JP2010098336A - GaN半導体発光素子及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 66
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 22
- 239000000758 substrate Substances 0.000 claims abstract description 54
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 19
- 238000005253 cladding Methods 0.000 claims description 70
- 238000000034 method Methods 0.000 claims description 64
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 abstract description 31
- 230000003287 optical effect Effects 0.000 abstract description 9
- 230000000694 effects Effects 0.000 abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 197
- 229910002601 GaN Inorganic materials 0.000 description 190
- 230000008569 process Effects 0.000 description 21
- 229910052594 sapphire Inorganic materials 0.000 description 18
- 239000010980 sapphire Substances 0.000 description 18
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 12
- 150000004767 nitrides Chemical class 0.000 description 8
- 238000000407 epitaxy Methods 0.000 description 7
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 7
- 229910021529 ammonia Inorganic materials 0.000 description 6
- 238000005424 photoluminescence Methods 0.000 description 5
- 230000000644 propagated effect Effects 0.000 description 5
- 238000002017 high-resolution X-ray diffraction Methods 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000005019 vapor deposition process Methods 0.000 description 3
- 208000012868 Overgrowth Diseases 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Abstract
【解決手段】本発明は、GaN半導体物質を成長させるための基板と、上記基板上に形成され、Alがドープされたn型GaNクラッド層と、上記n型GaNクラッド層上に形成され量子井戸構造を有する活性層と、上記活性層上に形成されるp型GaNクラッド層とを含むフリップチップ用GaN半導体発光素子を提供する。
【選択図】図1
Description
31、41 n型GaNクラッド層
32、42 活性層
33、43 p型GaNクラッド層
341、441 バッファ層
342、442 GaN中間層
343、443 AlがドープされたGaN層
Claims (24)
- GaN半導体物質を成長させるための基板と、
上記基板上に形成され、Alがドープされたn型GaNクラッド層と、
上記n型GaNクラッド層上に形成され量子井戸構造を有する活性層と、
上記活性層上に形成されるp型GaNクラッド層と、
を含むフリップチップ用GaN半導体発光素子。 - 上記n型GaNクラッド層はAl含有量が0.01%ないし1%でAlドープされたことを特徴とする請求項1に記載のGaN半導体発光素子。
- 上記基板と上記n型GaNクラッド層との間に形成されるバッファ層をさらに含むことを特徴とする請求項1に記載のGaN半導体発光素子。
- 上記バッファ層は、
上記基板上に形成されるAlシード層と、
上記Alシード層上に形成される単結晶AlN層と、
を含むことを特徴とする請求項3に記載のGaN半導体発光素子。 - 上記単結晶AlN層の厚さは10nmないし50nmであることを特徴とする請求項4に記載のGaN半導体発光素子。
- 上記バッファ層は、非結晶質のAlN層または非結晶質のGaN層であることを特徴とする請求項3に記載のGaN半導体発光素子。
- 上記バッファ層とn型GaNクラッド層との間に形成されるGaN中間層をさらに含むことを特徴とする請求項1に記載のGaN半導体発光素子。
- 上記GaN中間層の厚さは100nmないし1μmであることを特徴とする請求項7に記載のGaN半導体発光素子。
- 上記GaN中間層と上記n型GaNクラッド層との間に形成されるAlがドープされたGaN層をさらに含むことを特徴とする請求項1に記載のGaN半導体発光素子。
- 上記AlがドープされたGaN層はAl含有量が0.01%ないし1%でAlドープされたことを特徴とする請求項9に記載のGaN半導体発光素子。
- 上記AlがドープされたGaN層の厚さは1μmないし4μmであることを特徴とする請求項9または10に記載のGaN半導体発光素子。
- GaN半導体物質を成長させるための基板を用意する段階と、
上記基板上にAlがドープされたn型GaNクラッド層を形成する段階と、
上記n型GaNクラッド層上に量子井戸構造を有する活性層を形成する段階と、
上記活性層上にp型GaNクラッド層を形成する段階と、
を含むGaN半導体発光素子の製造方法。 - 上記n型GaNクラッド層を形成する段階は、Al含有量が0.01%ないし1%でAlドープされたn型GaNクラッド層を形成する段階であることを特徴とする請求項12に記載のGaN半導体発光素子の製造方法。
- 上記n型GaNクラッド層を形成する段階以前に、上記基板上にバッファ層を形成する段階をさらに含むことを特徴とする請求項12に記載のGaN半導体発光素子の製造方法。
- 上記バッファ層を形成する段階は、
上記基板上にAlシード層を形成する段階と、
上記Alシード層上に単結晶AlN層を形成する段階と、
を含むことを特徴とする請求項14に記載のGaN半導体発光素子の製造方法。 - 上記単結晶AlN層を形成する段階は、MOCVD法を用いて1000℃ないし1100℃の高温において単結晶AlN層を形成する段階であることを特徴とする請求項15に記載のGaN半導体発光素子の製造方法。
- 上記単結晶AlN層を形成する段階は、10nmないし50nmの厚さで単結晶AlN層を形成する段階であることを特徴とする請求項15または16に記載のGaN半導体発光素子の製造方法。
- 上記バッファ層を形成する段階は、上記基板上に非結晶質AlN層を形成する段階または上記基板上に非結晶質GaN層を形成する段階であることを特徴とする請求項14に記載のGaN半導体発光素子の製造方法。
- 上記n型GaNクラッド層を形成する段階以前に、上記バッファ層上にGaN中間層を形成する段階をさらに含むことを特徴とする請求項12に記載のGaN半導体発光素子。
- 上記GaN中間層を形成する段階は、100nmないし1μmの厚さでGaN中間層を形成する段階であることを特徴とする請求項19に記載のGaN半導体発光素子。
- 上記n型GaNクラッド層を形成する段階以前に、上記GaN中間層上にAlがドープされたGaN層を形成する段階をさらに含むことを特徴とする請求項12に記載のGaN半導体発光素子の製造方法。
- 上記AlがドープされたGaN層を形成する段階はAl含有量が0.01%ないし1%でAlドープされたGaN層を形成する段階であることを特徴とする請求項21に記載のGaN半導体発光素子の製造方法。
- 上記AlがドープされたGaN層を形成する段階は、1μmないし4μmの厚さでGaN層を形成する段階であることを特徴とする請求項21または22に記載のGaN半導体発光素子。
- 上記活性層とp型GaNクラッド層の一部を除去して上記n型GaNクラッド層の一部領域を露出させる段階と、
上記p型GaNクラッド層上にpメタル層を形成する段階と、
上記pメタル層上にp側ボンディング電極及び上記露出したn型GaNクラッド層の一部領域にn側電極を形成する段階と、
をさらに含むことを特徴とする請求項12に記載のGaN半導体発光素子。
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KR1020030095988A KR100576857B1 (ko) | 2003-12-24 | 2003-12-24 | GaN 반도체 발광소자 및 그 제조방법 |
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KR100506739B1 (ko) * | 2003-12-23 | 2005-08-08 | 삼성전기주식회사 | 알루미늄(Al)을 함유한 질화물 반도체 결정 성장방법 |
KR100611491B1 (ko) * | 2004-08-26 | 2006-08-10 | 엘지이노텍 주식회사 | 질화물 반도체 발광소자 및 그 제조방법 |
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JP4939014B2 (ja) * | 2005-08-30 | 2012-05-23 | 国立大学法人徳島大学 | Iii族窒化物半導体発光素子およびiii族窒化物半導体発光素子の製造方法 |
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TWI416762B (zh) | 2010-08-23 | 2013-11-21 | Univ Nat Sun Yat Sen | 同質異相量子井 |
KR101045949B1 (ko) | 2010-08-24 | 2011-07-01 | (주)세미머티리얼즈 | 질화물 반도체 발광소자 및 이의 제조 방법 |
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Also Published As
Publication number | Publication date |
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US7674643B2 (en) | 2010-03-09 |
JP2005191519A (ja) | 2005-07-14 |
US20060215256A1 (en) | 2006-09-28 |
US20050139818A1 (en) | 2005-06-30 |
KR100576857B1 (ko) | 2006-05-10 |
KR20050064527A (ko) | 2005-06-29 |
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