JP2010073908A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2010073908A
JP2010073908A JP2008240194A JP2008240194A JP2010073908A JP 2010073908 A JP2010073908 A JP 2010073908A JP 2008240194 A JP2008240194 A JP 2008240194A JP 2008240194 A JP2008240194 A JP 2008240194A JP 2010073908 A JP2010073908 A JP 2010073908A
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Japan
Prior art keywords
layer
semiconductor device
connection
semiconductor element
alloy
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Pending
Application number
JP2008240194A
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English (en)
Japanese (ja)
Other versions
JP2010073908A5 (enExample
Inventor
Yasushi Ikeda
靖 池田
Satoshi Matsuyoshi
松吉　　聡
Shinji Hiramitsu
真二 平光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP2008240194A priority Critical patent/JP2010073908A/ja
Publication of JP2010073908A publication Critical patent/JP2010073908A/ja
Publication of JP2010073908A5 publication Critical patent/JP2010073908A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/831—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus
    • H01L2224/83101—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector the layer connector being supplied to the parts to be connected in the bonding apparatus as prepeg comprising a layer connector, e.g. provided in an insulating plate member
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01327—Intermediate phases, i.e. intermetallics compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Die Bonding (AREA)
JP2008240194A 2008-09-19 2008-09-19 半導体装置およびその製造方法 Pending JP2010073908A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008240194A JP2010073908A (ja) 2008-09-19 2008-09-19 半導体装置およびその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008240194A JP2010073908A (ja) 2008-09-19 2008-09-19 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2010073908A true JP2010073908A (ja) 2010-04-02
JP2010073908A5 JP2010073908A5 (enExample) 2011-05-06

Family

ID=42205422

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008240194A Pending JP2010073908A (ja) 2008-09-19 2008-09-19 半導体装置およびその製造方法

Country Status (1)

Country Link
JP (1) JP2010073908A (enExample)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238838A (ja) * 2010-05-12 2011-11-24 Hitachi Cable Ltd 接合材料およびその製造方法、半導体装置およびその製造方法
JP2012209402A (ja) * 2011-03-29 2012-10-25 Hitachi Cable Ltd リード部品及びその製造方法、並びに半導体パッケージ
JP2013243246A (ja) * 2012-05-21 2013-12-05 Panasonic Corp 半導体素子の接合構造体と製造方法
US9393645B2 (en) 2010-08-31 2016-07-19 Hitachi Metals, Ltd. Junction material, manufacturing method thereof, and manufacturing method of junction structure
JP2016219479A (ja) * 2015-05-15 2016-12-22 トヨタ自動車株式会社 半導体装置の製造方法及び半導体装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008126272A (ja) * 2006-11-21 2008-06-05 Hitachi Ltd 接続材料、接続材料の製造方法、および半導体装置

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008126272A (ja) * 2006-11-21 2008-06-05 Hitachi Ltd 接続材料、接続材料の製造方法、および半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011238838A (ja) * 2010-05-12 2011-11-24 Hitachi Cable Ltd 接合材料およびその製造方法、半導体装置およびその製造方法
US9393645B2 (en) 2010-08-31 2016-07-19 Hitachi Metals, Ltd. Junction material, manufacturing method thereof, and manufacturing method of junction structure
JP2012209402A (ja) * 2011-03-29 2012-10-25 Hitachi Cable Ltd リード部品及びその製造方法、並びに半導体パッケージ
JP2013243246A (ja) * 2012-05-21 2013-12-05 Panasonic Corp 半導体素子の接合構造体と製造方法
JP2016219479A (ja) * 2015-05-15 2016-12-22 トヨタ自動車株式会社 半導体装置の製造方法及び半導体装置

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