JP2010028639A - 圧電部品及びその製造方法 - Google Patents
圧電部品及びその製造方法 Download PDFInfo
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- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/0504—Holders; Supports for bulk acoustic wave devices
- H03H9/0514—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps
- H03H9/0523—Holders; Supports for bulk acoustic wave devices consisting of mounting pads or bumps for flip-chip mounting
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/058—Holders; Supports for surface acoustic wave devices
- H03H9/059—Holders; Supports for surface acoustic wave devices consisting of mounting pads or bumps
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- H03H9/02—Details
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- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1042—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a housing formed by a cavity in a resin
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
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- H03H9/10—Mounting in enclosures
- H03H9/1064—Mounting in enclosures for surface acoustic wave [SAW] devices
- H03H9/1085—Mounting in enclosures for surface acoustic wave [SAW] devices the enclosure being defined by a non-uniform sealing mass covering the non-active sides of the BAW device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16135—Disposition the bump connector connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/4913—Assembling to base an electrical component, e.g., capacitor, etc.
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/49002—Electrical device making
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- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49147—Assembling terminal to base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
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- Y10T29/49002—Electrical device making
- Y10T29/49117—Conductor or circuit manufacturing
- Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
- Y10T29/49155—Manufacturing circuit on or in base
- Y10T29/49165—Manufacturing circuit on or in base by forming conductive walled aperture in base
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49789—Obtaining plural product pieces from unitary workpiece
- Y10T29/49798—Dividing sequentially from leading end, e.g., by cutting or breaking
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
【解決手段】 本発明は、圧電基板2と、該圧電基板2の主面2aに形成された櫛歯電極7と該櫛歯電極に隣接して配設された素子配線を有する配線電極8とからなる第1圧電素子と、前記圧電基板2に形成された端子電極9と、該端子電極9に接触するはんだ電極11と、櫛歯電極7a及び配線電極8aとを主面に有する複数の第2圧電素子4,5とからなり、該第2圧電素子4,5が前記第1圧電素子と前記第2圧電素子の主面とが対向して両主面間に中空部Cが形成されるように、感光性樹脂シートからなる樹脂封止層3により封止され、かつ、該樹脂封止層3を貫通して前記端子電極9とその上端部が接触する貫通電極6と、からなることを特徴とする圧電部品及びその製造方法に関する。
【選択図】 図1
Description
図1は、本発明の圧電部品の実施例であるSAWデバイスを示す。
次に、本発明の圧電部品の製造方法を、その実施例であるSAWデバイスの製造方法について説明する。
2 圧電基板(ウェハ)
3 封止樹脂
4 第2圧電素子(SAW素子)
5 第2圧電素子(SAW素子)
6 貫通電極
6a 貫通孔(ビアホール)
7 櫛歯(IDT)電極
8 配線電極
9 端子電極
10 はんだ電極
11 はんだ電極(バンプ)
C 中空部
Claims (15)
- 圧電基板と、該圧電基板の主面に形成された櫛歯電極と該櫛歯電極に隣接して配設された素子配線を有する配線電極とからなる第1圧電素子と、前記圧電基板に形成された端子電極と、該端子電極に接触するはんだ電極、櫛歯電極及び配線電極とを主面に有する複数の第2圧電素子とからなり、該第2圧電素子が、前記第1圧電素子と前記第2圧電素子の主面とが対向して両主面間に中空部が形成されるように感光性樹脂シートからなる樹脂封止層により封止され、かつ、該樹脂封止層を貫通して前記端子電極とその上端部が接触する貫通電極と、からなることを特徴とする圧電部品。
- 前記端子電極が、金ボールボンディングあるいはメッキにより形成された金バンプであって、かつ、前記圧電基板への前記圧電素子の実装が超音波熱圧着あるいは加熱圧着によるフリップチップ実装の方法によりなされることを特徴とする請求項1に記載の圧電部品。
- 前記貫通電極の下端部に、はんだ電極が形成されていることを特徴とする請求項1に記載の圧電部品。
- 前記圧電素子が、弾性表面波素子であることを特徴とする請求項1に記載の圧電部品。
- 前記圧電素子が、FBARであることを特徴とする請求項1に記載の圧電部品。
- 前記圧電素子が、MEMSであることを特徴とする請求項1に記載の圧電部品。
- 前記素子配線が、Al、Cu、Au、Cr、Ru、Ni、Ti、W、V、Ta、Mo、Ag、In、Snのうちのいずれか一つを主成分とする材料、あるいはこれらの材料を混合し、多層化した配線であることを特徴とする請求項1に記載の圧電部品。
- 前記圧電基板が、LiTaO3、LiNbO3あるいは水晶等の圧電基板、もしくは前記圧電基板上に形成した圧電機能部を有する圧電基板であることを特徴とする請求項1に記載の圧電部品。
- 前記圧電基板と前記第2圧電素子とが、同一材料からなることを特徴とする請求項1に記載の圧電部品。
- 前記圧電基板または圧電基板の主面側、前記貫通電極、再配線層、あるいは絶縁層を用い、さらに前記圧電基板の裏面側に配線を形成して、分布定数(浮遊容量、配線長)を用いて回路を形成し、インピーダンスのマッチングまたは位相のシフト、あるいは前記圧電基板の前記櫛歯電極と組合わせて共振回路を形成したことを特徴とする請求項1に記載の圧電部品。
- 前記封止樹脂層の下面にインピーダンス回路及び端子電極が設けられていることを特徴とする請求項1に記載の圧電部品。
- 圧電基板母材の主面に櫛歯電極及び配線電極とからなる複数組の第1圧電素子を形成する工程と、
該第1圧電素子の表面に保護膜を形成する工程と、
前記主面に端子電極形成用のシード層を形成する工程と、
該シード層上にCu電解メッキにより端子電極を形成する工程と、
前記シード層をエッチングにより除去する工程と、
別の圧電基板を用意し、該別の圧電基板の主面に櫛歯電極及び配線電極とからなる複数組の第2圧電素子を形成し、該主面に前記櫛歯電極及び配線電極に隣接してはんだ電極を形成した後、ダイシングにより切断して個片の第2圧電素子を得る工程と、
前記第2圧電素子の個片を前記圧電基板母材の主面に前記はんだ電極を前記圧電基板母材の主面の設けた前記端子電極に接触するようフェースダウンで搭載する工程と、
リフローにより前記はんだ電極と前記端子電極とを接続する工程と、
感光性樹脂フィルムを所定の軟化温度に加熱し、あるいは溶融させながら前記圧電基板母材の主面側にラミネートして、前記櫛歯電極及び配線電極の周囲に気密な中空部が形成するように樹脂封止する工程と、
樹脂封止した前記感光性樹脂フィルムの上面の所定部位をフォトリソグラフィにより露光・現像して除去して貫通電極形成用の貫通孔を封止樹脂層に形成する工程と、
前記端子電極上にCuメッキにより前記貫通孔を埋めて貫通電極を形成する工程と、及び
ダイシングにより、ダイシングラインに沿って前記圧電基板母材を切断して、圧電部品の個片を得る工程と、からなることを特徴とする圧電部品の製造方法。 - 前記貫通電極の下端に、はんだ電極を形成する工程とからなることを特徴とする請求項12に記載の圧電部品の製造方法。
- 前記はんだ電極と前記端子電極とをリフローで接続する工程が、ギ酸あるいは水素の還元雰囲気中、窒素の不活性ガス雰囲気中もしくは真空中で行われることを特徴とする請求項12に記載の圧電部品の製造方法。
- 前記貫通孔の形成が、エキシマレーザ、ドライエッチングあるいはウエットエッチングとの組合せによりなされることを特徴とする請求項12に記載の圧電部品の製造方法。
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JP2008189771A JP4689704B2 (ja) | 2008-07-23 | 2008-07-23 | 圧電部品及びその製造方法 |
US12/459,370 US8230563B2 (en) | 2008-07-23 | 2009-06-30 | Method of manufacturing a piezoelectric component |
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JP2008189771A JP4689704B2 (ja) | 2008-07-23 | 2008-07-23 | 圧電部品及びその製造方法 |
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JP2010028639A true JP2010028639A (ja) | 2010-02-04 |
JP4689704B2 JP4689704B2 (ja) | 2011-05-25 |
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JP2008189771A Expired - Fee Related JP4689704B2 (ja) | 2008-07-23 | 2008-07-23 | 圧電部品及びその製造方法 |
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Cited By (3)
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JP2013153289A (ja) * | 2012-01-24 | 2013-08-08 | Taiyo Yuden Co Ltd | 弾性波デバイス及び弾性波デバイスの製造方法 |
US9397057B2 (en) | 2014-06-02 | 2016-07-19 | Kabushiki Kaisha Toshiba | Plurality of semiconductor devices in resin with a via |
KR20200058215A (ko) * | 2018-11-19 | 2020-05-27 | 전북대학교산학협력단 | 가변 공진 특성을 갖는 체적탄성파 공진기 및 그 방법 |
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WO2008081935A1 (ja) * | 2006-12-28 | 2008-07-10 | Kyocera Corporation | 弾性表面波装置およびその製造方法 |
KR101936232B1 (ko) | 2012-05-24 | 2019-01-08 | 삼성전자주식회사 | 전기적 연결 구조 및 그 제조방법 |
CN104284550A (zh) * | 2013-07-09 | 2015-01-14 | 三星电机株式会社 | 高频模块及其制造方法 |
US20150179557A1 (en) * | 2013-12-21 | 2015-06-25 | International Business Machines Corporation | Semiconductor chips having heat conductive layer with vias |
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JP6444787B2 (ja) * | 2015-03-23 | 2018-12-26 | 太陽誘電株式会社 | 弾性波デバイスおよびその製造方法 |
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JP7252770B2 (ja) | 2019-02-01 | 2023-04-05 | 太陽誘電株式会社 | 高周波デバイスおよびマルチプレクサ |
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2013153289A (ja) * | 2012-01-24 | 2013-08-08 | Taiyo Yuden Co Ltd | 弾性波デバイス及び弾性波デバイスの製造方法 |
US9484883B2 (en) | 2012-01-24 | 2016-11-01 | Taiyo Yuden Co., Ltd. | Acoustic wave device and fabrication method of the same |
US9397057B2 (en) | 2014-06-02 | 2016-07-19 | Kabushiki Kaisha Toshiba | Plurality of semiconductor devices in resin with a via |
KR20200058215A (ko) * | 2018-11-19 | 2020-05-27 | 전북대학교산학협력단 | 가변 공진 특성을 갖는 체적탄성파 공진기 및 그 방법 |
KR102142056B1 (ko) * | 2018-11-19 | 2020-08-06 | 전북대학교산학협력단 | 가변 공진 특성을 갖는 체적탄성파 공진기 및 그 방법 |
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US20100019867A1 (en) | 2010-01-28 |
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