JP2010050423A - 組成物およびそれを用いた有機光電変換素子 - Google Patents
組成物およびそれを用いた有機光電変換素子 Download PDFInfo
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- JP2010050423A JP2010050423A JP2008242188A JP2008242188A JP2010050423A JP 2010050423 A JP2010050423 A JP 2010050423A JP 2008242188 A JP2008242188 A JP 2008242188A JP 2008242188 A JP2008242188 A JP 2008242188A JP 2010050423 A JP2010050423 A JP 2010050423A
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- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- SNAAJJQQZSMGQD-UHFFFAOYSA-N aluminum magnesium Chemical compound [Mg].[Al] SNAAJJQQZSMGQD-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 238000000065 atmospheric pressure chemical ionisation Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- AQNQQHJNRPDOQV-UHFFFAOYSA-N bromocyclohexane Chemical compound BrC1CCCCC1 AQNQQHJNRPDOQV-UHFFFAOYSA-N 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- TVFDJXOCXUVLDH-UHFFFAOYSA-N caesium atom Chemical compound [Cs] TVFDJXOCXUVLDH-UHFFFAOYSA-N 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 150000008280 chlorinated hydrocarbons Chemical class 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229920001940 conductive polymer Polymers 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- WVIIMZNLDWSIRH-UHFFFAOYSA-N cyclohexylcyclohexane Chemical group C1CCCCC1C1CCCCC1 WVIIMZNLDWSIRH-UHFFFAOYSA-N 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 1
- 239000004210 ether based solvent Substances 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910003472 fullerene Inorganic materials 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- YCOZIPAWZNQLMR-UHFFFAOYSA-N heptane - octane Natural products CCCCCCCCCCCCCCC YCOZIPAWZNQLMR-UHFFFAOYSA-N 0.000 description 1
- 238000004770 highest occupied molecular orbital Methods 0.000 description 1
- LHJOPRPDWDXEIY-UHFFFAOYSA-N indium lithium Chemical compound [Li].[In] LHJOPRPDWDXEIY-UHFFFAOYSA-N 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- YZASAXHKAQYPEH-UHFFFAOYSA-N indium silver Chemical compound [Ag].[In] YZASAXHKAQYPEH-UHFFFAOYSA-N 0.000 description 1
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 1
- 238000009830 intercalation Methods 0.000 description 1
- 230000002687 intercalation Effects 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GCICAPWZNUIIDV-UHFFFAOYSA-N lithium magnesium Chemical compound [Li].[Mg] GCICAPWZNUIIDV-UHFFFAOYSA-N 0.000 description 1
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- XKBGEWXEAPTVCK-UHFFFAOYSA-M methyltrioctylammonium chloride Chemical compound [Cl-].CCCCCCCC[N+](C)(CCCCCCCC)CCCCCCCC XKBGEWXEAPTVCK-UHFFFAOYSA-M 0.000 description 1
- UNFUYWDGSFDHCW-UHFFFAOYSA-N monochlorocyclohexane Chemical compound ClC1CCCCC1 UNFUYWDGSFDHCW-UHFFFAOYSA-N 0.000 description 1
- 229940094933 n-dodecane Drugs 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 1
- 229920000548 poly(silane) polymer Polymers 0.000 description 1
- 229920002098 polyfluorene Polymers 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000128 polypyrrole Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
- 238000001226 reprecipitation Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- WWGXHTXOZKVJDN-UHFFFAOYSA-M sodium;n,n-diethylcarbamodithioate;trihydrate Chemical compound O.O.O.[Na+].CCN(CC)C([S-])=S WWGXHTXOZKVJDN-UHFFFAOYSA-M 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- BDZBKCUKTQZUTL-UHFFFAOYSA-N triethyl phosphite Chemical compound CCOP(OCC)OCC BDZBKCUKTQZUTL-UHFFFAOYSA-N 0.000 description 1
- RXJKFRMDXUJTEX-UHFFFAOYSA-N triethylphosphine Chemical compound CCP(CC)CC RXJKFRMDXUJTEX-UHFFFAOYSA-N 0.000 description 1
- CYTQBVOFDCPGCX-UHFFFAOYSA-N trimethyl phosphite Chemical compound COP(OC)OC CYTQBVOFDCPGCX-UHFFFAOYSA-N 0.000 description 1
- KCTAHLRCZMOTKM-UHFFFAOYSA-N tripropylphosphane Chemical compound CCCP(CCC)CCC KCTAHLRCZMOTKM-UHFFFAOYSA-N 0.000 description 1
- CCXTYQMZVYIQRP-UHFFFAOYSA-N tris(3-methoxyphenyl)phosphane Chemical compound COC1=CC=CC(P(C=2C=C(OC)C=CC=2)C=2C=C(OC)C=CC=2)=C1 CCXTYQMZVYIQRP-UHFFFAOYSA-N 0.000 description 1
- UYUUAUOYLFIRJG-UHFFFAOYSA-N tris(4-methoxyphenyl)phosphane Chemical compound C1=CC(OC)=CC=C1P(C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 UYUUAUOYLFIRJG-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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Abstract
【解決手段】フラーレン誘導体と還元剤を反応させることにより得られる組成物。フラーレン誘導体と溶媒とを含む組成物に還元剤を添加し、該フラーレン誘導体と該還元剤を反応させることにより得られることが好ましい。還元剤は、3価のリン化合物であることが好ましい。3価のリン化合物としては、トリアリールホスフィン、トリアルキルホスフィン、トリアルコキシホスフィンなどが挙げられる。該組成物を用いて形成した有機層を有する有機光電変換素子は、光電変換効率が優れる。
【選択図】なし
Description
本発明の有機光電変換素子は、少なくとも一方が透明又は半透明である一対の電極と、該電極間に本発明の組成物を用いて形成した有機層を有する。
1.少なくとも一方が透明又は半透明である一対の電極と、該電極間に設けられ電子受容性化合物としてフラーレン誘導体を含有する第一の有機層と、該第一の有機層に隣接して設けられた電子供与性化合物を含有する第二の有機層とを有する有機光電変換素子であることを特徴とするもの、
2.少なくとも一方が透明又は半透明である一対の電極と、該電極間に設けられ電子受容性化合物としてフラーレン誘導体および電子供与性化合物を含有する有機層を少なくとも一層有する有機光電変換素子であることを特徴とするもの、
のいずれかが好ましい。
本発明の組成物を用いて有機層を形成する際、還元剤を除去してから有機層を製造することが好ましい。還元剤を除去する方法としては、カラムを用いて除去する方法、再沈によりフラーレン誘導体のみを取り出す方法等が挙げられる。
(高分子化合物1の合成)
アルゴン置換した2L四つ口フラスコに化合物(A)(7.928g、16.72mmol)、化合物(B)(13.00g、17.60mmol)、メチルトリオクチルアンモニウムクロライド(商品名:「aliquat336」(登録商標)、Aldrich社製、CH3N[(CH2)7CH3]3Cl、density 0.884g/ml,25℃)(4.979g)、およびトルエン405mlを入れ、撹拌しながら系内を30分間アルゴンバブリングした。ジクロロビス(トリフェニルホスフィン)パラジウム(II)(0.02g)を加え、105℃に昇温、撹拌しながら2mol/Lの炭酸ナトリウム水溶液42.2mlを滴下した。滴下終了後5時間反応させ、フェニルボロン酸(2.6g)とトルエン1.8mlを加えて105℃で16時間撹拌した。トルエン700mlおよび7.5%ジエチルジチオカルバミン酸ナトリウム三水和物水溶液200mlを加えて85℃で3時間撹拌した。水層を除去後、60℃のイオン交換水300mlで2回、60℃の3%酢酸300mlで1回、さらに60℃のイオン交換水300mlで3回洗浄した。有機層をセライト、アルミナ、シリカを充填したカラムに通し、熱トルエン800mlでカラムを洗浄した。溶液を700mlまで濃縮した後、2Lのメタノールに注加、再沈殿させた。重合体をろ過して回収し、500mlのメタノール、アセトン、メタノールで洗浄した。50℃で一晩真空乾燥することにより、下記式:
で表されるペンタチエニル−フルオレンコポリマー(以下、「高分子化合物1」という) 12.21gを得た。高分子化合物1のポリスチレン換算の数平均分子量は5.4×104、重量平均分子量は1.1×105であった。
(化合物Cの合成)
窒素雰囲気下、100mlナスフラスコにピリジン0.5mlとヒドラゾン化合物1 0.27g(0.72mmol)を仕込み、室温にてメカニカルスターラーにて攪拌、溶解させた。そこへナトリウムメトキシド(0.05g、0.93mmol)を加え、さらに15分間撹拌した。そこへC70 0.3g(0.36mmol)を1、2-ジクロロベンゼン50mlに溶解した溶液を一気に加え、70℃にて24時間加熱撹拌した。その後、室温まで冷却した反応液をシリカゲルクロマトグラフィー(WakosilC-300、300g使用、展開液トルエン)にて精製し、精製後の溶液を100mlまで減圧濃縮後、12時間加熱還流した。反応液を冷却後、反応液を再度シリカゲルカラムクロマトグラフィー(WakosilC-300、300g使用、展開液トルエン)にて精製し、精製後の溶液を50mlまで減圧濃縮後、メタノール100mlを加え生成した沈殿物をろ取し、ヘキサン20mlで2回およびジエチルエーテル20mlで2回洗浄後、50torr、80℃にて5時間減圧乾燥することで[70]PCBM 2 を得た(0.08g、収率18.3%)。これを化合物Cと呼ぶ。化合物CをHPLC(LC−10A(島津製作所製)、使用カラム:L-Column ODS((財)化学物質評価研究機構製4.6mm×25cm、膜圧3μm)、検出波長:370nm、流量:1ml/min、グラジェント法(A液:50mM 酢酸アンモニウム/メタノール、B液:トルエン、B液20%−40min−60%))にて分析したところ、目的物である[70]PCBMの純度は93.6%(クロマトグラムの各ピークの面積の合計に対する目的とする成分のピークの面積(面百値)、3種類の異性体の合計値)で、5.39%(面百値)の不純物が検出された。
(組成物1の製造)
(化合物D(酸化体を減少させた[70]PCBMの合成))
窒素雰囲気下、50mlナスフラスコに上記合成例2で合成されたフラーレン誘導体である化合物C 0.07g(0.06mmol)と溶媒であるメシチレン20mlを仕込み、さらにトリフェニルホスフィン0.07g(0.27mmol)を加え、窒素気流下150℃にて12時間加熱撹拌した。反応液を冷却後、反応液をシリカゲルカラムクロマトグラフィー(WakosilC-300、100g使用、展開液トルエン)にて精製し、組成物1を製造した。組成物1を10mlまで減圧濃縮後、メタノール10mlを加え生成した沈殿物をろ取し、トリフェニルホスフィンを除去した。その後、ヘキサン10mlで2回およびジエチルエーテル10mlで2回洗浄後50torr、80℃にて5時間減圧乾燥することで[70]PCBMを得た(0.06g、収率85.7%)。これを化合物Dと呼ぶ。これを上記合成例2に記載したHPLC条件にて分析したところ、目的物である[70]PCBMの純度は98.9%(面百値、3異性体合計)で、不純物の含有量が0.58%(面百値)まで減少した。
化合物Eの合成
窒素雰囲気下、100mlナスフラスコにピリジン0.5mlとヒドラゾン化合物1 0.27g(0.72mmol)を仕込み、室温にてメカニカルスターラーにて攪拌、溶解させた。そこへナトリウムメトキシド ( 0.05 g、0.93mmol)を加え、さらに15分間撹拌した。そこへC70 0.3g(0.36mmol)を1,2-ジクロロベンゼン50mlに溶解した溶液を一気に加え.70℃にて24時間加熱撹拌した。過熱後、室温まで冷却した反応液をシリカゲルクロマトグラフィー(WakosilC-300、300g使用、展開液トルエン)にて精製し、精製後の溶液を100mlまで減圧濃縮後 12時間加熱還流した。反応液を冷却後、反応液を再度シリカゲルカラムクロマトグラフィー(WakosilC-300、300g使用、展開液トルエン)にて精製し、精製後の溶液を50mlまで減圧濃縮後、メタノール100mlを加え生成した沈殿物をろ取し、ヘキサン20mlで2回およびジエチルエーテル20mlで2回洗浄後50torr、80℃にて5時間減圧乾燥することで[70]PCBM 2 を得た(0.12g、収率16.1%)。これを化合物Eと呼ぶ。これをHPLC(使用カラム:L-Column ODS((財)化学物質評価研究機構製4.6mm×25cm、膜圧3μm)、検出波長:370nm、流量:1ml/min、グラジェント法(A液:50mM 酢酸アンモニウム/メタノール、B液:トルエン、B液20%−40min−60%))にて分析したところ、目的物である[70]PCBMの純度は97.1%(面百値、3異性体合計)で、2.69%(面百値)の不純物と推定される成分が検出された。
(組成物2の製造)
(化合物F(酸化体を減少させた[70]PCBMの合成))
窒素雰囲気下、50mlナスフラスコに上記合成例で合成された化合物E 0.10g(0.10mmol)と1、2、4−トリメチルベンゼン20mlを仕込み、さらにトリブチルホスフィン0.04g(0.20mmol)を加え、窒素気流下室温にて4時間撹拌した。反応液を冷却後、反応液をシリカゲルカラムクロマトグラフィー(WakosilC-300、200g使用、展開液トルエン)にて精製し、組成物2を得た。組成物2を10mlまで減圧濃縮後、メタノール10mlを加え生成した沈殿物をろ取し、トリブチルホスフィンを除去した。ヘキサン10mlで2回およびジエチルエーテル10mlで2回洗浄後50torr、80℃にて5時間減圧乾燥することでC70PCBMを得た(0.09g、収率90.0%)。これを化合物Fと呼ぶ。これを上記合成例3に記載したHPLC条件にて分析したところ、目的物である[70]PCBMの純度は99.8%(面百値、3異性体合計)で、不純物と推定される成分は検出されなかった。
(有機薄膜太陽電池の作製、評価)
電子供与体として高分子化合物1を0.5%(重量%)の濃度でo−ジクロロベンゼンに溶解させた。その後、電子受容体として化合物Dを電子供与体の重量に対して3倍の重量で溶液に混合した。ついで、孔径0.2μmのテフロン(登録商標)フィルターを用いて溶液を濾過し、塗布溶液を作製した。
(有機薄膜太陽電池の作製、評価)
化合物Dにかえて化合物Fを用いた以外は、実施例3と同様に光電変換素子を作製し、光電変換効率を求めた。測定結果を表1に示す。
(有機薄膜太陽電池の作製、評価)
化合物Dにかえて化合物Cを用いた以外は、実施例3と同様に光電変換素子を作製し、光電変換効率を求めた。測定結果を表1に示す。
(組成物3の製造)
(化合物G(酸化体を減少させた[60]PCBMの合成))
[60]PCBM(C60フラーレンの[6,6]フェニル−酪酸メチルエステル誘導体)(フロンティアカーボン製E100:ロット番号8A0125−A)を、上記合成例3に記載したHPLC条件にて分析したところ、目的物である[60]PCBMの純度は99.0%で、不純物と推定される成分が0.37%(面百値)含まれていた。不純物と推定される成分のうち、0.04%(面百値)は[60]PCBMの酸化物であった。
窒素雰囲気下、100mlナスフラスコに[60]PCBM(フロンティアカーボン製E100:ロット番号8A0125−A)0.42g(0.46mmol)と1、2、4−トリメチルベンゼン80mlを仕込み、さらにトリブチルホスフィン0.19g(0.92mmol)を加え、窒素気流下室温にて4hr撹拌した。反応液を冷却後、反応液をシリカゲルカラムクロマトグラフィー(WakosilC-300、300g使用、展開液トルエン)にて精製し、取得した画分を30mlまで減圧濃縮後、メタノール20mlを加え生成した沈殿物をろ取し、ヘキサン20mlで2回およびジエチルエーテル20mlで2回洗浄後50torr、80℃にて5時間減圧乾燥することで化合物Gを得た(0.34 g、収率81.0%)。これを上記合成例3に記載したHPLC条件にて分析したところ、目的物である化合物Gの純度は99.3%で、不純物と推定される成分は検出されなかった。
(有機薄膜太陽電池の作製、評価)
化合物Dにかえて化合物Gを用いた以外は、実施例3と同様に光電変換素子を作製し、光電変換効率を求めた。測定結果を表1に示す。
(有機薄膜太陽電池の作製、評価)
化合物Dにかえて[60]PCBM(フロンティアカーボン製E100:ロット番号8A0125−A)を用いた以外は、実施例3と同様に光電変換素子を作製し、光電変換効率を求めた。測定結果を表1に示す。
表1からわかるように、フラーレン誘導体と溶媒とを含む組成物に還元剤を添加し、該フラーレン誘導体と該還元剤を反応後、該還元剤を除去することにより得られる組成物を用いて作製した有機光電変換素子は、該組成物を用いずに作製した有機光電変換素子よりも高い光電変換効率を示した。
Claims (4)
- フラーレン誘導体と還元剤を反応させることにより得られる組成物。
- フラーレン誘導体と溶媒とを含む組成物に還元剤を添加し、該フラーレン誘導体と該還元剤を反応させることにより得られる請求項1に記載の組成物。
- 還元剤が3価のリン化合物である請求項1又は2に記載の組成物。
- 請求項1〜3のいずれかに記載の組成物を用いて形成した有機層を有する有機光電変換素子。
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