JP2002500447A - キンク抑制層を備えた半導体レーザー - Google Patents

キンク抑制層を備えた半導体レーザー

Info

Publication number
JP2002500447A
JP2002500447A JP2000527008A JP2000527008A JP2002500447A JP 2002500447 A JP2002500447 A JP 2002500447A JP 2000527008 A JP2000527008 A JP 2000527008A JP 2000527008 A JP2000527008 A JP 2000527008A JP 2002500447 A JP2002500447 A JP 2002500447A
Authority
JP
Japan
Prior art keywords
layer
kink
semiconductor laser
laser device
ridge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2000527008A
Other languages
English (en)
Japanese (ja)
Inventor
ボーラー，デニス，ピー．
Original Assignee
コーニング レーザートロン，インコーポレイテッド
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コーニング レーザートロン，インコーポレイテッド filed Critical コーニング レーザートロン，インコーポレイテッド
Publication of JP2002500447A publication Critical patent/JP2002500447A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2000527008A 1997-12-31 1998-12-18 キンク抑制層を備えた半導体レーザー Withdrawn JP2002500447A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/002,151 US6141365A (en) 1997-12-31 1997-12-31 Semiconductor laser with kink suppression layer
US09/002,151 1997-12-31
PCT/US1998/027112 WO1999034488A1 (en) 1997-12-31 1998-12-18 Semiconductor laser with kink suppression layer

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2009238098A Division JP2010016406A (ja) 1997-12-31 2009-10-15 キンク抑制層を備えた半導体レーザー

Publications (1)

Publication Number Publication Date
JP2002500447A true JP2002500447A (ja) 2002-01-08

Family

ID=21699452

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2000527008A Withdrawn JP2002500447A (ja) 1997-12-31 1998-12-18 キンク抑制層を備えた半導体レーザー
JP2009238098A Pending JP2010016406A (ja) 1997-12-31 2009-10-15 キンク抑制層を備えた半導体レーザー

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2009238098A Pending JP2010016406A (ja) 1997-12-31 2009-10-15 キンク抑制層を備えた半導体レーザー

Country Status (10)

Country Link
US (2) US6141365A (enExample)
EP (1) EP1042848B1 (enExample)
JP (2) JP2002500447A (enExample)
KR (1) KR20010033814A (enExample)
CN (1) CN1285969A (enExample)
AT (1) ATE233966T1 (enExample)
AU (1) AU742001B2 (enExample)
CA (1) CA2316830A1 (enExample)
DE (1) DE69811952T2 (enExample)
WO (1) WO1999034488A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220029388A1 (en) * 2018-09-19 2022-01-27 Osram Oled Gmbh Gain-guided semiconductor laser and method of manufacturing the same

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US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
US6358862B1 (en) 1999-09-02 2002-03-19 Micron Technology, Inc Passivation integrity improvements
US6499888B1 (en) 1999-12-20 2002-12-31 Corning Lasertron, Inc. Wide ridge pump laser
AU4718101A (en) * 1999-12-20 2001-07-03 Corning Lasertron, Inc. Wide ridge pump laser
US6375364B1 (en) * 2000-01-06 2002-04-23 Corning Lasertron, Inc. Back facet flared ridge for pump laser
JP2002299763A (ja) * 2001-04-03 2002-10-11 Sony Corp 半導体レーザ素子及びその作製方法
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
JP2003347674A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
KR100493638B1 (ko) * 2002-09-06 2005-06-03 엘지전자 주식회사 질화물 반도체 레이저 다이오드
US6862300B1 (en) * 2002-09-17 2005-03-01 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
US6940877B2 (en) * 2003-05-30 2005-09-06 Np Photonics, Inc. High-power narrow-linewidth single-frequency laser
KR100495220B1 (ko) * 2003-06-25 2005-06-14 삼성전기주식회사 고차모드 흡수층을 갖는 반도체 레이저 다이오드
DE10353960B4 (de) * 2003-10-16 2006-03-23 Vertilas Gmbh Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter
JP2005217255A (ja) * 2004-01-30 2005-08-11 Sharp Corp 半導体レーザおよびその製造方法
DE102004036963A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
US7856037B2 (en) * 2007-03-16 2010-12-21 Oclaro (North America), Inc. System of method for dynamic range extension
JP4754020B2 (ja) * 2007-07-27 2011-08-24 三菱電機株式会社 平面導波路型レーザ装置
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
JP2011243939A (ja) * 2010-01-20 2011-12-01 Panasonic Corp 窒化物半導体レーザ装置
DE102011075502A1 (de) 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
GB201220460D0 (en) * 2012-11-14 2012-12-26 Univ Dundee Ultrafast semiconductor lasers as optical pump sources in terahertz systems
US11728620B2 (en) * 2017-12-27 2023-08-15 Princeton Optronics, Inc. Semiconductor devices and methods for producing the same
CN111755949B (zh) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 一种具有非对称注入窗口的脊型GaAs基激光器的制备方法
CN112200289B (zh) * 2020-11-17 2024-10-18 中国科学院上海微系统与信息技术研究所 一种基于非厄米耦合原理的光电子条码系统

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220029388A1 (en) * 2018-09-19 2022-01-27 Osram Oled Gmbh Gain-guided semiconductor laser and method of manufacturing the same
US11984704B2 (en) * 2018-09-19 2024-05-14 Osram Oled Gmbh Gain-guided semiconductor laser and method of manufacturing the same

Also Published As

Publication number Publication date
CA2316830A1 (en) 1999-07-08
DE69811952D1 (de) 2003-04-10
DE69811952T2 (de) 2003-08-28
AU742001B2 (en) 2001-12-13
EP1042848A1 (en) 2000-10-11
JP2010016406A (ja) 2010-01-21
CN1285969A (zh) 2001-02-28
WO1999034488A1 (en) 1999-07-08
EP1042848B1 (en) 2003-03-05
US6366595B1 (en) 2002-04-02
ATE233966T1 (de) 2003-03-15
US6141365A (en) 2000-10-31
KR20010033814A (ko) 2001-04-25
AU1933399A (en) 1999-07-19

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