JP2010016406A5 - - Google Patents

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Publication number
JP2010016406A5
JP2010016406A5 JP2009238098A JP2009238098A JP2010016406A5 JP 2010016406 A5 JP2010016406 A5 JP 2010016406A5 JP 2009238098 A JP2009238098 A JP 2009238098A JP 2009238098 A JP2009238098 A JP 2009238098A JP 2010016406 A5 JP2010016406 A5 JP 2010016406A5
Authority
JP
Japan
Prior art keywords
layer
laser device
semiconductor laser
silicon layer
ridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009238098A
Other languages
English (en)
Japanese (ja)
Other versions
JP2010016406A (ja
Filing date
Publication date
Priority claimed from US09/002,151 external-priority patent/US6141365A/en
Application filed filed Critical
Publication of JP2010016406A publication Critical patent/JP2010016406A/ja
Publication of JP2010016406A5 publication Critical patent/JP2010016406A5/ja
Pending legal-status Critical Current

Links

JP2009238098A 1997-12-31 2009-10-15 キンク抑制層を備えた半導体レーザー Pending JP2010016406A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/002,151 US6141365A (en) 1997-12-31 1997-12-31 Semiconductor laser with kink suppression layer

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2000527008A Division JP2002500447A (ja) 1997-12-31 1998-12-18 キンク抑制層を備えた半導体レーザー

Publications (2)

Publication Number Publication Date
JP2010016406A JP2010016406A (ja) 2010-01-21
JP2010016406A5 true JP2010016406A5 (enExample) 2010-03-04

Family

ID=21699452

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000527008A Withdrawn JP2002500447A (ja) 1997-12-31 1998-12-18 キンク抑制層を備えた半導体レーザー
JP2009238098A Pending JP2010016406A (ja) 1997-12-31 2009-10-15 キンク抑制層を備えた半導体レーザー

Family Applications Before (1)

Application Number Title Priority Date Filing Date
JP2000527008A Withdrawn JP2002500447A (ja) 1997-12-31 1998-12-18 キンク抑制層を備えた半導体レーザー

Country Status (10)

Country Link
US (2) US6141365A (enExample)
EP (1) EP1042848B1 (enExample)
JP (2) JP2002500447A (enExample)
KR (1) KR20010033814A (enExample)
CN (1) CN1285969A (enExample)
AT (1) ATE233966T1 (enExample)
AU (1) AU742001B2 (enExample)
CA (1) CA2316830A1 (enExample)
DE (1) DE69811952T2 (enExample)
WO (1) WO1999034488A1 (enExample)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
US6358862B1 (en) 1999-09-02 2002-03-19 Micron Technology, Inc Passivation integrity improvements
US6499888B1 (en) 1999-12-20 2002-12-31 Corning Lasertron, Inc. Wide ridge pump laser
AU4718101A (en) * 1999-12-20 2001-07-03 Corning Lasertron, Inc. Wide ridge pump laser
US6375364B1 (en) * 2000-01-06 2002-04-23 Corning Lasertron, Inc. Back facet flared ridge for pump laser
JP2002299763A (ja) * 2001-04-03 2002-10-11 Sony Corp 半導体レーザ素子及びその作製方法
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
JP2003347674A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
KR100493638B1 (ko) * 2002-09-06 2005-06-03 엘지전자 주식회사 질화물 반도체 레이저 다이오드
US6862300B1 (en) * 2002-09-17 2005-03-01 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
US6940877B2 (en) * 2003-05-30 2005-09-06 Np Photonics, Inc. High-power narrow-linewidth single-frequency laser
KR100495220B1 (ko) * 2003-06-25 2005-06-14 삼성전기주식회사 고차모드 흡수층을 갖는 반도체 레이저 다이오드
DE10353960B4 (de) * 2003-10-16 2006-03-23 Vertilas Gmbh Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter
JP2005217255A (ja) * 2004-01-30 2005-08-11 Sharp Corp 半導体レーザおよびその製造方法
DE102004036963A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
US7856037B2 (en) * 2007-03-16 2010-12-21 Oclaro (North America), Inc. System of method for dynamic range extension
JP4754020B2 (ja) * 2007-07-27 2011-08-24 三菱電機株式会社 平面導波路型レーザ装置
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
JP2011243939A (ja) * 2010-01-20 2011-12-01 Panasonic Corp 窒化物半導体レーザ装置
DE102011075502A1 (de) 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
GB201220460D0 (en) * 2012-11-14 2012-12-26 Univ Dundee Ultrafast semiconductor lasers as optical pump sources in terahertz systems
US11728620B2 (en) * 2017-12-27 2023-08-15 Princeton Optronics, Inc. Semiconductor devices and methods for producing the same
DE102018123019A1 (de) * 2018-09-19 2020-03-19 Osram Opto Semiconductors Gmbh Gewinngeführter halbleiterlaser und herstellungsverfahren hierfür
CN111755949B (zh) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 一种具有非对称注入窗口的脊型GaAs基激光器的制备方法
CN112200289B (zh) * 2020-11-17 2024-10-18 中国科学院上海微系统与信息技术研究所 一种基于非厄米耦合原理的光电子条码系统

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FR2459986A1 (fr) * 1979-06-22 1981-01-16 Commissariat Energie Atomique Lentille de fresnel integree
US4581742A (en) * 1984-04-10 1986-04-08 Rca Corporation Semiconductor laser having a non-absorbing passive region with beam guiding
JPS6041280A (ja) * 1984-07-20 1985-03-04 Hitachi Ltd 半導体レ−ザ
GB8516853D0 (en) * 1985-07-03 1985-08-07 British Telecomm Manufacture of semiconductor structures
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US4744089A (en) * 1986-05-19 1988-05-10 The Perkin-Elmer Corporation Monolithic semiconductor laser and optical amplifier
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US4815084A (en) * 1987-05-20 1989-03-21 Spectra Diode Laboratories, Inc. Semiconductor laser with integrated optical elements
JPH01220492A (ja) * 1988-02-26 1989-09-04 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
US5029175A (en) * 1988-12-08 1991-07-02 Matsushita Electric Industrial Co., Ltd. Semiconductor laser
US5144634A (en) * 1989-09-07 1992-09-01 International Business Machines Corporation Method for mirror passivation of semiconductor laser diodes
EP0450255B1 (en) * 1990-04-06 1994-07-06 International Business Machines Corporation Process for forming the ridge structure of a self-aligned semiconductor laser
US5088099A (en) * 1990-12-20 1992-02-11 At&T Bell Laboratories Apparatus comprising a laser adapted for emission of single mode radiation having low transverse divergence
US5305340A (en) * 1992-12-16 1994-04-19 International Business Machines Corporation Waveguide ridge laser device with improved mounting and ridge protection
US5392308A (en) * 1993-01-07 1995-02-21 Sdl, Inc. Semiconductor laser with integral spatial mode filter
US5301202A (en) * 1993-02-25 1994-04-05 International Business Machines, Corporation Semiconductor ridge waveguide laser with asymmetrical cladding
US5523256A (en) * 1993-07-21 1996-06-04 Matsushita Electric Industrial Co., Ltd. Method for producing a semiconductor laser
JP2581429B2 (ja) * 1993-12-20 1997-02-12 日本電気株式会社 半導体レーザ
JP2980302B2 (ja) * 1994-03-02 1999-11-22 日本電気株式会社 半導体レーザ
US5454004A (en) * 1994-05-06 1995-09-26 Regents Of The University Of Minnesota Phase grating and mode-selecting mirror for a laser
US5629954A (en) * 1994-10-25 1997-05-13 Trw Inc. Semiconductor laser diode with integrated etalon
US5513196A (en) * 1995-02-14 1996-04-30 Deacon Research Optical source with mode reshaping
US5859866A (en) * 1997-02-07 1999-01-12 The Trustees Of Princeton University Photonic integration using a twin waveguide structure
US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer

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