比于引线通流能力更强，寄生参数更小，还可以增加功率芯片112的散热效果。
当然，在其他实施例中，如图13，不需要在功率芯片112背向安装面1110的表面形成 导电件，直接通过引线连接功率芯片112和插针114之间及连接两个功率芯片112之间。或者直接通过其他导电结构连接功率芯片112和插针114之间及连接两个功率芯片112之间。
S120：提供驱动板12，将驱动板12设于功率芯片112背向安装面1110的一侧，电连接驱动板12和功率芯片112，以形成待封装结构13a。
具体的，请参阅图14-图16，首先提供驱动板12。本实施例中，如图14，驱动板12包括中心区域121和围绕中心区域121的边缘区域122，中心区域121设有驱动芯片123、电阻124、电容和光耦等电子元件，以形成驱动电路。驱动板12还包括贯通孔125和通孔126，贯通孔125位于中心区域121，通孔126位于边缘区域122。当然，在其他实施例中，电阻124、电容和光耦等小型的电子元件也可以部分设于边缘区域122。或者，驱动板12还可以仅包括中心区域121，也就是说，驱动板12可以不包括边缘区域122。
然后，将驱动板12设于功率芯片112背向安装面1110的一侧，电连接驱动板12和功率芯片112，以形成待封装结构13a。具体的，将驱动板12设于插针114的两端之间，且靠近插针114电连接功率芯片112的一端。通过限制驱动板12设于靠近插针114电连接功率芯片112的一端，以保证驱动板12距离功率芯片112的距离足够短，从而保证驱动板12和功率芯片112之间的连接线路的寄生参数足够小，有效提高功率模组的电性能。
具体的，本步骤具有多种实施方式，一种实施方式为在功率芯片112背向安装面1110的表面设有铜柱15或者引线框架15的场景下，如图14和图15，首先将驱动板12设于铜柱15背向功率芯片112的一端或设于引线框架15的第二端152，中心区域121与第一功率板11c相对设置，插针114贯穿驱动板12的贯通孔125且与驱动板12绝缘连接。然后焊接铜柱15背向功率芯片112的一端或引线框架15的第二端152与驱动板12，以使驱动板12的驱动芯片123通过导电件15与功率芯片112电连接，以形成待封装结构13a。
本实施方式中，铜柱15的长度与驱动板12到功率芯片112之间的距离相等，可以理解的是，铜柱15的长度方向为电流在铜柱15中的流动方向，从而使得铜柱15的长度最短，即驱动板12与功率芯片112之间的连接线路最短，有效减小功率模组的连接线路的寄生参数，提高了功率模组的电性能。
另一种实施方式为功率芯片112背向安装面1110的表面未设有铜柱15或者引线框架15的场景下，如图16，首先将驱动板12设于功率芯片112背向安装面1110的一侧，中心区域121与第一功率板11c相对设置，插针114贯穿驱动板12的贯通孔125。然后电连接贯通孔125的孔壁和插针114，以使驱动板12的驱动芯片123通过插针114与功率芯片112电连接，以形成待封装结构13a。
其他实施例中，驱动板12仅包括中心区域121，且功率芯片112背向安装面1110的表面设有铜柱或者引线框架，插针114不垂直与安装面1110。在该场景下，如图17，图17以功率芯片112背向安装面1110的表面设有引线框架15为例进行说明。首先将驱动板12设于引线框架15的第二端152，中心区域121与第一功率板11c相对设置，并位于两个插针114之间。然后焊接引线框架15的第二端152与驱动板12，以使驱动板12的驱动芯片123通过引线框架15与功率芯片112电连接。最后，提供第二功率板11d，第二功率板11d和第一功率板11c的结构基本相同，将第二功率板11d设于驱动板12背向第一功率板11c 的一侧，并与第一功率板11c电连接，以形成待封装结构13a。具体的，第二功率板11d的安装面1110与第一功率板11c的安装面1110相对设置，即，第一功率板11c和第二功率板11d对称设于驱动板12的两侧。当然，插针114驱动板12第一功率板和第二功率板的排布方式不限于上述描述。功率芯片112还可以通过插针114以外的其他结构实现与电路板之间的连接。
S130：通过封装体113封装待封装结构13a，以形成功率模组。
具体的，请参阅图18-图19，本实施例通过塑封工艺封装待封装结构13a，待封装结构13a可以使如图14、图15、图16和图17所示的待封装结构13a，以下以待封装结构13a为图14所示的待封装结构13a为例进行说明。具体的，首先，将待封装结构13a放入封装模具中，插针114远离功率芯片112的端部伸出封装模具外部，封装模具内部设有避让结构，避让结构位于驱动板12的边缘区域122背向功率芯片112的表面，并通过边缘区域122的通孔朝向基板111的背面1111所在的平面延伸。然后，向封装模具中填充封装体113，封装体113的材料例如可以是环氧树脂等塑胶材料，封装体113固化后与待封装结构13a构成封装结构13，以形成功率模组10。最后，去除封装模具。本实施例通过塑封工艺形成的功率模组10密封性好，能提高功率模组10的抗湿性和可靠性。
本实施例中，封装体113封装于基板111的背面1111至驱动板12背向功率芯片112的一侧，插针114远离功率芯片112的端部露出封装体113，以便于与外部相关器件电连接。基板111的背面1111露出封装体113，由于金属层a3的背面1111露出封装体113，金属层a3可以有效将功率芯片112的热量传递至外界，提高功率芯片112的散热效率。且形成的封装结构13包括通过避让结构避让封装体113形成的贯穿通孔126和封装体113的安装孔131，相关部件通过安装孔131与封装结构13连接。边缘区域122背向功率芯片112的表面露出封装体113，以便于功率芯片112与相关结构配合。
在垂直于安装面1110的方向上，驱动板12与功率芯片112之间的距离小于驱动板12与封装体113背向安装面1110的表面之间的距离。本实施例通过限制驱动板12与功率芯片112之间的距离小于驱动板12与封装体133背向安装面1110的表面之间的距离，以保证驱动板12距离功率芯片112的距离足够短，从而保证驱动板12和功率芯片112之间的连接线路的寄生参数足够小，有效提高功率模组10的电性能。
最后，如图19，将散热器14与封装结构13固接，并散热器14与基板111的背面1111接触，以提高功率芯片112的散热效率。散热器14与封装结构13固接的具体步骤为螺钉132从边缘区域122背向功率芯片112的表面穿过安装孔131与散热器14螺接。边缘区域122背向功率芯片112的表面未设有封装体113，以便于螺钉132从边缘区域122背向功率芯片112的表面固定。同时，封装体113属于脆性材料，如果承受较大的应力很容易断裂，由于边缘区域122未设有封装体，螺钉132直接将锁持力传递给驱动板12，减小封装体113承受的应力，避免螺钉132将锁持力直接传递给封装体113而导致封装体113开裂的风险。当然，在其他实施例中，还可以将散热器14通过螺接或其他固定方式固接于封装结构13。或者，封装结构13还可以与散热器14通过粘接、卡接等其他连接方式连接固定。
如图20，在待封装结构13a(图17)由第一功率板11c、驱动板12和第二功率板11d构成的实施例中，通过封装体113封装该待封装结构13a之后，第一功率板11c和第二功 率板11d的基板111的背面1111均露出封装体113，以便于第一功率板11c和第二功率板11d的基板111均与其对应的散热器连接，以实现该功率模组10的良好散热。
在其他实施例中，如图21，通过封装体113封装待封装结构13a的具体方法还可以为：首先，提供封装壳体16，将待封装结构13a固定在封装壳体16中，插针114远离安装面1110的一端露出封装壳体16。待封装结构13a可以由第一功率板11c和驱动板12构成(如图21)，也可以有第一功率板11c、驱动板12和第二功率板构成。然后，向封装壳体16内灌胶，以填充封装壳体16内的空隙，形成封装体113，封装体113与待封装结构13a和封装壳体16共同构成封装结构13，以形成功率模组10。具体的，通过向封装壳体16中灌硅凝胶以形成封装体113。本实施例通过壳体封装工艺形成封装体113，该工艺简单，有效提高了功率模组10的生产效率。在本实施例的场景中，待封装结构13a中的驱动板12仅包括中心区域121。散热器14设于封装壳体16上以为功率模组10散热。
本申请的功率模组10的制造方法通过将驱动板12设于功率芯片112背向安装面1110的一侧，电连接驱动板12和功率芯片112，形成待封装结构13a，然后封装待封装结构13a以形成封装结构13。也就是说，将驱动板12和功率芯片112封装在一起，能够缩短驱动板12和功率芯片112之间的距离，进而缩短功率芯片112与驱动板12之间的连接线路，有效减小功率芯片112与驱动板12之间的连接线路的寄生参数，即减小功率模组10的寄生参数，提高功率模组10的电性能。同时，将驱动板12和第一功率板11c封装在一起，相比于将驱动板12与第一功率板11c共面设置，能有效减小功率模组10的平面面积。由于第一功率板11c封装时为了保证其封装后的强度，通常第一功率板11c封装后的厚度都会在5mm以上，这个厚度足以允许驱动板12和第一功率板11c封装在一起，而不增加第一功率板11c的厚度，也就是说，将驱动板12和第一功率板11c封装在一起不会对封装后的厚度产生影响，有效提高了功率模组10的集成度，减小封装体113积，降低功率模组10的成本。
以上，仅为本申请的具体实施方式，但本申请的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本申请揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本申请的保护范围之内。因此，本申请的保护范围应以权利要求的保护范围为准。

Claims (20)

  1. 一种功率模组，其特征在于，所述功率模组包括功率组件和驱动板，所述功率组件包括基板、功率芯片和封装体，所述功率芯片设于所述基板的安装面，所述封装体将所述功率芯片封装于所述基板上，所述驱动板设于所述封装体内并位于所述功率芯片背向所述安装面的一侧，所述驱动板和所述功率芯片电连接。
  2. 根据权利要求1所述的功率模组，其特征在于，在垂直于所述安装面的方向上，所述驱动板与所述功率芯片之间的距离小于所述驱动板与所述封装体背向所述安装面的表面之间的距离。
  3. 根据权利要求1或2所述的功率模组，其特征在于，所述功率组件还包括插针，所述插针贯穿所述驱动板和部分所述封装体，且所述插针的一端设于所述安装面，并与所述功率芯片电连接，所述插针的另一端露出所述封装体。
  4. 根据权利要求3所述的功率模组，其特征在于，所述驱动板通过所述插针电连接至所述功率芯片。
  5. 根据权利要求3所述的功率模组，其特征在于，所述功率模组还包括导电件，所述导电件位于所述功率芯片和所述驱动板之间，所述功率芯片和所述驱动板通过导电件连接。
  6. 根据权利要求5所述的功率模组，其特征在于，所述导电件为铜柱，所述铜柱的两端分别电连接至所述功率芯片和所述驱动板。
  7. 根据权利要求5所述的功率模组，其特征在于，所述导电件为引线框架，所述引线框架包括相互连接的第一端和第二端，所述第一端与所述功率芯片电连接，所述第二端与所述驱动板电连接。
  8. 根据权利要求7所述的功率模组，其特征在于，所述引线框架还包括与所述第一端电连接的第三端，所述第三端电连接所述插针。
  9. 根据权利要求3-8任一项所述的功率模组，其特征在于，所述功率模组还包括封装壳体，所述功率组件和所述驱动板收容于所述封装壳体内部，所述插针背向所述功率芯片的一端伸出所述封装壳体外部，所述封装体通过壳体封装工艺填充于所述封装壳体内的空隙中。
  10. 根据权利要求1-8任一项所述的功率模组，其特征在于，所述驱动板与所述功率组件构成封装结构，所述基板背向所述功率芯片的表面为背面，所述背面露出所述封装体，所述功率模组还包括散热器，所述散热器固接于所述封装结构并与所述背面接触。
  11. 根据权利要求10所述的功率模组，其特征在于，所述驱动板包括中心区域和围绕所述中心区域的边缘区域，所述中心区域与所述功率组件相对设置，所述封装结构包括安装孔，所述安装孔位于所述边缘区域，并从所述驱动板朝向所述功率芯片的方向贯穿所述驱动板和所述封装体，所述散热器通过所述安装孔与所述封装结构连接。
  12. 根据权利要求11所述的功率模组，其特征在于，所述边缘区域背向所述功率芯片的表面露出所述封装体，以便于螺钉从所述边缘区域背向所述功率芯片的表面固定。
  13. 根据权利要求1所述的功率模组，其特征在于，所述功率组件为两个，两个所述功率组件的所述安装面相对设置且电连接，两个功率组件的封装体连接，所述驱动板设于两个所述功率组件之间并与至少一个功率组件电连接。
  14. 一种转换器，其特征在于，所述转换器包括电路板和权利要求1-13任一项所述的功率模组，所述功率模组与所述电路板电连接。
  15. 一种电子设备，其特征在于，所述电子设备包括权利要求14所述的转换器，所述转换器用于实现电子设备的电信号的转换。
  16. 一种功率模组的制造方法，其特征在于，所述制造方法包括：
    提供第一功率板，其中，所述第一功率板包括基板和设于所述基板的安装面的功率芯片；
    提供驱动板，将所述驱动板设于所述功率芯片背向所述安装面的一侧，电连接所述驱动板和所述功率芯片，以形成待封装结构；
    通过封装体封装所述待封装结构，以形成功率模组。
  17. 根据权利要求16所述的功率模组的制造方法，其特征在于，所述制造方法还包括，在将所述驱动板设于所述功率芯片背向所述安装面的一侧之前，在所述功率芯片背向所述安装面的表面形成与所述功率芯片电连接的导电件，所述驱动板设于所述功率芯片背向所述安装面的一侧时所述驱动板与所述导电件电连接。
  18. 根据权利要求17所述的功率模组的制造方法，其特征在于，所述导电件为铜柱，或者所述导电件为引线框架。
  19. 根据权利要求16-18任一项所述的功率模组的制造方法，其特征在于，所述制造方法还包括在将所述功率芯片设于所述基板的所述安装面的同时，将插针固定于所述安装面，所述驱动板设于所述功率芯片背向所述安装面的一侧时，所述插针贯穿所述驱动板。
  20. 根据权利要求16-18任一项所述的功率模组的制造方法，其特征在于，所述制造方法还包括，电连接所述驱动板和所述第一功率板之后，再提供第二功率板，将所述第二功率板设于所述驱动板背向所述第一功率板的一侧，并与所述第一功率板电连接，以形成待封装结构。
PCT/CN2020/115360 2020-09-15 2020-09-15 功率模组及其制造方法、转换器和电子设备 WO2022056679A1 (zh)

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