JP2010074120A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2010074120A JP2010074120A JP2008315512A JP2008315512A JP2010074120A JP 2010074120 A JP2010074120 A JP 2010074120A JP 2008315512 A JP2008315512 A JP 2008315512A JP 2008315512 A JP2008315512 A JP 2008315512A JP 2010074120 A JP2010074120 A JP 2010074120A
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- insulating layer
- semiconductor device
- layer
- film
- connection terminal
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 377
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 79
- 239000000758 substrate Substances 0.000 claims abstract description 114
- 239000000463 material Substances 0.000 claims abstract description 98
- 239000004642 Polyimide Substances 0.000 claims abstract description 89
- 229920001721 polyimide Polymers 0.000 claims abstract description 89
- 150000001875 compounds Chemical class 0.000 claims abstract description 37
- 230000005260 alpha ray Effects 0.000 claims abstract description 23
- 239000010949 copper Substances 0.000 claims description 99
- 238000000034 method Methods 0.000 claims description 86
- 239000011256 inorganic filler Substances 0.000 claims description 73
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 73
- 239000010936 titanium Substances 0.000 claims description 62
- 229910000679 solder Inorganic materials 0.000 claims description 44
- 238000001514 detection method Methods 0.000 claims description 20
- 238000004380 ashing Methods 0.000 claims description 19
- 229910052802 copper Inorganic materials 0.000 claims description 19
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 16
- 238000007740 vapor deposition Methods 0.000 claims description 15
- 239000006229 carbon black Substances 0.000 claims description 13
- 238000009713 electroplating Methods 0.000 claims description 13
- 239000012860 organic pigment Substances 0.000 claims description 13
- 229910052719 titanium Inorganic materials 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 239000012535 impurity Substances 0.000 claims description 12
- 238000007788 roughening Methods 0.000 claims description 11
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 230000000903 blocking effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 494
- 229910052751 metal Inorganic materials 0.000 description 100
- 239000002184 metal Substances 0.000 description 100
- 229920005989 resin Polymers 0.000 description 48
- 239000011347 resin Substances 0.000 description 48
- 238000004544 sputter deposition Methods 0.000 description 39
- 230000015572 biosynthetic process Effects 0.000 description 25
- 238000010586 diagram Methods 0.000 description 19
- 229910045601 alloy Inorganic materials 0.000 description 14
- 239000000956 alloy Substances 0.000 description 14
- 238000005520 cutting process Methods 0.000 description 14
- 230000001681 protective effect Effects 0.000 description 14
- 229910052718 tin Inorganic materials 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 8
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 6
- 229910052776 Thorium Inorganic materials 0.000 description 6
- 229910052770 Uranium Inorganic materials 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000000941 radioactive substance Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- DNYWZCXLKNTFFI-UHFFFAOYSA-N uranium Chemical compound [U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U][U] DNYWZCXLKNTFFI-UHFFFAOYSA-N 0.000 description 6
- 239000000853 adhesive Substances 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 239000004643 cyanate ester Substances 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000011889 copper foil Substances 0.000 description 4
- 239000011888 foil Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000006072 paste Substances 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- 230000002195 synergetic effect Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- 229910002091 carbon monoxide Inorganic materials 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 2
- 239000000779 smoke Substances 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 239000006243 Fine Thermal Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 239000006244 Medium Thermal Substances 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 235000008331 Pinus X rigitaeda Nutrition 0.000 description 1
- 235000011613 Pinus brutia Nutrition 0.000 description 1
- 241000018646 Pinus brutia Species 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- PYKYMHQGRFAEBM-UHFFFAOYSA-N anthraquinone Natural products CCC(=O)c1c(O)c2C(=O)C3C(C=CC=C3O)C(=O)c2cc1CC(=O)OC PYKYMHQGRFAEBM-UHFFFAOYSA-N 0.000 description 1
- 150000004056 anthraquinones Chemical class 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 210000000988 bone and bone Anatomy 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000006231 channel black Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 238000004040 coloring Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001023 inorganic pigment Substances 0.000 description 1
- 238000004255 ion exchange chromatography Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000006233 lamp black Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 oxygen ions Chemical class 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
- 235000013311 vegetables Nutrition 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- NWONKYPBYAMBJT-UHFFFAOYSA-L zinc sulfate Chemical compound [Zn+2].[O-]S([O-])(=O)=O NWONKYPBYAMBJT-UHFFFAOYSA-L 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
- H01L23/556—Protection against radiation, e.g. light or electromagnetic waves against alpha rays
-
- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0231—Manufacturing methods of the redistribution layers
- H01L2224/02319—Manufacturing methods of the redistribution layers by using a preform
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/023—Redistribution layers [RDL] for bonding areas
- H01L2224/0233—Structure of the redistribution layers
- H01L2224/02333—Structure of the redistribution layers being a bump
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/05001—Internal layers
- H01L2224/05099—Material
- H01L2224/051—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05147—Copper [Cu] as principal constituent
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05541—Structure
- H01L2224/05548—Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
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- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05617—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/05624—Aluminium [Al] as principal constituent
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1302—Disposition
- H01L2224/13024—Disposition the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
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- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
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- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01011—Sodium [Na]
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- H01L2924/01—Chemical elements
- H01L2924/01022—Titanium [Ti]
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Abstract
【解決手段】 電極パッドを有する半導体チップが形成される半導体基板と、前記電極パッドに設けられる内部接続端子と、前記複数の半導体チップと前記内部接続端子とを覆うように設けられる絶縁層と、前記絶縁層を挟んで前記内部接続端子と接続される配線パターンと、を有する半導体装置であって、前記絶縁層は、ポリイミド及び/又はポリイミド系化合物等のα線を遮蔽する材料を含んで構成されることを特徴とする。
【選択図】 図12
Description
図12は、本発明の第1の実施の形態に係る半導体装置を例示する断面図である。図12を参照するに、半導体装置10は、半導体チップ11と、内部接続端子12と、絶縁層13と、第1の金属層26及び第2の金属層27からなる配線パターン14と、ソルダーレジスト16と、外部接続端子17とを有する。
図30は、本発明の第2の実施の形態に係る半導体装置を例示する断面図である。図30に示す半導体装置40において、図12に示す半導体装置10と同一構成部分には同一符号を付し、その説明を省略する場合がある。図30を参照するに、第2の実施の形態に係る半導体装置40は、第1の実施の形態に係る半導体装置10に設けられた配線パターン14の代わりに、配線パターン41を設けた以外は半導体装置10と同様に構成される。配線パターン41は、第1の金属層26と第3の金属層43とから構成されている。
図35は、本発明の第3の実施の形態に係る半導体装置を例示する断面図である。図35に示す半導体装置50において、図12に示す半導体装置10と同一構成部分には同一符号を付し、その説明を省略する場合がある。図35を参照するに、第3の実施の形態に係る半導体装置50は、第1の実施の形態に係る半導体装置10に設けられた絶縁層13の代わりに、絶縁層53を設けた以外は半導体装置10と同様に構成される。なお、53Aは、絶縁層53の上面を示している。以下、半導体装置10と異なる部分についてのみ説明する。
11,101 半導体チップ
12,102 内部接続端子
12A,13A,26A,27A,28A,29A,53A,102A,103A 上面
13,53,103 絶縁層
14,41,104 配線パターン
14A,41A,104A 外部接続端子配設領域
16,106 ソルダーレジスト
17,107 外部接続端子
21,31,109,110 半導体基板
22,111 半導体集積回路
23,112 電極パッド
24,113 保護膜
26 第1の金属層
27 第2の金属層
28,42 レジスト膜
29 第1の金属層26を構成するTi膜又はCr膜
30 第1の金属層26を構成するCu膜
42A 開口部
43 第3の金属層
51 第1絶縁層
52 第2絶縁層
A 半導体装置形成領域
B スクライブ領域
C 基板切断位置
T1〜T9 厚さ
H1 高さ
Claims (23)
- 電極パッドを有する半導体チップが形成される半導体基板と、前記電極パッドに設けられる内部接続端子と、前記複数の半導体チップと前記内部接続端子とを覆うように設けられる絶縁層と、前記絶縁層を挟んで前記内部接続端子と接続される配線パターンと、を有する半導体装置であって、
前記絶縁層は、ポリイミド及び/又はポリイミド系化合物等のα線を遮蔽する材料を含んで構成されることを特徴とする半導体装置。 - 前記絶縁層は無機フィラーを含有し、
前記無機フィラーの量は、前記絶縁層のα線検出量が0.0015count/cm2・h以下になるように調整されていることを特徴とする請求項1記載の半導体装置。 - 前記絶縁層は複数の層が積層された構造を有し、
前記複数の層のうちの少なくとも一層はポリイミド及び/又はポリイミド系化合物を含んで構成されることを特徴とする請求項1又は2記載の半導体装置。 - 前記複数の層のうちの前記半導体基板に最も近い層に含有されるポリイミド及び/又はポリイミド系化合物の量は、前記複数の層のうちの他の層に含有されるポリイミド及び/又はポリイミド系化合物の量よりも多いことを特徴とする請求項3記載の半導体装置。
- 前記複数の層のうちの前記半導体基板に最も近い層に含有される無機フィラーの量は、前記複数の層のうちの他の層に含有される無機フィラーの量よりも少ないことを特徴とする請求項3又は4記載の半導体装置。
- 前記複数の層のうちの前記半導体基板に最も近い層は無機フィラーを含有していないことを特徴とする請求項5記載の半導体装置。
- 前記絶縁層は、可視光線及び紫外線を遮蔽する材料を含んで構成されることを特徴とする請求項1乃至6の何れか一項記載の半導体装置。
- 前記可視光線及び紫外線を遮蔽する材料は、黒色系材料であることを特徴とする請求項7記載の半導体装置。
- 前記黒色系材料は、カーボンブラックであることを特徴とする請求項8記載の半導体装置。
- 前記黒色系材料は、有機顔料であることを特徴とする請求項8記載の半導体装置。
- 前記絶縁層に含有されるイオン性不純物であるCl−及びNa+の量は、それぞれ10ppm以下であることを特徴とする請求項1乃至10の何れか一項記載の半導体装置。
- 前記絶縁層に含有されるイオン性不純物であるNH4 +の量は、50ppm以下であることを特徴とする請求項1乃至11の何れか一項記載の半導体装置。
- 前記配線パターンは、チタン膜と銅膜とが積層された構成を含むことを特徴とする請求項1乃至12の何れか一項記載の半導体装置。
- 前記チタン膜は、前記銅膜及び前記内部接続端子と金属接合していることを特徴とする請求項13記載の半導体装置。
- 前記絶縁層の表面が粗面化されていることを特徴とする請求項1乃至14の何れか一項記載の半導体装置。
- 前記絶縁層上には、前記配線パターンを覆うようにソルダーレジスト層が形成されており、
前記ソルダーレジスト層は無機フィラーを含有していないことを特徴とする請求項1乃至15の何れか一項記載の半導体装置。 - 前記ソルダーレジスト層は前記配線パターンを露出する開口部を有し、
前記開口部内に露出する前記配線パターン上には外部接続端子が形成されており、
前記外部接続端子の材料はPbを含有していないことを特徴とする請求項1乃至16の何れか一項記載の半導体装置。 - 電極パッドを有する複数の半導体チップが形成された半導体基板の前記電極パッド上に、内部接続端子を形成する第1の工程と、
前記内部接続端子を覆うようにα線を遮蔽する材料を含んで構成される絶縁層を形成する第2の工程と、
前記内部接続端子の一部を前記絶縁層の上面に露出させると共に前記絶縁層の表面を粗面化する第3の工程と、
前記絶縁層の上面及び前記内部接続端子の露出した部分に導電層を形成する第4の工程と、
前記導電層上に配線層を形成する第5の工程と、
前記導電層及び前記配線層をパターニングして前記内部接続端子に接続する配線パターンを形成する第6の工程と、を有する半導体装置の製造方法。 - 前記第3の工程において、プラズマアッシングにより前記内部接続端子の一部を前記絶縁層の上面に露出させると共に前記絶縁層の表面を粗面化することを特徴とする請求項18記載の半導体装置の製造方法。
- 前記第4の工程において、前記導電層は、前記絶縁層の上面及び前記内部接続端子の露出した部分に、蒸着法を用いてチタン膜及び銅膜をこの順序で積層することにより形成されることを特徴とする請求項18又は19記載の半導体装置の製造方法。
- 前記第4の工程における前記蒸着法は物理蒸着法であることを特徴とする請求項20記載の半導体装置の製造方法。
- 前記第5の工程において、前記配線層は、前記導電層を給電層とした電解めっき法により形成されることを特徴とする請求項18乃至21の何れか一項記載の半導体装置の製造方法。
- 前記第1の工程において、前記内部接続端子は、ボンディングワイヤにより形成されることを特徴とする請求項18乃至22の何れか一項記載の半導体装置の製造方法。
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