JP2010123697A - 半導体装置の製造方法及びこれに用いるsoq基板 - Google Patents
半導体装置の製造方法及びこれに用いるsoq基板 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 65
- 239000000758 substrate Substances 0.000 title claims abstract description 48
- 238000000034 method Methods 0.000 title claims abstract description 9
- 238000007689 inspection Methods 0.000 claims abstract description 46
- 239000010453 quartz Substances 0.000 claims abstract description 19
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 33
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 235000012431 wafers Nutrition 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 229920005591 polysilicon Polymers 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
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- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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Abstract
【解決手段】本発明に係る半導体装置の製造方法は、石英基板の上に半導体層を形成してなるSOQ基板を準備する工程と;前記SOQ基板上に、複数の半導体装置形成領域とクラック検査用のパターンを形成する工程と;前記パターンを観察し、当該パターンにクラックが発生しているか否かを検査する第1の検査工程と;前記第1の検査工程の結果、前記パターンにクラックが発生している場合には、前記半導体装置形成領域内のクラックを検査する第2の検査工程とを含むことを特徴とする。
【選択図】図2
Description
12:半導体装置形成領域
110、210:検査用パターン
112a,112b,212a,212b:大面積ゲート
114,214:コンタクト
Claims (14)
- 石英基板の上に半導体層を形成してなるSOQ基板を準備する工程と;
前記SOQ基板上に、複数の半導体装置形成領域とクラック検査用のパターンを形成する工程と;
前記パターンを観察し、当該パターンにクラックが発生しているか否かを検査する第1の検査工程と;
前記第1の検査工程の結果、前記パターンにクラックが発生している場合には、前記半導体装置形成領域内のクラックを検査する第2の検査工程とを含むことを特徴とする半導体装置の製造方法。 - 前記パターンは、前記半導体装置形成領域内よりもクラックが発生しやすい構造であることを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記パターンは、前記半導体装置形成領域内に形成されるゲートよりも面積の大きな大面積ゲート及び当該大面積ゲートの近傍に形成されたコンタクトを有することを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記コンタクトは、並列的に複数形成されていることを特徴とする請求項3に記載の半導体装置の製造方法。
- 前記コンタクトの延長線上に、クラックの広がりを阻止するガード領域を形成したことを特徴とする請求項4に記載の半導体装置の製造方法。
- 前記パターンは、前記半導体装置形成領域とは異なる領域に形成されることを特徴とする請求項1,2,3,4又は5に記載の半導体装置の製造方法。
- 前記パターンは、前記半導体装置形成領域内に形成されることを特徴とする請求項5に記載の半導体装置の製造方法。
- 石英基板の上に半導体層を形成してなるSOQ基板において、
複数の半導体装置形成領域と伴にクラック検査用のパターンを有することを特徴とする半導体装置製造用SOQ基板。 - 前記パターンは、前記半導体装置形成領域内よりもクラックが発生しやすい構造であることを特徴とする請求項8に記載の半導体装置製造用SOQ基板。
- 前記パターンは、前記半導体装置形成領域内に形成されるゲートよりも面積の大きな大面積ゲート及び当該大面積ゲートの近傍に形成されたコンタクトを有することを特徴とする請求項9に記載の半導体装置製造用SOQ基板。
- 前記コンタクトは、並列的に複数形成されていることを特徴とする請求項10に記載の半導体装置製造用SOQ基板。
- 前記コンタクトの延長線上に、クラックの広がりを阻止するガード領域を形成したことを特徴とする請求項11に記載の半導体装置製造用SOQ基板。
- 前記パターンは、前記半導体装置形成領域とは異なる領域に形成されることを特徴とする請求項8,9,10,11又は12に記載の半導体装置製造用SOQ基板。
- 前記パターンは、前記半導体装置形成領域内に形成されることを特徴とする請求項12に記載の半導体装置製造用SOQ基板。
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US12/619,835 US8242499B2 (en) | 2008-11-18 | 2009-11-17 | Method of producing semiconductor device and SOQ (Silicon On Quartz) substrate used in the method |
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