ATE233966T1 - Halbleiterlaser mit kinkunterdrückungsschicht - Google Patents

Halbleiterlaser mit kinkunterdrückungsschicht

Info

Publication number
ATE233966T1
ATE233966T1 AT98964146T AT98964146T ATE233966T1 AT E233966 T1 ATE233966 T1 AT E233966T1 AT 98964146 T AT98964146 T AT 98964146T AT 98964146 T AT98964146 T AT 98964146T AT E233966 T1 ATE233966 T1 AT E233966T1
Authority
AT
Austria
Prior art keywords
kink
semiconductor laser
suppression layer
kink suppression
optical
Prior art date
Application number
AT98964146T
Other languages
English (en)
Inventor
Dennis P Bowler
Original Assignee
Corning Lasertron Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Corning Lasertron Inc filed Critical Corning Lasertron Inc
Application granted granted Critical
Publication of ATE233966T1 publication Critical patent/ATE233966T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/065—Mode locking; Mode suppression; Mode selection ; Self pulsating
    • H01S5/0651—Mode control
    • H01S5/0653—Mode suppression, e.g. specific multimode
    • H01S5/0655—Single transverse or lateral mode emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2022—Absorbing region or layer parallel to the active layer, e.g. to influence transverse modes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/204—Strongly index guided structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
AT98964146T 1997-12-31 1998-12-18 Halbleiterlaser mit kinkunterdrückungsschicht ATE233966T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/002,151 US6141365A (en) 1997-12-31 1997-12-31 Semiconductor laser with kink suppression layer
PCT/US1998/027112 WO1999034488A1 (en) 1997-12-31 1998-12-18 Semiconductor laser with kink suppression layer

Publications (1)

Publication Number Publication Date
ATE233966T1 true ATE233966T1 (de) 2003-03-15

Family

ID=21699452

Family Applications (1)

Application Number Title Priority Date Filing Date
AT98964146T ATE233966T1 (de) 1997-12-31 1998-12-18 Halbleiterlaser mit kinkunterdrückungsschicht

Country Status (10)

Country Link
US (2) US6141365A (de)
EP (1) EP1042848B1 (de)
JP (2) JP2002500447A (de)
KR (1) KR20010033814A (de)
CN (1) CN1285969A (de)
AT (1) ATE233966T1 (de)
AU (1) AU742001B2 (de)
CA (1) CA2316830A1 (de)
DE (1) DE69811952T2 (de)
WO (1) WO1999034488A1 (de)

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US6141365A (en) * 1997-12-31 2000-10-31 Lasertron Semiconductor laser with kink suppression layer
US6358862B1 (en) * 1999-09-02 2002-03-19 Micron Technology, Inc Passivation integrity improvements
US6499888B1 (en) 1999-12-20 2002-12-31 Corning Lasertron, Inc. Wide ridge pump laser
CA2395009A1 (en) * 1999-12-20 2001-06-28 Corning Lasertron, Inc. Wide ridge pump laser
US6375364B1 (en) 2000-01-06 2002-04-23 Corning Lasertron, Inc. Back facet flared ridge for pump laser
JP2002299763A (ja) * 2001-04-03 2002-10-11 Sony Corp 半導体レーザ素子及びその作製方法
US6829269B2 (en) 2002-05-21 2004-12-07 University Of Massachusetts Systems and methods using phonon mediated intersubband laser
JP2003347674A (ja) * 2002-05-30 2003-12-05 Mitsubishi Electric Corp 半導体レーザ装置及びその製造方法
KR100493638B1 (ko) * 2002-09-06 2005-06-03 엘지전자 주식회사 질화물 반도체 레이저 다이오드
US6862300B1 (en) * 2002-09-17 2005-03-01 Bookham Technology Plc High power semiconductor laser diode and method for making such a diode
US6940877B2 (en) * 2003-05-30 2005-09-06 Np Photonics, Inc. High-power narrow-linewidth single-frequency laser
KR100495220B1 (ko) * 2003-06-25 2005-06-14 삼성전기주식회사 고차모드 흡수층을 갖는 반도체 레이저 다이오드
DE10353960B4 (de) * 2003-10-16 2006-03-23 Vertilas Gmbh Oberflächenemittierender Halbleiterlaser mit strukturiertem Wellenleiter
JP2005217255A (ja) * 2004-01-30 2005-08-11 Sharp Corp 半導体レーザおよびその製造方法
DE102004036963A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optisch gepumpte oberflächenemittierende Halbleiterlaser-Vorrichtung
DE102006046297A1 (de) * 2006-09-29 2008-04-03 Osram Opto Semiconductors Gmbh Halbleiterlaser
US7856037B2 (en) * 2007-03-16 2010-12-21 Oclaro (North America), Inc. System of method for dynamic range extension
WO2009016703A1 (ja) * 2007-07-27 2009-02-05 Mitsubishi Electric Corporation 平面導波路型レーザ装置
DE102009015314B4 (de) * 2009-03-27 2023-04-27 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterlaservorrichtung
JP2011243939A (ja) * 2010-01-20 2011-12-01 Panasonic Corp 窒化物半導体レーザ装置
DE102011075502A1 (de) 2011-05-09 2012-11-15 Forschungsverbund Berlin E.V. Breitstreifen-Diodenlaser mit hoher Effizienz und geringer Fernfelddivergenz
GB201220460D0 (en) * 2012-11-14 2012-12-26 Univ Dundee Ultrafast semiconductor lasers as optical pump sources in terahertz systems
EP3732707A4 (de) * 2017-12-27 2021-09-01 Princeton Optronics, Inc. Halbleiterbauelement und verfahren zur herstellung davon
CN111755949B (zh) * 2019-03-29 2021-12-07 潍坊华光光电子有限公司 一种具有非对称注入窗口的脊型GaAs基激光器的制备方法

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Also Published As

Publication number Publication date
DE69811952D1 (de) 2003-04-10
KR20010033814A (ko) 2001-04-25
DE69811952T2 (de) 2003-08-28
WO1999034488A1 (en) 1999-07-08
US6141365A (en) 2000-10-31
CN1285969A (zh) 2001-02-28
EP1042848B1 (de) 2003-03-05
AU1933399A (en) 1999-07-19
EP1042848A1 (de) 2000-10-11
AU742001B2 (en) 2001-12-13
JP2002500447A (ja) 2002-01-08
CA2316830A1 (en) 1999-07-08
US6366595B1 (en) 2002-04-02
JP2010016406A (ja) 2010-01-21

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Legal Events

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