ATE128579T1 - Laserstruktur mit verteilter rückkopplung und herstellungsverfahren. - Google Patents

Laserstruktur mit verteilter rückkopplung und herstellungsverfahren.

Info

Publication number
ATE128579T1
ATE128579T1 AT91200135T AT91200135T ATE128579T1 AT E128579 T1 ATE128579 T1 AT E128579T1 AT 91200135 T AT91200135 T AT 91200135T AT 91200135 T AT91200135 T AT 91200135T AT E128579 T1 ATE128579 T1 AT E128579T1
Authority
AT
Austria
Prior art keywords
distributed feedback
laser structure
manufacturing
active layer
feedback laser
Prior art date
Application number
AT91200135T
Other languages
English (en)
Inventor
Roeland Gustaaf Frans Baets
Geert Jozef Ivo Morthier
Original Assignee
Imec Inter Uni Micro Electr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imec Inter Uni Micro Electr filed Critical Imec Inter Uni Micro Electr
Application granted granted Critical
Publication of ATE128579T1 publication Critical patent/ATE128579T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1225—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers with a varying coupling constant along the optical axis

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
AT91200135T 1990-01-23 1991-01-23 Laserstruktur mit verteilter rückkopplung und herstellungsverfahren. ATE128579T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL9000164A NL9000164A (nl) 1990-01-23 1990-01-23 Laseropbouw met gedistribueerde terugkoppeling en werkwijze ter vervaardiging daarvan.

Publications (1)

Publication Number Publication Date
ATE128579T1 true ATE128579T1 (de) 1995-10-15

Family

ID=19856467

Family Applications (1)

Application Number Title Priority Date Filing Date
AT91200135T ATE128579T1 (de) 1990-01-23 1991-01-23 Laserstruktur mit verteilter rückkopplung und herstellungsverfahren.

Country Status (4)

Country Link
EP (1) EP0439236B1 (de)
AT (1) ATE128579T1 (de)
DE (1) DE69113288T2 (de)
NL (1) NL9000164A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4322163A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Auf DFB- oder DBR-Gitter basierendes optoelektronisches Bauelement mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, mit axial beliebig verteilbarer und variierbarer Phasenverschiebung, sowie mit axial quasi-kontinuierlich variierbarem Gitter-Kopplungskoeffizienten
DE4322164A1 (de) * 1993-07-03 1995-01-12 Ant Nachrichtentech Optoelektronisches Bauelement mit Rückkopplungsgitter, mit axial quasi-kontinuierlich und nahezu beliebig variierbarem Gitterkopplungs-Koeffizienten, mit quasi-kontinuierlich axial verteilbarer Brechungsindex-Variation, sowie mit axial nahezu beliebig verteilbarer und variierbarer Phasenverschiebung
DE4334525A1 (de) * 1993-10-09 1995-04-13 Deutsche Bundespost Telekom Optoelektronisches Bauelement mit verteilter Rückkopplung und variierbarem Kopplungskoeffizienten
JPH08255954A (ja) * 1995-03-17 1996-10-01 Mitsubishi Electric Corp 半導体レーザの構造及びその製造方法
JP6483521B2 (ja) * 2015-05-21 2019-03-13 日本電信電話株式会社 半導体レーザ
JP6588859B2 (ja) * 2016-05-13 2019-10-09 日本電信電話株式会社 半導体レーザ
JP6588858B2 (ja) * 2016-05-13 2019-10-09 日本電信電話株式会社 半導体レーザ
JP2018006440A (ja) * 2016-06-29 2018-01-11 日本電信電話株式会社 半導体レーザ

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4775980A (en) * 1983-12-14 1988-10-04 Hitachi, Ltd. Distributed-feedback semiconductor laser device
JPH0666509B2 (ja) * 1983-12-14 1994-08-24 株式会社日立製作所 分布帰還型半導体レ−ザ装置
JP2768940B2 (ja) * 1987-07-08 1998-06-25 三菱電機株式会社 単一波長発振半導体レーザ装置
GB2209408B (en) * 1987-09-04 1991-08-21 Plessey Co Plc Optical waveguide device having surface relief diffraction grating

Also Published As

Publication number Publication date
DE69113288D1 (de) 1995-11-02
EP0439236A1 (de) 1991-07-31
NL9000164A (nl) 1991-08-16
DE69113288T2 (de) 1996-03-14
EP0439236B1 (de) 1995-09-27

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