JP2003198057A5 - - Google Patents
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- Publication number
- JP2003198057A5 JP2003198057A5 JP2001396900A JP2001396900A JP2003198057A5 JP 2003198057 A5 JP2003198057 A5 JP 2003198057A5 JP 2001396900 A JP2001396900 A JP 2001396900A JP 2001396900 A JP2001396900 A JP 2001396900A JP 2003198057 A5 JP2003198057 A5 JP 2003198057A5
- Authority
- JP
- Japan
- Prior art keywords
- waveguide
- face
- ridge
- substrate
- laser device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 28
- 239000000758 substrate Substances 0.000 claims 24
- 238000004519 manufacturing process Methods 0.000 claims 6
- 229910052594 sapphire Inorganic materials 0.000 claims 6
- 239000010980 sapphire Substances 0.000 claims 6
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims 3
- 150000001875 compounds Chemical class 0.000 claims 3
- 238000005253 cladding Methods 0.000 claims 2
- 229910021478 group 5 element Inorganic materials 0.000 claims 2
- 238000005229 chemical vapour deposition Methods 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001396900A JP2003198057A (ja) | 2001-12-27 | 2001-12-27 | 半導体レーザ素子及びその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001396900A JP2003198057A (ja) | 2001-12-27 | 2001-12-27 | 半導体レーザ素子及びその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003198057A JP2003198057A (ja) | 2003-07-11 |
| JP2003198057A5 true JP2003198057A5 (enExample) | 2005-08-04 |
Family
ID=27602846
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001396900A Pending JP2003198057A (ja) | 2001-12-27 | 2001-12-27 | 半導体レーザ素子及びその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2003198057A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4305554B2 (ja) | 2007-02-28 | 2009-07-29 | ソニー株式会社 | 半導体レーザの製造方法 |
| US8530255B2 (en) | 2007-02-28 | 2013-09-10 | Sony Corporation | Method of manufacturing semiconductor laser, semiconductor laser, optical pickup, optical disk device, method of manufacturing semiconductor device, semiconductor device, and method of growing nitride type group III-V compound semiconductor layer |
| JP2009105184A (ja) | 2007-10-23 | 2009-05-14 | Sharp Corp | 窒化物系半導体レーザ素子とその製造方法 |
| US20100074290A1 (en) * | 2007-11-02 | 2010-03-25 | Masao Kawaguchi | Semiconductor laser device |
| JP2009283512A (ja) * | 2008-05-19 | 2009-12-03 | Panasonic Corp | 窒化物半導体レーザ |
| JP2009302138A (ja) * | 2008-06-10 | 2009-12-24 | Opnext Japan Inc | 半導体レーザ素子、及び半導体レーザ素子の製造方法 |
| JP5281842B2 (ja) * | 2008-07-29 | 2013-09-04 | パナソニック株式会社 | 半導体レーザ装置 |
| JP5153524B2 (ja) * | 2008-09-01 | 2013-02-27 | シャープ株式会社 | 窒化物半導体発光素子およびその製造方法 |
| JP5093033B2 (ja) * | 2008-09-30 | 2012-12-05 | ソニー株式会社 | 半導体レーザの製造方法、半導体レーザ、光ピックアップおよび光ディスク装置 |
| JP5906445B2 (ja) | 2008-12-10 | 2016-04-20 | パナソニックＩｐマネジメント株式会社 | 半導体レーザ装置及びその製造方法 |
| JP2011124253A (ja) | 2009-12-08 | 2011-06-23 | Sony Corp | 半導体レーザの製造方法、半導体レーザ、光ディスク装置、半導体装置の製造方法および半導体装置 |
| WO2022030127A1 (ja) * | 2020-08-04 | 2022-02-10 | パナソニック株式会社 | 半導体発光装置 |
-
2001
- 2001-12-27 JP JP2001396900A patent/JP2003198057A/ja active Pending
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