JP2010115832A5 - - Google Patents

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Publication number
JP2010115832A5
JP2010115832A5 JP2008289806A JP2008289806A JP2010115832A5 JP 2010115832 A5 JP2010115832 A5 JP 2010115832A5 JP 2008289806 A JP2008289806 A JP 2008289806A JP 2008289806 A JP2008289806 A JP 2008289806A JP 2010115832 A5 JP2010115832 A5 JP 2010115832A5
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JP
Japan
Prior art keywords
self
block copolymer
forming
pattern
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008289806A
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English (en)
Japanese (ja)
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JP2010115832A (ja
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Publication date
Application filed filed Critical
Priority to JP2008289806A priority Critical patent/JP2010115832A/ja
Priority claimed from JP2008289806A external-priority patent/JP2010115832A/ja
Priority to PCT/JP2009/004217 priority patent/WO2010055601A1/ja
Publication of JP2010115832A publication Critical patent/JP2010115832A/ja
Publication of JP2010115832A5 publication Critical patent/JP2010115832A5/ja
Priority to US13/085,954 priority patent/US20110186544A1/en
Pending legal-status Critical Current

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JP2008289806A 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法 Pending JP2010115832A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2008289806A JP2010115832A (ja) 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法
PCT/JP2009/004217 WO2010055601A1 (ja) 2008-11-12 2009-08-28 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法
US13/085,954 US20110186544A1 (en) 2008-11-12 2011-04-13 Method of accelerating self-assembly of block copolymer and method of forming self-assembled pattern of block copolymer using the accelerating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008289806A JP2010115832A (ja) 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2010289550A Division JP4815011B2 (ja) 2010-12-27 2010-12-27 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法
JP2010289544A Division JP4815010B2 (ja) 2010-12-27 2010-12-27 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法

Publications (2)

Publication Number Publication Date
JP2010115832A JP2010115832A (ja) 2010-05-27
JP2010115832A5 true JP2010115832A5 (https=) 2011-02-17

Family

ID=42169748

Family Applications (1)

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JP2008289806A Pending JP2010115832A (ja) 2008-11-12 2008-11-12 ブロックコポリマーの自己組織化促進方法及びそれを用いたブロックコポリマーの自己組織化パターン形成方法

Country Status (3)

Country Link
US (1) US20110186544A1 (https=)
JP (1) JP2010115832A (https=)
WO (1) WO2010055601A1 (https=)

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JP5300799B2 (ja) * 2010-07-28 2013-09-25 株式会社東芝 パターン形成方法及びポリマーアロイ下地材料
JP5259661B2 (ja) * 2010-09-07 2013-08-07 株式会社東芝 パターン形成方法
JP5112500B2 (ja) * 2010-11-18 2013-01-09 株式会社東芝 パターン形成方法
KR20120126725A (ko) 2011-05-12 2012-11-21 에스케이하이닉스 주식회사 반도체 소자의 형성 방법
WO2013040483A1 (en) 2011-09-15 2013-03-21 Wisconsin Alumni Research Foundation Directed assembly of block copolymer films between a chemically patterned surface and a second surface
JP5694109B2 (ja) * 2011-09-26 2015-04-01 株式会社東芝 パターン形成方法
JP2013075984A (ja) 2011-09-30 2013-04-25 Toshiba Corp 微細構造体の製造方法
KR20140136933A (ko) 2012-02-10 2014-12-01 보드 오브 리전츠, 더 유니버시티 오브 텍사스 시스템 블록 공중합체 박막에서 도메인 배향을 조절하기 위해 화학 증착된 필름의 사용
SG11201404414SA (en) 2012-02-10 2014-08-28 Univ Texas Anhydride copolymer top coats for orientation control of thin film block copolymers
US9314819B2 (en) 2012-02-10 2016-04-19 Board Of Regents, The University Of Texas System Anhydride copolymer top coats for orientation control of thin film block copolymers
JP6089298B2 (ja) * 2012-04-10 2017-03-08 裕司 清野 パターン形成方法、スチレン系ポリマー薄膜付き基材、表面撥水性材料、パスワード生成装置、培養器、パターン形成剤、及び反転パターン形成方法。
KR101529646B1 (ko) * 2012-09-10 2015-06-17 주식회사 엘지화학 실리콘 옥사이드의 나노 패턴 형성 방법, 금속 나노 패턴의 형성 방법 및 이를 이용한 정보저장용 자기 기록 매체
JP5752655B2 (ja) * 2012-09-10 2015-07-22 株式会社東芝 パターン形成方法
JP5537628B2 (ja) * 2012-10-09 2014-07-02 株式会社東芝 自己組織化パターンの形成方法
JP6027912B2 (ja) * 2013-02-22 2016-11-16 東京応化工業株式会社 相分離構造を含む構造体の製造方法、及びパターン形成方法、並びにトップコート材料
US9666443B2 (en) 2013-03-15 2017-05-30 Asml Netherlands B.V. Methods for providing lithography features on a substrate by self-assembly of block copolymers
TWI658055B (zh) * 2013-06-19 2019-05-01 德州大學董事會 用於薄膜嵌段共聚物之定向控制之酸酐共聚物面塗層
JP5981392B2 (ja) 2013-06-19 2016-08-31 株式会社東芝 パターン形成方法
US10490402B2 (en) 2013-09-04 2019-11-26 Tokyo Electron Limited UV-assisted stripping of hardened photoresist to create chemical templates for directed self-assembly
US9349604B2 (en) 2013-10-20 2016-05-24 Tokyo Electron Limited Use of topography to direct assembly of block copolymers in grapho-epitaxial applications
US9793137B2 (en) 2013-10-20 2017-10-17 Tokyo Electron Limited Use of grapho-epitaxial directed self-assembly applications to precisely cut logic lines
EP3101043B1 (en) 2013-12-06 2021-01-27 LG Chem, Ltd. Block copolymer
WO2015084133A1 (ko) * 2013-12-06 2015-06-11 주식회사 엘지화학 블록 공중합체
CN105934455B (zh) 2013-12-06 2019-01-18 株式会社Lg化学 嵌段共聚物
CN105916904B (zh) 2013-12-06 2018-11-09 株式会社Lg化学 嵌段共聚物
US10239980B2 (en) 2013-12-06 2019-03-26 Lg Chem, Ltd. Block copolymer
JP6483693B2 (ja) 2013-12-06 2019-03-13 エルジー・ケム・リミテッド ブロック共重合体
CN105934454B (zh) 2013-12-06 2019-01-18 株式会社Lg化学 嵌段共聚物
CN105980342B (zh) 2013-12-06 2019-02-15 株式会社Lg化学 单体和嵌段共聚物
CN105899557B (zh) 2013-12-06 2018-10-26 株式会社Lg化学 嵌段共聚物
CN105873969B (zh) 2013-12-06 2018-09-04 株式会社Lg化学 嵌段共聚物
US10227436B2 (en) 2013-12-06 2019-03-12 Lg Chem, Ltd. Block copolymer
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US10087276B2 (en) 2013-12-06 2018-10-02 Lg Chem, Ltd. Block copolymer
JP6496318B2 (ja) 2013-12-06 2019-04-03 エルジー・ケム・リミテッド ブロック共重合体
KR101768291B1 (ko) 2013-12-06 2017-08-17 주식회사 엘지화학 블록 공중합체
JP6524220B2 (ja) 2014-09-30 2019-06-05 エルジー・ケム・リミテッド ブロック共重合体
WO2016053000A1 (ko) 2014-09-30 2016-04-07 주식회사 엘지화학 블록 공중합체
CN107075054B (zh) 2014-09-30 2020-05-05 株式会社Lg化学 嵌段共聚物
EP3202802B1 (en) 2014-09-30 2022-11-23 LG Chem, Ltd. Block copolymer
WO2016052994A1 (ko) 2014-09-30 2016-04-07 주식회사 엘지화학 블록 공중합체
JP6538159B2 (ja) * 2014-09-30 2019-07-03 エルジー・ケム・リミテッド ブロック共重合体
WO2016053007A1 (ko) 2014-09-30 2016-04-07 주식회사 엘지화학 패턴화 기판의 제조 방법
CN107075055B (zh) * 2014-09-30 2019-08-27 株式会社Lg化学 嵌段共聚物
EP3202798B1 (en) 2014-09-30 2022-01-12 LG Chem, Ltd. Block copolymer
WO2016053011A1 (ko) * 2014-09-30 2016-04-07 주식회사 엘지화학 블록 공중합체
KR20160038701A (ko) * 2014-09-30 2016-04-07 주식회사 엘지화학 패턴화 기판의 제조 방법
EP3203496B1 (en) 2014-09-30 2021-12-29 LG Chem, Ltd. Method for producing patterned substrate
US9947597B2 (en) 2016-03-31 2018-04-17 Tokyo Electron Limited Defectivity metrology during DSA patterning
US10303049B2 (en) * 2017-03-22 2019-05-28 Canon Kabushiki Kaisha Reducing electric charge in imprint lithography
TWI805617B (zh) 2017-09-15 2023-06-21 南韓商Ｌｇ化學股份有限公司 層壓板
JP7528580B2 (ja) * 2020-07-10 2024-08-06 Ｔｏｐｐａｎホールディングス株式会社 パターン膜及びその形成方法
JP7552110B2 (ja) * 2020-07-10 2024-09-18 Ｔｏｐｐａｎホールディングス株式会社 パターン膜の形成方法及びパターン膜

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JP4455645B2 (ja) * 2001-12-28 2010-04-21 株式会社東芝 発光素子
TW576864B (en) * 2001-12-28 2004-02-21 Toshiba Corp Method for manufacturing a light-emitting device
EP1866064A4 (en) * 2005-03-09 2009-08-19 Univ California NANOCOMPOSITE MEMBRANES AND METHOD FOR THE PRODUCTION AND USE THEREOF
US20070093587A1 (en) * 2005-10-25 2007-04-26 Starfire Systems Silicon carbide precursors and uses thereof
JP4673266B2 (ja) * 2006-08-03 2011-04-20 日本電信電話株式会社 パターン形成方法及びモールド
US20080038467A1 (en) * 2006-08-11 2008-02-14 Eastman Kodak Company Nanostructured pattern method of manufacture
US8097175B2 (en) * 2008-10-28 2012-01-17 Micron Technology, Inc. Method for selectively permeating a self-assembled block copolymer, method for forming metal oxide structures, method for forming a metal oxide pattern, and method for patterning a semiconductor structure
US8101261B2 (en) * 2008-02-13 2012-01-24 Micron Technology, Inc. One-dimensional arrays of block copolymer cylinders and applications thereof
JP4654279B2 (ja) * 2008-08-28 2011-03-16 株式会社日立製作所 微細構造を有する高分子薄膜およびパターン基板の製造方法

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